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    onsemi LED56

    EMITTER IR 940NM 100MA TO-46
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    DigiKey LED56 Bulk
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    Rochester Electronics LLC LED56F

    EMIT INFRARED 940NM 100MA TO46-2
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    DigiKey LED56F Bulk 485
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    onsemi LED56F

    EMITTER IR 940NM 100MA TO-46
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    Advanced Photonix SLED-56-16639

    LED IR SIDE EMITTER 940NM CLEAR
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    DigiKey SLED-56-16639 Bulk 3,250
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    General Electric Company LED56

    INFRARED LED, 1-ELEMENT, 940NM
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    Quest Components LED56 49
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    LED56 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LED56 Fairchild Semiconductor GaAs INFRARED EMITTING DIODE Original PDF
    LED56 Fairchild Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Infrared Emitting Diodes 1.50 MW, 1.7 VF Max Scan PDF
    LED56 General Electric Semiconductor Data Handbook 1977 Scan PDF
    LED56 QT Optoelectronics Gallium Arsenide Infrared - Emitting Diode Scan PDF
    LED56 QT Optoelectronics GAAS INFRARED EMITTING DIODE Scan PDF
    LED56BF General Electric Semiconductor Data Handbook 1977 Scan PDF
    LED56CF General Electric Semiconductor Data Handbook 1977 Scan PDF
    LED56F Fairchild Semiconductor GaAs INFRARED EMITTING DIODE Original PDF
    LED56F Fairchild Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Infrared Emitting Diodes 1.50 mW, 1.7 VF Max Scan PDF
    LED56F General Electric Semiconductor Data Handbook 1977 Scan PDF
    LED56F QT Optoelectronics GAAS INFRARED EMITTIN DIODE Scan PDF
    LED56F QT Optoelectronics Gallium Arsenide Infrared - Emitting Diode Scan PDF

    LED56 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LED565-66-60

    Abstract: No abstract text available
    Text: LED565-66-60 TECHNICAL DATA High Power LED Array, 60 chips GaP LED565-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency GaP diode chips, mounted on a metal stem TO-66 with AIN ceramics and covered with double coated clear silicone and epoxy resin.


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    PDF LED565-66-60 LED565-66-60 Vol10

    LED56F

    Abstract: Infrared phototransistor TO18
    Text: GaAs INFRARED EMITTING DIODE LED55BF LED55CF LED56F PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.155 (3.94) MAX 1.00 (25.4) MIN ANODE (CASE) SCHEMATIC 0.100 (2.54) 0.050 (1.27) 1 0.040 (1.02) ANODE (Connected To Case) 3 3 Ø0.020 (0.51) 2X


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    PDF LED55BF LED55CF LED56F LED55BF/LED55CF/LED56F 940nm LED55CF LED55CFB LED56F Infrared phototransistor TO18

    LED55B

    Abstract: LED55C LED56
    Text: GaAs INFRARED EMITTING DIODE LED55B LED55C LED56 PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) SCHEMATIC 1 3 0.040 (1.02) Ø0.020 (0.51) 2X 0.040 (1.02) 45° ANODE (Connected


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    PDF LED55B LED55C LED56 LED55B/LED55C/LED56 LED55CB LED55C LED55B LED56

    LED55C

    Abstract: LED55B LED56 fairchild make INFRARED EMITTING DIODE TO18 INFRARED EMITTING DIODE TO18 LED55B/LED55C/LED56
    Text: GaAs INFRARED EMITTING DIODE LED55B LED55C LED56 PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) SCHEMATIC 1 3 0.040 (1.02) Ø0.020 (0.51) 2X 0.040 (1.02) 45° ANODE (Connected


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    PDF LED55B LED55C LED56 LED55B/LED55C/LED56 DS300312 LED55C LED55B LED56 fairchild make INFRARED EMITTING DIODE TO18 INFRARED EMITTING DIODE TO18

    LED56F

    Abstract: fairchild make INFRARED EMITTING DIODE TO18 LED55BF LED55CF
    Text: GaAs INFRARED EMITTING DIODE LED55BF LED55CF LED56F PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.155 (3.94) MAX 1.00 (25.4) MIN ANODE (CASE) SCHEMATIC 0.100 (2.54) 0.050 (1.27) 1 0.040 (1.02) ANODE (Connected To Case) 3 3 Ø0.020 (0.51) 2X


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    PDF LED55BF LED55CF LED56F LED55BF/LED55CF/LED56F 940nm DS300313 LED56F fairchild make INFRARED EMITTING DIODE TO18 LED55BF LED55CF

    Untitled

    Abstract: No abstract text available
    Text: LED565/660-04A TECHNICAL DATA Dual LED, 5 mm package GaP, DDH AlGaAs LED565/660-04A is a bi-color LED, containing a GaP 565 nm and DDH AlGaAs (660 nm) LED chip die, which are mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a power radiation of typical 0.2 mW and 4.0 mW at peak wavelengths of


