Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SKY65373-11: 1.710-1.785 GHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier Applications • LTE, WCDMA Infrastructure • Low noise, high linearity systems Features • Fully integrated low-noise front end • High gain: 35 dB
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SKY65373-11:
16-pin,
J-STD-020)
SKY65373-11
01764A
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1512
Abstract: Input Stages Preamplifiers 1510/1512
Text: Low-Noise, High Performance Audio Preamplifier IC THAT 1510, 1512 FEATURES APPLICATIONS • Low Noise: 1 nV/√Hz input noise 60dB gain 34 nV/√Hz input noise (0dB gain) (1512) • Differential Low Noise Preamplifiers • Low THD+N (full audio bandwidth):
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14-pin
1512
Input Stages
Preamplifiers
1510/1512
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Untitled
Abstract: No abstract text available
Text: MGA-13216 High Gain, High Linearity, Very Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-13216 is a two stage, easy-touse GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise with good input return loss and high linearity
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MGA-13216
MGA-13216
MGA-13116
AV02-2878EN
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MARKING CF sot23-5
Abstract: lmh6629 LM6629 MARKING FZ SOT23 MF05A lmh6629SD lmh6629mf sot23-5 0DB Low-Power Operational Amplifier SOT23-5 249 sot23-5
Text: LMH6629 Ultra-Low Noise, High-Speed Operational Amplifier with Shutdown General Description Features The LMH6629 is a high-speed, ultra low-noise amplifier designed for applications requiring wide bandwidth with high gain and low noise such as in communication, test and measurement, optical and ultrasound systems.
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LMH6629
LMH6629
MARKING CF sot23-5
LM6629
MARKING FZ SOT23
MF05A
lmh6629SD
lmh6629mf
sot23-5 0DB
Low-Power Operational Amplifier SOT23-5
249 sot23-5
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NJG1108HA8
Abstract: NJG1108
Text: NJG1108HA8 GPS LOW NOISE AMPLIFIER GaAs MMIC ! GENERAL DESCRIPTION The NJG1108HA8 is a low noise amplifier GaAs MMIC designed for GPS. This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. This IC has the function
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NJG1108HA8
NJG1108HA8
NJG1108
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Untitled
Abstract: No abstract text available
Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.
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FPD7612P70
FPD7612P70
22dBm
85GHz
24GHz
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MLK1005
Abstract: MLG1005
Text: NJG1107HB6 LOW NOISE AMPLIFIER GaAs MMIC QGENERAL DESCRIPTION NJG1107HB6 is a Low Noise Amplifier GaAs MMIC designed for GPS This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. This amplifier includes internal self-bias circuit and input
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NJG1107HB6
NJG1107HB6
575GHz
5751GHinto
MLK1005
MLG1005
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Untitled
Abstract: No abstract text available
Text: NJG1107HB6 LOW NOISE AMPLIFIER GaAs MMIC •GENERAL DESCRIPTION NJG1107HB6 is a Low Noise Amplifier GaAs MMIC designed for GPS This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. This amplifier includes internal self-bias circuit and input
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NJG1107HB6
NJG1107HB6
575GHz
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FPD6836P70
Abstract: FPD6836P70SQ FPD6836P70SR mrs 317 36P7 LL1005FHL 0805X7R BC 945 transistor PHEMT marking code B fpd6836p
Text: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.
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FPD6836P70
FPD6836P70
22dBm
18GHz
11GHz)
18GHz)
FPD6836P70-AG
FPD6836P70-AJ
FPD6836P70SQ
FPD6836P70SR
mrs 317
36P7
LL1005FHL
0805X7R
BC 945 transistor
PHEMT marking code B
fpd6836p
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MLG1005
Abstract: MLK1005 NJG1107HB3
Text: NJG1107HB3 LOW NOISE AMPLIFIER GaAs MMIC QGENERAL DESCRIPTION NJG1107HB3 is a Low Noise Amplifier GaAs MMIC designed for GPS This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. This amplifier includes internal self-bias circuit and input
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NJG1107HB3
NJG1107HB3
575GHz
5751GH
MLG1005
MLK1005
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GRM36
Abstract: HK1005 NJG1107 NJG1107KB2 C 93725
Text: NJG1107KB2 1.5/1.9GHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1107KB2 is a Low Noise Amplifier GaAs MMIC designed for 1.5GHz and 1.9GHz band digital cellular phone and Japanese PHS handsets. This amplifier provides low noise figure, high gain and high IP3 operated by single low
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NJG1107KB2
NJG1107KB2
49GHz
96GHz
4901GHz
GRM36
HK1005
NJG1107
C 93725
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Untitled
Abstract: No abstract text available
Text: High IP3 Low Noise Amplifier 50Ω ZRL-1200 650 to 1200 MHz Features • high IP3, +46 dBm typ. • low noise figure, 2.0 dB typ. • broadband flat gain response • internal voltage regulated • over-voltage and transient protected Applications • low noise, high dynamic range
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ZRL-1200
FJ893
ZRL-1200
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Untitled
Abstract: No abstract text available
