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    LASER DIODE BARE CHIP Search Results

    LASER DIODE BARE CHIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    LASER DIODE BARE CHIP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    U-CP-9850044

    Abstract: No abstract text available
    Text: U-CP-9850044 UNION OPTRONICS CORP. 980nm Laser Diode Chips 980nm Laser Diode Chips U-CP-9850044 •Specifications 1 Size : (2) Device: (3) Structure 300*300*100 m Laser diode bare chip Double channel , single ridge waveguide 300μm ■External dimensions(Unit : μm)


    Original     		U-CP-9850044 980nm U-CP-9850044 PDF

    U-CP-80B0065

    Abstract: diode laser 808nm 200mW TO-CAN 808nm 808nm laser diode laser diode bare chip laser diode 808nm
    Text: U-CP-80B0065 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80B0065 •Specifications 1 Size : (2) Device: (3) Structure 300*500*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm) 500μm


    Original     		U-CP-80B0065 808nm U-CP-80B0065 diode laser 808nm 200mW TO-CAN 808nm laser diode laser diode bare chip laser diode 808nm PDF

    U-CP-80C0055-preliminary

    Abstract: 808nm 300mw laser diode laser diode 300mw TO-CAN 808nm 300mW TO18 Laser 808nm 300 mw 808nm laser diode laser diode bare chip
    Text: U-CP-80C0055-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80C0055-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*400*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)


    Original     		U-CP-80C0055-preliminary 808nm 886-3-g U-CP-80C0055-preliminary 808nm 300mw laser diode laser diode 300mw TO-CAN 808nm 300mW TO18 Laser 808nm 300 mw 808nm laser diode laser diode bare chip PDF

    TO18 Laser 808nm 300 mw

    Abstract: IR Laser diode laser diode bare chip
    Text: U-CP-80E0075-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80E0075-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*600*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)


    Original     		U-CP-80E0075-preliminary 808nm 886-3-g TO18 Laser 808nm 300 mw IR Laser diode laser diode bare chip PDF

    U-CP-6505001

    Abstract: laser diode bare chip
    Text: U-CP-6505001 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505001 •Specifications 1 Size : (2) Device: (3) Structure: 200*250*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)


    Original     		U-CP-6505001 650nm 300um 100um U-CP-6505001 laser diode bare chip PDF

    laser diode bare chip

    Abstract: No abstract text available
    Text: U-CP-6505021 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505021 •Specifications 1 Size : (2) Device: (3) Structure: 250*300*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)


    Original     		U-CP-6505021 650nm laser diode bare chip PDF

    U-CP-6505011

    Abstract: 650nm 5mw laser 300um 650nm 5mw laser diode laser diode bare chip
    Text: U-CP-6505011 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505011 •Specifications 1 Size : (2) Device: (3) Structure: 250*250*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)


    Original     		U-CP-6505011 650nm 300um 100um U-CP-6505011 650nm 5mw laser 300um 650nm 5mw laser diode laser diode bare chip PDF

    TO18 Laser 808nm 300 mw

    Abstract: 808nm laser diode diode laser 808nm 200mW 808nm pad to18 Laser Diode 250mW p1875mw laser diode bare chip
    Text: SLD-808-P200-C-03 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-03 •Specifications 1 Size : (2) Device: (3) Structure 500*300*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)


    Original     		SLD-808-P200-C-03 808nm 886-3-485ard 200mW 250mW 125mW TO18 Laser 808nm 300 mw 808nm laser diode diode laser 808nm 200mW pad to18 Laser Diode 250mW p1875mw laser diode bare chip PDF

    Laser Diode 808 300 mw

    Abstract: No abstract text available
    Text: SLD-808-P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-04 •Specifications 1 Size : (2) Device: (3) Structure 500*300*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)


    Original     		SLD-808-P200-C-04 808nm 886-3-485-268in Laser Diode 808 300 mw PDF

    650nm 5mw laser diode

    Abstract: No abstract text available
    Text: U-CP-6505131 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505131 •Specifications 1 Size : (2) Device: (3) Structure: 300*250*100 m Laser diode bare chip Strained MQW and Multi-step MOCVD growth μm ■External dimensions(Unit : μm)


    Original     		U-CP-6505131 650nm 650nm 5mw laser diode PDF

    X100M

    Abstract: laser diode bare chip
    Text: SLD-980-P50-C-300-03 UNION OPTRONICS CORP. 980nm Laser Diode chips 980nm Laser Diode Chips SLD-980-P50-C-300-02 size :300*300 m Specifications Device Laser Diode Bare Chip Structure Double Channel , Single Ridge Waveguide 300µ m •External dimensions Unit : μm


