Untitled
Abstract: No abstract text available
Text: Part Number: Integra ILD1214L250 TECHNOLOGIES, INC. L-Band RF Power LDMOS Transistor Silicon LDMOS − High Power Gain − Superior thermal stability The high power pulsed transistor part number ILD1214L250 is designed for L-Band systems operating at 1.2–1.4 GHz. Operating at a pulse width of 1ms with
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ILD1214L250
ILD1214L250
ILD1214L250-REV-NC-DS-REV-A
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2SK3074
Abstract: No abstract text available
Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER l Output Power : PO ≥ 630mW l Power Gain : GP ≥ 14.9dB l Drain Efficiency : ηD ≥ 45% Unit in mm MAXIMUM RATINGS Ta = 25°C
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2SK3074
630mW
SC-62
2SK3074
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Untitled
Abstract: No abstract text available
Text: ADVANCED POW ER Te c h n o l o g y • ARF442 200W 100V 13.56MHz ARF443 200W 100V 13.56MHz THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443. RF OPERATION 1-15MHz POWER MOS IV« N -CHANNEL ENHANCEMENT MODE RF POWER MOSFET_ The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull
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ARF442
56MHz
ARF443
ARF443.
1-15MHz)
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TRANSISTOR BC 136
Abstract: TRANSISTOR SOT-23 marking JE
Text: TELEFUNKEN ELECTRONIC fllC P • a^HDO^b 0005301 b B A L G G BFR 96 M electronic T 'J /-U Creative Technologies Silicon NPN Planar RF Transistor Applications: RF-ampllfier up to GHz range specially for wide band antenna amplifier Features: • High power gain
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JEDECTO50
569-GS
TRANSISTOR BC 136
TRANSISTOR SOT-23 marking JE
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ARF442
Abstract: Class B power amplifier, 13.56MHz 13.56mhz class e power amplifier
Text: ADVANCED PO W ER Te c h n o l o g y ARF442 200W 100V 13.56MHz ARF443 200W 100V 13.56MHz THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443. RF OPERATION 1-15MHz POWER MOS IV« N -C H A NN EL ENHANCEMENT MODE RF POWER MOSFET The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull
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ARF442
56MHz
ARF443
56MHz
ARF443.
1-15MHz)
Class B power amplifier, 13.56MHz
13.56mhz class e power amplifier
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mosfet marking code AL sot-23
Abstract: transistor marking code 24 TRANSISTOR MARKING 24 24 marking transistor transistor marking code AL transistor B 722 MARKING CODE 24 TRANSISTOR Amplifier "marking code" D code marking 2M sot-23 MOSFET S690T
Text: TELEFUNKEN EL ECT RONI C 61C D • fiTBDDTb 0 0 0 5 4 5 b S 690 T trKLKFdDKlKIKl electronic Creative Technologies 4 ■ AL 66 _ r ~ 3 i- L i Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier
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569-GS
mosfet marking code AL sot-23
transistor marking code 24
TRANSISTOR MARKING 24
24 marking transistor
transistor marking code AL
transistor B 722
MARKING CODE 24 TRANSISTOR
Amplifier "marking code" D
code marking 2M sot-23 MOSFET
S690T
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s791
Abstract: transistor B 722
Text: TELEFUNKEN ELECTRONIC T lt U M IM iN l electronic filC D • ÛTBÜG^b 0005437 *3 X -J/-/ r S 79! T Creativo Technotogìes Silicon NPN Planar RF Transistor Applications: RF-amplifier up to GHz range specially for wide band antenna amplifier Feature*: • High power gain
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569-GS
s791
transistor B 722
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13.56mhz power
Abstract: power amplifier, 13.56MHz ARF440
Text: ADVANCED POW ER Te c h n o l o g y ARF440 ARF441 125W 50V 13.56MHz 125W 50V 13.56MHz THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441. RF OPERATION 1-15MHz POWER MOS IV* N -C H A NN EL ENHANCEMENT MODE RF POWER MOSFET ;- if>!EÜ I Æ The ARF440 and ARF441 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull
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ARF440
ARF441
56MHz
56MHz
ARF441.
1-15MHz)
13.56mhz power
power amplifier, 13.56MHz ARF440
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d3008
Abstract: Class E power amplifier, 13.56MHz 13.56Mhz class e power amplifier k 1356 class e and 13.56MHz
Text: A d v a n ced P o w er Te c h n o l o g y * ARF442 200W 100V 13.56MHz ARF443 200W 100V 13.56MHz THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443. Pi F OPERATION 1-15MHz POWER MOS IV N -C H A N N EL ENHANCEMENT MODE RF POWER MOSFET P f& Q M M The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull
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ARF442
56MHz
ARF443
56MHz
ARF443.
