KTC9015S
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC9015S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 BEB 2 1 Item Marking Description Device Mark BE KTC9015S hFE Grade B B, C * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KTC9015S
OT-23
KTC9015S
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC9015S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ・Excellent hFE Linearity D : hFE IC=-0.1mA /hFE(IC=-2mA)=0.95(Typ.). 2 A 3 G ・Low Noise :NF=1dB(Typ.) at f=1kHz.
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KTC9015S
KTC9014S.
10x8x0
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KTC9014
Abstract: KTC9015
Text: SEMICONDUCTOR KTC9014 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌExcellent hFE Linearity : hFE IC=0.1mA /hFE(IC=2mA)=0.95(Typ.). ᴌLow Noise :NF=1dB(Typ.) at f=1kHz. N E K ᴌComplementary to KTC9015.
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KTC9014
KTC9015.
100mA,
100MHz
KTC9014
KTC9015
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KTC9014
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC9015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE IC=-0.1mA /hFE(IC=-2mA)=0.95(Typ.). Low Noise :NF=1dB(Typ.) at f=1kHz. N E K Complementary to KTC9014.
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KTC9015
KTC9014.
-100mA,
-10mA
100MHz
KTC9014
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c9015
Abstract: transistor C9015 c9015 transistor c9015 equivalent c9015 transistor data transistor C9015 APPLICATION c9015 transistor datasheet KTC9015 1900 c9015 datasheet
Text: SEMICONDUCTOR KTC9015 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking 1 Device Name C9015 2 Lot No. 816 3 98.06.23 hFE Grade Revision No : B 00 Description KTC9015 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week
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KTC9015
C9015
c9015
transistor C9015
c9015 transistor
c9015 equivalent
c9015 transistor data
transistor C9015 APPLICATION
c9015 transistor datasheet
KTC9015
1900
c9015 datasheet
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KTC9015A
Abstract: KTC9014A C200-600
Text: SEMICONDUCTOR KTC9015A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity : hFE IC=-0.1mA /hFE(IC=-2mA)=0.95(Typ.). ・Low Noise :NF=1dB(Typ.) at f=1kHz. N K ・Complementary to KTC9014A.
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KTC9015A
KTC9014A.
-100mA,
-10mA
100MHz
KTC9015A
KTC9014A
C200-600
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC9015A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2010. 1. 28 Revision No : 2 1/1
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KTC9015A
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC9014 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity : hFE IC=0.1mA /hFE(IC=2mA)=0.95(Typ.). ・Low Noise :NF=1dB(Typ.) at f=1kHz. N E K ・Complementary to KTC9015.
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KTC9014
KTC9015.
100mA,
100MHz
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KTC9014S
Abstract: KTC9015S
Text: SEMICONDUCTOR KTC9014S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity 2 H Complementary to KTC9015S. 3 G A Low Noise :NF=1dB Typ. at f=1kHz. 1 J SYMBOL RATING UNIT
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KTC9014S
KTC9015S.
10x8x0
KTC9014S
KTC9015S
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KTC9014S
Abstract: KTC9015S
Text: SEMICONDUCTOR KTC9015S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity 2 H Complementary to KTC9014S. 3 G A Low Noise :NF=1dB Typ. at f=1kHz. 1 SYMBOL RATING UNIT
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KTC9015S
KTC9014S.
-100mA,
-10mA
100MHz
KTC9014S
KTC9015S
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KTC9014A
Abstract: KTC9015A C200-600 *c9014* transistor
Text: SEMICONDUCTOR KTC9014A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity : hFE IC=0.1mA /hFE(IC=2mA)=0.95(Typ.). ・Low Noise :NF=1dB(Typ.) at f=1kHz. N K ・Complementary to KTC9015A.
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KTC9014A
KTC9015A.
100mA,
100MHz
KTC9014A
KTC9015A
C200-600
*c9014* transistor
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KTC9015 transistor
Abstract: KTC9014 KTC9015 TO 92 leadframe
Text: SEMICONDUCTOR KTC9014 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES C A ・Excellent hFE Linearity : hFE IC=0.1mA /hFE(IC=2mA)=0.95(Typ.). ・Low Noise :NF=1dB(Typ.) at f=1kHz. N ・Complementary to KTC9015.
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KTC9014
KTC9015.
100mA,
100MHz
KTC9015 transistor
KTC9014
KTC9015
TO 92 leadframe
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC9015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity : hFE IC=-0.1mA /hFE(IC=-2mA)=0.95(Typ.). ・Low Noise :NF=1dB(Typ.) at f=1kHz. N ・Complementary to KTC9014.
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KTC9015
KTC9014.
