gardasoft
Abstract: indium gallium arsenide phosphide UV-LED 680nm 475nm photocontrol 320nm power led 530nm PP500 Orange605nm
Text: Light Emitting Diodes - A Primer Russ Dahl, Opto Diode Corporation From the Web Exclusive, "Seeing the True Colors of LEDs." Light emitting diodes LEDs are semiconductors that convert electrical energy into light energy. The color of the emitted light depends on the semiconductor material
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360nm
950nm.
320nm
360nm
PP500
gardasoft
indium gallium arsenide phosphide
UV-LED
680nm
475nm
photocontrol
320nm power led
530nm
Orange605nm
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Untitled
Abstract: No abstract text available
Text: BACK SA8808/16/24 sames Preliminary SA8808/16/24 8, 16, 24 LIGHT EMITTING DIODE DRIVER FEATURES n Light Emitting Diode intensity programmable using a single resistor n Automatic lamp test facility on reset RST n Minimal external components n n Parallel (demultiplexed) Microprocessor interface (Intel and Motorola
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SA8808/16/24
SA8808/16/24
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Untitled
Abstract: No abstract text available
Text: OKI electronic components OLP124 _ GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD124 is a high-output GaAs infrared light emitting diode sealed with a transparent resin in a TO-18 metal case. Its light emission wavelength peaks at 940 nm. Because of its high reliability, the
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OLD124
OLD124
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Untitled
Abstract: No abstract text available
Text: K2P002^-27-32 OKI electronic components QLD2203_ GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD22Q3 is a very high-output GaAIAs infrared light emitting diode sealed with an achromatic transparent epoxy resin. Its light emission wavelength peaks at 910 nm. The OLD22D3 can be the
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K2P002
QLD2203_
OLD22Q3
OLD22D3
OLD22Q3
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OLD222
Abstract: No abstract text available
Text: OKI electronic components OLD222_ GaAs infrared Light Emitting Diode GENERAL DESCRIPTION The OLD222 is a high-output GaAlAs infrared light emitting diode sealed with a glass lens in a To18 case. Its light emission wavelength peaks at 910 ran. Because of its high reliability, the OLD222
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OLD222_
OLD222
100mA
OLD222
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old123
Abstract: No abstract text available
Text: OKI electronic components GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD123 is a high-output GaAs infrared light emitting diode sealed with a flat glass in a TO-18 metal case. Its light emission wavelength peaks at 940 nm. Beause of its high reliability, the OLD! 23
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OLD123
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Untitled
Abstract: No abstract text available
Text: K2P0Ült>-27-32 O K I electronic components OLP222 H_ GaAIAs Infrared Light Emitting Diode with Non-Spherical Surface Lens GENERAL DESCRIPTION The OLD222H is a high-output GaAIAs infrared light emitting diode sealed with a glass lens in a
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OLP222
OLD222H
OLD222H
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TA 8202 K
Abstract: 1000 nm light emitting diode OLD2202
Text: H2P0024-27-32 O K I electronic components OLD22Q2 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD22Q2 is a very high-output GaAIAs infrared light emitting diode sealed with an achromatic transparent epoxy resin. Its light emission w avelength peaks at 910 nm. The OLD22G2 can be the
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H2P0024-27-32
OLD22Q2
OLD22Q2
OLD22G2
Ifrm/100
TA 8202 K
1000 nm light emitting diode
OLD2202
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Untitled
Abstract: No abstract text available
Text: I-2PIW14-27-32 OKI electronic components 0L P125_ GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD125 is a high-output GaAs infrared light emitting diode sealed with a transparent epoxy resin in a ceramic case. Its light emission wavelength peaks at 940 n m . Because of its high reliability,
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I-2PIW14-27-32
OLD125
940nm
OLD125
lfRM/75
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eh200
Abstract: No abstract text available
Text: F:2P0I. US-27-33 O K I electronic OLD224 components GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD224 is a high-output GaAIAs infrared light emitting diode sealed with a transparent epoxy resin in a TO-18 case. Its light emission wavelength peaks at 910 nm. Because of its high reliability,
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US-27-33
OLD224
OLD224
eh200
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OCS32
Abstract: No abstract text available
Text: !:2STh139-27-33 OKI electronic components 0C S32 Optical PNPN Switches GENERAL DESCRIPTION The OCS32 is an optical PNPN switch, combining an infrared light emitting diode and PNPN elements photothyristors in a single 8-pin plastic package. The GaAs light emitting diode acts as
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2STh139-27-33
OCS32
OCS32
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910nm
Abstract: No abstract text available
Text: O K I electronic components 0LD225 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION T heO L D 225 is a high-output GaAIAs infrared light emitting diode sealed w ith a transparent epoxy resin in a ceramic case. Its light emission wavelength peaks at 910 ran. The O LD 225 can have the
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OLD225
910nm
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photo sensor pin diagram
Abstract: transistor 1BT transistor 1BT 12 nIc 4 PHOTO SENSOR of application OCS33 vak-50v 1Bt 60
Text: OKI electronic components OCS33 Optical PNPN Switches GENERAL DESCRIPTION The OCS33 is an optical PNPN switch, combining a GaAs infrared light emitting diode and a silicon PNPN photo sensor in a single 8-pin plastic package. The GaAs light emitting diode acts as the input
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OCS33
b724S40
OCS33
72M2M0
photo sensor pin diagram
transistor 1BT
transistor 1BT 12
nIc 4
PHOTO SENSOR of application
vak-50v
1Bt 60
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4 PIN TO46 package
Abstract: TO-46-type
Text: E2P0021-27-32 O K I electronic components OLD232 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD232 is a high-output GaAIAs infrared light emitting diode sealed with a glass lens in a high ly reliable metal can on a TO-46 type stem. Its light emission w ave peaks at 910 run.
