Untitled
Abstract: No abstract text available
Text: SKM 75GB173D Absolute Maximum Ratings Symbol Conditions IGBT 8EU2 @E @EXY 8ZU2 RD¥+ IR17/L 831-* SEMITRANSTM 2 IGBT Modules SKM 75GB173D Features # $ %&' *+ ,-.-/)()-01 23 # 4-5 3(60%7'(%) %'1) # 8)9: *-5 7'3* %099)(7 537& *-5 # # # # # 7).;)9'709) 6);)(6)(%)
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75GB173D
IR17/L
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UFN833
Abstract: ufn833 mosfet ufn 833 ufn830
Text: POWER MOSFET TRANSISTORS [” 500 Volt, 1.5 Ohm N-Channel FEATURES • Com pact P lastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • E xcellent Tem p erature Stability UFN832 UFN833 DESCRIPTION The Unitrode power M O SFET design u tilizes the m ost advanced technology available.
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UFN832
UFN833
UFN830
UFN831
UFN832
UFN833
ufn833 mosfet
ufn 833
ufn830
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DIN 933
Abstract: GDML 3011 LED 24 RG LG diode 831 GDME 311 228-G1 GDML GDML 211 GDML 2011 GE1 G gdml 2011 DIN 43650-A
Text: GDM Series DIN 43650-A/ISO 4400 Cable socket, self-assembly Product description • in appliances and equipment subject to vibrations, e.g. track-bound vehicles, building machinery, conveying systems, using the crimp connection method GDMC Further information
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3650-A/ISO
0722/DIN
com62
DIN 933
GDML 3011 LED 24 RG
LG diode 831
GDME 311
228-G1
GDML
GDML 211
GDML 2011 GE1 G
gdml 2011
DIN 43650-A
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LG diode 831
Abstract: 831 transistor IRF 830 IRf 334 IRF 830 TRANSISTOR irf 831 SMPS using IRF830 IRF830Fi transistor 831 Fi 830
Text: S C S -T H O M S O N ^ 7 J IIIC T » » TM IRF 830/FI-831/FI IRF 832/FI-833/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF830 IRF830FI VDSS 500 V 500 V RDS on 1.5 Ü 1.5 Q 'o ' 4.5 A 3.0 A IRF831 IRF831FI 450 V 450 V 1.5 n 1.5 n 4.5 A 3.0 A
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830/FI-831/FI
832/FI-833/FI
IRF830
IRF830FI
IRF831
IRF831FI
IRF832
IRF832FI
IRF833
IRF833FI
LG diode 831
831 transistor
IRF 830
IRf 334
IRF 830 TRANSISTOR
irf 831
SMPS using IRF830
transistor 831
Fi 830
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Untitled
Abstract: No abstract text available
Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r's D ata S heet M TY14N100E TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high
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MTY14N100E
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3866S
Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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LG diode 831
Abstract: No abstract text available
Text: HAT2019R Silicon N Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-481 C 4th. Edition Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SO P-8 5 6 D D 7 8 D % 4 1, 2, 3 Source
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HAT2019R
ADE-208-481
LG diode 831
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catalogue des transistors bipolaires de puissance
Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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1rf830
Abstract: LG diode 831 IRF830.831 IRFS32 IRFS30
Text: MICRO ELECTRONICS CORP ITE D • I bGTlîflû OOOOTTO 2 £77 'm i Æ XÿSlf}- ¡ Il T -2 V U 1RF830 1RF831 IRF832 IRF833 \j; ggg p « * ik i m V ÎI HIGH POWER MOSFETs P*itNuirb«r VDS APPLICATIONS I ’ PR E L IM IN A R Y • SWITCHING REGULATORS • MOTOR DRIVERS
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1RF830
1RF831
IRF832
IRF833
IRFS30
IRF631
IRFS32
IRF833
LG diode 831
IRF830.831
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IRF830
Abstract: IRF 450 MOSFET IRF831 LG diode 831 transistor irf830 TRANSISTOR mosfet IRF830
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF830 IRF831 IRF832 IRF833 Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS These TM O S Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid
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IRF830
IRF831
IRF832
IRF833
IRF831.
