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KEC KTN2907AS-RTK/P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ameya Holding Limited	KTN2907AS-RTK/P		36,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	KTN2907AS-RTK/P		75,000			1 - 10 - 100 - 1000 $0.059 10000 $0.039	Buy Now

KTN2907 Datasheets (27)

Part	Manufacturer	Description	Datasheet Type	PDF
KTN2907	Korea Electronics	Switching Transistor	Original	PDF
KTN2907	Korea Electronics	V(ceo): 30V I(c): 600mA P(c): 625mW NPN Silicon Transistor	Scan	PDF
KTN2907	Korea Electronics	EPITAXIAL PLANAR PNP TRANSISTOR	Scan	PDF
KTN2907	Korea Electronics	Switching Transistor	Scan	PDF
KTN2907	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
KTN2907	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
KTN2907A	Korea Electronics	Switching Transistor	Original	PDF
KTN2907A	Korea Electronics	EPITAXIAL PLANAR PNP TRANSISTOR	Scan	PDF
KTN2907A	Korea Electronics	V(ceo): 40V I(c): 600mA P(c): 625mW NPN Silicon Transistor	Scan	PDF
KTN2907A	Korea Electronics	Switching Transistor	Scan	PDF
KTN2907(A)	Unknown	Silicon PNP Transistor	Scan	PDF
KTN2907A	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
KTN2907A	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
KTN2907AS	Korea Electronics	Switching Transistor	Original	PDF

KTN2907AS	Korea Electronics	Switching Transistor	Scan	PDF
KTN2907AS	Korea Electronics	EPITAXIAL PLANAR PNP TRANSISTOR	Scan	PDF
KTN2907(A)S	Unknown	Silicon PNP Transistor	Scan	PDF
KTN2907AU	Korea Electronics	Switching Transistor	Original	PDF
KTN2907AU	Korea Electronics	EPITAXIAL PLANAR PNP TRANSISTOR	Scan	PDF
KTN2907AU	Korea Electronics	Switching Transistor	Scan	PDF

