str - z 2156
Abstract: STR 457 burndy connectors 18-23 S2GBP486A12B2 SWOH24A-5 SF3A44N866N WS90A ehps STR 456 m16 expansion bolt
Text: BURNDY Substation — Welded/EHV TABLE OF CONTENTS Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M-3 Nomogram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M-4 Gradient Calibrator . . . . . . . . . . . . . . . . . . . . . . . . . M-5
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SWT-A-A-75
SF3A44N8Q)
SF3A44N866N.
str - z 2156
STR 457
burndy connectors 18-23
S2GBP486A12B2
SWOH24A-5
SF3A44N866N
WS90A
ehps
STR 456
m16 expansion bolt
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AXICOM IM03
Abstract: AXICOM Relay im06 pioneer a201 AXICOM D2n V23105 24v AXICOM IM 43 JR relay AXICOM V23026 axicom v23105 AXICOM IM02 AXICOM Relay im06 12vdc AXICOM IM06
Text: Catalog 1308242 Issued 3-03 LOW-SIGNAL PC BOARD RELAYS Alphanumeric Index Series Type Page 159/160 . Mercury-Wetted Reed Relays . 308 Circuit Breakers . 101-124 1 Transformers. 201-212
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V23105
AXICOM IM03
AXICOM Relay im06
pioneer a201
AXICOM D2n V23105 24v
AXICOM IM 43 JR relay
AXICOM V23026
axicom v23105
AXICOM IM02
AXICOM Relay im06 12vdc
AXICOM IM06
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mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is
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T0-92
options4206A
ZVN4206C
ZVN4206E
ZVN4306A
TN2106K1
VN2210N3
TN0606N3
TN0606N6
mosfet cross reference
pj 929 diode
pj 1229 diode
BSS250
VN0109N5
pj 66 diode
pj 929
BSS295 "direct replacement"
BSS295 "cross reference"
pj 69 diode
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Untitled
Abstract: No abstract text available
Text: NTMFS4823N Power MOSFET 30 V, 30 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device http://onsemi.com
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NTMFS4823N
AND8195/D
NTMFS4823N/D
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NTMFS4823N
Abstract: NTMFS4823NT1G NTMFS4823NT3G 4823N
Text: NTMFS4823N Power MOSFET 30 V, 30 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device http://onsemi.com
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NTMFS4823N
AND8195/D
NTMFS4823N/D
NTMFS4823N
NTMFS4823NT1G
NTMFS4823NT3G
4823N
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Untitled
Abstract: No abstract text available
Text: NTMFS4823N Power MOSFET 30 V, 30 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device http://onsemi.com
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NTMFS4823N
AND8195/D
NTMFS4823N/D
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NTMFS4823N
Abstract: NTMFS4823NT1G NTMFS4823NT3G 4823N
Text: NTMFS4823N Power MOSFET 30 V, 30 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device http://onsemi.com
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NTMFS4823N
NTMFS4823N/D
NTMFS4823N
NTMFS4823NT1G
NTMFS4823NT3G
4823N
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Untitled
Abstract: No abstract text available
Text: NTMFS4823N Power MOSFET 30 V, 30 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device http://onsemi.com
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NTMFS4823N
AND8195/D
NTMFS4823N/D
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Transistor D 799
Abstract: transistor BD 522 transistor motorola 114-8 bd799 TRANSISTOR bd 147 B0801 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR
Text: MOTOROLA sc XSTRS/R F 1SE D I fe,3b?aS4 0 D Ö4 75 7 G | MOTOROLA BD795 BD797 SEMICONDUCTOR TECHNICAL DATA BD799 BD801 PLASTIC HIGH POWER SILICON NPN TRANSISTOR 8 AMPERE POWER TRANSISTOR . . . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.