IRF 450 MOSFET
LG diode 831
transistor irf830
TRANSISTOR mosfet IRF830
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927801765
Abstract: HIRSCHMANN DIN 43650 4 pin 927801144 gdm hirschmann 14 A Hirschmann 4 pin connector hirschmann GDME gssna Hirschmann connector 4 pin HIRSCHMANN DIN 43650 4-pin GSSR 300
Text: Hirschmann INDUSTRIAL CONNECTORS GDM Connectors to DIN 43650 Form A Three and four pole industrial power connectors, made to DIN 43650 specifications. Screw or crimp style wire attachment with rubber compression gland offers protection against dust and
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VAC/300
VAC/400
VAC/250
1N4007
1N4007
MOVV180
927801765
HIRSCHMANN DIN 43650 4 pin
927801144
gdm hirschmann 14 A
Hirschmann 4 pin connector
hirschmann GDME
gssna
Hirschmann connector 4 pin
HIRSCHMANN DIN 43650 4-pin
GSSR 300
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111ii
MZ5558
Z5555,
Z5556,
MZ5557
powec rm 1110
rm 1100 powec
MPC1000
transistors JX 6822 A
inverter welder 4 schematic
SAA 14Z
transistor SI 6822
stg 8810
PL 15Z DIODE
germanium transistor
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led 7 segment anode TIL 702
Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Text: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9
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10x10
led 7 segment anode TIL 702
trw 007 diodes
TDDG 5250 m
817 optron
telefunken transistor
opto smd code marking NEC
TDDG 5250
hoa 865
DIODE PK IN 5401
7segment sm 4150
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IRFK4J350
Abstract: irfk4h350 E78996 rectifier module IRFK e78996 india LG diode 831
Text: Bulletin E27106 International S Rectifier IRFK4H350,IRFK4J350 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment. Description T he H E X -p ak™ utilises the w ell-proven H E X F E T ™ die, com bining
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E27106
IRFK4H350
IRFK4J350
E78996.
O-240
CH-8032
IL60067.
NJ07650.
FL32743.
CA90245.
IRFK4J350
E78996 rectifier module
IRFK
e78996 india
LG diode 831
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ic str wg 252
Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
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STR 6656
Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
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LG diode 831
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF740 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
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IRF740
LG diode 831
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C6248
Abstract: No abstract text available
Text: SPD, Power Conditioning, PF Capacitors and Harmonic Filters Industrial Surge Protection Products 2.1 Surge Protection and Power Conditioning Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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CVX050/100
HCUE300â
CA08100004Eâ
V3-T2-77
C6248
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triacs bt 804 600v
Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa tion for maintaining an unusually high level of quality, perfor
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Comp27-1296
triacs bt 804 600v
UR720
1N4465
AO110
diode 1N539
2N3750
Unitrode discrete databook
2N6138
CM104
unitrode 679 BRIDGE rectifier
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MV1100
Abstract: No abstract text available
Text: TH 7868B AREA ARRAY CCD IMAGE SENSOR 576 x 768 PIXELS WITH ANTIBLOOMING *2 L F VSS VGS V0H vOS1 VSS *1 P *3 P *4 P ♦ * 12*1 1231 ,24| 1211 I2QI 1191 Mel 1171 lig i 1151 IU I 1131 MAM FEATU RES • Fully compatible with CCIR TV standard. 3 ■ 2/3* optics compatible image format 11 mm diagonal .
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7868B
DSTH7B68BT/0995
MV1100
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BB113
Abstract: receiver tca440 vogt l3 Coil Assembly Vogt D41-2519 vogt l7 BB113 diode VOGT x1 TCA440 diode aa118 vogt D21-2375.1
Text: i SIEM EN S TCA 440 AM Receiver Circuit AM receiver circuit for LW, MW, and SW in battery and line operated radio receivers. It includes an RF prestage with AGC, a balanced mixer, separate oscillator, and an IF amplifier with AGC. Because of its internal stabilization, all characteristics are largely independent of the
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TCA440
100mVrm
BB113
BB113
receiver tca440
vogt l3
Coil Assembly Vogt D41-2519
vogt l7
BB113 diode
VOGT x1
TCA440
diode aa118
vogt D21-2375.1
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Rm1 2316
Abstract: EN999 PA4600 PMC-PA46TX PA46-3-400-Q2-N01-PN OMRON MA 520 rm-2ac pa46-5-300 MNT-PA46EP-KT PA46-3-500
Text: Perimeter Access Guarding PA4600 PA4600 Perimeter Access Guarding Device • • • • • 1 to 6 beams available Operating range of 70 m Compact size — 46 x 55 mm 1.81 x 2.17 in. Simple “two-box” design — no separate control box required Individual beam indicators
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PA4600
PA4600
Rm1 2316
EN999
PMC-PA46TX
PA46-3-400-Q2-N01-PN
OMRON MA 520
rm-2ac
pa46-5-300
MNT-PA46EP-KT
PA46-3-500
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transistor eft 323
Abstract: EFT 323 transistor BC-108 6001-015 service-mitteilungen bc149 EFT323 bauelemente DDR OA1180 TRANSISTOR BC 187
Text: S E R V I C E - MI TTEILUNGEN r a d i o -television DATUM: Juli 1973 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN AUSGABE: 8/73 Neu« Import - Geräte LUDWIK und JUBILAT - Rundfunkempfänger aus der VR Polen Aua der VR Polen werden o.g. Rundfunkempfänger importiert. Beide Ge
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Germanium drift transistor
Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
Text: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of
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orporation/464
CH-8105
Germanium drift transistor
2N4895
germanium transistor
epitaxial mesa
transistor sec tip31A
halbleiter index transistor
transistor BD222
BD699 EQUIVALENT
kd 2060 transistor
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