Untitled
Abstract: No abstract text available
Text: BGA713N7 Single-Band UMTS LNA 700, 800 MHz Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or
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BGA713N7
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Untitled
Abstract: No abstract text available
Text: BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA751N7
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FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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R09CL0001EJ0100
PX10727EJ02V0PF)
FET marking code g5d
PG2179TB
marking code C3E SOT-89
marking code C1E mmic
marking code C1G mmic
2SC3357/NE85634
PG2163T5N
sot-23 g6g
PC8230TU
marking code C1H mmic
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Untitled
Abstract: No abstract text available
Text: BGA777N7 Single-Band UMTS LNA 2300 - 2700 MHz Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA777N7
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Untitled
Abstract: No abstract text available
Text: BGA711N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA711N7
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Untitled
Abstract: No abstract text available
Text: CMY191 GaAs MMIC Preliminary Datasheet • • • • • • • • Ultralinear Mixer with integrated high IP3i LNA and LO-Buffer for PCS CDMA receiver applications.
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CMY191
24dBm.
96GHz;
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Untitled
Abstract: No abstract text available
Text: MGA-65606 Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-65606 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA with Bypass/ Shutdown mode. The LNA has low noise and high linearity
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MGA-65606
MGA-65606
MGA-65606-BLKG
MGA-65606-TR1G
MGA-65606-TR2G
AV02-2889EN
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Germanium power
Abstract: No abstract text available
Text: Data Sheet, Version 1.2, March 2006 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2006-03-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München
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BGA615L7
D-81541
BGA615L7
BGA619
Germanium power
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MGA-65606
Abstract: No abstract text available
Text: MGA-65606 Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-65606 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA with Bypass/ Shutdown mode. The LNA has low noise and high linearity
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MGA-65606
MGA-65606
MGA-65606-BLKG
MGA-65606-TR1G
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AV02-2889EN
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Rev.1.3, February 2007 BGA615L7 Silicon Germanium GPS Low Noise Amplifier RF & Protection Devices Edition 2007-02-12 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer
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BGA615L7
BGA615
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FR4 Prepreg
Abstract: data sheet germanium diode smd prepreg 1650M AN091 infineon MARKING BS INFINEON BGA615L7 smd marking s22 BGA615 infineon marking BS
Text: D a t a S he et , R e v . 1 . 3 , F e b . 2 00 7 B G A 6 15 L7 Silicon Germanium GPS Low Noise Amplifier S m a l l S i g n a l D i s c r et e s Edition 2007-02-12 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2007.
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BGA615L7
BGA615
FR4 Prepreg
data sheet germanium diode smd
prepreg
1650M
AN091 infineon
MARKING BS INFINEON
BGA615L7
smd marking s22
BGA615
infineon marking BS
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LNA MARKING 4F
Abstract: 7313 28 pin MGA-645T6 marking 6 180 722 10-pin A004R
Text: MGA-645T6 Low Noise Amplifier with Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-645T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass/ Shutdown mode. The LNA has low noise and
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MGA-645T6
MGA-645T6
AV02-0006EN
LNA MARKING 4F
7313 28 pin
marking 6 180 722 10-pin
A004R
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BGA615L7
Abstract: BGA615 1650M data sheet germanium diode smd FR4 Prepreg GERMANIUM prepreg LNA marking CODE R0 LNA marking R0 FR4 Prepreg for RF PCB
Text: Data Sheet, Rev.1.3, February 2007 BGA615L7 Silicon Germanium GPS Low Noise Amplifier RF & Protection Devices Edition 2007-02-12 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer
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BGA615L7
BGA615
BGA615L7
BGA615
1650M
data sheet germanium diode smd
FR4 Prepreg
GERMANIUM
prepreg
LNA marking CODE R0
LNA marking R0
FR4 Prepreg for RF PCB
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LNA marking CODE R0
Abstract: No abstract text available
Text: BGA715N7 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 1.0, 2013-01-29 Preliminary RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG
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BGA715N7
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Untitled
Abstract: No abstract text available
Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-30 RF & Protection Devices Edition 2013-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA231N7
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MGA-64606
Abstract: No abstract text available
Text: MGA-64606 Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-64606 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass/ Shutdown mode. The LNA has low noise and high
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MGA-64606
MGA-64606
MGA-64606-BLKG
MGA-64606-TR1G
MGA-64606-TR2G
AV02-2888EN
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MGA-64606-BLKG
Abstract: MGA-64606 MGA-64606-TR1G
Text: MGA-64606 Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-64606 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass/ Shutdown mode. The LNA has low noise and high
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MGA-64606
MGA-64606
MGA-64606-BLKG
MGA-64606-TR1G
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AV02-2888EN
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RO4850
Abstract: 113 marking code transistor ROHM A004R MCH155 MGA-655T6 c1005* MCH155 MCR 052 PIN 100
Text: MGA-655T6 Low Noise Amplifier with Bypass Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-655T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass mode. The LNA has low noise and high linearity achieved through the use of Avago Technologies’
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MGA-655T6
MGA-655T6
AV02-0322EN
RO4850
113 marking code transistor ROHM
A004R
MCH155
c1005* MCH155
MCR 052 PIN 100
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY65373-11: 1710 to 1785 MHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure Low noise, high linearity systems Macro base stations Small cells VGC
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SKY65373-11:
201764C
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sky77506
Abstract: S2473
Text: DATA SHEET SKY65374-11: 1850 to 1915 MHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure Low noise, high linearity systems Macro base stations Small cells RF_OUT
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SKY65374-11:
S2793a
201966E
sky77506
S2473
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Untitled
Abstract: No abstract text available
Text: MGA-637P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-637P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . This LNA has low noise and high linearity achieved through the
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MGA-637P8
MGA-637P8
CDMA2000x)
AV02-2992EN
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capacitor .22K
Abstract: No abstract text available
Text: MGA-635T6 GPS Low Noise Amplifier with Variable Bias Current and Shutdown Function Data Sheet Description Features Avago Technologies’ MGA-635T6 is a LNA designed for GPS/ISM/Wimax applications in the 0.9-2.4 GHz frequency range. The LNA uses Avago Technologies’s
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MGA-635T6
MGA-635T6
AV01-0188EN
AV02-0215EN
capacitor .22K
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Untitled
Abstract: No abstract text available
Text: MGA-638P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-638P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . This LNA has low noise and high linearity achieved through the
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MGA-638P8
MGA-638P8
CDMA2000x)
AV02-2993EN
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY65375-11: 1.92 to 1.98 GHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure Low noise, high linearity systems Macro base stations Small cells RF_OUT
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SKY65375-11:
S2793a
201755E
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