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    KU 4W TRANSMITTER Search Results

    KU 4W TRANSMITTER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DA4100 Renesas Electronics Corporation WattUp® Wireless Power Transmitter Visit Renesas Electronics Corporation
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd

    KU 4W TRANSMITTER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    buc ku

    Abstract: NJT5025F NJT5025FH NJT5025H hpa L-band WR-75 ku 4w transmitter NJT5025 New Japan Radio Co
    Text: Ku-band 4W BUC [ Block Upconverter ] MODEL NO. NJT5025H / 25FH <Description> This unit is the fixed gain transmitter incorporating a low phase noise Phase Locked Local Oscillator and a high reliable MMIC High Power Amplifier, and converts L Band 950 to 1,450 MHz


    Original     		NJT5025H NJT5025H NJT5025FH NJT5025H/25FH buc ku NJT5025F NJT5025FH hpa L-band WR-75 ku 4w transmitter NJT5025 New Japan Radio Co PDF

    NJT5025F

    Abstract: NJT5025 buc ku WR-75 njt-5025
    Text: Ku-band 4W BUC [ Block Upconverter ] MODEL NO. NJT5025 / 25F <Description> This unit is the fixed gain transmitter incorporating a low phase noise Phase Locked Local Oscillator and a high reliable MMIC High Power Amplifier, and converts L Band 950 to 1,450 MHz


    Original     		NJT5025 NJT5025 NJT5025F NJT5025/25F NJT5025F buc ku WR-75 njt-5025 PDF

    buc ku

    Abstract: ku 4w transmitter HPA Ku WR75 connector "ku band" amplifier NJT5025DF phase detector 10 khz NJT5025D WR-75 microwave radio transmitter
    Text: Ku-band 4W BUC [ Block Upconverter ] With Power Monitor MODEL NO. NJT5025D / 25DF <Description> This unit is the fixed gain transmitter incorporating a low phase noise Phase Locked Local Oscillator and a high reliable MMIC High Power Amplifier, and converts L Band 950 to 1,450 MHz


    Original     		NJT5025D NJT5025D NJT5025DF 21dBm, 25GHz, NJT5025D/25DF buc ku ku 4w transmitter HPA Ku WR75 connector "ku band" amplifier NJT5025DF phase detector 10 khz WR-75 microwave radio transmitter PDF

    ku 4w transmitter

    Abstract: microwave radio transmitter HPA Ku njt5025 NJT5025F 8510 njt-5025 "ku band" amplifier high power microwave transmitter
    Text: Ku-band Transmitter 4.0W Type MODEL NO. NJT5025 / 25F <Description> This unit is the fixed gain transmitter incorporating a low phase noise Phase Locked Local Oscillator and a high reliable MMIC High Power Amplifier, and converts L Band 950 to 1,450 MHz IF Input to Ku Band (14.0 to 14.5 GHz)


    Original     		NJT5025 NJT5025] NJT5025F] ku 4w transmitter microwave radio transmitter HPA Ku NJT5025F 8510 njt-5025 "ku band" amplifier high power microwave transmitter PDF

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original     		H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1 PDF

    MGFS45H2201G

    Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
    Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety


    Original     		H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF176GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF176GU MRF176GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    Original     		MRF176GU/D MRF176GU MRF176GV MRF176GU MRF176GU/D* PDF

    J600 MOSFET

    Abstract: uhf tv power transistor 250w cgs resistor c7 j310 fet RF transformer turn ratio 12 fet j310 planar transformer theory AN211A MRF176 Nippon capacitors
    Text: MOTOROLA Order this document by MRF176GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF176GU MRF176GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    Original     		MRF176GU/D MRF176GU MRF176GV MRF176GU J600 MOSFET uhf tv power transistor 250w cgs resistor c7 j310 fet RF transformer turn ratio 12 fet j310 planar transformer theory AN211A MRF176 Nippon capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original     		MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LU/D* PDF

    MOTOROLA LINEAR HF

    Abstract: MRF175LV Nippon capacitors MRF175
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original     		MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LV MRF175LU/D* MRF175LU/D MOTOROLA LINEAR HF Nippon capacitors MRF175 PDF

    inductor vk200

    Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF175LU MRF175LV VK200 J115 mosfet Nippon capacitors VK200 4B inductor
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original     		MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LU/D* inductor vk200 VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF175LV VK200 J115 mosfet Nippon capacitors VK200 4B inductor PDF

