lm 234 diode
Abstract: LM175 F238 IHW40N60R
Text: IHW40N60R IH-series Reverse conducting IGBT C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior
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IHW40N60R
J-STD-020
JESD-022
lm 234 diode
LM175
F238
IHW40N60R
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IHW40N60R
Abstract: lm 234 diode N238 F238 6284n lm6040
Text: IHW40N60R IH-series Reverse conducting IGBT C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior
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IHW40N60R
J-STD-020
JESD-022
IHW40N60R
lm 234 diode
N238
F238
6284n
lm6040
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Common Cathode RGB LEDS 5mm
Abstract: multicolor led 2-pin 5mm OPA731 b45 smd diode cool white led super bright 1 watt OPA729G LED-120A-1400C-24F OPA741 B45 diode smd OVLENS234
Text: Product Selection Guide Visible LEDs and Assemblies A Part Of Everyday Technology Category VLED Description Page # 3 Components Through-hole High Flux Surface Mount White 6 5-8 5, 6 & 8 RGB 7 Lednium 8 Assemblies 9 & 10 Lens 15° & 23° Package Drawings Page 2
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CC-0407-02
Common Cathode RGB LEDS 5mm
multicolor led 2-pin 5mm
OPA731
b45 smd diode
cool white led super bright 1 watt
OPA729G
LED-120A-1400C-24F
OPA741
B45 diode smd
OVLENS234
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FP35R12KT4
Abstract: No abstract text available
Text: Technische Information / technical information FP35R12KT4 IGBT-Module IGBT-modules EconoPIM 2 Modul mit Trench/Feldstopp IGBT4 und EmCon4 Diode EconoPIM™2 module with trench/fieldstop IGBT4 and EmCon4 diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data
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FP35R12KT4
FP35R12KT4
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FP35R12KT4
Abstract: 32L0 IR 50H
Text: Technische Information / technical information FP35R12KT4_B11 IGBT-Module IGBT-modules EconoPIM 2 Modul PressFIT mit Trench/Feldstopp IGBT4 und EmCon4 Diode EconoPIM™2 module PressFIT with trench/fieldstop IGBT4 and EmCon4 diode IGBT-Wechselrichter / IGBT-inverter
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FP35R12KT4
32L0
IR 50H
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BU 103t transistor
Abstract: IC LM234 134H-6 diode cross reference 1N457 lm3341 lm 234 diode
Text: Semiconductor May 1998 LM134/LM234/LM334 3-Terminal Adjustable Current Sources General Description LM 234-3 and LM 134-6/LM 234-6 are specified as true te m perature sensors with guaranteed initial accuracy of ±3°C and ±6°C , respectively. These devices are ideal in rem ote
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LM134/LM234/LM334
134/LM
234/LM
BU 103t transistor
IC LM234
134H-6
diode cross reference 1N457
lm3341
lm 234 diode
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LM134-LM234
Abstract: 3773 so-8 LM234 14 pin 1N457 tempco 2N4250 LM134 LM234 LM334 LM334M M08A
Text: LM134/LM234/LM334 National Semiconductor LM 134/LM 234/LM 334 3-Terminal Adjustable Current Sources General Description LM 234-3 and L M 13 4 -6 /L M 23 4 -6 are specified as tru e te m perature sensors w ith guaranteed initial accura cy o f ± 3°C and ± 6 * 0 , respectively. Th e se devices are ideal in rem ote
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LM134/LM234/LM334
LM134/LM234/LM334
tl/h/5697â
TL/H/5697-22
lm134.