    Original     		SLD-980-P50-C-300-03 980nm SLD-980-P50-C-300-02 x300m x100m laser diode bare chip PDF

    635-P5-C-N-RG-300-02

    Abstract: SLD-635-P5-C-N-RG-300-02 laser diode 635 nm laser diode chip 635nm 635nm laser diode bare chip
    Text: 635-P5-C-N-RG-300-02 UNION OPTRONICS CORP. 635nm Laser Diode chips 635nm Red Laser Diode Chips SLD-635-P5-C-N-RG-300-02 size : 300*300um Specifications Device Laser Diode Bare Chip Structure Multi-step growth •External dimensions Units : um P-electrode


    Original     		635-P5-C-N-RG-300-02 635nm SLD-635-P5-C-N-RG-300-02 300um 500um 100um 886-3-475-437e 635-P5-C-N-RG-300-02 SLD-635-P5-C-N-RG-300-02 laser diode 635 nm laser diode chip 635nm laser diode bare chip PDF

    SLD-980-P50-C-300-05

    Abstract: ridge waveguide semiconductor laser laser diode 980nm
    Text: SLD-980-P50-C-300-05 UNION OPTRONICS CORP. 980nm Laser Diode Chips 980nm Laser Diode Chips SLD-980-P50-C-300-05 •Specifications 1 Size : (2) Device: (3) Structure 300*300*100 m Laser diode bare chip Double channel , single ridge waveguide 300µm ■External dimensions(Unit : μm)


    Original     		SLD-980-P50-C-300-05 980nm SLD-980-P50-C-300-05 ridge waveguide semiconductor laser laser diode 980nm PDF

    Untitled

    Abstract: No abstract text available
    Text: SLD-980-P50-C-300-04 UNION OPTRONICS CORP. 980nm Laser Diode Chips 980nm Laser Diode Chips SLD-980-P50-C-300-04 •Specifications 1 Size : (2) Device: (3) Structure 300*300*100µm Laser diode bare chip Double channel , single ridge waveguide 300µm ■External dimensions(Unit : m)


    Original     		SLD-980-P50-C-300-04 980nm PDF

    650NM laser diode 5mw

    Abstract: DVD laser U-CP-6505142 laser diode DVD DVD diode 300 mW dvd pulse laser diode DVD laser assembly Laser Diode for dvd laser diode bare chip dvd laser diode
    Text: U-CP-6505142 UNION OPTRONICS CORP. 650nm Laser Diode chips for DVD 650nm Red Laser Diode Chips for DVD U-CP-6505142 •Specifications 1 Size : (2) Device: (3) Structure: 300*300*100 m DVD Laser diode bare chip Strained MQW and Multi-step MOCVD growth ■External dimensions(Unit : μm)


    Original     		U-CP-6505142 650nm 2008/in 650NM laser diode 5mw DVD laser U-CP-6505142 laser diode DVD DVD diode 300 mW dvd pulse laser diode DVD laser assembly Laser Diode for dvd laser diode bare chip dvd laser diode PDF

    laser diode bare chip

    Abstract: laser diode chip 635nm
    Text: SLD-635-P5-C-N-RG-300-04 UNION OPTRONICS CORP. 635nm Laser Diode Chips 635nm Red Laser Diode Chips SLD-635-P5-C-N-RG-300-04 •Specifications 1 Size : (2) Device: (3) Structure: 300*300*100µm Laser diode bare chip Multi-step growth ■External dimensions(Unit : m)


    Original     		SLD-635-P5-C-N-RG-300-04 635nm laser diode bare chip laser diode chip 635nm PDF

    10g DFB

    Abstract: dfb 10g dfb laser 1300 nm bare die DFB 1300 rise time laser diode bare chip DFB laser bare die
    Text: PRELIMINARY DATASHEET | MAY 21, 2004 Uncooled 4 Gb/s CWDM DFB Bare Die The 4 Gb/s CWDM DFB laser diode chip is designed to facilitate extended temperature operation. Target applications include LX4 transceivers, SONET OC-48, and SDH STM-16. Performance Highlights


    Original     		OC-48, STM-16. OC-48 STM-16 10g DFB dfb 10g dfb laser 1300 nm bare die DFB 1300 rise time laser diode bare chip DFB laser bare die PDF