    VK200 20/4B inductor

    Abstract: VK200 inductor of high frequencies VK200 4B inductor 100 watt hf mosfet 12 volt IN 965 b zener diode AN211A MRF175LU MRF175LV VK200 Nippon capacitors
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original     		MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LU/D* VK200 20/4B inductor VK200 inductor of high frequencies VK200 4B inductor 100 watt hf mosfet 12 volt IN 965 b zener diode AN211A MRF175LV VK200 Nippon capacitors PDF

    547 MOSFET

    Abstract: unelco 1073 Nippon capacitors
    Text: MOTOROLA Order this document by MRF176GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    Original     		MRF176GU/D MRF176GU MRF176GV MRF176GU MRF176GV MRF176GU/D 547 MOSFET unelco 1073 Nippon capacitors PDF

    MOSFET J220

    Abstract: planar transformer theory arco 404 MRF175GU 200 watt hf mosfet MRF175GV rf push pull mosfet power amplifier VK200 20/4B inductor vk200 ferrite bead AN211A
    Text: MOTOROLA Order this document by MRF175GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    Original     		MRF175GU/D MRF175GU MRF175GV MRF175GU MRF175GU/D* MOSFET J220 planar transformer theory arco 404 200 watt hf mosfet MRF175GV rf push pull mosfet power amplifier VK200 20/4B inductor vk200 ferrite bead AN211A PDF

    13,56 MHz RFID antenna

    Abstract: "protocol air interface" 709 opto ICS30 pcb antenna 13.56 MHz 817 opto-coupler ic circuit diagram DC-JACK Power Connectors detail SAB-C167CR-LM RM900 long range transmitter block diagram
    Text: SL RM900 I•CODE Long Range Reader Module Hardware Product Specification Revision 1.0 Philips Semiconductors October 1999 I•CODE Long Range Reader SL RM900 Rev. 1.0 October 1999 Table of Contents 1


    Original     		RM900 13,56 MHz RFID antenna "protocol air interface" 709 opto ICS30 pcb antenna 13.56 MHz 817 opto-coupler ic circuit diagram DC-JACK Power Connectors detail SAB-C167CR-LM RM900 long range transmitter block diagram PDF

    transistor A1023

    Abstract: a1023 high power dummy load 50 ohm 200w Bulk Carbon Film Fixed Resistor 5 Watt RMCA Cermet power wire wound resistor 120 ohms j transmitter tube TWT 35KV ri80-150 5W 6.8 ohm k ceramic resistor
    Text: TOKEN HIGH VOLTAGE RESISTOR Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TOKEN HIGH VOLTAGE RESISTOR Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong


    Original     		PDF

    UNELCO

    Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor
    Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


    Original     		MRF275L/D MRF275L UNELCO S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor PDF

    5251f

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET ARCHIVE INFORMATION Designed for broadband commercial and military applications using single


    Original     		MRF275L/D MRF275L 5251f PDF

    VK200 INDUCTOR

    Abstract: Nippon capacitors
    Text: MOTOROLA Order this document by MRF175GU/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistors MRF175GU MRF175GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    Original     		MRF175GU/D MRF175GV MRF175GU MRF175GU MRF175GV MRF175GU/D VK200 INDUCTOR Nippon capacitors PDF

    AN8200

    Abstract: LC PI FILTER DESIGN AN8104 1000 W CLASS D AUDIO AMPLIFIER
    Text: AND8245/D Design Considerations for ESD/EMI Filters: II Low Pass Filters for Audio Filter Applications http://onsemi.com Prepared by: Ryan Hurley ON Semiconductor Applications Engineer APPLICATION NOTE Background For some time now portable electronic devices that have


    Original     		AND8245/D AN8200 LC PI FILTER DESIGN AN8104 1000 W CLASS D AUDIO AMPLIFIER PDF

    6 pin TRANSISTOR SMD CODE CAA

    Abstract: TEA6721 BF991 spice model
    Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、


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    BA 7891 NG

    Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
    Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进


    Original     		PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104 PDF

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF