1ss335
Abstract: W810i SCH-B380 P990i k800i nokia c5 hp ipaq power connector BT-STA2416C2 B560 transistor datasheet mobile nokia circuit diagram
Text: AN2612 Applications note How to use the BT_HTS_RX_R2 evaluation board Features ! Support A2DP/AVRCP sink side profile. ! Class 2 (max +4 dBm RF power output), BQB qualified module. ! Single 5-V DC power supply. ! 1.5-Vpp line-out (stereo) with full scale input.
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AN2612
BT-STA2416C2
1ss335
W810i
SCH-B380
P990i
k800i
nokia c5
hp ipaq power connector
BT-STA2416C2
B560 transistor datasheet
mobile nokia circuit diagram
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Q65110A2290
Abstract: A67K-G2J1-24 Osram LG A67K-H2K1-24 A67K-F1G2-25 Q65110A2294 Q65110A2293 A67K-G2K1-24
Text: Hyper SIDELED Hyper-Bright Low Current LED Lead Pb Free Product - RoHS Compliant LG A67K, LP A67K Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes SMT Gehäuse, farbloser klarer Verguss • Besonderheit des Bauteils: Abstrahlung
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Q65110A2382
Abstract: Q65110A2372 Q65110A2373 Q65110A2378 M670-H1J1-1 M670-G1H2-1 Q65110A2385 M670 M670-J2M1-1 Q65110A2381
Text: Mini TOPLED Lead Pb Free Product - RoHS Compliant LS M670, LO M670, LY M670, LG M670, LP M670 Nicht für Neuentwicklungen Not for new designs Besondere Merkmale • Gehäusetyp: weißes SMT-Gehäuse, farbloser klarer Verguss • Besonderheit des Bauteils: kleine Bauform
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Untitled
Abstract: No abstract text available
Text: Micro SIDELED Lead Pb Free Product - RoHS Compliant LG Y870 Nicht für Neuentwicklungen Not for new designs Besondere Merkmale Features • Gehäusetyp: weißes SMT-Gehäuse, farbloser klarer Verguss • Besonderheit des Bauteils: kleine Bauform mit extrem breiter Abstrahlcharakteristik; ideal
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3000/Rolle,
10000s
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Untitled
Abstract: No abstract text available
Text: GMM2739230EPTG LG Semicon Co.,Ltd. Description 8,388,608 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM MODULE Features The GMM2739230EPTG is a 8M x 72bits Synchronous Dynamic RAM MODULE which is assembled 9 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package, 2 pieces of 16 bits Register in 48 pin
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GMM2739230EPTG
72bits
2739230EPTG
GMM2739230EPTG
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CL31B
Abstract: No abstract text available
Text: _ . LG . S e m ic o n . G M M2739230ET G 8,388,6os w o r d s X72b i t SYNCHRONOUS DYNAMIC RAM MODULE C o . , L td . Description Features The GMM2739230ETG is a 8M x 72bits Synchronous Dynamic RAM MODULE which is assembled 9 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II
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M2739230ET
GMM2739230ETG
72bits
GMM2739230ETG
CL31B
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Untitled
Abstract: No abstract text available
Text: GMM27317230ATG LG Semicon Co.,Ltd. Description 16,777,216 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM MODULE Features The GMM27317230ATG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 9 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II
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GMM27317230ATG
72bits
7317230A
GMM27317230ATG
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ks philips
Abstract: BSR50 BSR51 BSR52 BSR60 BSR61 BSR62
Text: T -J 7 -2 « ? BSR60 to 62 PHILIPS I N T E R N A T I O N A L 5bE D • 7 1 1 G Û 2 b G D 4E 3 32 SST PHIN P-N-P DARLINGTON TRANSISTORS Silicon planar transistors in plastic TO -92 envelopes, intended for industrial applications e.g. print hammer, solenoid, relay and lamp driving.
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BSR60
GD4E332
BSR50,
BSR51
BSR52.
