LDMOS Search Results

LDMOS Result Highlights (5)

Part	Manufacturer	Description
BLA1011-2	Rochester Electronics LLC	BLA1011-2 - N-Channel LDMOS Avionics LDMOS Transistor (Ampleon Die)
BLA1011-10	Rochester Electronics LLC	BLA1011-10 - N-Channel LDMOS Avionics LDMOS Transistor (Ampleon Die)
BLA0912-250	Rochester Electronics LLC	BLA0912-250 - N-Channel LDMOS Avionics LDMOS Transistor (Ampleon Die)
BLF1043	Rochester Electronics LLC	BLF1043 - UHF10W Power LDMOS Transistor (Ampleon Die)
BLF1046	Rochester Electronics LLC	BLF1046 - UHF Power LDMOS Transistor (Ampleon Die)

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Nexperia BSS84,215 MOSFETs SOT23 P CHAN 50V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	BSS84,215	Reel	726,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.0288	Buy Now

LDMOS Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
LDMOS Technology for RF Power Amplifiers		NXP Semiconductors	LDMOS technology for RF power amplifiers		Original	PDF
LDMOS Transistors in Power Microwave Applications		NXP Semiconductors	LDMOS Transistors in Power Microwave Applications		Original	PDF

LDMOS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TB6613FTG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB6613FTG DC and Stepping Motor Driver The TB6613FTG is a DC motor driver IC using LDMOS output transistors with low ON-resistance. The TB6613FTG incorporates five PWM constant-current H-bridge drivers, of which four drivers can be used for micro	Original	PDF	TB6613FTG TB6613FTG
AGR19045XF Abstract: No abstract text available Text: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19045EF Hz--1990 AGR19045XF
TH 2190 HOT Transistor Abstract: No abstract text available Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21180EF TH 2190 HOT Transistor
Untitled Abstract: No abstract text available Text: BLF8G20LS-210V; BLF8G20LS-210GV Power LDMOS transistor Rev. 1 — 25 February 2014 Objective data sheet 1. Product profile 1.1 General description 210 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1990 MHz.	Original	PDF	BLF8G20LS-210V; BLF8G20LS-210GV BLF8G20LS-210V 20LS-210GV
C570X7R1H106KT000N Abstract: 771-BLF642112 SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 blf642 C570x Text: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent	Original	PDF	BLF642 771-BLF642112 BLF642 C570X7R1H106KT000N SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 C570x
BTS 132 SMD Abstract: No abstract text available Text: PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package	Original	PDF	PD57002-E PowerSO-10 BTS 132 SMD
p281 Abstract: P28-1 TRANSISTOR P281 Text: polyfet rf devices P281 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base	Original	PDF
AGR18125EF Abstract: AGR18125E AGR18125EU AGR18125XF AGR18125XU JESD22-C101A Text: Product Brief April 2004 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor	Original	PDF	AGR18125E AGR18125E PB04-078RFPP PB04-012RFPP) AGR18125EF AGR18125EU AGR18125XF AGR18125XU JESD22-C101A
F2246 Abstract: No abstract text available Text: polyfet rf devices F2246 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base	Original	PDF	F2246 F2246
RF35 Abstract: No abstract text available Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 — 4 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	PDF	BLF6G27-10; BLF6G27-10G ACPR885k ACPR1980k BLF6G27-10 BLF6G27-10G RF35
PRF134 Abstract: No abstract text available Text: polyfet rf devices PRF134 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,	Original	PDF	PRF134 PRF134
F2211 Abstract: No abstract text available Text: polyfet rf devices F2211 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base	Original	PDF	F2211 F2211
960-1215 MHz transistor 20W Abstract: CAPACITOR 33PF electrolytic capacitor, .1uF 470uf, 35v electrolytic capacitor capacitor 470uf/63v 0912LD20 ADG419 capacitor 226 20V 47pf 55QT Text: 0912LD20 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET CASE OUTLINE 55QT Common Source GENERAL DESCRIPTION The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.	Original	PDF	0912LD20 0912LD20 20Wpk 960-1215 MHz transistor 20W CAPACITOR 33PF electrolytic capacitor, .1uF 470uf, 35v electrolytic capacitor capacitor 470uf/63v ADG419 capacitor 226 20V 47pf 55QT
BLF6G22-180PN Abstract: No abstract text available Text: BLF6G22-180PN Power LDMOS transistor Rev. 02 — 23 April 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.	Original	PDF	BLF6G22-180PN BLF6G22-180PN

