BAS29
Abstract: BAS31 BAS35
Text: Transys Electronics L I M I T E D SOT-23 BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BAS29– L20 BAS31 – L21
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OT-23
BAS29,
BAS31,
BAS35
BAS29
BAS31
BAS35
BAS29
BAS31
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BAY84
Abstract: BAY85S D1850 SDBAX12 bay85 BAS21 A82 d53 MARKING CODE SOT23
Text: SWITCHING DIODES SOT23 PACKAGE Ptot=350mW VR Part No. Marking V BAL99 JF 70 BAR99 JG 70 BAS16 A6 75 BAS19 A8 100 BAS20 A81 150 BAS21 A82 200 BAS29 L20 90 BAS31 L21 90 BAS35 L22 90 BAV70 A4 70 BAV99 A7 70 BAW56 A1 70 BAY84 D49 90 BAY85 D53 240 BAY85S DB6 240
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350mW
BAL99
BAR99
BAS16
BAS19
BAS20
BAS21
BAS29
BAS31
BAS35
BAY84
BAY85S
D1850
SDBAX12
bay85
BAS21 A82
d53 MARKING CODE SOT23
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BAS31
Abstract: BAV19 259-C
Text: BAS31 e? Diserete POWER & Sign al Technologies National Semiconductor“ BAS31 CONNECTION DIAGRAM JH L21 TD— ET SOT-23 High Voltage General Purpose Diode Sourced 'from P rocess 1H. S e e B A V 1 9 / 2 0 / 2 1 for characteristics. Absolute Maximum Ratings*
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OT-23
BAS31
BAV19
bS01130
BAS31
259-C
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Untitled
Abstract: No abstract text available
Text: BAS31 BAS31 Connection Diagram 3 3 3 L21 2 1 1 2 1 2 SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 120 V IF AV Average Rectified Forward Current 200
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BAS31
OT-23
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33L21
Abstract: BAS31 BAV19 GENERAL PURPOSE DIODE
Text: BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 1 2 1 SOT-23 2 1 High Voltage General Purpose Diode Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage
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BAS31
OT-23
BAV19
33L21
BAS31
GENERAL PURPOSE DIODE
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BAS31
Abstract: BAV19
Text: BAS31 BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 SOT-23 1 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage
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BAS31
OT-23
BAV19
BAS31
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BAS31
Abstract: No abstract text available
Text: BAS31 Discrete POWER & Signal Technologies N BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 1 2 1 SOT-23 2 1 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage
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BAS31
OT-23
BAS31
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h8 sot23
Abstract: U37b ELCO-6200-26 R-534 MMBT3904L-SOT23 U37C
Text: 1 2 3 4 5 VMAIN VDD5 H8_VDDA IN SENSE F/B SHUTDN VDD5 BEAD_120Z/100M 0805C 5VTAP OUT ERRGND C244 4.7U 1206 LP2951-02BM/NA R179 100K/NA L23 BEAD_DFS 0603B_DFS 7 H8_VDDA 0805 8 U29 U24 L24 GND 6 L21 GND H8AGND C253 0.1U 0603B 5 VR_CHGNG# 23 PME# 2 THRM_CLK 2 THRM_DATA
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120Z/100M
0805C
100K/NA
RLS4148/NA
MLL34B
DTC144WK/NA
OT23AN
A20GATE
0603B
LP2951-02BM/NA
h8 sot23
U37b
ELCO-6200-26
R-534
MMBT3904L-SOT23
U37C
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CA500
Abstract: Q506 HDS404E LCD13 HDS404-E LCD20 LCD12 DF13-40DP-1 r637 TXOUT09
Text: 2 3 4 5 6 VCC3 VCC3 7 8 VCC3_HPA U510 SI4800DY SO8 +12V R637 0/NA 0805 VCC5 VCC3_HPA D R515 100K 0603 G R516 100K 0603 R638 0805 S 1 +12V R640 LCD PANEL TRANSLATION BD CONNECTOR 9 FPVCC Q502 NDS9410 SO8 D Q500 A G DTC144WK D S 2N7002 SOT23_FET C507 0.01U/NA
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SI4800DY
1000P
2N7002
01U/NA
DTC144WK
NDS9410
TR/3216FF-3A
100PX4
120Z/100M
CA500
Q506
HDS404E
LCD13
HDS404-E
LCD20
LCD12
DF13-40DP-1
r637
TXOUT09
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C-207
Abstract: LCD12 LCD20 C208 J504-1
Text: 1 2 3 4 5 6 7 VCC3 8 +12V VCC3 R196 4.7K 0603B A LCD PANEL TRANSLATION BD CONNECTOR Q24 Q23 SI2302DS SOT23_FET D S G 3 3 A R181 1M 0603B Q27 9 C34 2 FPVCC C55 10P 0603B C41 10P 0603B GND 1 2 3 4 GND CA6 9 33 R37 R46 SCLK LP 9 9 9 9 9 LCD5 LCD4 LCD3 LCD2 LCD13
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0603B
0603B
33P/8P4C
LCD13
LCD12
LCD11
LCD10
LCD17
LCD16
C-207
LCD20
C208
J504-1
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l21 diode marking
Abstract: l21 diode marking c2 diode MARKING CODE l22 marking code C2 diode diode MARKING CODE C2 CODE L22 L21 marking code
Text: Central CMPD1001 CMPD1001A CMPD1001S TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high current capability.
