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    LN175 Price and Stock

    Ohmite Mfg Co SLN175J230E

    175 WATT OHMICONE 230 OHMS 5%
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    DigiKey SLN175J230E Bulk 7 1
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    Littelfuse Inc JLLN175.X

    FUSE CRTRDGE 175A 300VAC/125VDC
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    DigiKey JLLN175.X Box 4 1
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    Mouser Electronics JLLN175.X 10
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    Newark JLLN175.X Bulk 1
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    RS JLLN175.X Bulk 8 Weeks 1
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    TTI JLLN175.X Box 1
    • 1 $31.19
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    Ozdisan Elektronik JLLN175.X
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    Sager JLLN175.X 1
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    Ohmite Mfg Co LN175J5R3E

    175W 5.3 OHMS VIT 5%
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    DigiKey LN175J5R3E Bulk 4 1
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    Ohmite Mfg Co LN175J5R0

    175W 5 OHMS VIT 5%
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    DigiKey LN175J5R0 Bulk 2 1
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    Ohmite Mfg Co LN175J10RE

    RES CHAS MNT 10 OHM 5% 175W
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    LN175 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LN175 Panasonic GaAlAs Infrared Light Emitting Diode Original PDF
    LN175 Panasonic GaAlAs Infrared Light Emitting Diode Original PDF
    LN175 Unknown The Optical Devices Data Book (Japanese) Scan PDF
    LN175 Panasonic Light Emitting Diodes Scan PDF
    LN175 Panasonic Light Emitting Diodes LED Scan PDF

    LN175 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN175 GaAlAs Infrared Light Emitting Diode For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  High-power output, high-efficiency: PO = 12 mW (typ.)


    Original     		PDF 2002/95/EC) LN175

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LN175 GaAlAs Infrared Light Emitting Diode For optical control systems Unit: mm 1.6±0.1 Rating Unit VR 3 V IF 100 mA IFP 2 A Power dissipation PD 170 mW Operating ambient temperature


    Original     		PDF 2002/95/EC) LN175

    Untitled

    Abstract: No abstract text available
    Text: Light Emitting Diodes LN175 GaAlAs Infrared Light Emitting Diode For optical control systems Unit: mm 1.6±0.1 Rating Unit VR 3 V IF 100 mA IFP 2 A Power dissipation PD 170 mW Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −40 to +100


    Original     		PDF LN175

    PO 102

    Abstract: LN175
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN175 GaAlAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: PO = 12 mW (typ.)  Emitted light spectrum suited for silicon photodetectors: λP = 900 nm (typ.)


    Original     		PDF 2002/95/EC) LN175 PO 102 LN175

    LN175

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN175 GaAlAs Infrared Light Emitting Diode Unit : mm 4.5±0.15 3.5±0.15 Emitted light spectrum suited for silicon photodetectors : λP = 900 nm typ. Good radiant power output linearity with respect to input current Wide directivity : θ = 120 deg. (typ.)


    Original     		PDF LN175 100mA LN175

    Untitled

    Abstract: No abstract text available
    Text: Light Emitting Diodes LN175 GaAlAs Infrared Light Emitting Diode For optical control systems Unit: mm 1.6±0.1 Not soldered 0.8 max. 2-1.2±0.3 • Absolute Maximum Ratings Ta = 25°C Parameter Rating Unit VR 3 V IF 100 mA IFP 2 A Power dissipation PD 170


    Original     		PDF LN175 17nteed

    LN175

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN175 GaAlAs Infrared Light Emitting Diode Unit : mm 4.5±0.15 3.5±0.15 Emitted light spectrum suited for silicon photodetectors : λP = 900 nm typ. Good radiant power output linearity with respect to input current Wide directivity : θ = 120 deg. (typ.)


    Original     		PDF LN175 LN175

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    PHOTO TRANSISTOR 940nm to-18

    Abstract: cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND
    Text: Hall Effect Sensor ICs Panasonic’s Hall IC is a combination of a Hall element, amplifier, Schmidt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier,


    Original     		PDF CND0204ACT-ND CND0215ACT-ND CND0208ACT-ND CND0214ACT-ND CND0209ACT-ND CND0216ACT-ND CND0204ATR-ND CND0215ATR-ND CND0208ATR-ND CND0214ATR-ND PHOTO TRANSISTOR 940nm to-18 cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


    Original     		PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291

    LN175

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN175 GaAIAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 900 nm (typ.)