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    PDF LED565/660-04A LED565/660-04A

    LED55B

    Abstract: LED55C LED56 Infrared phototransistor TO18
    Text: GaAs INFRARED EMITTING DIODE LED55B LED55C LED56 PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) SCHEMATIC 1 3 0.040 (1.02) Ø0.020 (0.51) 2X 0.040 (1.02) 45° ANODE (Connected


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    PDF LED55B LED55C LED56 LED55B/LED55C/LED56 LED55C LED55CB LED55B LED56 Infrared phototransistor TO18

    L14F1 PHOTOTRANSISTOR

    Abstract: 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAG E NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M E T E R S TYP. n. SEC. TY P. n. SEC . mW


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    PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 PHOTOTRANSISTOR 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1

    ST1604

    Abstract: LED55B LED56 MA171 st1332 LED55C
    Text: so GaAs INFRARED EMITTING DIODE OPTOELECTRONICS LED55B/C, LED56 PACKAGE DIMENSIONS DESCRIPTION The LED55B/C and LED56 are 940nm LEDs in a narrow angle, TO-46 package. S E A T IN G FEATURES ST1332 SYM BOL IN C H E S MIN. A MAX. M ILL IM E T E R S MIN. .255


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    PDF LED55B/C, LED56 ST1332 LED55B/C LED56 940nm LED55B 100mA" LED55C ST1604 MA171 st1332

    Untitled

    Abstract: No abstract text available
    Text: 3875081 G E SO LID 0 1E STATE D 19656 Optoelectronic Specifications_ H A RR IS S E M I C O N D S E C T O R T 37E D B 4 3 02 27 1 0027116 1 -4 I- I HAS Infrared Emitter LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F " Gallium Arsenide Infrared-Emitting Diode


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    PDF LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F LED55B-LED55C-LED56 LED55C LED56

    M0C3022

    Abstract: M0C3021 M0C3023 H22L BPW 56 photo H11FI H74AI H11M4 21ab H2482
    Text: Quick-Reference Product Guide Selection Charts INFRARED EMITTERS TYPE NO. y & 54A S Ä j f # / 54 / JV V / jL & s /s s /^ s ^ 1 N 6 26 4 1N 6 26 S 1 N6266 CQ X 1 4 CQ X1 5 CQX16 CQ X1 7 FSD1 FSD 2 FSD3 F5E1 FSE2 F5E3 F5F1 F5G1 IE D 5 5 C L ED S5 B LED56 L ED SSC F


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    PDF N6266 CQX16 LED56 LED56F H23A1 H23A2 H23B1 H23L1 M0C3022 M0C3021 M0C3023 H22L BPW 56 photo H11FI H74AI H11M4 21ab H2482

    LED56F

    Abstract: phototransistor 940nm
    Text: G aA s INFRARED EMITTING DIODE DPTOELECÏBOIIICS LED55BF/CF, LED56F PACKAGE DIMENSIONS DESCRIPTION The LED55BF/CF and LED56F are 940nm LEDs in a wide angle, TO-46 package. SEATING 3 FEATURES Good optical to mechanical alignment SYMBOL INCHES MIN. A MILLIMFTERS


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    PDF LED55BF/CF, LED56F LED55BF/CF LED56F 940nm ST1604 phototransistor 940nm

    OF LED 55B

    Abstract: LED55B LED55C LED56 LED56F 55BF ge 55b NMTC LED55BF LED55CF
    Text: Optoelectronic Specifications Infrared Emitter LED55B, LED55C,LED56, LED55BF, LED55CF, LED56F Gallium Arsenide Infrared-Em itting Diode The GE Solid State LED55B-LED55C-LED56 Series are gallium arsenide, light em itting diodes which emit non-coherent, infrared energy with a peak wave length of


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    PDF LED55B, LED55C LED56, LED55BF, LED55CF, LED56F LED55B-LED55C-LED56 LED56 OF LED 55B LED55B LED56F 55BF ge 55b NMTC LED55BF LED55CF

    2N5777

    Abstract: L14G2 application note 2N5778 2N5779 2N5780 l14h4 L9B sot photo transistor 2n5777 H11A2 H11A3
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


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    PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2N5777 L14G2 application note 2N5778 2N5779 2N5780 l14h4 L9B sot photo transistor 2n5777 H11A2 H11A3

    LED56F

    Abstract: LED55BF LED55CF ST1331
    Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS LED55BF/CF, LED56F PACKAGE DIMENSIONS DESCRIPTION The LED55BF/CF and LED56F are 940nm LEDs in a wide angle, TO-46 package. SEATING FEATURES ST1331 • Good optical to mechanical alignment SYMBOL INCHES MIN. A MILLIMETERS


