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    LOW FREQUENCY POWER TRANSISTOR AND MODULES Search Results

    LOW FREQUENCY POWER TRANSISTOR AND MODULES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828EVB Murata Manufacturing Co Ltd QORVO UWB MODULE EVALUATION KIT Visit Murata Manufacturing Co Ltd
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    MYC0409-NA-EVM Murata Manufacturing Co Ltd 72W, Charge Pump Module, non-isolated DC/DC Converter, Evaluation board Visit Murata Manufacturing Co Ltd

    LOW FREQUENCY POWER TRANSISTOR AND MODULES Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Asymmetrical Parasitic Inductance Utilized for Switching Loss Reduction in Power Modules Michael Frisch, Technical Marketing Manager, Vincotech GmbH Germany Temesi Ernö, Manager Application Engineering, Vincotech Kft. (Hungary) High efficiency of power conversion circuits is a design goal on its own. At the top end


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    inverter welder schematic diagram

    Abstract: inverter welder schematic inverter welder schematic 1 phase welder FERRITE TRANSFORMER design hybrid inverter welder schematic diagram 250A darlington transistor electrical schematic diagram WELDER darlington pair transistor table inverter welder 4 schematic schematic diagram induction heater
    Text: m MBSK Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Darlington Transistor Modules Ratings and Characteristics 1.0 and molybdenum. This assembly is next soldered to a copper collector electrode along with a free-wheeling diode chip. The


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    tri300 inverter welder schematic diagram inverter welder schematic inverter welder schematic 1 phase welder FERRITE TRANSFORMER design hybrid inverter welder schematic diagram 250A darlington transistor electrical schematic diagram WELDER darlington pair transistor table inverter welder 4 schematic schematic diagram induction heater PDF

    Untitled

    Abstract: No abstract text available
    Text: DRP-8500 Series Low Cost Analog to Frequency Modules for Micro PLC Digital Inputs From 105 $ ߜ DRP-8500 Series Connect to Micro PLCs High Speed Counter Inputs ߜ DRP-8600 Series Connect to Micro PLCs 24 VDC Logic Inputs ߜ Voltage, Current, RTD, Thermocouple and


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    DRP-8500 DRP-8600 volta00 DRP-8555 DRP-8605 DRP-8606 DRP-8607 DRP-8611 PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 PDF

    MMM6029

    Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
    Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular


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    SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications PDF

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


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    IN4372A

    Abstract: M57950L M57215L Darlington Independent Power Module M57215BL M57903L darlington transistor C 3300 ks621k30 M57904L KS221K10
    Text: 74WEREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D a r lin g t o n T r a n s is t o r Modules Application Information 2.0 Power Module Mounting Figure 2.1 Mounting Screw Fastening Pattern When mounting power transistor


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    74WEREX M57215L M57215BL M57215BL. 1000v) in4372a in4372a M57950L Darlington Independent Power Module M57903L darlington transistor C 3300 ks621k30 M57904L KS221K10 PDF

    IR2110 IGBT DRIVER

    Abstract: IR2110 application note IR2110 AN IR2110 ir2110 application dt 92-2a current buffer ic IGBT Drivers Transistors IR2110 design driver circuit design for IGBT module
    Text: Design Tips DT 92-2A High Current Buffer for Control ICs Introduction Modules and other paralleled MOS-gated power transistors can present difficulties to gate drive circuits. International Rectifier’s family of Control IC drivers can provide large peak output


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    AN 6752

    Abstract: msc925 AN 6752 japan
    Text: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS FACT SHEET NIJ004 Double Polysilicon – the technology behind silicon MMICs, RF transistors & PA modules Higher frequencies and greater levels of integration for mobile communications emitter base


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    NIJ004 SCS60 AN 6752 msc925 AN 6752 japan PDF

    pwm INVERTER welder

    Abstract: KD224510 250A darlington transistor Kd224515 powerex snubber capacitor inverter welder circuit kd2245 kd224510 application note KD221K75 transistor
    Text: W U IfB tE K Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Darlington Transistor Modules Application Information 2.7 Reverse Transistor Action and dv/dt Turn-on A problem that occurs with the half-bridge circuit configuration fed