    OCR Scan     		PDF LN175 LN175

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN175 GaAIAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 900 nm (typ.)


    OCR Scan     		PDF LN175 100mA

    LNC703PS

    Abstract: LN9P01S P50024 LNA4401 PR0022 LN68
    Text: Light Emitting Diodes • Red Light Emitting Diodes for Control Appli­ cation Package Type No. No. 5 LN124W For control If Side view LNA4402F max (V) 40 1 2.6 680 30 PSF02-1 40 2.5 2.2 700 80 02-1 40 1.8 2.2 700 30 5 $ Plastic P5F02-1 LN145W Ap e typ typ


    OCR Scan     		PDF LN124W P5F02-1 PSF02-1 LN155 LN184 LN189L PR002-1 PR002-2 LNC703PS LN9P01S P50024 LNA4401 PR0022 LN68

    3866S

    Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
    Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series


    OCR Scan     		PDF 1020G N12861 N12B62 MN1381 MN13811 MN13821 15P0802 15P5402 58851A 70803A 3866S transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515

    LT3SA

    Abstract: LN9705S LN143 LN7301F P700 LN122WF LN122WS LN124W LN145W P3002.2
    Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1 40


    OCR Scan     		PDF LN143 LN122WS MR02-1 LN122WF MF02-1 LN124W LN145W P5F02-2 PSF02-1 LT3SA LN9705S LN7301F P700 P3002.2

    LN9705

    Abstract: LN143 LN122WF LN122WS LN124W LN145W C3021 MR02-1 mr02 LN9705S
    Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Pac kage Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1


    OCR Scan     		PDF LN143 LN122WS MR02-1 LN122WF MF02-1 LN124W LN145W P5F02-2 PSF02-1 LN9705 C3021 mr02 LN9705S

    S535

    Abstract: No abstract text available
    Text: r*- E M U . NO. O — -ÌW - W 4 } Q R C U ]T s ia 91M. •A ' a s» OPT K M r u * H -««46 » W -M 4 T « r u 2 l lH W O rts î« -a o 4 t ta vts 14 Y ES « VES 1 3.« 1 T 5 T 2M I i3 T i £ 8 I8 - M & I « VES L o st»>ao52 i« rE S W S L I


    OCR Scan     		PDF LN175 97/A3/26 9T/P3/76 S535

    PR002-2

    Abstract: mru2 PR0022
    Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli­ Type No. cation Po Ap Vf min. max. typ. (mA) (mW) t, ,tf typ. typ. (nm ) (deg.) (ns) If No. T O -18 (Sm all) LN143 For control LN122WS (V ) 40 MRÜ2-1 T O -18 (Sm all)


    OCR Scan     		PDF Plastic50 P5002-1 P5002-Ì P5002-1N P5002-2 P3002-1 P3002-2 P5002-4 PR002-2 mru2 PR0022

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202

    B029A

    Abstract: UN039
    Text: Light Emittihg Diodes • Laser Modules ■ infrared Light Emitting Diodes incl. visible (for Fiber, Control) Applica­ tions Package If Type No. Vf max. AL typ. •L a s e r Module for Optical Communication Q tr.tl typ (ns) Type No. Package No. LN7301M005


    OCR Scan     		PDF LN7301M005 122WS LN122WF LN184 LN189L LN9860/P/PR LN189M LN189S LN671 LN51L B029A UN039

    Untitled

    Abstract: No abstract text available
    Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Po V F AL e tr.tf Appli­ Type No. Pac kage If min. max. typ. typ. typ. cation No. (mA) (mW) (V ) (nm) (deg.) (ns) For control For plastic fiber LN143 T0-18 (Small) MR02-1 40 4.5 2.2


    OCR Scan     		PDF LN143 LN122WS LN122WF LN124W LN145W T0-18 MR02-1 MF02-1 P5F02-2