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CMPD1001
CMPD1001A
CMPD1001S
OT-23
CMPD1001A
100mA
200mA
l21 diode marking
l21 diode
marking c2 diode
MARKING CODE l22
marking code C2 diode
diode MARKING CODE C2
CODE L22
L21 marking code
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MARKING CODE l22
Abstract: l21 code diode marking r5 l21 diode l21 diode marking CODE L22 diode marking ja CMPD1001 Marking code TM SOT23-6 CMPD1001S
Text: Central CMPD1001 CMPD1001A CMPD1001S TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for
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CMPD1001
CMPD1001A
CMPD1001S
CMPD1001
OT-23
MARKING CODE l22
l21 code
diode marking r5
l21 diode
l21 diode marking
CODE L22
diode marking ja
Marking code TM SOT23-6
CMPD1001S
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L21 marking code
Abstract: No abstract text available
Text: CMPD1001 CMPD1001A CMPD1001S SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications
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CMPD1001
CMPD1001A
CMPD1001S
CMPD1001
OT-23
100mA
200mA
L21 marking code
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l21 diode
Abstract: l21 diode marking MARKING CODE l22 marking code 35 CODE L22 marking code diode CMPD1001 CMPD1001A CMPD1001S marking code
Text: CMPD1001 CMPD1001A CMPD1001S SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications
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CMPD1001
CMPD1001A
CMPD1001S
CMPD1001
OT-23
100mA
200mA
l21 diode
l21 diode marking
MARKING CODE l22
marking code 35
CODE L22
marking code diode
CMPD1001A
CMPD1001S
marking code
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marking code fs 1 sot 323
Abstract: R5 MARKING CODE diode l22
Text: Central“ CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for
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CMPD1001
CMPD1001A
CMPD1001S
OT-23
CMPD1001S
OPD1001S
marking code fs 1 sot 323
R5 MARKING CODE
diode l22
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smd diode marking A7 SOT-23
Abstract: SMD DIODE A6 t SOT-23 5d smd sot-23 L21 SMD marking codes sot-23 A4 A7 w sot-23 diode SOT89 smd marking A5 sod a4 marking smd diode SOT23 A6 smd diode marking A3 sot23
Text: SMD SWITCHING DIODES DESCRIPTION • Philips Components diodes for switching applications combine the highest quality standards w ith state-of-the-art production equipm ent to fulfill the need for generic, low-cost devices. These sw itching diodes offer a broad
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OT-23
OT-143
PMLL4151
PMLL4153
PMLL4446
PMLL4448
OT-223
OT-143
smd diode marking A7 SOT-23
SMD DIODE A6 t SOT-23
5d smd sot-23
L21 SMD
marking codes sot-23 A4
A7 w sot-23
diode SOT89 smd marking A5
sod a4 marking smd diode
SOT23 A6
smd diode marking A3 sot23
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PXTA14
Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.
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OT143,
OT323,
OD123
OD323
BZV49
BAW56W
BSR40
2PB709AR
BAW56
BSR41
PXTA14
mark a7 sot23
PMBZ52227B
marking CODE M10 SOT89
dc/SOT89 MARKING CODE 3D
2PB710AR
BST60
PMBTA14
PMBT4401
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Untitled
Abstract: No abstract text available
Text: Central" CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring
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CMPD1001
CMPD1001A
CMPD1001S
CMPD1001
OT-23
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L21 marking code
Abstract: CMPD1001S CMPD1001 CMPD1001A marking c2 diode
Text: Central CMPD1001 CMPD1001A CMPD1001S TM Semiconductor Corp. HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring
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CMPD1001
CMPD1001A
CMPD1001S
CMPD1001
OT-23
150oC
100mA
L21 marking code
CMPD1001S
CMPD1001A
marking c2 diode
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YP diode code marking
Abstract: l21 diode marking L21 marking code
Text: Central CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring
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OCR Scan
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CMPD1001
CMPD1001A
CMPD1001S
OT-23
CMPD1001S
100mA
200mA
YP diode code marking
l21 diode marking
L21 marking code
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LF MARKING CODE
Abstract: No abstract text available
Text: Central CMPD1001 CMPD1001A CMPD1001S TM Sem i c o n d u c t o r C o r p . HIGH CURRENT SW ITCHING DIODE DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring
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OCR Scan
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CMPD1001
CMPD1001A
CMPD1001S
OT-23
CMPD1001S
100mA
200mA
LF MARKING CODE
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PDF
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Untitled
Abstract: No abstract text available
Text: Central CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SE M IC O N D U C T O R CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring
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OCR Scan
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CMPD1001
CMPD1001A
CMPD1001S
CMPD1001
OT-23
100mA
200mA
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PDF
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C2 marking code
Abstract: marking code C1 marking code c2 CMPD1001 CMPD1001A CMPD1001S MARKING LP l21 code
Text: Central" CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. HIGH C URRENT SW ITCH IN G DIODE DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring
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OCR Scan
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CMPD1001
CMPD1001A
CMPD1001S
OT-23
CMPD1001S
100mA
200mA
C2 marking code
marking code C1
marking code c2
MARKING LP
l21 code
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L21 marking code
Abstract: No abstract text available
Text: Central CMPD1001 CMPD1001A CMPD1001S Sem icon du ctor Corp. HIGH CURRENT SWITCHING DIODE DESCRIPTION: The C EN TR AL SEM IC O N D U C TO R CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring
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OCR Scan
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CMPD1001
CMPD1001A
CMPD1001S
OT-23
CMPD1001S
100mA
200mA
L21 marking code
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