pa 17105-3608
Abstract: 17105-3608 tyco 17105-3608 "electrical connector"
Text: Instruction Sheet High-Power Light Emitting Diode LED 408-10278 Light Sockets 2008639-[ ] for AMP LIGHT GUIDES* Light Pipes 01 APR 09 Rev A 2. DESCRIPTION Light Pipe 2058295-[ ] (Available Separatetly) The light socket consists of a locking ring, contact
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LN189S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical
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LN189S
LN189S
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Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 M Di ain sc te on na tin nc ue e/ d Fast response and high-speed modulation capability : tr, tf = 20 ns typ. Infrared light emission close to monochromatic light : λP = 880 nm(typ.)
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LN189L
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Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 M Di ain sc te on na tin nc ue e/ d Fast response and high-speed modulation capability : tr, tf =20 ns typ. Infrared light emission close to monochromatic light : λP = 880 nm(typ.)
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LN189S
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Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm
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fiber optic FM Modulator
Abstract: STM Thermistor NDL7603P NDL7620P NDL7701P NDL7705P NDL7910P NX8562LB NX8562LB-BA NX8562LB-CA
Text: DATA SHEET LASER DIODE NX8562LB 1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE DESCRIPTION The NX8562LB is a 1 550 nm laser diode with Polarization Maintain Fiber PMF . This device is designed as CW light source and ideal for transmission systems in which external modulators are
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NX8562LB
NX8562LB
14-pin
fiber optic FM Modulator
STM Thermistor
NDL7603P
NDL7620P
NDL7701P
NDL7705P
NDL7910P
NX8562LB-BA
NX8562LB-CA
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 3.75±0.3 • Features 12.5 min. • High-power output, high-efficiency: PO = 3.5 mW typ. • Infrared light emission close to monochromatic light:
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LN162S
CTRLR102-001
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ETC 529 DIODE
Abstract: NDL7910P NX7460LE NX7461LE NX7660JC NX8501 NX8561JD NX8570SA NX8570SA-BA NX8570SA-CA
Text: PRELIMINARY DATA SHEET LASER DIODE NX8570SA 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570SA is a 1 550 nm laser diode with wavelength monitor function. This device is designed as CW light source and ideal for transmission systems in which external modulators are
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NX8570SA
NX8570SA
14-pin
ETC 529 DIODE
NDL7910P
NX7460LE
NX7461LE
NX7660JC
NX8501
NX8561JD
NX8570SA-BA
NX8570SA-CA
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L012
Abstract: 5mm Common Cathode RGB LEDS 5mm Common Cathode RGB LEDS 5mm "electrical connector"
Text: High-Power Light Emitting Diode LED Application Specification 114-13232 Light Socket for AMP LIGHT GUIDES* Light Pipes NOTE i 01 MAY 09 Rev B All numerical values are in metric units [with U.S. customary units in brackets]. Dimensions are in millimeters [and
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Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN184 Unit : mm M Di ain sc te on na tin nc ue e/ , , d , 1.0 max. GaAlAs Infrared Light Emitting Diode 4.5±0.2 2.0 0.29 Light source for distance measuring systems ø4.6±0.15 Fast response and high-speed modulation capability : tr, tf = 20 ns(typ.)
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LN184
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Untitled
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Text: Infrared Light Emitting Diodes LN189M GaAlAs Infrared Light Emitting Diode Unit: mm Light source for distance measuring systems 1 0.4±0.1 0.6 0.2 1.0 3.0±0.2 0.6±0.1 Forward current DC Pulse forward current * Reverse voltage (DC) Operating ambient temperature
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LN189M
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LNA2601L
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode Unit : mm 3.5±0.3 2.4 1.1 0.8 max. 1.1 0.8 For optical control systems Features High-power output, high-efficiency 3.0±0.3 ø1.1 R0.5 1.95±0.25 1.4±0.2 0.9 0.5 Infrared light emission close to monochromatic light : λP = 950 nm
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LNA2601L
LNA2601L
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For remote control systems Unit: mm 7.65±0.2 1.0 3.9±0.31 (1.0) 11.5±1.0 • High-power output, high-efficiency: Ie = 13.0 mW/sr (min.) • Emitted light spectrum suited for silicon photodetectors
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LN66F
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For remote control systems Unit: mm 7.65±0.2 1.0 3.6±0.3 (1.0) 13.5±1.0 • High-power output, high-efficiency: Ie = 13.0 mW/sr (min.) • Emitted light spectrum suited for silicon photodetectors
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LN66F
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Untitled
Abstract: No abstract text available
Text: 3GE » NEC • L 4 5 7 5 5 5 005^515 T ■ ELECTRONICS INC T-4 -é>*7 LIGHT EMITTING DIODE ._/ NDL4201A 850 nm O PTICA L FIB ER COM M UNICATIONS AIGaAs LIGHT EMITTING DIODE DESCRIPTION NDL4201A is an AIGaAs double heterostructure light emitting diode designed for a light source of medium distance and
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NDL4201A
NDL4201A
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Untitled
Abstract: No abstract text available
Text: Galliumarsenidphosphid-Lumineszenzdioden GaAsP Red Light Emitting Diodes Anwendung: Application: Rotleuchtende Diode für allgemeine Anzeigezwecke Red light em itting diode for general indicating purposes Besondere Merkmale: Features: • Kunststoffgehäuse
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mapj
Abstract: No abstract text available
Text: L427SES 3QE D N E C ELECTRONICS OOEÌSl? INC 3 r - H I -£>7 LIGHT EMITTING DIODE N D L4201 B 850 nm O P T IC A L F IB E R C O M M U N IC A TIO N S AIGaAs LIGHT EMITTING DIODE DESCRIPTION NDL4201B is an AIGaAs double heterostructure light emitting diode. It adopts a package with ball lens to achieve easy optical coupling.