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E2P0021-27-32
OLD232
OLD232
4 PIN TO46 package
TO-46-type
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OLD122
Abstract: OLD122B OLD122C OLD122-C
Text: K r o o n -27-33 O K I electronic components OLP122 GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD122 is a high-output GaAs infrared light emitting diode sealed with a glass lens in a TO-18 metal case. Its light emission wavelength peaks at 940 nm. Because of its high reliability, the OLD122
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OLP122
OLD122
940nm
OLD122
OLD122B
OLD122C
OLD122-C
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Untitled
Abstract: No abstract text available
Text: OKI electronic components OCS33 Optical PNPN Switches G EN ER A L D ESCRIPTIO N The OCS33 is an optical PNPN switch, combining a GaAs infrared light emitting diode and a silicon PNPN photo sensor in a single 8-pin plastic package. The GaAs light emitting diode acts as the input
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OCS33
OCS33
/01HS
2424G
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Untitled
Abstract: No abstract text available
Text: F.2 Pt X>2 2 - 2 7 ~3 3 O K I electronic components OLD232-2 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD232-2 is a high-output GaAIAs infrared light emitting diode sealed with a glass lens in a highly reliable metal can on a TO-46 type stem . Jts light emission wavelength peaks at 910 nm.
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OLD232-2
OLD232-2
2D232-2
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OLD2203
Abstract: light emitting diode general light emitting diode configuration QLD2203 Infrared Emitting Diode 910nm
Text: O K I electronic components QLD2203 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION TheOLD2203 is a superhigh-output GaAIAs infrared light emission diode sealed with an achromatic transparent epoxy resin. Its light emission wave peaks at 910 nm. The OLD2203 can be the most
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QLD2203
TheOLD2203
OLD2203
24E40
OLD22Q3
Ifm/100
b72M240
light emitting diode general
light emitting diode configuration
QLD2203
Infrared Emitting Diode
910nm
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OLD2202
Abstract: 1000 nm light emitting diode 910nm 5424D
Text: O K I electronic components OLP22Q2 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION TheOLD2202 is a superhigh-output GaAIAs infrared light emission diode sealed with an achromatic transparent epoxy resin. Its light emission wave peaks at 910 nm. The OLD2202 can be the most
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OLP22Q2
TheOLD2202
OLD2202
L7542M0
OLD22Q2
b7E424D
Ifm/100
b7S4S40
1000 nm light emitting diode
910nm
5424D
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Untitled
Abstract: No abstract text available
Text: O K I electronic components QLD2202 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION TheC>LD2202 is a superhigh-output GaAIAs infrared light emission diode sealed with an achromatic transparent epoxy resin. Its light emission wave peaks at 910 nm. The OLD2202 can be the most
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QLD2202
LD2202
OLD2202
L72424Ã
b724240
L724240
OLD22Q2
b754240
OLD2202
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Untitled
Abstract: No abstract text available
Text: O K I electronic components OLP234 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD234 is a high-output GaAIAs infrared light emission micro-diode sealed with a transparent epoxy resin in a TO-46 case. Its light emission wave peaks at 910 nm.
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OLP234
OLD234
OLD234
72424D
b724240
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Untitled
Abstract: No abstract text available
Text: OKI electronic components OLD122 GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD122 is a high-output GaAs infrared light emission diode sealed with a glass lens in a TO18 metal case. Its light emission wave peaks a t940 nm. Because of its sharp directivity, multiple units
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OLD122
940nm
72424G
0LD122
2424G
OLD122
b724240
lfM/100
b72424Q
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Untitled
Abstract: No abstract text available
Text: O K I electronic components QLD2210_ GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION T he O LD 2210 is a high output GaAIAs infrared light em itting micro-diode sealed with a collimator lens com posed of transparent epoxy resin. FEATURES
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QLD2210_
QLD2210
OLD2210
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oki old122
Abstract: OLD122 OLD122C
Text: OKI electronic components OLP1 2 2 _ GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD122 is a high-output GaAs infrared light emission diode sealed with a glass lens in a TO18 metal case. Its light emission wave peaks at940 nm. Because of its sharp directivity, multiple units
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OLD122_
OLD122
at940
940nm
b72424G
OLD122
Ifm/100
b724540
oki old122
OLD122C
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