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    LH536 Search Results

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    LH536 Price and Stock

    Renesas Electronics Corporation XLH536025.000000I

    XTAL OSC XO 25.0000MHZ HCMOS SMD
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    DigiKey XLH536025.000000I Reel 5,000 1,000
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    Avnet Americas XLH536025.000000I Reel 4,000 12 Weeks 1,000
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    Mouser Electronics XLH536025.000000I 2,049
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    Newark XLH536025.000000I Cut Tape 144 1
    • 1 $1.3
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    Avnet Silica XLH536025.000000I 13 Weeks 1,000
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    Renesas Electronics Corporation XLH536048.000000I

    XTAL OSC XO 48.0000MHZ HCMOS SMD
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    DigiKey XLH536048.000000I Cut Tape 2,946 1
    • 1 $1.42
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    XLH536048.000000I Digi-Reel 2,946 1
    • 1 $1.42
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    • 100 $1.0547
    • 1000 $0.95194
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    XLH536048.000000I Reel 2,000 1,000
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    Mouser Electronics XLH536048.000000I 3,493
    • 1 $1.57
    • 10 $1.47
    • 100 $1.25
    • 1000 $1.02
    • 10000 $0.975
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    Renesas Electronics Corporation XLH536026.000000I

    XTAL OSC XO 26.0000MHZ HCMOS SMD
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    DigiKey XLH536026.000000I 1,963 1
    • 1 $1.57
    • 10 $1.498
    • 100 $1.2544
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    Newark XLH536026.000000I Cut Tape 435 1
    • 1 $1.3
    • 10 $1.25
    • 100 $1.04
    • 1000 $0.852
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    Renesas Electronics Corporation XLH536001.000000X

    XTAL OSC XO 1.0000MHZ HCMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey XLH536001.000000X Reel 1,000 1,000
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    Renesas Electronics Corporation XLH536012.288000I

    XTAL OSC XO 12.2880MHZ HCMOS SMD
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    DigiKey XLH536012.288000I 957 1
    • 1 $2.04
    • 10 $1.759
    • 100 $1.5184
    • 1000 $1.31225
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    Mouser Electronics XLH536012.288000I 3,728
    • 1 $2.04
    • 10 $1.76
    • 100 $1.52
    • 1000 $1.26
    • 10000 $1.26
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    Newark XLH536012.288000I Cut Tape 2,850 1
    • 1 $2.28
    • 10 $2.23
    • 100 $1.86
    • 1000 $1.54
    • 10000 $1.54
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    Avnet Silica XLH536012.288000I 13 Weeks 1,000
    • 1 -
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    LH536 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH5364000N Sharp EPROM Parallel Async Original PDF

    LH536 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    44-PIN

    Abstract: LH5364000N A6527
    Text: CMOS 64M 8M x 8/4M × 16 Mask-Programmable ROM LH5364000 FEATURES • 8,388,608 words × 8 bit organization (Byte mode) 4,194,304 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 385 mW (MAX.) Standby: 550 µW (MAX.)


    Original
    PDF LH5364000 44-PIN 44-pin, 600-mil LH5364000 64M-bit 44SOP LH5364000N A6527

    MB834000

    Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
    Text: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010


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    PDF MX27C256 i27C256 Am27C256 NM27C256 M27C256 MX27C512 i27C512 Am27C512 NM27C512 M27C512 MB834000 M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel

    Untitled

    Abstract: No abstract text available
    Text: LH5364000 FEATURES • 8,388,608 words Byte mode 4,194,304 words (Word mode) CMOS 64M (8M x 8/4M x 16) Mask-Programmable ROM PIN CONNECTIONS x 8 bit organization 44-PIN SOP x 16 bit organization • Access time: 150 ns (MAX.) • Power consumption: Operating: 385 mW (MAX.)


