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    LG S12 Search Results

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    LG S12 Price and Stock

    Festo SLG-S-12-200

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    DigiKey SLG-S-12-200 Bulk 1
    • 1 $136.55
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    Festo SLG-S-12-400

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    • 1 $199.4
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    Festo SLG-S-12-300

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    DigiKey SLG-S-12-300 Bulk 1
    • 1 $167.98
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    Varitronix VLGS12864-01

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    Belden Inc HK2F6S-LL-GS-12,5-L

    SPE M12 12.5 MM PCB INSERT, FRON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HK2F6S-LL-GS-12,5-L Bulk 1
    • 1 $33.81
    • 10 $28.734
    • 100 $24.4266
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    LG S12 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: !LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED SMD Pb Lead-Free Parts LG-170DBK-CT-SD DATA SHEET DOC. NO : QW0905-LG-170DBK-CT-SD REV. : B DATE : 06 - Sep. - 2012 發行 立碁電子 DCC !LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/11


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    LG-170DBK-CT-SD QW0905-LG-170DBK-CT-SD LG-170DBK-CT-SD LG-170 applications24hrs, 72hrs) 1000hrs¡ MIL-STD-202F 10min) PDF

    fujitsu hemt

    Abstract: fujitsu transistor HEMT fhc40lg 280AM low noise hemt
    Text: FHC40LG - Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability


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    FH40LG 2-12GHz FHC40LG FCSI0598M200 fujitsu hemt fujitsu transistor HEMT fhc40lg 280AM low noise hemt PDF

    Untitled

    Abstract: No abstract text available
    Text: FHR20X - GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg s 0.15|iim, Wg = 100|iim Gold Gate Metallization for High Reliability


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    FHR20X 18GHz FHR20X 2-30GHz FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: FHX45X - GaAs FET & HEMT Chips FEATURES • Low Noise Figure: 0.55dB Typ. @f=12GHz • High Associated Gain: 12.0dB (Typ.)@f=12GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability


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    FHX45X 12GHz FHX45X 2-18GHz FCSI0598M200 PDF

    1605dxb

    Abstract: No abstract text available
    Text: Data Sheet February 1999 microelectronics group Lucent Technologies Bell Labs Innovations LG1605DXB Limiting Amplifier Features • Digital video transmission ■ 28 dB gain, 34 dB differential ■ Interface between 1319 receiver and LG 1600 clock and data regenerator


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    LG1605DXB DS98-400HSPL DS96-236FCE) 1605dxb PDF

    am29203 "evaluation board"

    Abstract: L0512 MV8000 TTL catalog CL1101 8038 ic tester circuit diagram tl 2345 ml gcr encoder parallel bus arbitration 30GRAMMABLE
    Text: PROGRAMMABLE ’ROGRAMMABLE 30GRAMMABLE L DGRAMMABLE LG 3RAMMABLE LOG ÏRAMMABLE LOGI ÌAMMABLE LÄGIC a Advanced Micro Devices Programmable Array Logic Handbook Prepared by the Product Planning and Applications Staff at Advanced M icro Devices, Inc. Brad Kitson, Editor


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    30GRAMMABLE I-20090 S-172 am29203 "evaluation board" L0512 MV8000 TTL catalog CL1101 8038 ic tester circuit diagram tl 2345 ml gcr encoder parallel bus arbitration PDF

    2SC5088

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5088 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5088 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2le|2= 13dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING


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    2SC5088 CH451 /-J250 2SC5088 PDF

    LM 3171

    Abstract: IC LM 1246
    Text: TOSHIBA 2SC4320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC432Q VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . NF - l.ld B , U nit in mm |S2lel2= 15dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL


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    2SC4320 2SC432Q Nois151 --j50 LM 3171 IC LM 1246 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5088 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5088 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2le|2= 13dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING


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    2SC5088 PDF

    NE76100

    Abstract: NE76100M NE76100N
    Text: GENERAL PURPOSE GaAs MESFET FEATURES • LG = 1.0 µm, WG = 400 µm DESCRIPTION NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure makes this device appropriate for use in the second or third stages of


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    NE76100 NE76100 NE76100N NE76100M 24-Hour NE76100M NE76100N PDF

    low noise hemt

    Abstract: transistor hemt FHX35LG transistor HEMT GaS rf transistor 3742
    Text: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B Typ. @f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


