lem lt 2000
Abstract: M66244FP
Text: PRELIMINARY DATA SHEET MITSUBISHI <DIGITAL ASSP> M66244FP June 1998 Ver.8.0.0 High Speed Monolithic Pulse Width Modulator NOTE:This is not final specification. Some parametric limits are subject to change DESCRIPTION The M66244FP is a high-speed digitally programmable pulse width modulator PWM which
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M66244FP
M66244FP
72MHz.
45MHz
72MHz
16bit)
11bit)
lem lt 2000
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lem current lt 100
Abstract: lem current lt 2005-s lem lt 2000 LEM LT 2005-s LEM Components SMPS IC 2005
Text: Current Transducer LT 2005-S IPN = 2000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current
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2005-S
lem current lt 100
lem current lt 2005-s
lem lt 2000
LEM LT 2005-s
LEM Components
SMPS IC 2005
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LT308-S7
Abstract: LEM LT 308 S7 Lem LT 300 - t Lem LT 300 308-S7 LEM LT 308 lem lt 2000 LT308-S
Text: 电 流 传 感 器 LT 308-S7 IPN = 原边和副边之间是绝缘的 ，用于测量直流 300 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流， 测量范围 测量电阻 @ IPN IP RM with ± 12 V with ± 15 V 精度
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308-S7
94-V0
LT308-S7
LT308-S7
LEM LT 308 S7
Lem LT 300 - t
Lem LT 300
308-S7
LEM LT 308
lem lt 2000
LT308-S
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LEM LT 308
Abstract: Lem LT 300 LT308-T7 Lem LT 500 t7 308
Text: 电流传感器 LT 308-T7 IPN = 原边和副边之间是绝缘的，用于测量直流 300 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流， 测量范围 测量电阻 @ IPN IP RM with ± 12 V with ± 15 V 精度 L • 应用霍尔原理的闭环（补偿）电流传感
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308-T7
94-V0
LT308-T7
LEM LT 308
Lem LT 300
LT308-T7
Lem LT 500
t7 308
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Lem LT 300
Abstract: LT308-S6 308-S6 LEM LT 308 LT308-S
Text: 电流传感器 LT 308-S6 原边和副边之间是绝缘的，用于测量直流 IPN = 300 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流， 测量范围 测量电阻 @ IPN IP RM 300 0 . ± 500 with ± 18 V 精度
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308-S6
94-V0
LT308-S6
Lem LT 300
LT308-S6
308-S6
LEM LT 308
LT308-S
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LTSR 6-NP
Abstract: LTSR 25-NP ch-1228 nanalem lem lt 100 p LTS 25-NP hall current transducer lts 6-np LEM hall effect sensor voltage offset cancellation LTSR 15-NP LA 25-NP
Text: Technical Information LTSR: ASIC Based Closed-Loop Transducers from 6 A up to 25 A nominal with reference access LTSR: ASIC Based Closed-Loop Transducers from 6 A up to 25 A nominal with reference access. By Stéphane Rollier, Christophe Benz & Hans Dieter Huber.
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25-NP
c4-0021
ROC-10483
CH-1228
LTSR 6-NP
LTSR 25-NP
nanalem
lem lt 100 p
LTS 25-NP
hall current transducer lts 6-np
LEM hall effect sensor voltage offset cancellation
LTSR 15-NP
LA 25-NP
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LT208-S7
Abstract: Lem LT 200 Lem LT 300 - t LT208 Lem LT 300 208-S7 Lem LT 500 Lem LT 208
Text: 电 流 传 感 器 LT 208-S7 IPN = 原边和副边之间是绝缘的 ，用于测量直流 200 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流， 测量范围 测量电阻 @ IPN IP RM with ± 12 V with ± 15 V 精度
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208-S7
94-V0
kHz00
LT208-S7
LT208-S7
Lem LT 200
Lem LT 300 - t
LT208
Lem LT 300
208-S7
Lem LT 500
Lem LT 208
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Untitled
Abstract: No abstract text available
Text: P R E U M tfM A R Y D A T A S H E E T M it s u b is h i < d ig it a l a s s p > M66244FP June 1998 Ver.8.0.0 High Speed M onolithic Pulse W idth Modulator NOTE:This is not final specification. Some parametric limits are subject to change DESCRIPTION The M66244FP is a high-speed digitally programmable pulse width modulator PWM which
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M66244FP
M66244FP
72MHz.