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    PDF LH5364000 44-PIN 44-pin, 600-mil LH5364000 64M-bit

    LH5324000D

    Abstract: LH5324C00 LH5324C00D LH5365 sharp mask rom 48TSOP LH536
    Text: SHARP NEW PRODUCT INFORMATION LH5324C00 24M-bit Mask-Programmable ROM ■ Description Pin Connections The LH5324C00D User’s No. : LH536CXX is a CMOS 24M-bit mask-programmable ROM organized as 1 572 864 X 16 bits. It is fabricated using sillicon-gate CMOS process


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    PDF LH5324C00 24M-bit LH5324C00D LH536CXX) 42-pin DIP042-P-0600) A0-A20 LH5324000D LH5324C00 LH5324C00D LH5365 sharp mask rom 48TSOP LH536

    LH5364600

    Abstract: No abstract text available
    Text: LH5364600N 64M Mask ROM Model No.: LHMN06xx Spec No.: MR97Y04 Issue Date: November 27, 1997 SHARP LH5364600N •Handle this document carefully for it contains nterial protected by international copyright la*. Any reproduction, full or in part, of this raterial is prohibited


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    PDF LH5364600N LHMN06xx) MR97Y04 0-70t LH5364600

    24M-bit mask rom

    Abstract: LH5324000D LH5324C00 LH5324C00D 24M-BIT
    Text: INFORMATION L H 5 3 2 4 C 0 0 • 24M-bit Mask-Programmable ROM Pin Connections Description The LH5324C00D User's No. : LH536CXX is a CMOS 24M-bit mask-programmable ROM organized as 1 572 864 X 16 bits. It is fabricated using sillicon-gate CMOS process technology.


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    PDF 24M-bit LH5324C00 LH5324C00D LH536CXX) 42-pin DIP042-P-0600) A0-A20 24M-bit mask rom LH5324000D LH5324C00 LH5324C00D

    LH5364600

    Abstract: No abstract text available
    Text: 64M Mask ROM Model No.: LHMNOBxx Spec No.: MR97Y05 Issue Date: November 27, 1997 SHARP LH5364600T •Handle this docuaent carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this «atería! is prohibited


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    PDF MR97Y05 LH5364600T LH5364600T LH5364600

    536G

    Abstract: LH534600
    Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)


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    PDF LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


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    PDF IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02

    LH231G

    Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
    Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200


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    PDF 28DIP 28DIP LH2389D LH23128D LH23286D LH236120 LH2310006D LH231G lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235

    lh5s4

    Abstract: lh537 48-TSOP LH5s 42-DIP 48TSOP1 LH5364P00D LH538 LH5S46
    Text: MEMORIES • Mask ROM Specific Pinout ★ U n d e rd e v e lo p m e n t • 3 V 3 .3 V operation Access time B it C a p a c ity configuration 1M x8 2M x 8/x 16 4M x 8/x 16 8M x 8/x 16 16M x 8/x 16 32 M x 8/x 16 64M 128M * x 8/x 16 x 16 Readable at 2.7 V.


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    PDF LH531000BN-S LH53V2P00AN/AT LH53V4P00N/T LH53V8500N/T LH53V16500AN/AT LH53V32500AN-2 LH53V32500AT-2 LH53V64P00T LH53V64POON LH53V12800T lh5s4 lh537 48-TSOP LH5s 42-DIP 48TSOP1 LH5364P00D LH538 LH5S46

    lh537

    Abstract: 42DIP lh533200 LH535g
    Text: MEMORIES • Mask ROMs Process CMOS ★ U n d e r development MEMORIES ★ Under developm ent Configuration Process Capacity (wortsxbits Access time (ns) MAX. Model No. Pinout LH-538VXX 100 100 5 ± 10% 32DIP/32SOP/32TSOPÎII) Normal 120 60 5 ± 10% L H 5 3 8 3 0 0 C D /C W C S Æ S H


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    PDF LH-538VXX LH-5387XX LH-538NXX 32DIP/32SOP/32TSOP 32DIP/32SOP/ 32TSOP 42DIP/44SOP 48TSOP0) lh537 42DIP lh533200 LH535g

    flash 64m

    Abstract: No abstract text available
    Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161


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    PDF 100ns 120ns 150ns 256kj LH53259 LH53517 LH531V00 LH530800A LH531024 LH532048 flash 64m

