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    LASER DIODE 635 NM Search Results

    LASER DIODE 635 NM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    LASER DIODE 635 NM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    laser diode 635nm

    Abstract: laser diode 635 nm SLD-635-P10-01
    Text: SLD-635-P10-01 UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode SLD-635-P10-01 Specifications Device Package Type Laser Diode TO-18 φ5.6mm •External dimensions(Units : mm) Bottomview ■Absolute Maximum Ratings(Tc=25℃) Symbols Parameter


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    SLD-635-P10-01 635nm laser diode 635nm laser diode 635 nm SLD-635-P10-01 PDF

    SLD-635-P5-02

    Abstract: No abstract text available
    Text: SLD-635-P5-02 UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode SLD-635-P5-02 Specifications Device Package Type Laser Diode TO-18 φ5.6mm •External dimensions(Units : mm) Bottomview ■Absolute Maximum Ratings(Tc=25℃) Symbols Parameter Po


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    SLD-635-P5-02 635nm SLD-635-P5-02 PDF

    635 nm

    Abstract: red laser pointer
    Text: R OITHNER 635 • • • • v1 02/14 Red Laser Pointer 635 nm, <5 mW APC Laser Class 3R Description ROITHNER 635 is a diode laser pointer emitting at typically 635 nm with rated output power of <5 mW. An integrated Automatic Power Control APC circuit ensures excellent output power stability. ROITHNER


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: UL Series Red Laser Diode Module Part No: UL5-3.5G-635 Specification OPTICAL Wavelength 635 nm Optical Output Power 3.5 mW Stability <1% Wavelength Drift 0.2nm/°C Noise 20MHz Bandwidth <0.5% RMS Laser Class Class IIIa Laser Operation Continuous Laser Structure


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    5G-635 20MHz 400-690nm 21CFR PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ M F " / VI SI BLE LASER DIODE / NDL3410ST, NDL3410SU 5 mW, 635 nm AIGalnP MQW VISIBLE LASER DIODE FOR DVD, DVD-ROM APPLICATIONS DESCRIPTION ★ NDL341OST, NDL341OSU are AIGalnP 635 nm visible laser diodes and especially developed for DVD, DVD-ROM.


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    NDL3410ST, NDL3410SU NDL341OST, NDL341OSU PDF

    Untitled

    Abstract: No abstract text available
    Text: UL Series Red Laser Diode Module Part No: UL5-1G-635 Specification OPTICAL Wavelength 635 nm Optical Output Power <1 mW Stability <1% Wavelength Drift 0.2nm/°C Noise 20MHz Bandwidth <0.5% RMS Laser Class Class II Laser Operation Continuous Laser Structure


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    UL5-1G-635 20MHz 400-690nm 21CFR PDF

    635-P5-C-N-RG-300-02

    Abstract: SLD-635-P5-C-N-RG-300-02 laser diode 635 nm laser diode chip 635nm 635nm laser diode bare chip
    Text: 635-P5-C-N-RG-300-02 UNION OPTRONICS CORP. 635nm Laser Diode chips 635nm Red Laser Diode Chips SLD-635-P5-C-N-RG-300-02 size : 300*300um Specifications Device Laser Diode Bare Chip Structure Multi-step growth •External dimensions Units : um P-electrode


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    635-P5-C-N-RG-300-02 635nm SLD-635-P5-C-N-RG-300-02 300um 500um 100um 886-3-475-437e 635-P5-C-N-RG-300-02 SLD-635-P5-C-N-RG-300-02 laser diode 635 nm laser diode chip 635nm laser diode bare chip PDF

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    Abstract: No abstract text available
    Text: UL Series Red Laser Diode Module Part No: UL5-0.4G-635 Specification OPTICAL Wavelength 635 nm Optical Output Power <0.4 mW Stability <1% Wavelength Drift 0.2nm/°C Noise 20MHz Bandwidth <0.5% RMS Laser Class Class I IEC Laser Operation Continuous Laser Structure


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    4G-635 20MHz PDF

    635 nm

    Abstract: RLTMRL_III_635_1-500MW
    Text: RLTMRL-III-635 1-500 mW Red Diode Laser 635 nm red diode laser featuring compact size, long lifetime, and low cost, and easy operatability, which is widely used for scientific experiments, measurements, optical sensors, communication, spectrum analysis, medical treatment, etc.


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    RLTMRL-III-635 90-260VAC) TEM00 60VAC) 1-30kHz, SMA-905/FC 1-500mw 635 nm RLTMRL_III_635_1-500MW PDF

    laser diode 635 nm

    Abstract: 150X1
    Text: LDX Optronics Inc. LDX-2315-635 High Power CW Operation 300 miliwatts High Brightnessµm emitter size. Wavelength 635 ±3 nm standard The LDX-2315-635 laser diode is a high power, multimode, infrared laser diode. These AlGaInP broad-area, gain-guided lasers are produced using MOCVD growth which offers high efficiency, low


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    LDX-2315-635 LDX-2315-635 wil00 150x1 laser diode 635 nm 150X1 PDF

    laser diode bare chip

    Abstract: laser diode chip 635nm
    Text: SLD-635-P5-C-N-RG-300-04 UNION OPTRONICS CORP. 635nm Laser Diode Chips 635nm Red Laser Diode Chips SLD-635-P5-C-N-RG-300-04 •Specifications 1 Size : (2) Device: (3) Structure: 300*300*100µm Laser diode bare chip Multi-step growth ■External dimensions(Unit : m)


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    SLD-635-P5-C-N-RG-300-04 635nm laser diode bare chip laser diode chip 635nm PDF