45MHz
72MHz
16bit)
D02b411
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thyristors 5000 volt 3000 amperes
Abstract: Lem LT 300 - t CODE 1AM powerex T9G T9G0 Lem LT 300
Text: P0U1EREX INC m u o D5 a x DE 1 7 5 c14bEl QD03DSb S _ T - 2 S *2 tf T9G0 Pow erex, Inc. Hlllls Street, Youngwood, Pennsylvania 15897 412 925 -7 2 7 2 Phase Control SCR P o w e re x Europe, S.A., 4 28 Ave. Q. Durand, BP107, 72003 LeM ana, France (43 ) 72.75.1S
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14bEl
QD03DSb
BP107,
Amperes/2400-4000
AX/10
thyristors 5000 volt 3000 amperes
Lem LT 300 - t
CODE 1AM
powerex T9G
T9G0
Lem LT 300
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Lem LT 300 - t
Abstract: noble 15am
Text: I Multi-Section Potentiometer for Car-Audio XVB93 Series 7 .0 5 s p z c iw c & T io m 15 •íotalfiotalinnalJUigíB:- 300 ± 5 ° S in gle -E le m e nt Single S h a ft Type : 2 to 15 m N m :Bofafionaf:t-orque:- D ual-S haft lnner T ype : 2 to 15 mN m
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XVB93
100kQ
AC50V,
DC10V
Lem LT 300 - t
noble 15am
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Lem LT 300 - t
Abstract: NDL5200 L5104
Text: N E C h2E D ELECTRONICS INC • b427525 0030074 22T M N E C E PRELIMINARY DATA SHEET NEC PHOTO DIODE NDL5103P, NDL5103P1 ELECTRON DEVICE 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>50 G ERM AN IU M A V A LA N CH E PHOTO DIODE M O DULE DESCRIPTION NDL5103P and NDL5103P1 are Germanium Avalanche Photo Diodes with optical fiber, especially designed for detectors of
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b427525
NDL5103P,
NDL5103P1
NDL5103P
NDL5103P1
NDL5103P
NDL51Q3P1
NDL5100C
NDL5104P1
NDL5102
Lem LT 300 - t
NDL5200
L5104
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MPY16HJ
Abstract: MPY-16HJ WTL1016 weitek 1516B MSP 3140 64 bit booth multiplier trw 1016 "Pin for Pin"
Text: .-I H y.- r ^L/rrL^ 7 IN N O V A T IO N S IN M I C R O S Y S T E M T E C H N O L O G Y 0 3b j ^ f A ' WTL 1516/1516A/1516B Features Description • 16 X 16 p arallel a rra y m ultip lier T h e W T L 1516/1516A/1516B are N M O S 16 X 16 p arallel arra y, m ultipliers characterized
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1516/1516A/1516B
1516B,
100ns
1516B
MPY16HJ
Am29516
MIL-STD-883
Diagr40
1258C
WTL151
MPY-16HJ
WTL1016
weitek
1516B
MSP 3140
64 bit booth multiplier
trw 1016
"Pin for Pin"
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2322 m
Abstract: Lem LT 300 - t lem lt 100 p
Text: M odel PP- 17 Modular C o n tro l P otentio m eter SPECIFICATIONS Carbon Composition Element Cermet Element Electrical Resistance Range Linear 220 i i to 2.2 M il 220 i l to 2.2 M i N on Linear 2.2 KJ1 to 470 K ii N ot Applicable Resistance Tolerance ± 20% Standard
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10nvn
100nmi
ft88j)
2322 m
Lem LT 300 - t
lem lt 100 p
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LT8900
Abstract: itt 2222a LT89000 2203a ses cree 3535 PS-303 AD clt850 LT8600 2168A LT8500
Text: Æ | M IT - L I f 1 w II CLA80000 SERIES I Km*Ink HIGH DENSITY CMOS GATE ARRAYS SEMICONDUCTOR DS3820-2.1 July 1997 INTRODUCTION ARRAY SIZES T he C L A 8 0 k gate array se rie s from M itel S e m ico n d u cto r offers advan ta ge s in spe ed and d e n sity over previous array
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CLA80000
DS3820-2
rra635
MLA85
MLA87
MLT88
MLT89
GA84-ACA-2828
PGA100-ACA-3434
PGA120-ACA-3434
LT8900
itt 2222a
LT89000
2203a ses
cree 3535
PS-303 AD
clt850
LT8600
2168A
LT8500
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Untitled
Abstract: No abstract text available
Text: HOLTEK rnr^ HT48CA0 8-bit Microcontroller Features • • • • • • • • • • O p e ra tin g voltage: 2.2V~3.6V T en b id ire ctio n a l I/O lines Six sc h m itt trig g e r in p u t lines O ne c a rrie r o u tp u t 1/2 or 1/3 duty O n-chip cry sta l a n d RC oscillator
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HT48CA0
14-bit
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ssi 202
Abstract: HER301 HER308 Z03E
Text: E HER301 -HER308 TAIWAN SEMICONDUC tà RoHS CO M PLIANCE 3.0 AMPS. High Efficient Rectifiers DQ.-2Q1AD .220 lÿ.lil .TTiTFiïï Dia. 1.0 2S.4 MIN. Features v •fr <> v v High efficie ncy. Low VF High current caps bilily High reliability High surgu currunl capability
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HER301
-HER308
157PF
MIL-STD-202.