1-15MHz)
d3008
Class E power amplifier, 13.56MHz
13.56Mhz class e power amplifier
k 1356
class e and 13.56MHz
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2N4427 equivalent bfr91
Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability
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PoweS3666
MRF3866
2N2857
2N3866
2N5943
MRF904
MRF571
2N4958
2N3160
2N5583
2N4427 equivalent bfr91
bfr90 equivalent
2N5503
MRA1600-30
TPV-595A
2N3553 equivalent
MRF477 equivalent
MRA0500-19L
2N6084 equivalent
MOTOROLA TRANSISTOR MRF239
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BC847
Abstract: LP2951 MRF6522-70 MRF6522-70R3
Text: MOTOROLA O rder this docum ent by M RF6522—70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M RF6522-70 M RF6522-70R3 RF Pow er Field E ffect Transistors N-Channel Enhancement-Mode Lateral MOSFETs D e s ig n e d fo r G S M 9 0 0 fre q u e n c y b a n d , th e h igh g a in and b ro a d b a n d
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RF6522â
MRF6522-70
MRF6522-70R3
MRF6522â
BC847
LP2951
MRF6522-70R3
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Tda 1026
Abstract: FAF 45 DIODE SMD TOKO 10.7MHz filter wide FM stereo MPX Decoder upc 1026 SFE10,7 TDA am/fm TOKO 10.7MHz 7511 AUDIO AMPLIFIER CIRCUIT DIAGRAM tda audio vs 50v
Text: TDA7511 AM/FM TUNER FOR CAR RADIO AND HIFI APPLICATIONS FM-PART • RF AGC GENERATION BY RF AND IF DETECTION FOR PIN DIODES AND MOSFET PRESTAGE ■ 1ST MIXER FOR 1ST FM IF 10.7MHz WITH PROGRAMMABLE IF TANK ADJUST FOR FM AND AM UPCONVERSION ■ 2 PROGRAMMABLE IF-GAIN STAGES
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TDA7511
450KHz
TQFP64
Tda 1026
FAF 45 DIODE SMD
TOKO 10.7MHz filter wide
FM stereo MPX Decoder
upc 1026
SFE10,7
TDA am/fm
TOKO 10.7MHz
7511 AUDIO AMPLIFIER CIRCUIT DIAGRAM
tda audio vs 50v
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Untitled
Abstract: No abstract text available
Text: TDA7511 AM/FM TUNER FOR CAR RADIO AND HIFI APPLICATIONS FM-PART • RF AGC GENERATION BY RF AND IF DETECTION FOR PIN DIODES AND MOSFET PRESTAGE ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e
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TDA7511
450KHz
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smd mosfet z8
Abstract: BC847 LP2951 MRF18090A MRF18090AS BC847 SOT23
Text: MOTOROLA O rder this docum ent by M RF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M R F18090A M R F18090A S RF P o w e r F ield E ffe c t T ra n s is to rs N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up
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MRF18090A/D
465B-02
465C-01
MRF18090A
MRF18090AS
smd mosfet z8
BC847
LP2951
MRF18090AS
BC847 SOT23
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NEC MOSFET PUSHPULL
Abstract: No abstract text available
Text: High Power N-Channel Silicon NEM0899F01-30 MOSFET For Broadcast / Transmitters OUTLINE DIMENSIONS FEATURES_ Units in mm • HIGH OUTPUT POWER: 100 Watts • HIGH GAIN: PACKAGE OUTLINE F01 Linear Gain = 12 dB • LOW INTERMODULATION DISTORTION
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NEM0899F01-30
NEC MOSFET PUSHPULL
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WB1 SOT23
Abstract: transistor WB1 100B100JW TLX8-0300 capacitor 30 mf WB2 SOT23 08053G105ZATEA 100B4R7BW
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband
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MRF9080
MRF9080R3
MRF9080SR3
MRF9080LSR3
WB1 SOT23
transistor WB1
100B100JW
TLX8-0300
capacitor 30 mf
WB2 SOT23
08053G105ZATEA
100B4R7BW
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WB1 SOT23
Abstract: WB2 SOT23
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080S MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband
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MRF9080
MRF9080R3
MRF9080S
MRF9080SR3
MRF9080LSR3
WB1 SOT23
WB2 SOT23
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AGRC10GM
Abstract: JESD22-C101A mosfet 6 ghz z823 1661 mhz
Text: Preliminary Data Sheet November 2004 AGRC10GM 10 W, 2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRC10GM (1.0 GHz to 2.1 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor
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AGRC10GM
AGRC10GM
DS04-260RFPP
JESD22-C101A
mosfet 6 ghz
z823
1661 mhz
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0805 capacitor 10 pf
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.
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MRF9080LR3
MRF9080LSR3
0805 capacitor 10 pf
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MAR 544 MOSFET TRANSISTOR
Abstract: J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi RD70HVF1 7386 mos transistor d 2689 MOSFET 2095 transistor
Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:4th/Mar/02 MITSUBISHI RF POWER MOS FET ELHTROSTATIC SENSITIVE DEVICES RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W DESCRIPTION OUTLINE DRAWING RD70HVF1 is a MOS FET type transistor specifically
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4th/Mar/02
RD70HVF1
75MHz70W
520MHz50W
RD70HVF1
175MHz
520MHz
MAR 544 MOSFET TRANSISTOR
J 6920 FET
MAR 740 MOSFET TRANSISTOR
LA 7814
RD70HVF
7907 mitsubishi
7386 mos
transistor d 2689
MOSFET 2095 transistor
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0203S
Abstract: AGRA10XM JESD22-C101A J162 j507 MOSFET J147
Text: Preliminary Data Sheet April 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz
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AGRA10XM
AGRA10
IS-95
DS04-139RFPP
DS03-127RFPP)
0203S
AGRA10XM
JESD22-C101A
J162
j507
MOSFET J147
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Untitled
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts
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300w fm amplifier
Abstract: FM300-75 300w amplifier 300w power amplifier RF GAIN LTD 300w rf amplifier "RF MOSFET" 300W H101X FM Amplifier 300w
Text: FM300-75 300W - OIRT Band FM Power Amplifier Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistors to enhance ruggedness and reliability. • • • • • • 60 - 75 MHz 48 Volts Input/Output 50 Ω
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FM300-75
Fr300W
40W267
300w fm amplifier
FM300-75
300w amplifier
300w power amplifier
RF GAIN LTD
300w rf amplifier
"RF MOSFET" 300W
H101X
FM Amplifier 300w
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs DEVICE CHARACTERISTICS From Device Data Sheet
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MRF5S21150
MRF5S21150R3
MRF5S21150S
MRF5S21150SR3
RDMRF5S21150UMTS
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