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    LEM LT 200-S APPLICATION Search Results

    LEM LT 200-S APPLICATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    C8231A Rochester Electronics LLC Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC Telecom Circuit, Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20 Visit Rochester Electronics LLC Buy
    MD8087/R Rochester Electronics LLC Math Coprocessor, CMOS Visit Rochester Electronics LLC Buy
    AM7992BPC Rochester Electronics LLC Manchester Encoder/Decoder, PDIP24, PLASTIC, DIP-24 Visit Rochester Electronics LLC Buy

    LEM LT 200-S APPLICATION Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Current Transducer LT 1005-S/SP18 IPN = 1000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16256 Electrical data IPN IP RM


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    1005-S/SP18 PDF

    Lem LT 300 - t

    Abstract: No abstract text available
    Text: Current transducer IPN = 4000 A Ref: ITC 4000-S For the electronic measurement of current: DC, AC, pulsed., with galvanic isolation between the primary and the secondary circuit. Features Applications Bipolar and isolated current measurement up to 6 kA Energy metering


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    4000-S 21November2011/version Lem LT 300 - t PDF

    Untitled

    Abstract: No abstract text available
    Text: Current Transducer LT 505-T/SP12 IPN = 800 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16158 Electrical data IPN IP RM


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    505-T/SP12 PDF

    10000-S

    Abstract: No abstract text available
    Text: Current Transducer LT 10000-S IPN = 10000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current


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    10000-S 10000-S PDF

    lem current lt 100

    Abstract: lem lt 100 LEM LT 200-S Lem LT 200 Hall Effect Current Measurements 10000-S
    Text: Current Transducer LT 10000-S IPN = 10000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current


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    10000-S lem current lt 100 lem lt 100 LEM LT 200-S Lem LT 200 Hall Effect Current Measurements 10000-S PDF

    LEM Components

    Abstract: No abstract text available
    Text: Current Transducer LT 10000-S IPN = 10000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current


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    10000-S LEM Components PDF

    Untitled

    Abstract: No abstract text available
    Text: Current Transducer LT 1005-S/SP1 IPN = 1000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current


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    1005-S/SP1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Current Transducer LT 1005-S/SP30 IPN = 1000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current


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    1005-S/SP30 PDF

    Untitled

    Abstract: No abstract text available
    Text: Current Transducer LT 1005-S/SP28 IPN = 1000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16135 Electrical data IPN IP RM


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    1005-S/SP28 PDF

    LVDT strain gauge displacement transducer

    Abstract: lvdt datasheet lvdt lvdt sensor DS400A stainless steel aisi 446 properties Daytronic Bendix Connector Type PTO2E-10-6P BENDIX PT1H-10-6p DAYTRON
    Text: For fast, reliable measurement of electromechanical phenomena Transducers TRANSDUCERS CATALOG TC-7 LVDT'S TRANSDUCERS LOAD CELLS TRANSDUCERS PRESSURE OTHER TRANSDUCERS FOR FAST, RELIABLE MEASUREMENT OF ELECTROMECHANICAL PHENOMENA Copyright 2001, Daytronic Corporation. All rights reserved.


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    20-pitch, 30-tooth 100-k LVDT strain gauge displacement transducer lvdt datasheet lvdt lvdt sensor DS400A stainless steel aisi 446 properties Daytronic Bendix Connector Type PTO2E-10-6P BENDIX PT1H-10-6p DAYTRON PDF

    LTSR 6-NP

    Abstract: LTSR 25-NP ch-1228 nanalem lem lt 100 p LTS 25-NP hall current transducer lts 6-np LEM hall effect sensor voltage offset cancellation LTSR 15-NP LA 25-NP
    Text: Technical Information LTSR: ASIC Based Closed-Loop Transducers from 6 A up to 25 A nominal with reference access LTSR: ASIC Based Closed-Loop Transducers from 6 A up to 25 A nominal with reference access. By Stéphane Rollier, Christophe Benz & Hans Dieter Huber.


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    25-NP c4-0021 ROC-10483 CH-1228 LTSR 6-NP LTSR 25-NP nanalem lem lt 100 p LTS 25-NP hall current transducer lts 6-np LEM hall effect sensor voltage offset cancellation LTSR 15-NP LA 25-NP PDF

    BP107

    Abstract: C380 C380MX500
    Text: POWEREX f O "ÖS IN C M E K H m T| 7214b51 C380 Í P o w e rex , Inc. W ills S treet, Y oungw ood, P enn sylvan ia 15697 412 9 2 5 -7 2 7 2 P o w e re x E urope, S.A., 42 8 A ve. G. D urand, BP107, 72003 LeM ans, F ra n c e (4 3 ) 72.75,15 0002^54 X500 a


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    7214b51 T-25-19 BP107, BP107 C380 C380MX500 PDF

    lem lt 100 p

    Abstract: N24-N2 Lem LT 80 p lem current lt 100 LG jtag
    Text: P R E L IM IN A R Y D A T A S H E E T M it s u b is h i < d ig it a l a s s p > M66244FP June 1998 Ver.8.0.0 High Speed Monolithic Pulse Width Modulator NO TE:This is not final specification. Some parametric limits are subject to change DESCRIPTION The M66244FP is a high-speed digitally programmable pulse width modulator PWM which


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    M66244FP M66244FP 72MHz. 45MHz 72MHz lem lt 100 p N24-N2 Lem LT 80 p lem current lt 100 LG jtag PDF

    thyristors 5000 volt 3000 amperes

    Abstract: Lem LT 300 - t CODE 1AM powerex T9G T9G0 Lem LT 300
    Text: P0U1EREX INC m u o D5 a x DE 1 7 5 c14bEl QD03DSb S _ T - 2 S *2 tf T9G0 Pow erex, Inc. Hlllls Street, Youngwood, Pennsylvania 15897 412 925 -7 2 7 2 Phase Control SCR P o w e re x Europe, S.A., 4 28 Ave. Q. Durand, BP107, 72003 LeM ana, France (43 ) 72.75.1S


