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    NSI IPLD2-5C

    Vision Clr Ins Dse 2-14 5Pt Culus Listed Wire Connector Ul486B 600V Cu9Al
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    NAC IPLD2-5C 1
    • 1 $29.11
    • 10 $27.65
    • 100 $27.65
    • 1000 $27.65
    • 10000 $27.65
    Buy Now

    NSI IPLD2-5CB

    VISION CLR INS DSE 2-14 5PT cULus Listed Wire Connector UL486B 600v CU9AL(1 EA/BAG)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    NAC IPLD2-5CB 1
    • 1 $29.11
    • 10 $27.65
    • 100 $27.65
    • 1000 $27.65
    • 10000 $27.65
    Buy Now

    LD25C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    centronic LD2

    Abstract: LD2-5A LD12-5A LD16-5A LD16-5C LD20-5 LD35-5 LD50-5
    Text: CENTRONIC LTD hse t> m m s i a ? o o o o o n b • c e n t r*y/-v£r* Silicon Photodetectors_ Series 5 Low Cost Photovoltaic Linear Arrays The Series 5 are a range of multiple element low cost linear arrays for photovoltaic operation offering both high blue sensitivity and high


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    PDF LD12-5A LD16-5A LD16-5C LD20-5 LD35-5* LD50-5 centronic LD2 LD2-5A LD35-5

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors N-channel TrenchMOS transistor SYMBOL FEATURES • • • • IRF640, IRF640S QUICK REFERENCE DATA ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance V dss —200 V lD = 16 A


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    PDF IRF640, IRF640S IRF640 T0220AB) IRF640S OT404

    PHN220

    Abstract: 98 100 16 capacitor SOT96
    Text: Objective specification Philips Semiconductors TrenchMOS transistor FEATURES PHN220 SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance


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    PDF PHN220 PHN220 98 100 16 capacitor SOT96

    GIS 110 kV

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification BUK9880-55 TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very


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    PDF BUK9880-55 OT223 OT223. 35\im GIS 110 kV

    BUK445

    Abstract: BUK445-60A BUK445-60B
    Text: PHILIPS INTERNATIONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    PDF 711002b BUK445-60A/B -SOT186 DS/V-12/ ID/100 BUK445 BUK445-60A BUK445-60B

    Untitled

    Abstract: No abstract text available
    Text: CENTRONIC LTD MSE D m s ia ? ooooon t cENTr*y/-y^- Silicon Photodetectors Series 5 Low Cost Photovoltaic Linear Arrays The Series 5 are a range of m ultiple elem ent low cost linear arrays for photovoltaic operation offering both high blue sensitivity and high


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    PDF

    lg ipm

    Abstract: PHT11N06T 25C312
    Text: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET PHT11N06T GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the


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    PDF PHT11N06T OT223 OT223. lg ipm PHT11N06T 25C312

    LD25C

    Abstract: BUK456 BUK456-800A BUK456-800B T0220AB
    Text: N AUER P H I L I P S / D I S C R E T E b'lE D • bbS3131 □D3DfccIQ 4 1 7 W A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF bbS3131 30bRQ BUK456-800A/B T0220AB BUK456 -800A -800B LD25C BUK456-800A BUK456-800B

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors PHX4N40E Avalanche energy rated_ FEATURES • • • • • SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics


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    PDF PHX4N40E OT186A PHX4N40E

    BUK454-500B

    Abstract: BUK454 BUK454-500A T0220AB
    Text: Philips Components BUK454-500A BUK454-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    PDF BUK454-500A BUK454-500B BUK454 -500A -500B T0220AB M89-1160/RC BUK454-500B BUK454-500A

    PHF14NQ20T

    Abstract: PHX14NQ20T
    Text: Product specification Philips Semiconductors N-channel TrenchMOS transistor PHX14NQ20T , PHF14NQ20T SYMBOL FEATURES QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching V DSS = 2 0 0 V lD = 7 .6 A ^ ds on — 2 3 0 m£2


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    PDF PHX14NQ20T, PHF14NQ20T PHX14NQ20T OT186A OT186 OT186 O-220 OT186; PHF14NQ20T

    BSH201

    Abstract: PHP222
    Text: Product specification Philips Semiconductors P-channel enhancement mode MOS transistor FEATURES BSH201 SYMBOL QUICK REFERENCE DATA V DS = -6 0 V • Low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package


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    PDF BSH201 BSH201 PHP222

    PHB65N06T

    Abstract: T404
    Text: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


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    PDF PHB65N06T OT404 PHB65N06T T404

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


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    PDF BUK7508-55 T0220AB -ID/100

    transistor Ip

    Abstract: BUK426-200A BUK426-200B
    Text: N AMER P H I L I P S / D I S C R E T E 2SE bbSBTBl D 0ÜSÜ5S0 5 B U K 426-200A B U K 426-200B PowerMOS transistor T -3 7 -il QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.


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    PDF BUK426-200A BUK426-200B BUK426 -200A -200B transistor Ip BUK426-200B

    BUK437-400B

    Abstract: DIODE JS.4 GS 069 LF
    Text: N ANER P H I L I P S / D I S C R E T E LTE D • bbSBSBl D030MÔD BUK437-400B PowerMOS transistor GENERAL DESCRIPTION N-chanrtel enhancement mode field-eff ect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    PDF D030MÃ BUK437-400B BUK437-400B DIODE JS.4 GS 069 LF

    a80J

    Abstract: PHB80N06LT PHP80N06LT T0220AB 600 V logic level fet
    Text: Product specification Philips Semiconductors TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • • • PHP80N06LT, PHB80N06LT QUICK REFERENCE DATA VDSS = 55 V ’Trench’ technology Very low on-state resistance Fast switching Stable off-state characteristics


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    PDF PHP80N06LT, PHB80N06LT PHP80N06LT T0220ABg T0220) a80J PHB80N06LT T0220AB 600 V logic level fet

    BSH202

    Abstract: VH29
    Text: Product specification Philips Semiconductors P-channel enhancement mode MOS transistor FEATURES BSH202 SYMBOL QUICK REFERENCE DATA VDS = -30 V • Low threshold voltage • Fast sw itching • Logic level com patible • S ubm iniature surface m ount package


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    PDF BSH202 BSH202 VH29

    PHB80N06T

    Abstract: T404
    Text: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


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    PDF PHB80N06T OT404 PHB80N06T T404

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION BUK454-200A/B QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for use in surface mount applications. The device is intended for use in


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    PDF BUK454-200A/B T0220AB

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors N-channel TrenchMOS transistor FEATURES • • • • IRF540, IRF540S SYMBOL ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance QUICK REFERENCE DATA d I / ^ ¡7 dss - 100 V


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    PDF IRF540, IRF540S IRF540 T0220AB) IRF540S

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors N-channel TrenchMOS transistor SYMBOL FEATURES • • • • PHP20NQ20T, PHB20NQ20T QUICK REFERENCE DATA ’Trench’ technology Very low on-state resistance Fast switching Low thermal resistance V dss — 2 0 0 V


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    PDF PHP20NQ20T, PHB20NQ20T PHP20NQ20T T0220AB) PHB20NQ20T OT404

    smd transistor 24 sot23

    Abstract: BSH203 SC18
    Text: Product specification Philips Semiconductors P-channel enhancement mode MOS transistor FEATURES BSH203 SYMBOL QUICK REFERENCE DATA s • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package lD = -0.47 A


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    PDF BSH203 BSH203 smd transistor 24 sot23 SC18

    PHT6N06T

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the


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    PDF PHT6N06T OT223 OT223. PHT6N06T