Untitled
Abstract: No abstract text available
Text: SAW Components SAW Rx 2in1 diplex filter GSM 1800 / GSM 1900 Series/type: Ordering code: B9508 Date: Version: November 18, 2008 1.0 EPCOS AG 2008. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.
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B9508
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Untitled
Abstract: No abstract text available
Text: SAW Components SAW Rx 2in1 filter GSM 850 / GSM 900 Series/type: Ordering code: LR41C Date: Version: March 7, 2008 1.0 EPCOS AG 2008. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.
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LR41C
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Untitled
Abstract: No abstract text available
Text: PEELM M kUY 51C258LT LOW POWER 64Kx4 CHMOS DYNAMIC RAM ¡ n te T 51C258L-12 120 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) 51C258L-15 150 0.1 51C258L-20 200 0.1 • Low Operating Current — 50 mA (max.) ■ Low Power Data Retention - Standby current, CHMOS — 100 /iA
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51C258LT
64Kx4
51C258L-12
51C258L-15
51C258L-20
51C258L
51C258L
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2SK1249
Abstract: F15W50 MOSFET 500V 15A
Text: V X v'j- X /\°7-M 0SFET VX Series Power MOSFET 2SK1249 m n m -ta m C ase F15W50] o u t l i n e d im e n s io n s M T O -3P [Unit I mm] 500V 15A K È Z IÉ • A ^ iS M (C is s 2.0 !tflC -e 'D A '-< 7 X R fflA *g M Ô ^ J v ÿ lV , e X ^ ^ r y i^ A jK iS U o
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2SK1249
F15W50]
2SK1249
F15W50
MOSFET 500V 15A
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MH84
Abstract: MBM2212
Text: aw > <iM 9W > iow-des-dKj < i¿ rta n > (low-dw-iai) <¿¿rt (eow-d&t-dia) 1 ?M ¿ ¿ 5 5 S -S « X I * S v» T m ^ ^ . « S* * » * ^ • * O' > i P * Ve O r .« í *} H- tr 5 9*»* i » * * « H a a 9~ V» á » Si* - Dua l P o r t RAM í£gJttlllllll111 ill II ill
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MB842IÂ
MBW21/22)
MB843I/32)
MH842I)
MB8422)
DIP-48P-M02)
MBS422>
OJP-52P-M01)
DS05-30105-6
MB8421/8422
MH84
MBM2212
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M8421
Abstract: No abstract text available
Text: « I X I « >0T H s >> * » a* * £ * *} h- tr 5 » * » * i u s a i s \U9*n> lOH-dt91dJ <U*9fl> (lOW-d¿S-dK3) <izt*sn> (Zm-d2t-é\Q) ~ *5 £ D ual P o r t R A M _ _ _ Ji o y . 03 s rH Ts e fr □ c v3 7" CD I] > "D 3 I] > 2 ;¿KÍf£igJ£jj*!2!4i!jS!i!i!!!
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DIP-48P-M02)
DIP-S2P-M01)
4P-M01)
MB8422>
MBW71>
MBU21
-90LL
-12LL
MBW21/22)
MBS43*
M8421
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TC-6300
Abstract: 2SK873 miw dc-dc tc6300 Voscm-20
Text: M O S Field Effect Pow er Transistor 2SK873 N f t ^ ^ - M O S FET xmm 2SK873 Ü , •c * > K < , x ^ 7 f > n i i i ; - M OS F E T t i T is d , ¡a s Jf x W & E I T O ! mm -i ■y-f > r-.iiri?;, D C -D C n > ✓ * -? t’ i i i S T 't o & f t °V dss
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2SK873
TC-6300
2SK873
miw dc-dc
tc6300
Voscm-20
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TESLA KU 602
Abstract: TESLA KU 601 tesla ku 611 kd 501 KD 3055 vergleichsliste DDR kd 616 tungsram UNITRA vergleichsliste
Text: r electronic Vergleichsliste Silizium-Leistungstransistoren 1 Vorwort» Die Verglcich8jiatc Silizium - Leistungstransistoren wurde in erste: Linie als Arbeitsmaterial fuer die Applikationsorgane unseres Kombinates zusanmengestellt. Um das Hauptziel dic.aer Liste - NSW - Bauelemente
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O-220
TESLA KU 602
TESLA KU 601
tesla ku 611
kd 501
KD 3055
vergleichsliste DDR
kd 616
tungsram
UNITRA
vergleichsliste
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Untitled
Abstract: No abstract text available
Text: Panasonic For Information Equipment_ MN89302 SVG A Display Controller • Overview The MN89302 is an LCD/CRT display controller with IBM VGA-compatible registers. It features all the neces sary interfaces for a compact display system: ISA bus inter