KTN2907 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
KTN2907S SOT-23 Abstract: KTN2907S marking zd Text: SEMICONDUCTOR KTN2907S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking ZD No. 1 Item Marking Device Mark ZD KTN2907S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method	Original	KTN2907S OT-23 KTN2907S SOT-23 KTN2907S marking zd	PDF
ZH SOT-23 Abstract: KTN2907AS SOT-23 KTN2907AS zH marking Text: SEMICONDUCTOR KTN2907AS MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 ZH 2 1 Item Marking Description Device Mark ZH KTN2907AS hFE Grade - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method	Original	KTN2907AS OT-23 ZH SOT-23 KTN2907AS SOT-23 KTN2907AS zH marking	PDF
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR KTN2907U/AU TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2008. 8. 29 Revision No : 5 1/4	Original	KTN2907U/AU	PDF
KTN2907AU Abstract: mark ZH ZH12 zH marking Text: SEMICONDUCTOR KTN2907AU MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZH 1 2 Item Marking Description Device Mark ZH KTN2907AU hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method	Original	KTN2907AU KTN2907AU mark ZH ZH12 zH marking	PDF
ZH SOT-23 Abstract: KTN2907S sot23 transistor marking ZH KTN2907AS KTN2907AS SOT-23 Text: SEMICONDUCTOR KTN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current E B L L ・Low Saturation Voltage H : VCE sat =-0.4V(Max.) ; IC=-150mA, IB=-15mA. 3 G A 2 D : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.	Original	KTN2907S/AS -150mA, -15mA. -50nA KTN2222S/2222AS. 10x8x0 ZH SOT-23 KTN2907S sot23 transistor marking ZH KTN2907AS KTN2907AS SOT-23	PDF
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR KTN2907AE TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. ・Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.	Original	KTN2907AE -50nA -150mA, -15mA. KTN2222AE. -50mA, 100MHz -150mA -15mA	PDF
2222a Abstract: KTN2907AU KTN2907U Text: SEMICONDUCTOR KTN2907U/AU TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES ・Low Leakage Current B M : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. M D 3 1 G ・Low Saturation Voltage J A 2 : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.	Original	KTN2907U/AU -150mA, -15mA. KTN2222U/2222AU. -50nA 2222a KTN2907AU KTN2907U	PDF
KTN2907AE Abstract: KTN2222AE Text: SEMICONDUCTOR KTN2907AE TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. D H Low Saturation Voltage G A 2 1 3 DIM A B : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.	Original	KTN2907AE -50nA -150mA, -15mA. KTN2222AE. KTN2907AE KTN2222AE	PDF
2907a Abstract: transistor 2222a data sheet 2n2907 TO-92 2222A 2N2907 TRANSISTOR 2222AG 2907A EQUIVALENT 2907A similar 2n2907 TRANSISTOR PNP transistor 2222a Text: SEMICONDUCTOR KTN2907/A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES ᴌLow Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. ᴌLow Saturation Voltage N E K : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.	Original	KTN2907/A -50nA -150mA, -15mA. KTN2222/2222A. KTN2907/2907A 2N2907/2907A. 2907a transistor 2222a data sheet 2n2907 TO-92 2222A 2N2907 TRANSISTOR 2222AG 2907A EQUIVALENT 2907A similar 2n2907 TRANSISTOR PNP transistor 2222a	PDF
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR KTN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2002. 4. 9 Revision No : 4 1/4	Original	KTN2907S/AS	PDF
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR KTN2907AE TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. D H Low Saturation Voltage G A 2 1 3 DIM A B : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.	Original	KTN2907AE -50nA -150mA, -15mA. KTN2222AE.	PDF
H2907A Abstract: h2907 KTN2907A SAT-2 Text: PNP SILICON 汕头华汕电子器件有限公司 TRANSISTOR 对应国外型号 KTN2907A H2907A █ 主要用途 █ 外形图及引脚排列放大开关应用。 █ 极限值（Ta=25℃） TO-92 T stg ——贮存温度………………………………… -55~150℃	Original	KTN2907A H2907A 625mW -600mA -00mA -10AIE -10mAIB -10AIC -150mA -500mA H2907A h2907 KTN2907A SAT-2	PDF
KTN2907A Abstract: 2907a 2907A similar KTN2907 KTN2222 transistor 2222a Text: SEMICONDUCTOR KTN2907/A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage N E K : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.	Original	KTN2907/A -50nA -150mA, -15mA. KTN2222/2222A. KTN2907/2907A 2N2907/2907A. KTN29ncy -50mA, 100MHz KTN2907A 2907a 2907A similar KTN2907 KTN2222 transistor 2222a	PDF
2907 Abstract: a 2907 KTN2907 Text: SEMICONDUCTOR KTN2907 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KTN 2907 816 No. Item 1 2 3 98.06.23 Marking Description KTN Series Name 2907 Device Name Device Name Lot No. Revision No : 8 Year 0 ~ 9 : 1900~1999 16 Week	Original	KTN2907 2907 a 2907 KTN2907	PDF