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    Abstract: No abstract text available
    Text: ROITHNER LASERTECHNIK PRESENTS NEW HIGH POWER RED LASER DIODES 9 mm laser diode package RLT635-100G, 635 nm, 100 mW, mm, 9 mm, datasheet RLT650-200G, 650 nm, 200 mW, mm, 9 mm, with photodiode, datasheet TO3 laser diode package RLT635-150-TO3, 635 nm, 150 mW, mm, TO3, without photodiode, datasheet


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    RLT635-100G, RLT650-200G, RLT635-150-TO3, RLT635-300-TO3, RLT635-500-TO3, RLT65300T, RLT650-500-T, RLT650-1000-T, RLT635-150-C, PDF

    CQ 637

    Abstract: DL-3038-023
    Text: Ordering number : EN5854 Red Laser Diode DL-3038-023 AIGalnP Laser Diode Overview Package Dimensions DL-3038-023 is 635 nm Typ. AIGalnP laser diode with low threshold current. The low threshold current and short wavelength are achieved by use of a strained


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    EN5854 DL-3038-023 DL-3038-023 CQ 637 PDF

    670NM Laser-Diode

    Abstract: DL-3148-033
    Text: Ordering number : EN5860 Red Laser Diode D L -3 148-033 Index Guided AIGalnP Laser Diode Overview Package Dimensions The DL-3148-033 is index guided 635 nm Typ. AIGalnP laser diode with low threshold current and high operating temperature. The low threshold


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    EN5860 DL-3148-033 DL-3148-033 635nm 670nm 670NM Laser-Diode PDF

    DL-3148-021

    Abstract: En58
    Text: Ordering number : EN5858 Red Laser Diode D L -3148-021 Index Guided AIGalnP Laser Diode Overview Package Dimensions DL-3148-021 is 635 nm Typ. index guided AIGalnP laser diode with low threshold current. The low threshold current and short wavelength are


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    EN5858 DL-3148-021 DL-3148-021 En58 PDF

    Untitled

    Abstract: No abstract text available
    Text: Red Laser Diode DL-LS42_ DL-LS42 is index guided 635 nm Typ. AIGalnP laser diode with low threshold current and high operating temperature. The low threshold current and high operating temperature are achieved by a strained multiple quantum well active layer. The lasing wavelength is 635 nm which is the same


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    DL-LS42_ DL-LS42 D014427 PDF

    30380

    Abstract: DL-3038-011
    Text: Ordering number : EN5853 Red Laser Diode D L-3038-011 Index Guided AIGalnP Laser Diode Overview DL-3038-011 is index guided 635 nm Typ. AIGalnP laser diode. The low threshold current and short wavelength are achieved by a strained multiple quantum well active layer.


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    EN5853 DL-3038-011 DL-3038-011 30380 PDF

    DL-3038-011

    Abstract: No abstract text available
    Text: Ordering number : EN5853A DL-3038-011 Red Laser Diode DL-3038-011 Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3038-011 is index guided 635 nm Typ. AlGaInP laser diode. The low threshold current and short wavelength are achieved by a strained


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    EN5853A DL-3038-011 DL-3038-011 PDF

    4038

    Abstract: EN5857 dl-4038-021
    Text: Ordering number : EN5857A DL-4038-021 Red Laser Diode DL-4038-021 High Power AlGaInP Laser Diode Overview Package Dimensions DL-4038-021 is a high power 635 nm Typ. AlGaInP laser diode with low threshold current. High output power and low threshold current are


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    EN5857A DL-4038-021 DL-4038-021 4038 EN5857 PDF

    635 nm

    Abstract: No abstract text available
    Text: RLCB635-2.5-3 TECHNICAL DATA Red Cross Line Laser Diode Module Small size red cross line diode laser module at 635 nm, featuring low cost, long lifetime and small size package, which can be used for laser medical treatment, scientific experiment, optical instrument, laser


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    RLCB635-2 635 nm PDF

    DL-3148-033

    Abstract: No abstract text available
    Text: Ordering number : EN5860A DL-3148-033 Red Laser Diode DL-3148-033 Index Guided AlGaInP Laser Diode Overview Package Dimensions The DL-3148-033 is index guided 635 nm Typ. AlGaInP laser diode with low threshold current and high operating temperature. The low threshold


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    EN5860A DL-3148-033 DL-3148-033 635nm 670nm PDF

    Untitled

    Abstract: No abstract text available
    Text: laser diode module, elliptical beam, ø12mm A compact, ergonomically-designed 635/639nm laser diode module for a wide range of applications such as industrial alignment, positioning and inspection and sensing. Laser diode modules from the Optoelectronics Company are available in


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    635/639nm 405nm 852nm, PDF

    DL-3038-023

    Abstract: No abstract text available
    Text: Ordering number : EN5854A DL-3038-023 Red Laser Diode DL-3038-023 AlGaInP Laser Diode Overview Package Dimensions DL-3038-023 is 635 nm Typ. AlGaInP laser diode with low threshold current. The low threshold current and short wavelength are achieved by use of a strained


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    EN5854A DL-3038-023 DL-3038-023 PDF

    laser diode 635 nm

    Abstract: P1003
    Text: SLD-635-P10-03 UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode SLD-635-P10-03 •Features • Maximum Optical Output Power: 12mW • Lasing Wavelength: 635nm Band • Optimized Strained MQW Structure • Multi-Step MOCVD growth • Stable Fundamental Mode Operation Achieved by Complex Index Guided Structure


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    SLD-635-P10-03 635nm O18-5 886-3-475-437ure laser diode 635 nm P1003 PDF