litton cpu
Abstract: MX 232 military multichip litton military mcm cpu MCP-96 cpu guidance litton mcm military mcm I960 mx
Text: MILITARY MULTICHIP MODULES LITTON GUIDANCE & CONTROL SYSTEMS i960 MC/MX CPU Computers Using Silicon Substrate MCMs • ■ ■ ■ ■ ■ ■ ■ ■ ■ 10-38 MIPs Microminiaturized Computers With Processor, Memory and I/O in Pin-Compatible Multichip
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MCP96)
MXP-96)
16-Bit
RS-232
MXP-96
MCP-96
litton cpu
MX 232
military multichip
litton
military mcm cpu
cpu guidance
litton mcm
military mcm
I960 mx
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elmwood sensors ltd
Abstract: elmwood thermal switch saft rectifier ABB sensycon SICK OPTEX elmwood sensors Oscillatek abb entrelec relays Litton Electron Devices microwave tubes Anzac Electronics
Text: S OURCE ESB’ S Last Two Years of M ANUFACTURER N AME C HANGES Specifying and buying parts is hard enough without constant name changes due to manufacturing mergers, acquisitions and company spin-offs. Historically, each regional Electronics Source Book has diligently tracked these changes to save you time and headaches. We're happy to provide this
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BMIC/Ele03
elmwood sensors ltd
elmwood thermal switch
saft rectifier
ABB sensycon
SICK OPTEX
elmwood sensors
Oscillatek
abb entrelec relays
Litton Electron Devices microwave tubes
Anzac Electronics
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID SbE ]> • 5S44SDD 0GDG524 275 ■ LITT Litton LF6872 Solid State 1/4 W att, Low Distortion GaAs FET PRELIMINARY SPECIFICATIONS FEATURES ■ +24 dBm Typical Output Power @ 18GHz ■ 6 dB Typical Compressed Gain @ 18GHz ■ Low 2nd Harmonic Distortion
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5S44SDD
0GDG524
LF6872
18GHz
LF6872
2285-C
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID SbE D • S£L»4EOO DQ0G533 Sflfl ■ L I T T Hton_ LF3850 Solid State 2 Watt Power GaAs FET PRELIMINARY SPECIFICATIONS FEATURES ■ +33 dBm Typical Output Power @ 8GHz ■ 6 dB Typical Compressed Gain @ 8GHz -
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DQ0G533
LF3850
2285-C
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID SbE » 5S4M20D D0GGS3D 5 7 e] Litton IL IT T 7 - J 7 -P 5 - LF3830 1 Watt Power GaAs FET Solid State FEATURES • + 31.5 dBm Typical Output Power @ 8 GHz • 7 dB Typical Compressed Gain @ 8 GHz • 0.5 Micron Ti/Pt/Au Recessed Gate
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5S4M20D
LF3830
LF3830
8510B
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Untitled
Abstract: No abstract text available
Text: l I T T °N ÏNB/LITTON SOLI» Litton SbE D • 55442GG 00004^5 b44 ■ LITT PRODUCT ANNOUNCEMENT Solid State Division 140 GHz InP GUNN DIODE • LOW COST POWER AT VERY HIGH FREQUNCY • RELIABLE SOLID STATE POWER SOURCE • HIGH EFFICIENCY, LOW VOLTAGE AND CURRENT
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55442GG
LST-9123S1
T-9123S
123S3
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID Litton 5bE D WÊ SS442DD □□□□SED b2T « L I T T Low-Distortion/Medium Power M icrowave GaAs FET Electron Devices D-6828 Preliminary Specifications FEATURES • O utput Power 19 dBm @ 18 GHz ■ 1dB Power Gain 7 dB @ 18 g h z
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SS442DD
D-6828
D-6828
2285C
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Untitled
Abstract: No abstract text available
Text: 4 • V 11 J. IM J/ / L. ± I LITTON IND/LITTON SOLID l_ X Litton SbE » ■ SSM42GD □□□□SGb SST « L I T T Low Noise/M edium Power M icrow ave GaAs FET Electron Devices D-2501 Preliminary Specifications FEATURES ■ Noise Figure 2.2 dB @ 8 ghz ■ Gain a t NF 9.0dB @ 8 g h z
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SSM42GD
