Untitled
Abstract: No abstract text available
Text: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such
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DK-8381
KLED0002E01
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LN69
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode Unit : mm Emitted light spectrum suited for silicon photodetectors : λP = 940 nm typ. Good radiant power output linearity with respect to input current Long lifetime, high reliability
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LN69
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode Unit : mm Emitted light spectrum suited for silicon photodetectors : λP = 940 nm typ. Good radiant power output linearity with respect to input current Long lifetime, high reliability
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100Hz
LN69
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100v 3A silicon controlled rectifier
Abstract: E91231 IS605 IS6051 rectifier 400V 5A light activated scr
Text: IS6051 LOW INPUT CURRENT INFRA-RED EMITTING DIODE & LIGHT ACTIVATED SCR Dimensions in mm 2.54 APPROVALS l UL recognised, File No. E91231 7.0 6.0 7.62 max. DESCRIPTION The IS6051 is an optically coupled isolator consisting of infrared light emitting diode and a
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IS6051
E91231
IS6051
DB92611-AAS/A2
100v 3A silicon controlled rectifier
E91231
IS605
rectifier 400V 5A
light activated scr
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LN172
Abstract: Infrared Emitting Diode DSA003761
Text: Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm ø4.2 +0.2 –0.1 Features High-power output, high-efficiency : PO = 12 mW typ. Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) 2.4±0.3 12.7 min.
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LN172
100Hz
LN172
Infrared Emitting Diode
DSA003761
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LN172
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm ø4.2 +0.2 –0.1 Features High-power output, high-efficiency : PO = 12 mW typ. Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) 2.4±0.3 12.7 min.
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LN172
10nductor
LN172
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AVERAGE QUASI PEAK AND PEAK DETECTOR
Abstract: nixie tube circuit
Text: • PRODUCT EMITTING DIODES LIGHT EMITTING DIODES APPLICATION NOTES Among photo semiconductor devices, the light emitting diode only exists as a P-N junction
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN66 NC GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency :P0 = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors
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100mA
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IR Blue Light infrared
Abstract: LN66
Text: Panasonic Infrared Light Emitting Diodes LN66 NC GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency :P0 = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors
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100mA
IR Blue Light infrared
LN66
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN172 GaAIAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : A,P = 900 nm (typ.)
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LN172
100mA
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LNA2801L
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 6 m W /sr min. • Light emitting spectrum suited for silicon photodetectors
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LNA2801L
LNA2801L
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency : Ie = 6 mW /sr min. Light emitting spectrum suited for silicon photodetectors
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LNA2801L
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LN66A
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN66A G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency : Ie = 9 mW /sr min. Light emitting spectrum suited for silicon photodetectors
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LN66A
0102Q.
LN66A
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency : Ie = 6 mW /sr min. Light emitting spectrum suited for silicon photodetectors
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LNA2801L
0102Q.
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN66 G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency : PQ = 8 mW typ. Light emitting spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current
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0102Q.
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LN69
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 3.5 m W /sr min. • Light emitting spectrum suited for silicon photodetectors : XP = 940 nm (typ.)
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LN172
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN172 GaAIAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : X P = 900 nm (typ.)
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LN172
100mA
100Hz
LN172
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LN68
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN68 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 5 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 950 nm (typ.)
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN69 G aAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : Ie = 3.5 mW /sr min. • Light emitting spectrum suited for silicon photodetectors : A,P = 940 nm (typ.)
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN68 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 5 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 950 nm (typ.)
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photo sensor pin diagram
Abstract: transistor 1BT transistor 1BT 12 nIc 4 PHOTO SENSOR of application OCS33 vak-50v 1Bt 60
Text: OKI electronic components OCS33 Optical PNPN Switches GENERAL DESCRIPTION The OCS33 is an optical PNPN switch, combining a GaAs infrared light emitting diode and a silicon PNPN photo sensor in a single 8-pin plastic package. The GaAs light emitting diode acts as the input
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OCS33
b724S40
OCS33
72M2M0
photo sensor pin diagram
transistor 1BT
transistor 1BT 12
nIc 4
PHOTO SENSOR of application
vak-50v
1Bt 60
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Infrared Emitting Diode
Abstract: LN66
Text: Panasonic Infrared Light Emitting Diodes LN66 L GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency :P0 = 8 mW (typ.) • Light emitting spectrum suited for silicon photodetectors • G ood radiant pow er output linearity with respect to input current
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100mA
Infrared Emitting Diode
LN66
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LN175
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN175 GaAIAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 900 nm (typ.)
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LN175
LN175
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN166 G aAs Infrared Light Emitting Diode 05.0+0.2 For optical control systems • Features • • • • • High-power output, high-efficiency : Ie = 10 mW /sr min. Light emitting spectrum suited for silicon photodetectors
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LN166
100Hz
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