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    FHX35LG 12GHz FHX35LG 2-18GHz low noise hemt transistor hemt transistor HEMT GaS rf transistor 3742 PDF

    FHX35LP

    Abstract: FHX35LG WG 924 FHX35
    Text: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B Typ. @f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


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    FHX35LG 12GHz FHX35LG 2-18GHz reliabili4888 FHX35LP WG 924 FHX35 PDF

    Untitled

    Abstract: No abstract text available
    Text: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B Typ. @f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


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    FHX35LG 12GHz FHX35LG 2-18GHz the88 PDF

    Untitled

    Abstract: No abstract text available
    Text: FHX13X, FHX14X _ GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @ f=12G Hz (FHX13) High Associated Gain: 13.0dB (Typ.)@ f=12G Hz Lg s 0.15|iim, Wg = 200|iim Gold G ate M etallization for High Reliability


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    FHX13X, FHX14X FHX13) FHX14X 2-18G FCSI0598M200 PDF

    fhc40lg

    Abstract: 18GHZ LG 932 fujitsu hemt
    Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


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    FHC40LG FH40LG 2-12GHz FCSI0598M200 fhc40lg 18GHZ LG 932 fujitsu hemt PDF

    c 5929 transistor

    Abstract: lg5925 LG5929 BG5924 safemaster lg5925 BG5925 c 5929 LG5924 M8562 BG5929
    Text: Sicherheitstechnik Erweiterungsmodul LG 5929 safemaster 0242979 • • • • • • • • • Geräteanzeigen nach der EG-Richtlinie für Maschinen 98/37/EG nach IEC/EN 60 204-1 Sicherheitskategorie 4 nach EN 954-1 redundante und zwangsgeführte Kontakte


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    98/37/EG LG5929/100 leuchtetBG5929, LG5929 BG5925, LG5925 M8894 BG5929/100, D-78114 c 5929 transistor lg5925 LG5929 BG5924 safemaster lg5925 BG5925 c 5929 LG5924 M8562 BG5929 PDF

    FHX35LP

    Abstract: FHX35LG fujitsu hemt
    Text: FHX35LG/LP Super Low Noise HEMT FEATURES • • • • • Low Noise Figure: 1.2B Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Cost Effective Ceramic Microstrip (SMT) Package


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    FHX35LG/LP 12GHz FHX35LG/LP 2-18GHz FCSI0598M200 FHX35LP FHX35LG fujitsu hemt PDF

    Untitled

    Abstract: No abstract text available
    Text: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1,7dB MAX. @ f=20GHz NF=2.0dB (MAX.) @ f=24GHz • High Associated Gain: Gas=14dB (MIN.) @ f=20GHz Gas=12dB (MIN.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION


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    FMM5701LG 20GHz 24GHz 18-24GHz FMM5701LG 18-24GHz FCSI0598M200 PDF

    FHX35LG

    Abstract: FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35
    Text: FHX35LG/LP -FEATURES • • • • • Super Low Noise HEMT Low Noise Figure: 1.2B Typ. @ f=12G Hz High A ssociated Gain: 10.0dB (Typ.)@ f=12G Hz Lg s 0.25|iim, W g = 280|iim Gold Gate M etallization for High Reliability


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    12GHz FHX35LG/LP 2-18GHz FHX35LG/LP FCSI0598M200 FHX35LG FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35 PDF

    fhc40lg

    Abstract: 18GHZ low noise hemt FH40LG
    Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


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    FHC40LG FH40LG 2-12GHz fhc40lg 18GHZ low noise hemt PDF

    15A03

    Abstract: No abstract text available
    Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


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    FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz 15A03 PDF

    Untitled

    Abstract: No abstract text available
    Text: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


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    FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz PDF

    FHX13LG

    Abstract: FHX13 FHX14LG
    Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


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    FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz FHX13LG FHX13 PDF

    TC1201

    Abstract: TC3921 WG SOT143R
    Text: TC3921 REV1_20070503 Low-Cost Single-Bias Medium Power PHEMT GaAs FETs FEATURES PHOTO ENLARGEMENT ! 22 dBm Typical Output Power at 6 GHz ! High Linear Power Gain: GL = 12 dB Typical at 6 GHz ! Lg = 0.25 µm, Wg = 300 µm ! 100 % DC Tested ! Low Cost Plastic SOT143R Package


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    TC3921 OT143R TC3921 TC1201 WG SOT143R PDF