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    Text: KSMD3N60C 600V N-Channel MOSFET TO-252 Features • 2.4A, 600V, RDS on = 3.4Ω @VGS = 10 V • Low gate charge ( typical 10.5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect


    Original     		PDF KSMD3N60C O-252