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


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    PDF 109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES ★ Capacity Configuration * 1 C om patible with 4 M -bit flash m em ories from A d vanced M icro D evices, Inc. * 2 C om patible with 4 M -bit flash m em ories from Intel Corp. A c c e s s tim e Under development MEMORIES ★ Under development Access time


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    PDF 28kx8 128kx 256kx LH53H4000 LH532600 LH532000B-1 LH531000B LH532000B LH534600C LH534P00B

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


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    PDF ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02

    48 tsop flash pinout

    Abstract: LH23512
    Text: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)


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    PDF LH2369 LH23126 LH23255 LH53259 LH23512 LH53517 LH53H0900 LH531VOO LH530800A LH530800A-Y 48 tsop flash pinout

    lh5s4

    Abstract: LH537 lh5s4p lh5s4R lh5s46 LH538 44SOP lh533200 LH5s 5g85
    Text: MASK ROM ☆ New product ★ • M Capacity ASK F O M S Bit Pinout* configuration Model No. LH53V4T00E J J x8 4M x 16 x 8/ x 16 x8 8M x 8/ x 16 LH53V4ROOAN/AT LH53V4R00N/T J J J LH53V4YG0N/E LH53H4100D/N LH534700D/N LH534R00BD/BN LH53V4B00T J J F F LH534A00T


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    PDF LH53V4T00E LH53V4ROOAN/AT LH53V4R00N/T LH53V4YG0N/E LH53H4100D/N LH534700D/N LH534R00BD/BN LH53V4B00T LH534A00T LH534BOOT lh5s4 LH537 lh5s4p lh5s4R lh5s46 LH538 44SOP lh533200 LH5s 5g85

    triac tag 8518

    Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
    Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference


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    PDF

    IR2E27A

    Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
    Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080


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    PDF Core28 IR2C24A/AN IR2C26 IR2C30/N IR2C32 IR2C33 IR2C34 IR2C36 IR2C38/N IR2C43 IR2E27A IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31

    sharp mask rom

    Abstract: No abstract text available
    Text: SHARP SPEC No. M R 9 7 Y 0 6 Nov. 27 1997 ISSUE: To ; T O f 17 ; vv ! K .h iF = 1 PKELIMINABY S P E C I F I C A T I O N S Product Type 6 4M bit Mask ROM LHMNOHXX Model No._ L H 5 3 6 4 6 0 0 D This device specification is subject to change without notice.


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    PDF LH5364600D LH5364600D A0-A21 D0-D15 sharp mask rom

    DIC14

    Abstract: No abstract text available
    Text: CMOS 8M 1M x 8 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 1,048,576 • Access time: 120 ns (M AX.) • Low-power consumption: x 8 bit organization 32-PIN DIP 1• A 19E Operating: 330 m W (M AX.) Standby: 550 TO P VIEW / \ 32 □ Vex: A ie C 2 31 ID A 18


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    PDF 32-PIN 32-pin, 600-m 525-m LH538R00A LH536 I-------12 DIC14

    Untitled

    Abstract: No abstract text available
    Text: CMOS 64M 8M x 8/4M x 16 MROM FEATURES • 8,388,608 words x 8 bit organization (Byte mode) 4,194,304 words x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 385 mW (MAX.) Standby: 550 \i\N (MAX.) • Static operation


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    PDF 44-pin, 600-mil 44-PIN D15/A. 600-rnil LH5364000 OP044-P-0600)

    Untitled

    Abstract: No abstract text available
    Text: CMOS 64M 8 M x 8/4 M x 16 MROM FEATURES 44-P IN SO P T O P V IE W s "N < EL • 8,388,608 words x 8 bit organization (Byte mode) 4,194,304 words x 16 bit organization (Word mode) PIN CONNECTIONS A -|8 IZ 43 — I a 19 A 17IZ 3 42 ^ Ag • Access time: 150 ns (MAX.)


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    PDF 44-pin, 600-mil LH5364000 64M-bit LH5364000 44SOP OP044-P-0600)