ssi 202
HER308
Z03E
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2N6218
Abstract: 2N6115 2N6114 GES621I Voltaire unijunction
Text: Silicon Complementary Unijunction Transistor 2 N 6 2 1 8 -2 4 SEE G ES621I*2 COMPLEMENTARY UNIJUNCTION T he G eneral E le c tr ic C om p lem en tary U n iju n ctio n T ra n sisto r is a silicon planar, m on olith ic in teg ra ted circu it. It h as u n iju n ction c h a r a c te r istic s w ith
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2N6218-24
GES621I
2N6218
2N6115
2N6114
GES621I
Voltaire
unijunction
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Untitled
Abstract: No abstract text available
Text: IMX1 /Transistors I M X 1 7 < 7 1 / - T 7 K ^ - ;E - ^ K t / H 7 —fix/H f ^ * a lflIffl/G eneral Small Signal Amp. Isolated Mini-Mold Device • • ^. g-^->i@ /Dim ensions U n it: mm) 1) SMT (SC-59) t m — f t t H c 2 f@(7) h 7 > - > ' X 5 i ! A o Zi'&o
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SC-59)
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tube 6c4
Abstract: 6c4 tube TRIODE 6C4 TL604 I960 rs tube general electric
Text: jam 6C4 6C4 ET-T1604 Page 1 3-6 0 TRIODE TUBES DESCRIPTION A N D RAT IN G 1 BASING DIAG RAM T h e 6 C 4 is a m in ia tu re , m e d iu m -m u trio d e su ita b le fo r use in a w id e v a r ie t y o f g e n e ra l-p u rp o se a p p lica tio n s. I t is e sp e c ia lly u se fu l a s a lo ca l o scilla to r in
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K-556Il-TO104-3
K-556I
tube 6c4
6c4 tube
TRIODE 6C4
TL604
I960
rs tube
general electric
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ct-2048
Abstract: CT 2048 CD182 CCD182 Fairchild Imaging
Text: Fairchild Imaging Sensors Sensors PRELIMINARY i- o r a /v i- CCD182 2588 Element Linear Image Sensor FEATURES • 2 5 8 8 x 1 ph oto s ite array s im ila r to th e CCD181 ■ Very high sp e e d o p eration up to 6 0M H z data rate ■ V oltag e-s e le c tab le leng ths
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CCD182
CCD181
10fim
ct-2048
CT 2048
CD182
Fairchild Imaging
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Bridge Rectifier ccz
Abstract: SB25005 SB2501 SB2502 SB2504 SB2506 SB2510 E127707
Text: SB25005 THRU SB2510 25.0 AMP SILICON BRIDGE V O LTA G E RAN G E FEATURES 50 to 1000 V olts * U niversale 4~way term inals: sn a p -o n , w rap-around, CURRENT solder or P .C . board m ounting 25.0 Am peres * T h is se rie s is U L recognized under com ponent index,
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SB25005
SB2510
E127707
MIL-STD-202
secondsA375"
Bridge Rectifier ccz
SB2501
SB2502
SB2504
SB2506
SB2510
E127707
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truth table for ic 74138
Abstract: 16CUDSLR ALU IC 74183 IC 74151 diagram and truth table 74183 alu 74147 pin diagram and truth table pin diagram of IC 74184 HP-7475A 7408 ic truth table IC 74373 truth table
Text: PLCAD-SUPREME & PLS-SUPREME A+PLUS Programmable Logic Development System & Software Data Sheet September 1991, ver. 1 Features J J J J □ □ H igh-level su p p o rt for A ltera's general-purpose Classic EPLDs M ultiple design entry m ethods LogiCaps schem atic capture
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44-Mbyte,
386-based
truth table for ic 74138
16CUDSLR
ALU IC 74183
IC 74151 diagram and truth table
74183 alu
74147 pin diagram and truth table
pin diagram of IC 74184
HP-7475A
7408 ic truth table
IC 74373 truth table
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6AB4
Abstract: 6ab4 tube general electric
Text: 6AB4 6AB4 EM Cm OM íCS ET-T587C Page 1 TRIODE 12 - 6 DESCRIPTION AND RATING^ T h e 6AB4 is a m in ia tu re trio d e designed for use as a grounded-grid rad io-frequency am plifier, freq u en cy converter, or oscillator a t frequencies below a p p ro x im ately 300 m egacycles.
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ET-T587C
6AB4
6ab4 tube
general electric
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LTE Receiver
Abstract: No abstract text available
Text: CY7B4663 Integrated 10BASE-FL Ethernet Transceiver Features F unctional Description Single chip Ethern et solution C om plie s with IEEE 802.3 10BAS E-FL standard Pin com patible with the popular 4663 110 mA LED current drive capability AUI interface allows both transform er and capacitive
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CY7B4663
10BASE-FL
10BAS
LTE Receiver
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