-100mA,
-10mA
100MHz
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ktc9014
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC9014 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity : hFE IC=0.1mA /hFE(IC=2mA)=0.95(Typ.). ・Low Noise :NF=1dB(Typ.) at f=1kHz. N E K ・Complementary to KTC9015.
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KTC9014
KTC9015.
100mA,
100MHz
ktc9014
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KTC9015 transistor
Abstract: KTC9014 KTC9015
Text: SEMICONDUCTOR KTC9015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌExcellent hFE Linearity : hFE IC=-0.1mA /hFE(IC=-2mA)=0.95(Typ.). ᴌLow Noise :NF=1dB(Typ.) at f=1kHz. N E K ᴌComplementary to KTC9014.
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KTC9015
KTC9014.
-100mA,
-10mA
100MHz
KTC9015 transistor
KTC9014
KTC9015
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC9015S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2003. 3. 25 Revision No : 1 1/2
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KTC9015S
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC9015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2011. 4. 4 Revision No : 2 1/1
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KTC9015
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KTC9014S
Abstract: KTC9015S
Text: SEMICONDUCTOR KTC9014S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity 2 H Complementary to KTC9015S. 3 G A Low Noise :NF=1dB Typ. at f=1kHz. 1 SYMBOL RATING UNIT
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KTC9014S
KTC9015S.
100mA,
100MHz
KTC9014S
KTC9015S
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTC9014 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent I if e Linearity • hFE Ic=0.1m A /hFE(Ic=2m A )=0.95(T yp.). • Low Noise :NF=ldB(Typ.) at f=lkHz. • Complementary to KTC9015.
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KTC9014
KTC9015.
100mA,
100MHz
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LM 9014 c
Abstract: lm 9014 ST 9014 C a/LM 9014 c
Text: S EM IC O N D U C T O R KTC9015 TECHNI CAL DATA EPITA X IA L PL A N A R PNP T R A N SIST O R G E N E R A L PUR PO SE A PPLICATION. SW ITC H IN G APPLICATIO N. FEA T U RE S • Excellent h FE Linearity : hFE Ic=-0. lm A /hFE(Ic=-2mA)=0.95(Typ.). • Low Noise :N F=ldB(Typ.) at f=lkHz.
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KTC9015
-100mA,
-10mA
100MHz
LM 9014 c
lm 9014
ST 9014 C
a/LM 9014 c
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C200-600
Abstract: transistor C200 KTC9014 KTC9015 KTC9015 transistor C-200
Text: SEMICONDUCTOR TECHNICAL DATA KTC9015 e p it a x ia l p la n a r pnp t r a n s i s t o r GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent I if e Linearity • hFE Ic=0.1m A /hFE(Ic=2m A )=0.95(T yp.). • Low Noise :NF=ldB(Typ.) at f=lkHz.
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KTC9015
KTC9014.
-100mA,
-10mA
100MHz
C200-600
C200-600
transistor C200
KTC9014
KTC9015
KTC9015 transistor
C-200
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9014A
Abstract: No abstract text available
Text: S EM IC O N D U C T O R KTC9015A TECHNI CAL DATA EPITA X IA L PL A N A R PNP T R A N SIST O R G E N E R A L PUR PO SE A PPLICATION. SW ITC H IN G APPLICATIO N. FEA T U RE S • Excellent h FE Linearity : hFE Ic=-0. lm A /hFE(Ic=-2mA)=0.95(Typ.). y • Low Noise :N F=ldB(Typ.) at f=lkHz.
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KTC9015A
-100mA,
-10mA
100MHz
9014A
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transistor C200
Abstract: C200-600 KTC9014 KTC9015
Text: K E C SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. KTC9015 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Ii f e Linearity : h FE Ic= 0.1m A /hFE (Ic=2m A )=0.95(T yp.). • Low Noise :NF=ldB(Typ.) at f=lkHz.
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KTC9015
KTC9014.
-100mA,
-10mA
100MHz
C200-600
transistor C200
C200-600
KTC9014
KTC9015
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2SC3875S
Abstract: BC547 BC546 2Sc4370a 2SC3227 2sa1274 2SA1267 2SC3201 BC557 bc556 2sa1659a bc557
Text: This Transistors Electrical Characteristics T a=25°C Applications VCEO fT (TYP) MIN (TYP) MAX VCE f ratnage Its Respective (mA) (mW) (V) (mA) (MHz) (V) (dB) (V) (KHz) 50 150 150 70^700 6 2 0.25 100 10 80 10 1 10 6 0.1 1 10 SOT-23 H 2SA1269 120 100 200
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Ta-25
2SC3875S
2SA1S04S
OT-23
2SC3201
2SA1269
O-92M
2SC3199
2SA1267
BC547 BC546
2Sc4370a
2SC3227
2sa1274
BC557 bc556
2sa1659a
bc557
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