LED 5630
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 128K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V7399S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 128K x 18 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 2K x 18 banks
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IDT70V7399S
166MHz
133MHz)
12Gbps
208-pin
BF-208)
144-pin
DA-144)
LED 5630
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LED 5630
Abstract: 5630 LED A101L 5630
Text: HIGH-SPEED 3.3V 128K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE IDT70V7399S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 128K x 18 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 2K x 18 banks – 2 megabits of memory on chip
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IDT70V7399S
200MHz
166MHz
133MHz)
14Gbps
SMEN-01-05
LED 5630
5630 LED
A101L
5630
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70V7319
Abstract: IDT70V7319 IDT70V7319S 5629
Text: HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V7319S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 256K x 18 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 18 banks
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IDT70V7319S
166MHz
133MHz)
12Gbps
SMEN-01-05
70V7319
IDT70V7319
IDT70V7319S
5629
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ba6l
Abstract: 70V7319 IDT70V7319 IDT70V7319S
Text: HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE IDT70V7319S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 256K x 18 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 18 banks
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IDT70V7319S
200MHz
166MHz
133MHz)
14Gbps
BC-256
ba6l
70V7319
IDT70V7319
IDT70V7319S
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V7339S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 512K x 18 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 8K x 18 banks
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IDT70V7339S
166MHz
133MHz)
12Gbps
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A101L
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 128K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 128K x 18 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 2K x 18 banks – 2 megabits of memory on chip
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IDT70V7399S
200MHz
166MHz
133MHz)
14Gbps
BC-256
A101L
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE IDT70V7319S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 256K x 18 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 18 banks
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IDT70V7319S
200MHz
166MHz
133MHz)
14Gbps
BC-256
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V7319S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 256K x 18 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 18 banks
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Original
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PDF
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IDT70V7319S
166MHz
133MHz)
12Gbps
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V7339S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 512K x 18 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 8K x 18 banks
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IDT70V7339S
166MHz
133MHz)
12Gbps
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AT42QT
Abstract: QT1110 qtan dht 22 Notch filter 50Hz 60Hz AT42QT1111 QT1110 atmel Refer to Application Note QTAN0002 atmel capacitive touch ic specification qt111
Text: Features • Sensor Keys: • • • • • • • • • • • • • • • • • • • – Up to 11 QTouch channels Data Acquistion: – Measurement of keys triggered either by a signal applied to the SYNC pin or at regular intervals timed by the AT42QT1111's internal clock
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AT42QT1111
9571B
AT42QT
QT1110
qtan
dht 22
Notch filter 50Hz 60Hz
QT1110 atmel
Refer to Application Note QTAN0002
atmel capacitive touch ic specification
qt111
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Untitled
Abstract: No abstract text available
Text: Atmel AT42QT1111-MU AT42QT1111-AU 11-key QTouch Touch Sensor IC DATASHEET Features Sensor Keys: Up to 11 QTouch® channels Data Acquisition: Measurement of keys triggered either by a signal applied to the SYNC pin or at regular intervals timed by the AT42QT1111 internal clock
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AT42QT1111-MU
AT42QT1111-AU
11-key
AT42QT1111
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ltc1021
Abstract: 74HC115 CS5324-BL 61841 74HC590 applications 79L05ACZ 2628 cs5324 passive sonar block diagram 12472
Text: CS5324 120 dB, 500 Hz Oversampling A/D Converter Features Description l Monolithic very high resolution A/D converter intended for geophysical and sonar applications. It is a complete analog front end to a Digital Signal Processor and provides the DSP with a low distortion digital input suitable for precision
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CS5324
CS5324
dc-500
CDB5324
DS36DB1
CDB5324
ltc1021
74HC115
CS5324-BL
61841
74HC590 applications
79L05ACZ
2628
passive sonar block diagram
12472
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IDT70T631
Abstract: 70T633
Text: HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max.