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    14bEl QD03DSb BP107, Amperes/2400-4000 AX/10 thyristors 5000 volt 3000 amperes Lem LT 300 - t CODE 1AM powerex T9G T9G0 Lem LT 300 PDF

    Untitled

    Abstract: No abstract text available
    Text: P R E U M tfM A R Y D A T A S H E E T M it s u b is h i < d ig it a l a s s p > M66244FP June 1998 Ver.8.0.0 High Speed M onolithic Pulse W idth Modulator NOTE:This is not final specification. Some parametric limits are subject to change DESCRIPTION The M66244FP is a high-speed digitally programmable pulse width modulator PWM which


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    M66244FP M66244FP 72MHz. 45MHz 72MHz 16bit) D02b411 PDF

    ANA 618

    Abstract: IC ANA 618 IN4453 Lem LT 300 - t
    Text: IN4156, IN4157, IN4453, IN4829, IN4830, IN5179 STABISTORS Mierosemi Corp. ' The diode experts SANTA ANA , CA Also, Tight Tolerance SCOTTSDALE, AZ MPD100 thru MPD400A or MZ2360 and MZ2361 For more inform ation call: 602 941-6300 PACKAGE DIMENSIONS APPLICATION


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    IN4156, IN4157, IN4453, IN4829, IN4830, IN5179 MPD100 MPD400A MZ2360 MZ2361 ANA 618 IC ANA 618 IN4453 Lem LT 300 - t PDF

    651 lem

    Abstract: No abstract text available
    Text: Ordering number : EN5439 Monolithic Digital 1C LB1921 No. 5439 SA\YO Three-Phase Brushless Motor Driver for OA Applications Overview Package Dimensions T h e L B 1 9 2 1 is a s in g le -c h ip m o to r d riv e r c ir c u it th a t unit: mm pro v id es d irect P W M drive o u tp u t ap p ro p ria te for driv in g


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    EN5439 LB1921 147A-DIP28HS 651 lem PDF

    Untitled

    Abstract: No abstract text available
    Text: SCRs AD100-AD104 AD107-AD111 AD114-AD118 1.6 Amp, Planar FEATURES • Maximum Gate Trigger Current: 2, 20 or 2CKVA • T ig h t Gate Trigger Voltage Range: .44 to .6V • Voltage Ratings: to 400V • Specified fo r d v /d t and S w itchin g Time DESCRIPTION


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    AD100-AD104 AD107-AD111 AD114-AD118 AD100 AD107 200pA AD114 AD100 CD03QG1 PDF

    2sd1020

    Abstract: 2SB810
    Text: NPN SILICON TRANSISTOR 2SD1020 D E S C R IP T IO N The 2 S D 1 0 2 0 is designed fo r use in o u tp u t stage o f portable R A D IO and cassette ty p e tape recorder, general purpose applications. FEATURES • High to ta l pow er dissipation. PT = 3 5 0 m W


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    2SD1020 2SD1020 50/iA 2SB810 PDF

    Lem LT 80 p

    Abstract: G5853-01 G5852-01 .25x10 12x101
    Text: InGaAs-PIN Photodiodes Long•wavelength Enhanced Types Spectral response extending to the long wavelength range C om pared to standard type devices w ith a c u t-o ff w avelength o f 1.7 Jim, these devices o ffer longer c u to ff w avelengths o f 1.9 (Jin, 2.1 ^m ,


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    KIRDB0107EA KIRDB0106EA KIR060108EA KIRD80109EA Lem LT 80 p G5853-01 G5852-01 .25x10 12x101 PDF

    Untitled

    Abstract: No abstract text available
    Text: Die angegebenen Verpackungseinheiten VE gelten als Mindestabnahmemenge bei Lieferung ab Werk. The package units (VE) being stated are automatically the lowest possible quantities being available ex works. Les livraisons d’usines ne peuvent être inférieures aux unités d ’emballage


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    5bl5235 DD01134 PDF

    lem lt 100 p

    Abstract: P791-01
    Text: PbSe Photoconductive Detectors Capable of detecting to 5 pm range TE-cooled types • High-speed response • Operates at room temperature Com pared to other types o f detectors used in the same wavelength range, PbSe cells have higher response speed and can also operate at


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    KIRDB0054EA KIRDB0056EA P3207-04) 650nm KIRDB0057EA lem lt 100 p P791-01 PDF

    ERC20

    Abstract: ERC20-02 T151 T760 T0220A
    Text: E R C 2 5 A FAST RECOVERY DIODE • 4# ^ : Features High voltage by mesa design. • « fia t* High reliability Connection Diagram : Applications • M & X 'f- y T *? High speed switching. Maximum Ratings and Characteristics : Absolute Maximum Ratings Items


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    ERC20 T0-220AB SC-46 wjjMasII15 E3TS30S3^ l95t/R89 ERC20-02 T151 T760 T0220A PDF

    2N5724

    Abstract: 2N5724-2N5728 2N3724 2N5725 2N5726 2N5727 2N5728
    Text: SCRs 2N5724-2N5728 1.6 Amp, Planar FEATURES DESCRIPTION • M axim um Gate Trigger Current: 20mA • C lose ly Controlled Gate Trigger Voltage; .44 to .sv • O perating Current Range: 2m A to 1.6A • Voltage Ratings: to 400V • Low On-State Voltage • Specified for dv/dt and S w itch in g Tim e


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    2N5724-2N5728 20/iA 2N5724 2N3724 2N5725 2N5726 2N5727 2N5728 PDF