L2SC3356WT1G
Abstract: L2SC3356WT1
Text: DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device
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Original
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L2SC3356WT1G
L2SC3356WT1
L2SC3356WT3G
SC-70
3000/Tape
10000/Tape
L2SC3356WT1G
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device
|
Original
|
L2SC3356WT1G
L2SC3356WT1
L2SC3356WT3G
SC-70
3000/Tape
10000/Tape
|
PDF
|
L2SC3356WT1G
Abstract: No abstract text available
Text: DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356WT1G S-L2SC3356WT1G DESCRIPTION The L2SC3356WT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. S- Prefix for Automotive and Other Applications Requiring Unique Site
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Original
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L2SC3356WT1G
S-L2SC3356WT1G
L2SC3356WT1
AEC-Q101
L2SC3356WT3G
S-L2SC3356WT3G
SC-70
3000/Tape
L2SC3356WT1G
|
PDF
|