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512/256K
10/12/15ns
IDT70T633/1
IDT70T633/1S
BF-208)
70T633
70T631
IDT70T631
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Untitled
Abstract: No abstract text available
Text: Features • Sensor Keys: • • • • • • • • • • • • • • • • • • • – Up to 11 QTouch channels Data Acquistion: – Measurement of keys triggered either by a signal applied to the SYNC pin or at regular intervals timed by the AT42QT1110's internal clock
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AT42QT1110
9570Iâ
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QTAN0002
Abstract: AT42QT1111AU QT1111 AT42QT1111-AU QTAN00 Application Note QTAN0002 atmel TQFP Package 64 lead code date marking QT1110 XC6215 qtan
Text: Features • Sensor Keys: • • • • • • • • • • • • • • • • • • • – Up to 11 QTouch channels Data Acquistion: – Measurement of keys triggered either by a signal applied to the SYNC pin or at regular intervals timed by the AT42QT1110's internal clock
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AT42QT1110
QTAN0002
AT42QT1111AU
QT1111
AT42QT1111-AU
QTAN00
Application Note QTAN0002
atmel TQFP Package 64 lead code date marking
QT1110
XC6215
qtan
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QTAN0002
Abstract: at42qt QT1110AZ45 QT1110 atmel AT42QT1110 ATMEL 2416 2416 EEPROM QT111 QTAN00 "mains transformer" 1280
Text: Features • Sensor Keys: • • • • • • • • • • • • • • • • • • • – Up to 11 QTouch channels Data Acquistion: – Measurement of keys triggered either by a signal applied to the SYNC pin or at regular intervals timed by the AT42QT1110's internal clock
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AT42QT1110
9570I
QTAN0002
at42qt
QT1110AZ45
QT1110 atmel
ATMEL 2416
2416 EEPROM
QT111
QTAN00
"mains transformer" 1280
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Untitled
Abstract: No abstract text available
Text: Atmel AT42QT1110-MZ AT42QT1110-AZ 11-key QTouch Touch Sensor IC DATASHEET Features Sensor Keys: Up to 11 QTouch® channels Data Acquisition: Measurement of keys triggered either by a signal applied to the SYNC pin or at regular intervals timed by the AT42QT1110 internal clock
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AT42QT1110-MZ
AT42QT1110-AZ
11-key
AT42QT1110
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A18R
Abstract: 70T633
Text: HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ Full hardware support of semaphore signaling between ports on-chip On-chip port arbitration logic Fully asynchronous operation from either port
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512/256K
BGA-208
BGA-256
100mV)
150mV
256-ball
144-pin
208-ball
A18R
70T633
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 2.5V PRELIMINARY 512/256/128K X 18 IDT70T3339/19/99S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access
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512/256/128K
IDT70T3339/19/99S
200MHz
166MHz
133MHz)
14Gbps
and613
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LTLD505T
Abstract: LTC-4627G LTP14158AG LTC-2623G ltc4627g 5250P LTL353CKH3 LTP-14158AG LTC2723E LTC-5337E
Text: Alphanumeric Index LBL-9316G. 10-2 LTA-1000E. 11-13
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LBL-9316G.
LBL-9667G.
LBL-9752G.
LTA-1000E.
LTA-1000G.
LTA-1000HR.
LTA-1000P.
LTA-1000R.
LTA-1000Y.
LTC-14501A1G-12.
LTLD505T
LTC-4627G
LTP14158AG
LTC-2623G
ltc4627g
5250P
LTL353CKH3
LTP-14158AG
LTC2723E
LTC-5337E
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motorola ar254
Abstract: AR254 book 1977
Text: AR254 Article Reprint Phase-Locked Loop Design Articles • “Analyze, Don't Estimate, P hase-Locked Loop Performance" • "Optim ize P h a se-L o ck Loops to Meet Your Needs — Or Determine Why You Can t" • “Suppress P h a se-L o ck-Lo o p Sidebands W ithout
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PDF
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AR254
BR1334
motorola ar254
AR254
book 1977
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transistor SMD n 03a
Abstract: No abstract text available
Text: Temic BUD600 Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate • Very low switching losses Very low dynamic saturation Very low operating temperature
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PDF
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BUD600
BUD600
D-74025
18-Jul-97
transistor SMD n 03a
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BUD630
Abstract: No abstract text available
Text: Temic BUD630 Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate • Very low switching losses Very low dynamic saturation Very low operating temperature
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PDF
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BUD630
BUD630
D-74025
18-Jul-97
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Untitled
Abstract: No abstract text available
Text: I Radiation Hardened 7025RP High - Speed 8K x 16 Dual - Port Static RAM For Space Applications sEl's 7025RP RP for RADPAK high speed CMOS micro circuit features a minimum 100 kilorad (Si) total dose tolerance. Using SEI’s radiation hardened RAD-PAK®packaging technology,
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7025RP
7025RP
128K-bit
32-bit
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