Untitled
Abstract: No abstract text available
Text: !LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED SMD Pb Lead-Free Parts LG-170DBK-CT-SD DATA SHEET DOC. NO : QW0905-LG-170DBK-CT-SD REV. : B DATE : 06 - Sep. - 2012 發行 立碁電子 DCC !LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/11
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LG-170DBK-CT-SD
QW0905-LG-170DBK-CT-SD
LG-170DBK-CT-SD
LG-170
applications24hrs,
72hrs)
1000hrs¡
MIL-STD-202F
10min)
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fujitsu hemt
Abstract: fujitsu transistor HEMT fhc40lg 280AM low noise hemt
Text: FHC40LG - Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability
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FH40LG
2-12GHz
FHC40LG
FCSI0598M200
fujitsu hemt
fujitsu transistor HEMT
fhc40lg
280AM
low noise hemt
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Untitled
Abstract: No abstract text available
Text: FHR20X - GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg s 0.15|iim, Wg = 100|iim Gold Gate Metallization for High Reliability
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FHR20X
18GHz
FHR20X
2-30GHz
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: FHX45X - GaAs FET & HEMT Chips FEATURES • Low Noise Figure: 0.55dB Typ. @f=12GHz • High Associated Gain: 12.0dB (Typ.)@f=12GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability
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FHX45X
12GHz
FHX45X
2-18GHz
FCSI0598M200
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1605dxb
Abstract: No abstract text available
Text: Data Sheet February 1999 microelectronics group Lucent Technologies Bell Labs Innovations LG1605DXB Limiting Amplifier Features • Digital video transmission ■ 28 dB gain, 34 dB differential ■ Interface between 1319 receiver and LG 1600 clock and data regenerator
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LG1605DXB
DS98-400HSPL
DS96-236FCE)
1605dxb
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am29203 "evaluation board"
Abstract: L0512 MV8000 TTL catalog CL1101 8038 ic tester circuit diagram tl 2345 ml gcr encoder parallel bus arbitration 30GRAMMABLE
Text: PROGRAMMABLE ’ROGRAMMABLE 30GRAMMABLE L DGRAMMABLE LG 3RAMMABLE LOG ÏRAMMABLE LOGI ÌAMMABLE LÄGIC a Advanced Micro Devices Programmable Array Logic Handbook Prepared by the Product Planning and Applications Staff at Advanced M icro Devices, Inc. Brad Kitson, Editor
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30GRAMMABLE
I-20090
S-172
am29203 "evaluation board"
L0512
MV8000
TTL catalog
CL1101
8038 ic tester circuit diagram
tl 2345 ml
gcr encoder
parallel bus arbitration
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2SC5088
Abstract: No abstract text available
Text: TOSHIBA 2SC5088 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5088 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2le|2= 13dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING
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2SC5088
CH451
/-J250
2SC5088
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LM 3171
Abstract: IC LM 1246
Text: TOSHIBA 2SC4320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC432Q VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . NF - l.ld B , U nit in mm |S2lel2= 15dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL
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2SC4320
2SC432Q
Nois151
--j50
LM 3171
IC LM 1246
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5088 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5088 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2le|2= 13dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING
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2SC5088
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NE76100
Abstract: NE76100M NE76100N
Text: GENERAL PURPOSE GaAs MESFET FEATURES • LG = 1.0 µm, WG = 400 µm DESCRIPTION NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure makes this device appropriate for use in the second or third stages of
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NE76100
NE76100
NE76100N
NE76100M
24-Hour
NE76100M
NE76100N
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low noise hemt
Abstract: transistor hemt FHX35LG transistor HEMT GaS rf transistor 3742
Text: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B Typ. @f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX35LG
12GHz
FHX35LG
2-18GHz
low noise hemt
transistor hemt
transistor HEMT GaS