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BD795
BD797
BD799
BD801
BD797
B0801
BD796
BD801
Transistor D 799
transistor BD 522
transistor motorola 114-8
TRANSISTOR bd 147
motorola s 114-8
transistor BD 800
Transistor K 799
1961 30 TRANSISTOR
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marking code 533
Abstract: bcr533
Text: SIEMENS BCR 533 NPN Silicon Digital Transistor «Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=10k£2, R2=10ki2 XCs Pin Configuration 1 =B Q62702-C2382 Package O il CO Marking Ordering Code BCR 533 Ui II eg
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10ki2)
Q62702-C2382
OT-23
300ns;
marking code 533
bcr533
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A 798
Abstract: No abstract text available
Text: 2SK2084 L , 2SK2084(S) Silicon N-Channel MOS FET HITACHI Application H ig h s p e e d p o w e r sw itc h in g Features • L o w on -resistanc e • H igh sp eed s w itc h in g • L o w drive cu rren t • 4 V gate drive d e v ic e can be d riv en from 5 V .source
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2SK2084
A 798
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Untitled
Abstract: No abstract text available
Text: bb53131 0020021 *1 N AMER PHILIPS/DISCRETE 5SE D J BDX91 BDX93 BDX95 V . ' T - 2 3 - / 3 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in TO-3 envelope for audio output stages and general-amplifier and switching applications. P-N-P complements are BDX92, BDX94 and BDX96.
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bb53131
BDX91
BDX93
BDX95
BDX92,
BDX94
BDX96.
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vk15
Abstract: CD laser pickup assembly
Text: Hologram Lasers LT0H35M/LT0H35P LT0H35M/LT0H35P H ologramLaser,orAudi0CD Player 3-beam • Features Outline Dimensions (Unit : mm.) (1) Integrates of laser diode, photodiode for signal detection, and prism into a single package by use of hologram Hologram glass
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LT0H35M/LT0H35P
LT0H35M/LT0H35P
25MIN.
25MIN,
780nm
LT0H35M
LT0H35P
1000Lx
vk15
CD laser pickup assembly
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TIP-33
Abstract: T1P33 TIP33 TIP33A TIP33B TIP33C TIP34 TIP34A TIP34B TIP34C
Text: Jv TIP33; A; B; C _ SILICON POWER TRANSISTORS N-P-N epitaxial-base power transistors in the plastic SOT-93 envelope. These transistors are intended fo r use in audio o u tp u t stages and general am plifier and switching applications. P-N-P complements are
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TIP33;
OT-93
TIP34,
TIP34A,
TIP34B
TIP34C.
TIP33
bbS3131
TIP-33
T1P33
TIP33A
TIP33B
TIP33C
TIP34
TIP34A
TIP34C
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lfs-48-24
Abstract: voltage inverter 12v to 220v 50Hz 1500w electronic LAMBDA lfs-46-24 lambda lfs-48-28 28V DC regulated power supply LFS-41-12 LAMBDA lfs LFS-38-2 LFS-49-28 LFS-43-5 LFS-46-24
Text: PART IA —AC-TO-DC SWITCHING POWER SUPPLIES S I n u s T R u ti mmsw itching llS § !W i':§ Ì Reliability starts with the design, and the LFS Series embodies a unique control concept developed by Lambda providing inherently reliable operation in transient line and load conditions, in addition, the LF Series allows
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LFS-52
LFS-45
H47-S3H2
lfs-48-24
voltage inverter 12v to 220v 50Hz 1500w electronic
LAMBDA lfs-46-24
lambda lfs-48-28 28V DC regulated power supply
LFS-41-12
LAMBDA lfs
LFS-38-2
LFS-49-28
LFS-43-5
LFS-46-24
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Untitled
Abstract: No abstract text available
Text: Bulletin 127400 rev. A 09/97 International iffiR Rectifier IRK.430. SERIES THYRISTOR / DIODE and THYRISTOR / THYRISTOR SUPER MAGN-A-pak Power Modules Features • High current capability ■ 3000 V RMS Isolating voltage with non-toxic substrate ■ High surge capability
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4flSS453
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Untitled
Abstract: No abstract text available