BLS6G2731-120 Abstract: No abstract text available Text: BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1.	Original	PDF	BLS6G2731-120; BLS6G2731S-120 BLS6G2731-120 6G2731S-120
BLA1011-10 Abstract: 200B Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 FEATURES PINNING - SOT467C • High power gain	Original	PDF	M3D381 BLA1011-10 OT467C SCA75 R77/05/pp9 BLA1011-10 200B
SOT539A Abstract: SOT975B SOT540A SOT538A sot538b sot988 SOT608B Text: Air-cavity plastic packages SOT987B SOT895A Bias/temperature sensing SOT981A SOT988B SOT896B Bias/temperature sensing SOT986B Push-pull conﬁguration SOT982A MMIC conﬁguration SOT980A SOT1015BG Bias/temperature sensing Increase the ﬂexibility of application-speciﬁc design by using LDMOS RF power	Original	PDF	OT987B OT895A OT981A OT988B OT896B OT986B OT982A OT980A OT1015BG OT538A SOT539A SOT975B SOT540A SOT538A sot538b sot988 SOT608B
BLF3G22-30 Abstract: C3225X7R1H155M TEKELEC Text: BLF3G22-30 UHF power LDMOS transistor Rev. 01 — 21 June 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz Table 1. Typical class-AB RF performance	Original	PDF	BLF3G22-30 BLF3G22-30 C3225X7R1H155M TEKELEC
transistor d 1302 Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	PDF	BLS6G2933S-130 BLS6G2933S-130 transistor d 1302 smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
BLS6G3135S-120 Abstract: BLS6G3135-120 Text: BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 02 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance	Original	PDF	BLS6G3135-120; BLS6G3135S-120 BLS6G3135-120 6G3135S-120 BLS6G3135S-120
6603 Shenzhen Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor Text: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19045E Hz--1990 AGR19045E DS04-077RFPP DS02-378RFPP) 6603 Shenzhen AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor
J593 Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157 Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030E AGR21030E AGR21030EU AGR21030EF DS04-163RFPP DS04-065RFPP) J593 AGR21030EF AGR21030EU JESD22-C101A J157
AGERE Abstract: AGR21045F AGR21045U AGR26045E AGR26045EF AGR26045EU AGR26045XF AGR26045XU JESD22-C101A Text: Preliminary Product Brief April 2004 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications	Original	PDF	AGR26045E AGR26045E AGR26045EU AGR26045EF PB04-080RFPP PB04-022RFPP) AGERE AGR21045F AGR21045U AGR26045EF AGR26045EU AGR26045XF AGR26045XU JESD22-C101A
F2248 Abstract: No abstract text available Text: polyfet rf devices F2248 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base	Original	PDF	F2248 F2248

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LDMOS Search Results

LDMOS Result Highlights (5)

LDMOS Price and Stock

Nexperia BSS84,215

LDMOS Datasheets (2)

LDMOS Datasheets Context Search

Untitled

AGR19045XF

TH 2190 HOT Transistor

Untitled

C570X7R1H106KT000N

BTS 132 SMD

p281

AGR18125EF

F2246

RF35

PRF134

F2211

960-1215 MHz transistor 20W

BLF6G22-180PN

BLS6G2731-120

BLA1011-10

SOT539A

BLF3G22-30

transistor d 1302

BLS6G3135S-120

6603 Shenzhen

J593

AGERE

F2248