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MN89302
MN89302
MEMCS16
QFH128-P-1818
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feme a 001 24
Abstract: IC338 feme EFCH EN470 DIP32 LC338128M LC33864M LC33864P lc3381
Text: Ordering number : EN fcc4701 CMOS LSI LC33864P, M, PL, ML-70/80/10 i SA\YO 512 K 65536 words x 8 bits Pseudo-SRAM "S, Preliminary Overview Package D im ^ é lo n f”^ T he L C 33864 series is com posed o f pseudo static R A M unit: m m that operate on a single 5 V pow er supply and is organized
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LC33864P,
ML-70/80/10
LC33854
LC33864
32-pin
C777777/////////////////777
I/01-1/0Ã
feme a 001 24
IC338
feme
EFCH
EN470
DIP32
LC338128M
LC33864M
LC33864P
lc3381
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN fcc4701 CMOS LSI LC33864P, M, PL, ML-70/80/10 i SA\YO 512 K 65536 words x 8 bits Pseudo-SRAM "S, Preliminary Overview Package D im ^ é lo n f”^ T he L C 33864 series is com posed o f pseudo static R A M unit: m m that operate on a single 5 V pow er supply and is organized
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fcc4701
LC33864P,
ML-70/80/10
V7777
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KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e
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YTA F 360
Abstract: ISL 78200 LTB 829 SG-215 tl81 UPD78214 vw polo APD78234 PD78238 KU 607 VB
Text: • N E C s 5^ 1 — M O S r ^ M O S S Ϋ [U S § In te g ra te d C ir c u it PD78234 A ,78238(A) 8 tf y h • V $ "j z f • - e ^ r ^ n z i V t f z L — ^ //P D 78234(A ), 7 8 2 3 8 (A) t ì , 7 8 K /I -> 'J - X f f ) I „ nnT ' î „ S r Z ^ - t r X T ê £ 8 t '- y
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uPD78234
uPD78238
S15ffi5S
78K/H
HI15tt5-
YTA F 360
ISL 78200
LTB 829
SG-215
tl81
UPD78214
vw polo
APD78234
PD78238
KU 607 VB
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2T6551
Abstract: information applikation information applikation mikroelektronik mikroelektronik Heft KD 605 KT825 transistoren KT 960 A Mikroelektronik Information Applikation KT827 mikroelektronik DDR
Text: im S l^ is B le l- c t s n o r iil- c Information Informations- und Applikationshefte „ M IK R O E L E K T R O N IK " Bisher ersch ien en : Heft Heft Heft Heft Heft Heft Heft 1: 2: 3: 4: 5: 6: 7: A 210 und 211 A 301 A 290 A 202 A 244 und A281 Importbauelem ente RGW „IS"
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Untitled
Abstract: No abstract text available
Text: AT&T Data Sheet October 1995 Microelectronics Optimized Reconfigurable Cell Array ORCA 2C Series Field-Programmable Gate Arrays Features Description • High-performance, cost-effective 0.5 |im technology (four-input look-up table delay less than 3.6 ns)
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ATT2C04,
ATT2C06,
ATT2C08,
ATT2C10,
ATT2C12,
ATT2C15,
ATT2C26,
ATT2C40.
DS95-183FPGA
DS95-031
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Untitled
Abstract: No abstract text available
Text: Mitsubishi microcomputers M16C / 61 Group Description SINGLE-CHIP 16-BIT CM OS M ICROCO M PUTER Description The M16C/61 group of single-chip m icrocom puters are built using the high-perform ance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 100-pin plastic molded QFP.
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16-BIT
M16C/61
M16C/60
100-pin
BFF16
COO16
07FFF1
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Untitled
Abstract: No abstract text available
Text: M itsubishi m icrocom puters M16C / 61 Group Description SING LE-CHIP 16-BIT CM OS M ICRO CO M PUTER Description The M16C/61 group of single-chip m icrocom puters are built using the high-perform ance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 100-pin plastic molded QFP.
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16-BIT
M16C/61
M16C/60
100-pin
OFFFF16
CFFFF16
DOOOO16
F7FFF16
F8OOO16
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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