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    2N6367

    Abstract: 2N6370 MRF420 2N5070 2N5847 MRF433 MRF432 MRF428 MRF823 2N5942
    Text: RF Transistors and Modules This selection guide contains the preferred registered and non-registered RF parts available. Motorola has selected 18 transistor/module chains from 1.5 to 600 W PEP output. A ll devices are designed, tested and optimized fo r frequency ranges from 2 to 900 MHz. These devices are designed fo r your advanced RF


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    2N6370 MRF432 MRF433 2N5070 MRF401 145A07 MRF427 45A-08 2N5941 2N5942 2N6367 MRF420 2N5847 MRF428 MRF823 PDF

    ticomel transformer

    Abstract: NATIONAL IGBT TICOMEL marking code Sk transistors mosfet Marking SAs PSDM-0DO2-5040 PSDM-0DT2-5020 audio transformer catalog MTBF mosfet power driver "SCHURTER" "Catalogue"
    Text: Product Group Catalog EMC Products www.schurter.com/emc Power Stage Driver Modules  www.schurter.com > summary Intro Information XXX Power stage driver modules Keyword Index Product Datasheets XXX XXX XXX General Product Information Product Standard / Definitions / CE-Marking / Conformity


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    Ran91 ticomel transformer NATIONAL IGBT TICOMEL marking code Sk transistors mosfet Marking SAs PSDM-0DO2-5040 PSDM-0DT2-5020 audio transformer catalog MTBF mosfet power driver "SCHURTER" "Catalogue" PDF

    inverter new welding machine circuit

    Abstract: mitsubishi air conditioner Electric Welding Machine thyristor Mitsubishi Electric IGBT MODULES MOSFET welding INVERTER car power inverter mitsubishi electric igbt module mitsubishi semiconductors inverter power modules GTO triac inverter welding machine
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS INTRODUCTION 1.0 Introduction The introduction of MOS Technology into the process arena of Power Semiconductors has created revolutionary device and application advantages. Of particular interest is the Insulated


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    20kHz 10kHz inverter new welding machine circuit mitsubishi air conditioner Electric Welding Machine thyristor Mitsubishi Electric IGBT MODULES MOSFET welding INVERTER car power inverter mitsubishi electric igbt module mitsubishi semiconductors inverter power modules GTO triac inverter welding machine PDF

    uhf linear amplifier module

    Abstract: GP 809 DIODE MMH3101 81348 MHW7185CL 33048 Power Amplifier MMIC 2.6 GHz 53368 Freescale Semiconductor hybrid amplifier modules MARKING T MMIC AMPLIFIER 32DB GAIN
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor Device Data. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 CATV Distribution Amplifier Modules. DL209 Rev. 2 2/2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 CATV Distribution Amplifier Modules


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    DL209 uhf linear amplifier module GP 809 DIODE MMH3101 81348 MHW7185CL 33048 Power Amplifier MMIC 2.6 GHz 53368 Freescale Semiconductor hybrid amplifier modules MARKING T MMIC AMPLIFIER 32DB GAIN PDF

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-164MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 164MHz range. The battery can be connected directly to the drain of the


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    RA33H1516M1 154-164MHz RA33H1516M1 33watt 164MHz PDF

    pwm drive optocoupler high side MOSFET Gate Drive

    Abstract: 817 opto-coupler ic circuit diagram 817 Optocoupler datasheet high side IGBT driver optocoupler fabrication of an isolation circuit using optocoupler HCNW4506 817 Optocoupler optocoupler 817 avago, hcpl 817 optocoupler C 817
    Text: Optocouplers Isolated Circuit for Intelligent Power Modules IPM and Gate Drivers Application Note 5401 Introduction IPM (smart, intelligent or integrated power module) hybrids power IGBTs (insulated gate bipolar transistors) and gate-driver circuits into a single compact package.