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L427SES
L4201
NDL4201B
35MHz
b427SSS
002T21fl
NDL4201B
mapj
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RSIG diode
Abstract: TFK 347 P 2347 V139P PF126
Text: V 138 P • V 139 P Galiiumarsenidphosphid-Lumineszenzdioden GaAsP Red Light Emitting Diodes Anwendung: Rotleuchtende Diode für allgemeine Anzeigezwecke Application: Red light em itting diode for general indicating purposes Besondere Merkmale: Features: • M iniatur-Kunststoffgehäuse
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V139P
RSIG diode
TFK 347
P 2347
PF126
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diode hitachi
Abstract: No abstract text available
Text: HE8404SG GaAlAs Infrared Emitting Diode HITACHI Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. suitable for use as the light source in a wide range of optical control and sensing equipment. Features •
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HE8404SG
HE8404SG
8404SG
diode hitachi
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OLD222H
Abstract: OLP222H 910nm
Text: O K I electronic components OLP222H_ GaAIAs Infrared Light Emitting Diode with Non-Spherical Surface Lens GENERAL DESCRIPTION The OLD222H is a high-output GaAIAs infrared light em ission diode sealed w ith a glass lens in a TO -18 case. Its light em ission w ave peaks at 910 nm. Because of its sharp directivity, m ultiple units
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OLP222H_
OLD222H
b7242M0
0LD222H
Ifm/100
b724240
OLP222H
910nm
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Untitled
Abstract: No abstract text available
Text: mn GaAs LIGHT-EMITTING DIODE “PIGTAIL’ 62017 TYPE GS 3040 OPTOELECTRONIC PRODUCTS DIVISION * HIGH INTENSITY GaAIAs VERSION AVAILABLE MINIATURE HIGH EFFICIENCY LED WITH NARROW BEAM ANGLE GLASS/METAL WELDED PACKAGE Mii 62071 is a P-N GaAs Infrared Light Emitting Diode in a lensed coaxial package designed to be
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MIL-S-19500.
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Untitled
Abstract: No abstract text available
Text: 30E D N E C • b^SSS OGSTSOT 4 ■ T'H-|'P7 LIGHT EMITTING DIODES ELECTRONICS INC _ / NDL4105A,4105-78,4105-88 850 nm,780 nm,880 nm O PTICA L FIBER COM M UNICATIONS AIGaAs LIGHT EMITTING DIODE DESCRIPTION NDL4105A, NDL4105-78, NDL4105-88 are AIGaAs light emitting diodes. These LEDs have suitable wavelength variation for
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NDL4105A
NDL4105A,
NDL4105-78,
NDL4105-88
NDL4105-78
780nm
NDL4105
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Untitled
Abstract: No abstract text available
Text: m /f GaAs LIGHT-EMITTING DIODE “PILL PACK” 62000 TYPE GS 1140 OPTOELECTRONIC PRODUCTS DIVISION * HIGH INTENSITY GaAIAs VERSIONS AVAILABLE MINIATURE HIGH EFFICIENCY LED GLASS/CERAMIC/KOVAR HERMETIC PACKAGE Mii 62000 is a P-N GaAs Infrared Light Emitting Diode in a package designed to be mounted in a double-clad
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MIL-S-19500.
bll2b40
D0D1071
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN189L GaAIAs Infrared Light Em itting Diode Unit : mm Light source for distance m easuring system s • I]1 0.4 M ark Red /'o.eto.i F eatures • • • • High-power output, high-efficiency : PQ = 5.5 mW (typ.)
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LN189L
100Hz
100mA
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