LNA2801L
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 6 m W /sr min. • Light emitting spectrum suited for silicon photodetectors
|
OCR Scan
|
LNA2801L
LNA2801L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency : Ie = 6 mW /sr min. Light emitting spectrum suited for silicon photodetectors
|
OCR Scan
|
LNA2801L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2801L GaAlAs on GaAs Infrared Light Emitting Diode For optical control systems Unit: mm φ3.6±0.2 5.5±0.2 1.0 4.5±0.3 15.5±1.0 • High-power output, high-efficiency: Ie = 6 mW/sr (min.)
|
Original
|
2002/95/EC)
LNA2801L
|
PDF
|
LNA2801L
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LNA2801L GaAlAs on GaAs Infrared Light Emitting Diode Unit : mm For optical control systems 5.5±0.2 1.0 Features Not soldered 2.0 max. ø3.6±0.2 ø3.0±0.2 High-power output, high-efficiency : Ie = 6 mW/sr min. Good radiant power output linearity with respect to input current
|
Original
|
LNA2801L
LNA2801L
|
PDF
|
LNA2801L
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2801L GaAlAs on GaAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency: Ie = 6 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors
|
Original
|
2002/95/EC)
LNA2801L
LNA2801L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency : Ie = 6 mW /sr min. Light emitting spectrum suited for silicon photodetectors
|
OCR Scan
|
LNA2801L
0102Q.
|
PDF
|
LNA2801L
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LNA2801L GaAlAs on GaAs Infrared Light Emitting Diode Unit : mm For optical control systems 5.5±0.2 1.0 Features Not soldered 2.0 max. ø3.6±0.2 ø3.0±0.2 High-power output, high-efficiency : Ie = 6 mW/sr min. Good radiant power output linearity with respect to input current
|
Original
|
LNA2801L
100Hz
LNA2801L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LNA2801L GaAlAs on GaAs Infrared Light Emitting Diode For optical control systems Unit: mm φ3.6±0.2 VR 3 V IF 50 mA IFP 1 A Power dissipation PD 75 mW Operating ambient temperature Topr −25 to +85 °C Storage temperature
|
Original
|
LNA2801L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LNA2801L GaAlAs on GaAs Infrared Light Emitting Diode For optical control systems Unit: mm φ3.6±0.2 5.5±0.2 1.0 4.5±0.3 15.5±1.0 • High-power output, high-efficiency: Ie = 6 mW/sr min. • Emitted light spectrum suited for silicon photodetectors
|
Original
|
LNA2801L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2801L GaAlAs on GaAs Infrared Light Emitting Diode For optical control systems • Features M Di ain sc te on na tin nc ue e/ d High-power output, high-efficiency: Ie = 6 mW/sr (min.)
|
Original
|
2002/95/EC)
LNA2801L
|
PDF
|
MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
|
Original
|
PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
|
PDF
|
remote control using switch board circuit
Abstract: 1SS355TE-17 2SD1898T100Q remote control transmitter and receiver circuit GP1UM281YK remote control receiver 1SS355TE INFRARED REMOTE CONTROL M16C26A P104
Text: Application Notes M16C/26A Group Sample Program Remote Control Transmission/Reception 1. Summary This sample program performs remote control transmission/reception by using the Renesas Starter Kit for M16C/26A (R0K33026AS000BE). Receiver Received data Transmitter
|
Original
|
M16C/26A
M16C/26A
R0K33026AS000BE)
M16C26A
REJ05B0814-0110
remote control using switch board circuit
1SS355TE-17
2SD1898T100Q
remote control transmitter and receiver circuit
GP1UM281YK
remote control receiver
1SS355TE
INFRARED REMOTE CONTROL
M16C26A
P104
|
PDF
|
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
|
Original
|
P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
|
PDF
|
PHOTO TRANSISTOR 940nm to-18
Abstract: cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND
Text: Hall Effect Sensor ICs Panasonic’s Hall IC is a combination of a Hall element, amplifier, Schmidt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier,
|
Original
|
CND0204ACT-ND
CND0215ACT-ND
CND0208ACT-ND
CND0214ACT-ND
CND0209ACT-ND
CND0216ACT-ND
CND0204ATR-ND
CND0215ATR-ND
CND0208ATR-ND
CND0214ATR-ND
PHOTO TRANSISTOR 940nm to-18
cnd0214a
PNA1801LS-ND
LN58-ND
hall effect position sensor 503
PNZ109L-ND
PNZ14700R
LN175PA-ND
PNZ331CL
LNA2W01L-ND
|
PDF
|
|
3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
|
OCR Scan
|
1020G
N12861
N12B62
MN1381
MN13811
MN13821
15P0802
15P5402
58851A
70803A
3866S
transistor a999
bs 7818 -1995
transistor tt 2206
A999 transistor
TT 2206 transistor
a1535A
8340UAS
transistor 3866S
2SD 4515
|
PDF
|
PR002-2
Abstract: mru2 PR0022
Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli Type No. cation Po Ap Vf min. max. typ. (mA) (mW) t, ,tf typ. typ. (nm ) (deg.) (ns) If No. T O -18 (Sm all) LN143 For control LN122WS (V ) 40 MRÜ2-1 T O -18 (Sm all)
|
OCR Scan
|
Plastic50
P5002-1
P5002-Ì
P5002-1N
P5002-2
P3002-1
P3002-2
P5002-4
PR002-2
mru2
PR0022
|
PDF
|
AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
|
OCR Scan
|
MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
|
PDF
|
220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585
|
Original
|
AD9272
P462-ND
LNG295LFCP2U
P463-ND
LNG395MFTP5U
220v AC voltage stabilizer schematic diagram
LG color tv Circuit Diagram tda 9370
1000w inverter PURE SINE WAVE schematic diagram
schematic diagram atx Power supply 500w
TV SHARP IC TDA 9381 PS
circuit diagram wireless spy camera
9744 mini mainboard v1.2
sony 279-87
transistor E 13005-2
superpro lx
|
PDF
|
mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
|
Original
|
PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
|
PDF
|