Text: MGA-637P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-637P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . This LNA has low noise and high linearity achieved through the
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MGA-637P8
MGA-637P8
CDMA2000x)
AV02-2992EN
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MGA653
Abstract: QFN PACKAGE Junction to PCB thermal resistance 633p MGA633 643p MGA-643P8
Text: MGA-635P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-635P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of
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MGA-635P8
MGA-635P8
75mm3
450MHz
AV02-2545N
MGA653
QFN PACKAGE Junction to PCB thermal resistance
633p
MGA633
643p
MGA-643P8
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MGA-634P8-BLKG
Abstract: mga633p8 MCR01MZS
Text: MGA-634P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-634P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of
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MGA-634P8
MGA-634P8
75mm3
450MHz
AV02-2544N
MGA-634P8-BLKG
mga633p8
MCR01MZS
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MAX 8985
Abstract: pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10
Text: CFH120 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers
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CFH120
CFH120-08
Q62705-K0603
CFH120-10
Q62705-K0604
MAX 8985
pseudomorphic HEMT
ta 7176 datasheet
8772 P
CFH120
CFH120-08
CFH120-10
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Untitled
Abstract: No abstract text available
Text: High IP3 Low Noise Amplifier 50Ω ZRL-1200 650 to 1200 MHz Features • high IP3, +46 dBm typ. • low noise figure, 2.0 dB typ. • broadband flat gain response • internal voltage regulated • over-voltage and transient protected Applications • low noise, high dynamic range
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ZRL-1200
FJ893
ZRL-1200
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HK1005
Abstract: NJG1107HB3 capacitor DD
Text: NJG1107HB3 LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION nPACKAGE OUTLINE NJG1107HB3 is a Low Noise Amplifier GaAs MMIC designed for GPS This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. This amplifier includes internal self-bias circuit and input
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NJG1107HB3
NJG1107HB3
575GHz
5751GHz
HK1005
capacitor DD
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FPD7612P70
Abstract: PHEMT marking code a HEMT marking P InP transistor HEMT MIL-HDBK-263 Gan hemt transistor RFMD rfmd model marking code
Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT RoHS Compliant Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.
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FPD7612P70
FPD7612P70
22dBm
85GHz
18GHz
11GHz)
PHEMT marking code a
HEMT marking P
InP transistor HEMT
MIL-HDBK-263
Gan hemt transistor RFMD
rfmd model marking code
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Untitled
Abstract: No abstract text available
Text: High IP3 Low Noise Amplifier 50Ω ZRL-1200 650 to 1200 MHz Features • high IP3, +46 dBm typ. • low noise figure, 2.0 dB typ. • broadband flat gain response • internal voltage regulated • over-voltage and transient protected Applications • low noise, high dynamic range
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ZRL-1200
FJ893
DIRECTRL-1200
ZRL-1200
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jrc 2115
Abstract: 2115 jrc jrc 2115 equivalent 2115 8 pin jrc
Text: HIGH PERFORMANCE LOW-NOISE OPERATIONAL AMPLIFIER NJM5534 The NJM5534 is a high performance, low noise operational amplifier. This amplifier features popular pin-out, superior noise performance, and high output drive capability. The amplifier also features guaranteed noise performance with substantially higher gain-bandwidth product, power
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NJM5534
NJM5534
NJM741
--715V
Ta-25
jrc 2115
2115 jrc
jrc 2115 equivalent
2115 8 pin jrc
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Untitled
Abstract: No abstract text available
Text: B U R R - B R O W N <i [ OPA621 ] Wideband Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW NOISE: 2.3nV/VHz LOW NOISE PREAMPLIFIER • LOW DIFFERENTIAL GAIN/PHASE ERROR LOW NOISE DIFFERENTIAL AMPLIFIER • HIGH OUTPUT CURRENT: 150mA HIGH-RESOLUTION VIDEO
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OPA621
150mA
500MHz
OPA621
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2N459
Abstract: ZN460 5022 amplifier ZN459 variable gain audio preamplifier Ultra low noise amplifier
Text: AMPLIFIERS ULTRA LOW NOISE WIDEBAND AMPLIFIER 2N459/C/CP The ZN459 is an ultra low noise amplifier with remarkable noise performance, very high gain bandwidth product 15GHz , and small package. This combination makes It exceptionally attractive for low noise
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2N459/C/CP
ZN459
15GHz)
800pV
15MHz
vaN460C/ZN460CP
ZN460
50-60dB
800pV/VHz
2N459
5022 amplifier
variable gain audio preamplifier
Ultra low noise amplifier
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r03003
Abstract: No abstract text available
Text: MPS-0809A9-85 870 to 925 MHz Low Noise Receiver Amplifier Features • Very Low Noise 1.1 dB Typical • High +36 dBm Typical IP3 • 16 dB Typical Gain • 6.0 Volt Bias • 26% High Power Added Efficiency Description The MPS-0809A9-85 is a low noise high dynamic
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MPS-0809A9-85
MPS-0809A9-85
NMT900
yz7777777z.
R03003
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