rf transistor 3742
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FHX35LP
Abstract: FHX35LG WG 924 FHX35
Text: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B Typ. @f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX35LG
12GHz
FHX35LG
2-18GHz
reliabili4888
FHX35LP
WG 924
FHX35
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Untitled
Abstract: No abstract text available
Text: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B Typ. @f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX35LG
12GHz
FHX35LG
2-18GHz
the88
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Untitled
Abstract: No abstract text available
Text: FHX13X, FHX14X _ GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @ f=12G Hz (FHX13) High Associated Gain: 13.0dB (Typ.)@ f=12G Hz Lg s 0.15|iim, Wg = 200|iim Gold G ate M etallization for High Reliability
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FHX13X,
FHX14X
FHX13)
FHX14X
2-18G
FCSI0598M200
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fhc40lg
Abstract: 18GHZ LG 932 fujitsu hemt
Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHC40LG
FH40LG
2-12GHz
FCSI0598M200
fhc40lg
18GHZ
LG 932
fujitsu hemt
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c 5929 transistor
Abstract: lg5925 LG5929 BG5924 safemaster lg5925 BG5925 c 5929 LG5924 M8562 BG5929
Text: Sicherheitstechnik Erweiterungsmodul LG 5929 safemaster 0242979 • • • • • • • • • Geräteanzeigen nach der EG-Richtlinie für Maschinen 98/37/EG nach IEC/EN 60 204-1 Sicherheitskategorie 4 nach EN 954-1 redundante und zwangsgeführte Kontakte
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98/37/EG
LG5929/100
leuchtetBG5929,
LG5929
BG5925,
LG5925
M8894
BG5929/100,
D-78114
c 5929 transistor
lg5925
LG5929
BG5924
safemaster lg5925
BG5925
c 5929
LG5924
M8562
BG5929
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FHX35LP
Abstract: FHX35LG fujitsu hemt
Text: FHX35LG/LP Super Low Noise HEMT FEATURES • • • • • Low Noise Figure: 1.2B Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Cost Effective Ceramic Microstrip (SMT) Package
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FHX35LG/LP
12GHz
FHX35LG/LP
2-18GHz
FCSI0598M200
FHX35LP
FHX35LG
fujitsu hemt
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Untitled
Abstract: No abstract text available
Text: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1,7dB MAX. @ f=20GHz NF=2.0dB (MAX.) @ f=24GHz • High Associated Gain: Gas=14dB (MIN.) @ f=20GHz Gas=12dB (MIN.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION
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FMM5701LG
20GHz
24GHz
18-24GHz
FMM5701LG
18-24GHz
FCSI0598M200
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FHX35LG
Abstract: FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35
Text: FHX35LG/LP -FEATURES • • • • • Super Low Noise HEMT Low Noise Figure: 1.2B Typ. @ f=12G Hz High A ssociated Gain: 10.0dB (Typ.)@ f=12G Hz Lg s 0.25|iim, W g = 280|iim Gold Gate M etallization for High Reliability
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12GHz
FHX35LG/LP
2-18GHz
FHX35LG/LP
FCSI0598M200
FHX35LG
FHX35LP
low noise hemt
fujitsu hemt
1 987 280 103
FHX35
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fhc40lg
Abstract: 18GHZ low noise hemt FH40LG
Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHC40LG
FH40LG
2-12GHz
fhc40lg
18GHZ
low noise hemt
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15A03
Abstract: No abstract text available
Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX13LG,
FHX14LG
12GHz
FHX13)
FHX14LG
2-18GHz
15A03
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Untitled
Abstract: No abstract text available
Text: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX04LG,
12GHz
FHX04)
FHX05LG,
FHX06LG
2-18GHz
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FHX13LG
Abstract: FHX13 FHX14LG
Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX13LG,
FHX14LG
12GHz
FHX13)
FHX14LG
2-18GHz
FHX13LG
FHX13
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TC1201
Abstract: TC3921 WG SOT143R
Text: TC3921 REV1_20070503 Low-Cost Single-Bias Medium Power PHEMT GaAs FETs FEATURES PHOTO ENLARGEMENT ! 22 dBm Typical Output Power at 6 GHz ! High Linear Power Gain: GL = 12 dB Typical at 6 GHz ! Lg = 0.25 µm, Wg = 300 µm ! 100 % DC Tested ! Low Cost Plastic SOT143R Package
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TC3921
OT143R
TC3921
TC1201
WG SOT143R
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