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    PDF LED55BF/CF, LED56F ST1331 LED55BF/CF LED56F 940nm LED55BF LED55CF 100mA ST1331

    photo transistor 2n5777

    Abstract: L14F1 npn photo transistor 2N5777 h11 bulb 2n5777 l14f1 2N5778 2 leads photo transistor 2n5777 photo transistor 2n5778 2N5777-80 photo transistor L14F1
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F FALL RISE M AX. M IN . M A X . PEAK EM ISSION W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M ETER S TYP. n. SEC. T Y P . n. SEC. mW 5.4mW


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    PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 photo transistor 2n5777 L14F1 npn photo transistor 2N5777 h11 bulb 2n5777 l14f1 2N5778 2 leads photo transistor 2n5777 photo transistor 2n5778 2N5777-80 photo transistor L14F1

    st1053

    Abstract: LED55B LED56 LED55C ST105 ST1054
    Text: EU GaAs INFRARED EMITTING DIODE IFTDELEE11IM5 LED55B/C, LEP56 PACKAGE DIMENSIONS SEATING PLANE DESCRIPTION The LED55B/C and LED56 are 940nm LEDs in a narrow angie, TO-46 package. FEATURES S T 1332 * Good optical to mechanical alignment SYMBOL A 40 ¿D, 8 e,


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    PDF LED55B/C, LED56 LED55B/C 940nm theTO-18 ST1604 ST1057 ST1053 STi056 LED55B LED55C ST105 ST1054

    LED558F

    Abstract: LED558 LED55C LED56F FRO 021
    Text: Emitter Specifications LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F Infrared Emitter Gallium Arsenide Infrared Emitting Diode T h e L E D 5 5 B -L E D 5 5 C -L E D 5 6 S eries a re g a lliu m a rs e n id e , lig h t e m ittin g d io d e s w h ic h e m it n o n - c o h e r e n t, in f r a r e d e n e rg y w ith a p e a k w ave


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    PDF LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F LED558F LED558 LED55C LED56F FRO 021

    2n5777 phototransistor

    Abstract: L14F1 PHOTOTRANSISTOR 2n5779 Phototransistor L14F1 L14F1 npn photo transistor LED55B photo transistor L14F1 L14G3 phototransistor npn photo transistor H11A2
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


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    PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2n5777 phototransistor L14F1 PHOTOTRANSISTOR 2n5779 Phototransistor L14F1 L14F1 npn photo transistor photo transistor L14F1 L14G3 phototransistor npn photo transistor H11A2

    ssl55c

    Abstract: photo transistor 2n5777 2N5779 PHOTO DIODE LED55C LED56F L14F1 LED56 LED55C H74A1 LED55B
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


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    PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 ssl55c photo transistor 2n5777 2N5779 PHOTO DIODE LED55C L14F1 H74A1

    H15A1

    Abstract: H15A1 opto L14F1 npn photo transistor h15a2 L14F1 phototransistor ge H15A1 photo transistor L14F1 opto h15a2 LED56 L14F2
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


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    PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 H15A1 H15A1 opto L14F1 npn photo transistor h15a2 L14F1 phototransistor ge H15A1 photo transistor L14F1 opto h15a2 L14F2

    55BF

    Abstract: led55b LED55B-LED55C-LED56 LED55C LED56 LED56F LED 55B 55cf OF LED 55B
    Text: Emitter Specifications LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F Infrared Emitter Gallium Arsenide Infrared Emitting Diode T h e LED55B-LED55C-LED56 Series are gallium arsenide, light em itting diodes w hich em it n o n -co h eren t, in fra re d energy with a p eak wave


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    PDF LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F LED55B-LED55C-LED56 LED55C LED56 55BF led55b LED56F LED 55B 55cf OF LED 55B

    LED55B

    Abstract: LED56
    Text: [O P T*O E L E CQ TRONICS GaAs INFRARED EMITTING DIODE LED55B/C, LED56 PACKAGE DIMENSIONS DESCRIPTION The LED55B/C and LED56 are 940nm LEDs in a narrow angle, TO-46 package. S E A T IN G I I FEATURES ST1332 Good optical to mechanical alignment SYMBOL A éb


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    PDF LED55B/C, LED56 LED55B/C LED56 940nm ST1332 ST1604 MEASU100 LED55B

    2N5777 equivalent

    Abstract: transistor l14g2 L14G3 L14G1-L14G2-L14G3 l14g1 equivalent L14G2 general electric h11 bulb L14G3 equivalent L14G2 color sensitive PHOTO TRANSISTOR
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL RISE MAX. MIN. MAX. PEAK EMISSION W AVELENGTH TIME TIME Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC. mW


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    PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2N5777 equivalent transistor l14g2 L14G3 L14G1-L14G2-L14G3 l14g1 equivalent L14G2 general electric h11 bulb L14G3 equivalent color sensitive PHOTO TRANSISTOR