BSR61
BSR62
150ction
ks philips
BSR50
BSR52
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Untitled
Abstract: No abstract text available
Text: GMM26433233ANTG 33,554,432 WORDS x64bit SYNCHRONOUS DYNAMIC RAM MODULE LG Sem icon Co.,Ltd. Description The GMM26433233ANTG is a 32M x 64bits Synchronous Dynamic RAM MODULE which is assembled 16 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM
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x64bit
GMM26433233ANTG
GMM26433233ANTG
64bits
133/PC
100/PC66
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Untitled
Abstract: No abstract text available
Text: GMM7658287CNTG-5/6 u 8,388,608WORDS x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features * 144 pins Dual In-Line Package - GMM7658287CNTG : Gold plating * Extended Data Out EDO Mode Capability * Single Power Supply * Fast Access Time & Cycle Time ,TT .
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GMM7658287CNTG-5/6
608WORDS
GMM7658287CNTG
16bit
50pin
GMM7658287CNTG
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76s42
Abstract: No abstract text available
Text: GMM7654287CTG-5/6 u 4,194,304 WORDS x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The GMM7654287CTG is an 4M x 64 bits EDO Dynamic RAM MODULE which is assembled 4 pieces of 4M x 16bit EDO DRAMs in 50 pin TSOP ¥ - package, one 2k EEPROM for SPD in 8pin TSSOP package mounted on a 144 pin printed
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GMM7654287CTG-5/6
GMM7654287CTG
16bit
GMM7654287CTG
7654287C
55MIN
76s42
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Untitled
Abstract: No abstract text available
Text: GMM7641010CS/SG-6/7 LG Semicon Co.,Ltd. 1,048,576 W O R D S x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features T he G M M 7 6 4 1 0 1OCS/SG is an IM x 64 bits E D O D ynam ic R A M M O D U LE w hich is assem bled 4 pieces o f IM x 16bit EDO • 1 6 8 pins D ual In-L ine Package
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GMM7641010CS/SG-6/7
16bit
20pin
7641010C
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Untitled
Abstract: No abstract text available
Text: DPS8256P8 256K X 8 CMOS SRAM MODULE DESCRIPTION: The DPS8256P8-25, -35, -45, -55 is a high speed 256K x 8 Static Random Access Memory SRAM module constructed on an epoxy laminate substrate using eight 256K x 1 C M O S RAM's in plastic surface mount packages. The DPS8256P8 features separate
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DPS8256P8
DPS8256P8-25,
DPS8256P8
DPS8256P8-25
DPS8256P8-35
DPS8256P8-45
DPS8256P8-55
30A033-00
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BSP40
Abstract: BSP41 BSP42 BSP43
Text: • bbSa^ai Q025MbM 111 ■ APX N AMER PHILIPS/DISCRETE BSP40 to 43 b7E D _ SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in m iniature plastic envelopes intended fo r application in th ick and th in -film circuits. T hey are intended fo r use in telephony and general industrial applications.
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Q025MbM
BSP40
BSP41
BSP43
bb53T31
D02S4b7
100mA
BSP42
BSP43
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mm773
Abstract: No abstract text available
Text: GMM773421OCT/TG-6/7 LG Semicon Co.,Ltd. 4 ,194,304 W O R D S x 72 BIT CMOS EDO DYNAMIC RAM MODULE Description Features T he G M M 7 7 3 4 2 1QCT/TG is an 4M x 72 bits E D O D ynam ic RAM M O D U L E w hich is assem bled 18 pieces o f 4M x 4bit E D O D R A M s in 24 pin T SO P II package,
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16bit
7734210C
GMM773421OCT/TG-6/7
H5-571
mm773
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BSR52
Abstract: BSR61 BSR50 BSR51 BSR60 BSR62
Text: BSR50 to 52 J P HILIPS I N T E R N A T I O N A L SbE D • 7 1 1 00 2 b 0 0 4 E 3 2 b j?Sb M P H I N N-P-N DARLINGTON TRANSISTORS Silicon planar transistors in plastic TO-92 envelopes, intended for industrial switching applications e.g. print hammer, solenoid, relay and lamp driving.