D-2501
D-2501
2285C
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID Litton SbE D 554M200 D D D D S m 32b « L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3501 Preliminary Specifications FEATURES - • O utput Power 23 dBm @ 8 g h z ■ - UM. 50 ^DRAIN 1/ / / / / / / / / / 7T///7 ///////7 7 7 7 7 1
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554M200
D-3501
D-3501
2285C
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litton
Abstract: Litton Solid State
Text: LITTON IND/LITTON SOLID Litton SbE D SSMMSDD O D O O S m 32b • L ITT Medium Power M icrow ave GaAs FET Electron Devices D-3501 Preliminary Specifications FEATURES -62070 h ■ O utput Power 23 dBm @ 8 g h z ■ 7-7 i r i DRA IN 1/ / / / / / / / / / 7 7 7 / / / / / / / / / / / / / / / I
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D-3501
2285C
litton
Litton Solid State
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Litton LN-200
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID Litton SbE D • 5S44E00 00DDS2Ö RIO ■ L I T T Dual G a te M icrow ave GaAs FET Electron Devices D-2730 Preliminary Specifications FEATURES MAG 16 d B 18 GHz - Noise Figure 2.5 dB @ 45 18 Ghz » - 430 50- t 45 t 50 Gain at NF 13 dB @ 18 Ghz
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5S44E00
00DDS2Ã
D-2730
30CVn
D-2730
2285C
Litton LN-200
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID Litton SbE D • 5544200 0000522 4T2 ■ L I T T Low -D isto rtion /M ed iu m Pow er M ic ro w a v e G a A s FET Electron Devices D-6836 Preliminary Specifications FEATURES @ 18 g h z ■ O utput Power 21 ■ IdB Power Gain 6.5 dB @ 18 GHz
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D-6836
D-6836
amplifie07
2285C
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID, 5bE D ton • 5544200 0000510 T71 * L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3814 Preliminary Specifications FEATURES ■ Output Power 28 dBm @ 8 ghz ■ 1dB Power Gain 9 dB @ 8 g h z ■ 0.5 x 1400 nm Ti/Pt/Au G ate Two Cells
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D-3814
D-3814
2285C
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID SbE D 5544200 ODDQMTb SÔD • LITT J Z - ([ ■ GUNN DIODES HIGH FREQUENCY 22 to 110 GHz FEATURES • • • • • • GaAs and InP Devices High Efficiency Low Package Parasitics High Reliability Low FM and AM Noise Good Power and Frequency Stability
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100nsec.
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TRANSISTOR A107
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID Linon SbE D • 5S4M200 DG0DS12 553 « L I T T Dual Gate Microwave GaAs FET Electron Devices D-2704 Preliminary Specifications FEATURES ■ MAG 18 dB @ 8 GHz ■ Noise Figure 2 .5 dB @ 8 Ghz ■ Gain at NF 13 dB @ 8 Ghz ■ Mixer, Switch, AGC, and Temperature
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5S4M200
DG0DS12
D-2704
340nm
D-2704
2285C
TRANSISTOR A107
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litton
Abstract: Litton Solid State D-0777 ultra low noise 12GHz radar 77 ghz receiver
Text: LITT ON I N D / LI TT ON SOLID SbE D S5 4 M B 0 Q 0[][]055b 04fi « L I T T Litton Ultra Low-Noise M ic ro w a v e G aA s FET Electron Devices D-0777 Preliminary Specifications 440 FEATURES 280 • Noise Figure 1.9 dB @ < 46 I 18 g h z Y77A ■ Gain at NF 8 dB @ 18 GHz
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S54MB0Q
D-0777
D-0777
2285C
litton
Litton Solid State
ultra low noise 12GHz
radar 77 ghz receiver
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Untitled
Abstract: No abstract text available
Text: SLE T> LITTON IND/LITTON SOLI] Litton • SS442GD DDDGS1D 7ÖG ■ L I T T Low N oise/M edium Power M icrow ave GaAs FET Electron Devices D-2503 Preliminary Specifications FEATURES ■ Noise Figure 3.5 ■ Gain a t NF 6.5 ■ 0.50 X 280 um Ti/Pt/Au G ate