Untitled Abstract: No abstract text available Text: SEMICONDUCTOR KTN2907/A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES ・Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. ・Low Saturation Voltage N E K : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.	Original	KTN2907/A -50nA -150mA, -15mA. KTN2222/2222A. KTN2907/2907A 2N2907/2907A. -500mA, -50mA	PDF
KTN2907AU Abstract: KTN2907U Text: SEMICONDUCTOR KTN2907U/AU TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES ・Low Leakage Current M : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. B M D 3 1 G ・Low Saturation Voltage J A 2 : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.	Original	KTN2907U/AU -150mA, -15mA. KTN2222U/2222AU. -50nA KTN2907U KTN2907AU KTN2907AU	PDF
KTN2222U Abstract: No abstract text available Text: SEMICONDUCTOR KTN2222U/AU TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M Low Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. D 3 1 G Low Saturation Voltage J A 2 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.	Original	KTN2222U/AU 150mA, KTN2907U/2907AU. KTN2222U KTN2222AU	PDF
KTN2907AU Abstract: KTN2907U Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA E LE C T R O N IC S CO.,LTD. KTN2907U/AU EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx=-50nA Max. ; V = - 3 0 V , Veb=-0.5V. • Low Saturation Voltage	OCR Scan	KTN2907U/AU -50nA -150mA, -15mA. KTN2907U KTN2907AU KTN2907AU	PDF
2907A similar Abstract: KTN2907 Text: SEM ICONDUCTOR KTN2907/A TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=-50nA M ax. ; VCE=-30V, V EB=-0.5V. • Low Saturation Voltage DIM A B f t ID : VCE(Sat)—0.4V (M ax.); Ic=-150mA, IB=-15mA.	OCR Scan	-50nA -150mA, -15mA. KTN2222/2222A. KTN2907/2907A 2N2907/2907A. KTN2907/A KTN29 2907A similar KTN2907	PDF
KTN2369AU Abstract: KTN2369U KTN2907AU KTN2907U Text: SEMICONDUCTOR TECHNICAL DATA KTN2907U/AU EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=-50nA Max. ; VCe=-30V, Veb=-0.5V. • Low Saturation Voltage : V CEfeat)=-0.4V(Max.) ; Ic=-150mA, IB=-15mA.	OCR Scan	KTN2907U/AU -50nA -150mA, -15mA. KTN2222U/2222AU. KTN2907U KTN2907AU KTN2369AU KTN2369U KTN2907AU	PDF
KTN2907AS Abstract: KTN2907S KTN2907AS SOT-23 KTN2907S SOT-23 Text: KEC SEMICONDUCTOR KTN2907S/AS KOREA E LE C T R O N IC S CO.,LTD. T E C H N IC A L D A T A EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx=-50nA M ax. ; V Ce =-30V, V eb=-0.5V. DIM	OCR Scan	KTN2907S/AS -50nA -150mA, -15mA. KTN2222S/2222AS. KTN2907S KTN2907AS 10x8x0 KTN2907AS KTN2907AS SOT-23 KTN2907S SOT-23	PDF
2n2907 or similar PNP Abstract: transistor 2222a to-92 KTN2907 KTN2907A KTN2907 or similar PNP Text: SEMICONDUCTOR TECHNICAL DATA KTN2907/A EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=-50nA Max. ; VCe=-30V, V eb=-0.5V. • Low Saturation Voltage : V CEfeat)=-0.4V(Max.) ; Ic=-150mA, IB=-15mA.	OCR Scan	KTN2907/A -50nA -150mA, -15mA. KTN2222/2222A. KTN2907/2907A 2N2907/2907A. KTN2907 KTN2907A MILL00 2n2907 or similar PNP transistor 2222a to-92 KTN2907A KTN2907 or similar PNP	PDF
ktn2907as Abstract: KTN2907S Text: SEMICONDUCTOR TECHNICAL DATA KTN2907S/AS EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES A MILLIMETERS 2.93+0.20 B 1.30+0.20/—0.15 C D 1.30 MAX 0.45+0.15/—0.05 E 2.40+0.3 0 /- 0 .20 DIM • Low Leakage Current	OCR Scan	KTN2907S/AS -50nA -150mA, -15mA. KTN2222S/2222AS. KTN2907S KTN2907AS 20TAGE 10x8x0 ktn2907as	PDF
2907a Abstract: KTN2907A KTN2907 transistor 2222a to-92 Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTN2907/A EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx=-50nA Max. ; V ce=-30V, Veb=-0.5V. • Low Saturation Voltage	OCR Scan	KTN2907/A -50nA -150mA, -15mA. KTN2222/2222A. KTN2907/2907A 2N2907/2907A. KTN2907 KTN2907A 2907a KTN2907A transistor 2222a to-92	PDF

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KTN2907 Price and Stock

KEC KTN2907AS-RTK/P

KTN2907 Datasheets (27)

KTN2907 Datasheets Context Search

KTN2907S SOT-23

ZH SOT-23

Untitled

KTN2907AU

ZH SOT-23

Untitled

2222a

KTN2907AE

2907a

Untitled

Untitled

H2907A

KTN2907A

2907

Untitled

KTN2907AU

KTN2222U

KTN2907AU

2907A similar

KTN2369AU

KTN2907AS

2n2907 or similar PNP

ktn2907as

2907a