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BSR50
711002b
004232b
BSR60,
BSR61
BSR62.
BSR51
BSR52
BSR60
BSR62
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Yamaha V6388B
Abstract: ba1514 yamaha LSI2163
Text: YAMAHA L S I VPDC • OUTLINE The versatile panel display controller (VPDC) is a high-level display controller with functions for controlling large-capacity flat panel displays (hereinafter simply “panels”) and for controlling raster-scanning C R T displays. In addition, since application software written for CRTs can
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5K-0705C
Yamaha V6388B
ba1514
yamaha
LSI2163
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Untitled
Abstract: No abstract text available
Text: GMM27316233ENTG 16,777,216 WORDS x72BIT LG Semicon Co.,Ltd. Description The GMM27316233ENTG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM in 8pin TSSOP package mounted on a 168
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GMM27316233ENTG
x72BIT
GMM27316233ENTG
72bits
27316233ENTG
133/PC
100/PC66ol
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Untitled
Abstract: No abstract text available
Text: GMM26416233ENTG 16,777,216 WORDS x64bit LG Semicon Co.,Ltd. Description The GMM26416233ENTG is a 16M x 64bits Synchronous Dynamic RAM MODULE which is assembled 16 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM in 8pin TSSOP package mounted on a 168
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GMM26416233ENTG
x64bit
GMM26416233ENTG
64bits
33/PC
100/PC66
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Untitled
Abstract: No abstract text available
Text: GMM764201QCT/TG-6/7 LG Semicon Co., Ltd. 2,097,152 W O R D S x 64 B IT CMOS EDO DYNAMIC RAM MODULE Description Features T he G M M 7642010C T /T G is an 2M x 64 bits E D O D ynam ic R A M M O D U L E w hich is assem bled 8 pieces of 1M x 16bit E D O D R A M s in 44 pin T S O P II package, one 2 0 b it
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7642010C
16bit
56pin
48pin
GMM764201QCT/TG-6/7
GMM7642010CT/TG
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Untitled
Abstract: No abstract text available
Text: GMM27333233ANTG LG Semicon Co.,Ltd. 33,554,432 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM MODULE Description The GMM27333233ANTG is a 32M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM
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GMM27333233ANTG
72bits
GMM27333233ANTG
x72BIT
133/PC
100/PC66
Compatib54
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34H 705
Abstract: No abstract text available
Text: GMM7642147CIG-6/7 LG Semicon Co., Ltd. 2 ,0 9 7 ,15 2 W O R D S x 64 B IT CMOS EDO DYNAMIC RAM MODULE Description Features T he G M M 7642147C IG is a 2M x 64 bits D ynam ic R A M M O D U L E w hich is a ssem bled 8 pieces o f 2M x 8bit D R A M s in 28p in BLP
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GMM7642147CIG-6/7
7642147C
34H 705
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sm 4500
Abstract: SD oem 3C bm 8900 0813c
Text: G01412b QQOOOSM PC BOARD MOUNT POWER SUPPLIES T T-&*1-05| mm B k- The A A K line of P C Board mount Stan d a r d S Series Includes voltages from 2 Vdc to 48 Vdc. Critical components in each model are aged, matched, pretested and graded to insure long serviceability.
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001412b
00000E4
10-Up
50-400H*
sm 4500
SD oem 3C
bm 8900
0813c
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AX425
Abstract: MAX425 dual slope adc
Text: ADVANCE INFORMATION >1/1>1X1>1/1 B ased on Evaluation o f Lim ited N um b er o f D evices C o n ta ct Factory For P roduct U pda te U ltra H igh-P recision CMOS Op Am ps Features ♦ 250nVp.p Noise 0.1 Hz to 10Hz BW ♦ ♦ ♦ ♦ ♦ 190dB Open-Loop Gain
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250nVp
425/M
AX425
MAX425
dual slope adc
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