tl/h/5697-23
tl/h/5697-11
0CH37fll
LM134-LM234
3773 so-8
LM234 14 pin
1N457 tempco
2N4250
LM134
LM234
LM334
LM334M
M08A
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IC LM234
Abstract: ET227
Text: a t i o n a l S e m i c o n d u c t o r LM134/LM234/LM334 3-Terminal Adjustable Current Sources General Description LM 234-3 and LM 134-6/LM 234-6 are specified as true te m perature sensors with guaranteed initial accuracy of ±3°C and ±6°C , respectively. These devices are ideal in rem ote
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LM134/LM234/LM334
134/LM
234/LM
IC LM234
ET227
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Untitled
Abstract: No abstract text available
Text: r Z 7 S G S -T H O M S O N LM134 LM 234-LM 334 THREE TERMINAL ADJUSTABLE CURRENT SOURCES • ■ ■ ■ OPERATES from 1 V to 40 V 0.02 % V CURRENT REGULATION PROGRAMMABLE from 1 |a.A to 10 mA ± 3 % INITIAL ACCURATY D E S C R IP T IO N The LM134/LM234/LM334 are 3-terminal adjusta
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LM134
234-LM
LM134/LM234/LM334
LM134,
LM234,
LM334.
134-LM
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LM334 equivalent transistor
Abstract: LM334 lmi34 LM134Z LM234 C101 to-92 LM134 Thomson transistor
Text: LM134 LM234 LM334 THOMSON SEMICONDUCTORS THREE TE R M IN A L ADJUSTABLE CURRENT SOURCES The L M 134/ LM 234/ LM334 are 3-term inal adjustable current sources charac terized by : — an operating current range o f 10000 : 1 — an excellent current regulation
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LM134
LM234
LM334
LM134/LM234/LM334
LM134/LM234/LM334.
LM134
LM234
LM134.
LM234.
LM334 equivalent transistor
LM334
lmi34
LM134Z
C101 to-92
Thomson transistor
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Untitled
Abstract: No abstract text available
Text: Red Laser Diode DL-3148-033/-034/-234 Features • • • • Tolerance : ± 0 .2 Unit : mm Package Short wavelength : 635 nm Typ. Low threshold cu rren t: Ith = 40 mA (Typ.) High operating temperature : 5mW at 50°C Small package : 0 5.6mm Applications
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L-3148-033/-034/-234
-033above
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16*32 LED Matrix
Abstract: LB234 2 x 16 led dot matrix led dot matrix 8 by 8 led matrix 16X32 Dot Matrix Displays 5 x 8 led dot matrix 8 x 8 led dot matrix
Text: Lieht Emitting Diodes Chip LEDs- 216 LED Numeric Displays- 234 Mgh luminance chip LEDe with reflector SM L 216 Single Digit LED Numeric Displays (LA) 234 M M moWed Package chip LED* (SM L)
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LM234P
Abstract: lm 234 diode LM234 14 pin
Text: r z 7 Ä 7# S C S -T H O M S O N L M 134 L M 2 3 4 -L M 334 THREE TERMINAL ADJUSTABLE CURRENT SOURCES • i ■ ■ OPERATES from 1 V to 40 V 0.02 % V CURRENT REGULATION PROGRAMMABLE from 1 |jA to 10 mA ± 3 % INITIAL ACCURATY DESCRIPTIO N The LM134/LM234/LM334 are 3-terminal adjusta
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LM134/LM234/LM334
LM134/LM234/LM9
134-LM
234-LM
EIUIOT15
LM234P
lm 234 diode
LM234 14 pin
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Untitled
Abstract: No abstract text available
Text: I_iShit Emitting Diodes C h ip L E D s - 216 L E D N um eric D isp la y s - 234 Mgh lum inance chip LEDs w ith reflecto r SM L 216 Single Digit LED Numeric Displays (LA)
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Untitled
Abstract: No abstract text available
Text: 1SV262 TOSHIBA 1 SV2 6 2 TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING. SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V / C25V = 12.5 Typ. Low Series Resistance : rs = 0.6ft (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package
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1SV262
C2V/C25V
C25V/C28V
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LM016L
Abstract: LM016H LM315XBN hitachi lcd lm 234 LM213XB LCD LM016L LM213B LM313XBN LM238XB HITACHI LCD lm016L
Text: ^ H IT A C H I' UQUIDCRYSIAL DISPLAY MODULES AND DEVCES The Clear Advantage In LCD Technology 4 ♦ Unsurpassed Technology, Resources, and Commitment Make Hitachi Your Best L C D Partner Selecting the right display for your product is one of the most important
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d 331 TRANSISTOR equivalent
Abstract: C 3311 transistor la 4142 74143
Text: SA MSUNG SEM ICO NDUCTOR INC 14E D | 7Tb4142 00071,5*1 4 I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5010 C o l o r t v h o r iz o n t a l o u t p u t APPLICATIONS DAMPER DIODE BUILT IN High Collector-Bass Voltage VCbo =1500V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)
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7Tb4142
KSD5010
GQG77fe
d 331 TRANSISTOR equivalent
C 3311 transistor
la 4142
74143
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Untitled
Abstract: No abstract text available
Text: GaA fA s RED LIGHT EMITTER TLRA280 TLRA280 Unit in mm LED FOR PLASTIC FIBER • Luminous spectra are suited to plastic fiber. : /lp = 660nm (TYP.) • High coupling efficiency with fiber : Pf= —4.0dBm (TYP.) • High speed application is possible. : fc = 3MHz (TYP.)