    10g DFB

    Abstract: 10 gb laser diode 1310 nm dfb 10g 10G bare die DFB TO 10DFB ca 91803
    Text: PRELIMINARY DATASHEET | MAY 5, 2004 Uncooled 10 Gb/s 1310 nm DFB Bare Die The 10 Gb/s 1310 nm DFB laser diode chip is designed to facilitate extended temperature operation. Target applications include SONET OC-192, SDH STM-64, 10 Gigabit Ethernet, 10G Fibre Channel, and


    Original     		OC-192, STM-64, 10GBASE-L OC-192 STM-64 10g DFB 10 gb laser diode 1310 nm dfb 10g 10G bare die DFB TO 10DFB ca 91803 PDF

    10 gb laser diode 1310 nm

    Abstract: laser diode bare chip DFB laser bare die sdh markings bare die
    Text: PRELIMINARY DATASHEET | MAY 14, 2004 Uncooled 2.5 Gb/s 1310 nm DFB Bare Die The 2.5 Gb/s 1310 nm DFB laser diode chip is designed to facilitate extended temperature operation. Target applications include SONET OC-48, SDH STM-16, Gigabit Ethernet, and fiber optic sensors.


    Original     		OC-48, STM-16, OC-48 STM-16 10 gb laser diode 1310 nm laser diode bare chip DFB laser bare die sdh markings bare die PDF

    Laser diode Fabry-Perot

    Abstract: FP 1310 2.5G TO
    Text: PRELIMINARY DATASHEET | MAY 14, 2004 Uncooled 2.5 Gb/s 1310 nm Fabry-Perot Bare Die The 2.5 Gb/s 1310 nm Fabry-Perot laser diode chip is designed to facilitate extended temperature operation. Target applications include SONET OC-48, SDH STM-16, Gigabit Ethernet, and fiber optic sensors.


    Original     		OC-48, STM-16, OC-48 STM-16 Laser diode Fabry-Perot FP 1310 2.5G TO PDF

    Untitled

    Abstract: No abstract text available
    Text: Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip (Preliminary) DESCRIPTION Quantum Photonics’ Single Angled Facet (SAF) gain chip is based on high-power InP ridge waveguide laser diode technology. Laser cavity oscillation is prevented by active waveguide engineering to produce a front angled facet which in combination with antireflection coating ensures a broadband low facet reflectivity. Optional mode transformers monolithically incorporated at the facets


    Original     		PDF

    Laser Diode 1550 nm

    Abstract: Fabry-Perot 1550 nm Quantum Photonics Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip laser diode bare chip 1550 Laser InP tunable lasers diode applications Fabry-Perot-Laser-Diode 1550 laser diode Laser diode Fabry-Perot
    Text: Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip (Preliminary) DESCRIPTION Quantum Photonics’ Single Angled Facet (SAF) gain chip is based on high-power InP ridge waveguide laser diode technology. Laser cavity oscillation is prevented by active waveguide engineering to produce a front angled facet which in combination with antireflection coating ensures a broadband low facet reflectivity. Optional mode transformers monolithically incorporated at the facets


    Original     		PDF

    Germanium PIN laser diode

    Abstract: receiver pin diode for 10Gbps silicon diode and germanium tunable lasers diode applications 3.3v laser diode stm 64 APD 10gbps Germanium Power Diodes laser driver, STM-64 bare die FOA3251B1
    Text: High Speed Communication ICs Product Overview Function Transceiver Functions: Part Number Clock and Data Recovery FOA3251B1 Clock and Data Recovery FOA3100xB1 MUX/CMU FOA4100xB1 MUX/CMU FOA4400xA DEMUX/CDR FOA5100xB1 DEMUX/CDR FOA5400xA Ø MUX/CMU Ø DEMUX/CDR


    Original     		FOA3251B1 FOA3100xB1 FOA4100xB1 FOA4400xA FOA5100xB1 FOA5400xA 10Gbps OC-192/ STM-64 10Gbps Germanium PIN laser diode receiver pin diode for 10Gbps silicon diode and germanium tunable lasers diode applications 3.3v laser diode stm 64 APD 10gbps Germanium Power Diodes laser driver, STM-64 bare die FOA3251B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: VITESSE SEMICONDUCTOR CORPORATION Target Specification SONET/SDH 10.7Gb/s Laser Diode Driver VSC7990 Features • Typical Rise Times of 25ps • Direct Access to Modulation and Bias FETs • On-chip Reclocking Register • On-chip Mux for Selectable Clocked or Nonclocked Applications


    Original     		VSC7990 100mA VSC7990 G52303-0, PDF