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    AV02-1480EN pwm drive optocoupler high side MOSFET Gate Drive 817 opto-coupler ic circuit diagram 817 Optocoupler datasheet high side IGBT driver optocoupler fabrication of an isolation circuit using optocoupler HCNW4506 817 Optocoupler optocoupler 817 avago, hcpl 817 optocoupler C 817 PDF

    ff450r12me3

    Abstract: C28T sod6 SOT23 transistor R2C t60403-d4615 C-EUC1206 IGBT DRIVER SCHEMATIC 2ED100E12 ge c30b IGBT DRIVER SCHEMATIC chip
    Text: Application Note, V1.2, Aug. 2009 AN2008-02 2ED100E12-F2_EVAL 6ED100E12-F2_EVAL Evaluation Driver Board for EconoDUAL 3 and EconoPACK™+ modules Industrial Power Edition 2009-11-02 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2009.


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    AN2008-02 2ED100E12-F2 6ED100E12-F2 AN2007-04, ff450r12me3 C28T sod6 SOT23 transistor R2C t60403-d4615 C-EUC1206 IGBT DRIVER SCHEMATIC 2ED100E12 ge c30b IGBT DRIVER SCHEMATIC chip PDF

    VAC t60403

    Abstract: ff450r12me3 SOD323R T60403 IGBT DRIVER SCHEMATIC t60403-d4615 T60403-D4615-X054 2ED100E12 AN2007-04 IGBT DRIVER SCHEMATIC chip
    Text: Application Note, V1.2, Aug. 2009 AN2008-02 2ED100E12-F2_EVAL 6ED100E12-F2_EVAL Evaluation Driver Board for EconoDUAL 3 and EconoPACK™+ modules Industrial Power Edition 2009-10-07 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2009.


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    AN2008-02 2ED100E12-F2 6ED100E12-F2 AN2007-04, VAC t60403 ff450r12me3 SOD323R T60403 IGBT DRIVER SCHEMATIC t60403-d4615 T60403-D4615-X054 2ED100E12 AN2007-04 IGBT DRIVER SCHEMATIC chip PDF

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 162MHz range. The battery can be connected directly to the drain of the


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    RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz PDF

    10KF6

    Abstract: IGBT Drivers Transistors NIPPON CAPACITORS DT92-2A EB207 MTD5N10E
    Text: MOTOROLA Order this document by EB207/D SEMICONDUCTOR ENGINEERING BULLETIN EB207 High Current Buffer for Control IC's Prepared by: Larry Baxter VCC INTRODUCTION Q1 MTD6P10E Modules and other paralleled MOS–gated power transistors can present difficulties to gate drive circuits.


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    EB207/D EB207 EB207/D* EB207/D 10KF6 IGBT Drivers Transistors NIPPON CAPACITORS DT92-2A MTD5N10E PDF

    MOSFET TRANSISTOR SMD MARKING CODE nh

    Abstract: TRANSISTOR SMD MARKING CODE LF MMIC SOT 343 marking CODE BC 148 TRANSISTOR PIN CONFIGURATION TRANSISTOR SMD CODE PACKAGE SOT363 smd diode sod-323 marking code 31 smd mosfet sot-363 smd code marking SOT223 MINI POWER MOSFET SMD TRANSISTOR MARKING BF transistor 313 smd
    Text: APPLICATIONS DISCRETE SEMICONDUCTORS Jörg Lützner ● Achim Renner Package deal for discretes Progressive miniaturization of electronic modules and streamlined production technologies e.g. with molded interconnection devices call for sustained reduction in


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    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 162MHz range. The battery can be connected directly to the drain of the


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    RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz Oct2011 PDF

    Untitled

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the


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    RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz PDF

    amp circuit diagrams 400w

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the


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    RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz amp circuit diagrams 400w PDF