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TLRA280
TLRA280)
660nm
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DA218S
Abstract: A223D DA226U DAN217
Text: 4 $ * DA203/DA204K/DA204U/DA210S/DA216 DA218S/DAN217/DA221 /OA223/DA223K/DA226U K /D io d es - D A 203/D A 204K /D A 204U /D A 21 OS D A 216/D A 218S /D A N 217/D A 221 D A 223/D A 223K /D A 226U - > y K r u - c Silicon Epitaxial Planar Dual Diode Arrays * W fi'tfiiE I/'D im e n s io n s U n it: mm
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DA203/DA204K/DA204U/DA210S/DA216
DA218S/DAN217/DA221
/OA223/DA223K/DA226U
203/D
216/D
217/D
223/D
A218S
DA218S
A223D
DA226U
DAN217
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diode lt 247
Abstract: NTE9808
Text: N T E E LECTRONI CS INC 55E b M3 1 2 S1 Q0 Q5 0 e 5 » 131 • N T E IN TEG l DIODE TRANSISTOR LOGIC) Dual J-K Flip-Flop 14-Lead DIP, See Dlag. 247 (Power Drain = 28/34mA Max) Quad, 2-Input Buffer 14-Lead DIP, See Dlag. 297 Hex Inverter (Output Loading Factor = 25/27)
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14-Lead
28/34mA
34/28mA
T-90-01
diode lt 247
NTE9808
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Untitled
Abstract: No abstract text available
Text: I T T CORP/ I T T CMPNTS 41E D • t b 8 S h 8 4 QOOlMCIi S ■ ITO ZENER DIODES "T-u-O 1N4729 Series 1 W att Glass Zener Diodes in DO-41 Package TA = 25 °C Using the type designations ZM 4729, Z M 4730 and so on, these Zener diodes are available in the MELF package with the same electrical charac
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1N4729
DO-41
1N4730
1N4731
1N4732
1N4733
1N4734
1N4735
1N4736
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BAP64-02
Abstract: v 817 y
Text: DISCRETE SEMICONDUCTORS Æ m SIHIEET BAP64-02 Silicon PIN-diode Objective specification Philips Sem iconductors 1998 Dec 04 PHILIPS Philips Semiconductors Objective specification Silicon PIN-diode BAP64-02 PINNING FEATURES • High voltage, curre n t controlled.
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BAP64-02
BAP64-02
MAM405
v 817 y
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 1PS79SB40 Schottky barrier diode Product specification Supersedes data of 1999 Mar 08 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS79SB40 FEATURES
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1PS79SB40
1PS79SB40
SC-79
115002/00/02/pp8
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS79SB40 FEATURES DESCRIPTION • Low forw ard voltage Planar S chottky barrier diode encapsulated in an S C -79 S O D 523 ultra sm all
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1PS79SB40
SC-79
115002/00/01/pp8
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