Text: in te g r a te d c ir c u its PBD 3517 Data Sheet Stepper Motor Drive Circuit • r - i ' a x c c a ' c eve> way. .5 a Dilevel funcacc.-.e' ~ 2 ;orce resistor. ' a -: 2 - e-te'-a components r'r : : : 2_: : ' . e _ ' t ' o r _S-TTL or mi: — ; e; reccesystem for curM ~ - _e :• .e- s tec for applications
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S-163
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Untitled
Abstract: No abstract text available
Text: /= * 7 IM , S G S -T H O M S O N IM M S [I ¥ [M iO (§ S T D A 4 6 0 1 SWITCH-MODE POWER SUPPLY CONTROLLER • LOW START-UP CURRENT ■ DIRECT CONTROL OF SWITCHING TRAN SISTOR ■ COLLECTOR CURRENT PROPORTIONAL TO BASE-CURRENT INPUT ■ REVERSE-GOING
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TDA4601
TDA4601
00Sflc
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Untitled
Abstract: No abstract text available
Text: P O W E R E X INC m / Æ Ê 1SE D Œ • 72T4bEl 0 0 0 3 b 4 tl S ■ C D L3 K Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 T -j-l-ú S 90 Tentative
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72T4bEl
BP107,
Amperes/100-1400
MAX/10
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ML40115C
Abstract: ML40115R low noise, 780nm, 5mw
Text: M ITSUBISHI L A SE R DIODES M L4XX15 SERIES FOR OPTICAL INFORMATION S Y S TE M S MITSUBISHI TYPE NAME DISCRETE SC M L 4 0 1 1 5 N , 31E D m DDIMIDS M L 4 0 1 1 5 C , ;- — BIMITS' M L 4 0 1 1 5 R :- :- : r" P LU - o s / DESCRIPTION
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ML4XX15
ML40115M,
ML40115C,
ML40115R
780nm
10MHz
300kHz
ML40115C
ML40115R
low noise, 780nm, 5mw
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BB505B
Abstract: TDA 5660 P tda5660 tda5660p FERRITE NEOSID neosid v2 neosid filter TDA 1028 TDA 5660
Text: S IE M E N S TDA5660P Modulator for TV, Video and Sound Signals The monolithically integrated circuit TDA 5660 P is especially suitable as modulator for the 48 to 860 MHz frequency range and is applied e.g. in video recorders, cable converters, TV converter installations, demodulators, video generators, video security systems, amateur
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TDA5660P
BB505B
Jn25kf!
Jj47k
BB505B
TDA 5660 P
tda5660
FERRITE NEOSID
neosid v2
neosid filter
TDA 1028
TDA 5660
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TDA 5660 P
Abstract: TDA5660P BB505 if 38,9 MHz tda5660 TDA 5660 FERRITE NEOSID guanella pm5570 neosid
Text: SIEM ENS TDA5660P Modulator for TV, Video and Sound Signals The monolithically integrated circuit TDA 5660 P is especially suitable as modulator for the 48 to 860 MHz frequency range and is applied e.g. in video recorders, cable converters, TV converter installations, demodulators, video generators, video security systems, amateur
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TDA5660P
220kR
TDA5660
TDA 5660 P
TDA5660P
BB505
if 38,9 MHz
TDA 5660
FERRITE NEOSID
guanella
pm5570
neosid
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PDF
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sharp magnetron
Abstract: lg magnetron 5586 magnetron magnetron ns magnetron tube JAN5586 a2160 magnetron* -coaxial
Text: - JAN 5586 A À NATIONAL Pulse Magnetron The National JAN5586 Magnetron is an unpackaged, pulse Magne tron tunable from 2700 MHz to 2900 MHz with a peak power out put of 800 kilowatts. The ouput is in a 1-5/8" coaxial transmission line. GENERAL CHARACTERISTICS
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JAN5586
sharp magnetron
lg magnetron
5586 magnetron
magnetron ns
magnetron tube
a2160
magnetron* -coaxial
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780nm 5MW laser diodes
Abstract: low noise 780nm laser diode Laser Diode for cd rw
Text: M IT S U B IS H I LASER DIODES M L4XX6 MITSUBISHI DISCRETE SC m 31E » SERIES ogimots s m m i t s FOR O P T IC A L IN FO R M A TIO N S Y S T E M S T '^ N - O TYPE NAME S ML4016N, ML4016C, ML4016R ML4406, ML4446N DESCRIPTION FEATURES Mitsubishi ML4XX6 are AIGaAs laser diodes emitting light
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ML4016N,
ML4016C,
ML4016R
ML4406,
ML4446N
780nm
780nm 5MW laser diodes
low noise 780nm laser diode
Laser Diode for cd rw
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