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SS442GD
D-2503
D-2503
2285C
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S3V 83
Abstract: S3V 75 S3V 05 S3V 77 Litton LN-200 S3V 09 R/S3V 92
Text: LI T T O N I N D / L I T T O N SO LI » Linon SbE D • SSMMHDG OQGOSOM 4Ö7 « L I T T Low-Noise M icrow ave GaAs FET Electron Devices D-1503 Preliminary Specifications 440 FEATURES 280 ■ Noise Figure 2.6 dB @ 18 GHz 94 Y777\ DRAIN ■ Gain a t NF 6.5 dB @ 18 GHz
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D-1503
D-1503
2285C
S3V 83
S3V 75
S3V 05
S3V 77
Litton LN-200
S3V 09
R/S3V 92
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transistor af18
Abstract: litton Litton Solid State D-2503 Solid State Microwave C band FET transistor s-parameters
Text: LITTON IND/LITTON SOLI] Litton SLE ]> • 55M42DD ODOGS1Q 7fiD ■ L I T T Low Noise/M edium Power M icrow ave GaAs FET Electron Devices D-2503 Preliminary Specifications 440 FEATURES 280 ■ Noise Figure 3.5 ■ Gain a t NF 6.5 dB @ 18 g h z 94 dB @ Y77
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55M42DD
D-2503
D-2503
devices26
2285C
transistor af18
litton
Litton Solid State
Solid State Microwave
C band FET transistor s-parameters
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litton
Abstract: Litton Solid State transistor 2501 D2501 Litton Systems 250-1 MAG D-2501 RF FET TRANSISTOR 3 GHZ VDS35 55M4S
Text: J— X ' V il X 1 H J / / L 1 I LITTON IND/LITTON SOLI] Litton Electron Devices SbE D m 55ML42GD □□ODSDb 55T • L I T T Low Noise/Medium Power Microwave GaAs FET D-2501 Preliminary Specifications FEATURES ■ Noise Figure 2.2 dB @ 8 ghz ■ Gain at NF 9.0dB @ 8 g h z
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SSM42GD
D-2501
I--190-
D-2501
2285C
litton
Litton Solid State
transistor 2501
D2501
Litton Systems
250-1 MAG
RF FET TRANSISTOR 3 GHZ
VDS35
55M4S
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Untitled
Abstract: No abstract text available
Text: L I TT ON I N D / L I T T O N SO LI D SbE D Litton • 5 5 4 4 S D D O O D G S l b ITT « L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3807 Preliminary Specifications Lett Side FET Right Side FET FEATURES ■ Output Power 25 ■ 1dB Power Gain 10 dB @ 8 g h z
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D-3807
D-3807
2285C
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Diode LT 9250
Abstract: LT 9250 0/Diode LT 9250
Text: LITTON IND/LITTON SOLI» SbE D • SSMMSDG OODDSOG Ö31 ■ L I T T 7 - Ö / - Ö GALLIUM ARSENIDE CW IMPATT DIODES 9250 Series • • • • 5-21 GHz High C W Output Power High Efficiency— Typically 1 8 -2 0 % Burnout Resistant to Circuit Mismatches High Reliability— Greater than 106 hrs M TTF
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-3-48UNC-2A
Diode LT 9250
LT 9250
0/Diode LT 9250
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLI» SbE » • 5544200 0000502 b04 ■ LITT GALLIUM ARSENIDE PULSED IMPATT DIODES 9251 Series • • • • • • 5-21 GHz High Peak Output Power High Efficiency— Typically 18-20% Burnout Resistant to Circuit Mismatches High Reliability— Greater than 106 hrs M TTF
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554M5D0
000G503
N57/N58
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D2502
Abstract: No abstract text available
Text: U lH ’ON IN D /L IT TO N SOLID il I I A I I I 5bE D • 5 5 4 4 2 0 0 DGDD5GÛ DES ■ L I T T Low Noise/Medium Power Microwave G aA s FET Electron Devices D-2502 Preliminary Specifications -380- FEATURES ■ -250► 40 - Noise Figure 2.2 de @ 8 [77777 ghz
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D-2502
IT777JlY///h77mh
D-2502
2285C
D2502
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