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Untitled Abstract: No abstract text available Text: DIM500GCM33-TS000 IGBT Chopper Module DS6098-1 May 2013 LN30465 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base With AlN Substrates	Original	PDF	DIM500GCM33-TS000 DS6098-1 LN30465) 2400ames
DFM250PXM33-TS000 Abstract: No abstract text available Text: DFM250PXM33-TS000 Fast Recovery Diode Module DS6100-1 May 2013 LN30467 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  High Current Density Enhanced DMOS	Original	PDF	DFM250PXM33-TS000 DS6100-1 LN30467) DFM250PXM33-TS000
Untitled Abstract: No abstract text available Text: DIM500GDM33-TS000 Dual Switch IGBT Module DS6097-1 May 2013 LN30461 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base with AlN Substrates	Original	PDF	DIM500GDM33-TS000 DS6097-1 LN30461)
Untitled Abstract: No abstract text available Text: DIM500GCM33-TS000 IGBT Chopper Module DS6098-1 May 2013 LN30465 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base With AlN Substrates	Original	PDF	DIM500GCM33-TS000 DS6098-1 LN30465) 2400ames
Untitled Abstract: No abstract text available Text: DFM500NXM33-TS000 Fast Recovery Diode Module DS6099-1 May 2013 LN30466 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  High Current Density Enhanced DMOS	Original	PDF	DFM500NXM33-TS000 DS6099-1 LN30466)
Untitled Abstract: No abstract text available Text: DFM250PXM33-TS000 Fast Recovery Diode Module DS6100-1 May 2013 LN30467 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  High Current Density Enhanced DMOS	Original	PDF	DFM250PXM33-TS000 DS6100-1 LN30467) DFM250PXM33-TS000
DFM500NXM33-TS000 Abstract: No abstract text available Text: DFM500NXM33-TS000 Fast Recovery Diode Module DS6099-1 May 2013 LN30466 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  High Current Density Enhanced DMOS	Original	PDF	DFM500NXM33-TS000 DS6099-1 LN30466) DFM500NXM33-TS000
Untitled Abstract: No abstract text available Text: DIM500GDM33-TS000 Dual Switch IGBT Module DS6097-1 May 2013 LN30461 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base with AlN Substrates	Original	PDF	DIM500GDM33-TS000 DS6097-1 LN30461)