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    LOW NOISE TRANSISTOR BC Search Results

    LOW NOISE TRANSISTOR BC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    LOW NOISE TRANSISTOR BC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.


    Original     		PDF FPD7612P70 FPD7612P70 22dBm 85GHz 24GHz

    FPD7612P70

    Abstract: 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R
    Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.


    Original     		PDF FPD7612P70 FPD7612P70 22dBm 85GHz 24GHz 11GHz) 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R

    FPD6836P70

    Abstract: FPD6836P70SQ FPD6836P70SR mrs 317 36P7 LL1005FHL 0805X7R BC 945 transistor PHEMT marking code B fpd6836p
    Text: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.


    Original     		PDF FPD6836P70 FPD6836P70 22dBm 18GHz 11GHz) 18GHz) FPD6836P70-AG FPD6836P70-AJ FPD6836P70SQ FPD6836P70SR mrs 317 36P7 LL1005FHL 0805X7R BC 945 transistor PHEMT marking code B fpd6836p

    FPD6836P70

    Abstract: No abstract text available
    Text: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.


    Original     		PDF FPD6836P70 FPD6836P70 22dBm 18GHz FPD6836P70-AG FPD6836P70-AJ FPD6836P70SQ

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 – FEBRUARY 95 FEATURES * BCEV=150V * Very Low Saturation Voltage * High Gain * Inherently Low Noise APPLICATIONS * Emergency Lighting * Low Noise Audio 1.0 180 D=1 D.C 160 t1 140 tp 120 100 0.75


    Original     		PDF ZTX1051A 100ms NY11725

    transistor BC 245

    Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136
    Text: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the


    Original     		PDF

    bc307

    Abstract: bc308 BC309 BC308 PNP transistor transistor BC309 BC237 BC307 complementary
    Text: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC307 VCEO=-45V. Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). N


    Original     		PDF BC307/8/9 BC309 BC237/238/239. BC307 BC308 BC307 BC308 PNP transistor transistor BC309 BC237 BC307 complementary

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. FEATURE 1999. 11. 30 Revision No : 2 1/1


    Original     		PDF BC559/560

    bc237

    Abstract: bc238 bc239 BC237 complementary TRANSISTOR bc238 BC307 transistor bc239 120120A
    Text: SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC237 VCEO=45V. Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz). N E K


    Original     		PDF BC237/8/9 BC239 BC307/308/309. BC237 BC238 BC237 BC23age BC237 complementary TRANSISTOR bc238 BC307 transistor bc239 120120A

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC549/550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE 1999. 11. 30 Revision No : 2 1/1


    Original     		PDF BC549/550

    Transistor BC 1078

    Abstract: Transistor BC 1078 transistor transistor marking R2s TRANSISTOR MARKING YB BC 1078 transistor BF 245 C equivalent BI 425
    Text: BFP620F E7764 XYs NPN Silicon Germanium RF Transistor Preliminary data  High gain low noise RF transistor 3  Small package 1.4 x 0.8 x 0.59 mm 2 4  Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz  Maximum stable gain


    Original     		PDF BFP620F E7764 Jul-03-2003 Transistor BC 1078 Transistor BC 1078 transistor transistor marking R2s TRANSISTOR MARKING YB BC 1078 transistor BF 245 C equivalent BI 425

    Untitled

    Abstract: No abstract text available
    Text: BFP620F XYs NPN Silicon Germanium RF Transistor Preliminary data  High gain low noise RF transistor 3  Small package 1.4 x 0.8 x 0.59 mm 2 4  Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz  Maximum stable gain


    Original     		PDF BFP620F Feb-20-2003

    BCY79

    Abstract: BCY59
    Text: BCY79 LOW NOISE AUDIO AMPLIFIER DESCRIPTION The BCY79 is a silicon Planar Epitaxial PNP transistor in Jedec TO-18 metal case. It is intented for use in audio input stages, driver stages and low-noise input stages. The NPN complementary type is BCY59. c


    Original     		PDF BCY79 BCY79 BCY59. BCY59

    BCY79

    Abstract: BCY59
    Text: BCY79 LOW NOISE AUDIO AMPLIFIER DESCRIPTION The BCY79 is a silicon Planar Epitaxial PNP transistor in Jedec TO-18 metal case. It is intented for use in audio input stages, driver stages and low-noise input stages. The NPN complementary type is BCY59. TO-18


    Original     		PDF BCY79 BCY79 BCY59. BCY59

    BCS49

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN general purpose transistor FEATURES BC849W; BC850W PIN CONFIGURATION • S- mini package. • Low noise DESCRIPTION NPN transistor in a plastic SOT323 package, primarily intended for low noise stages in tape recorders, hi-fi


    OCR Scan     		PDF BC849W; BC850W OT323 BC849W BC850W BCS49

    transistor tic 106

    Abstract: BCY66 AF200 transistor tic 106 N tic 105 Q60203-Y66 tic 246 h tic 246 tic 245
    Text: BCY66 NPN Transistor for low-noise AF pre-stages BCY 66 is an epitaxial NPN silicon planar transistor in a case 18 A 3 DIN 41 876 TO-18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise AF pre-stages.


    OCR Scan     		PDF BCY66 BCY66 60203-Y transistor tic 106 AF200 transistor tic 106 N tic 105 Q60203-Y66 tic 246 h tic 246 tic 245

    transistor marking 4c

    Abstract: No abstract text available
    Text: Philips Sem iconductors Product specification PNP general purpose transistor BC859W; BC860W PIN CONFIGURATION FEATURES • S -m in i package. • Low noise DESCRIPTION PNP transistor in a plastic SOT323 package, prim arily intended for low noise stages in tape recorders, hi-fi


    OCR Scan     		PDF BC859W; BC860W OT323 BC859W: BC859AW BC859BW BC859CW BC860W: BC860AW transistor marking 4c

    BCY67

    Abstract: HTI 2E 101S Q62702-C254
    Text: BCY67 PNP Transistor for low-noise AF pre-stages BCY 67 is an epitaxial PNP silicon planar transistor in a case 18 A 3 DIN 41 876 T O -18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise pre-stages as well as in


    OCR Scan     		PDF BCY67 BCY67 10ZkHz HTI 2E 101S Q62702-C254

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 -FEBRUARY 95_ ZTX1051A _ _ _ FEATURES * Bcev=150V * Very Low Saturation Voltage * High Gain * Inherently Low Noise APPLICATIONS * Em ergency Lighting * Low Noise Audio


    OCR Scan     		PDF ZTX1051A R100MHz lB-40mA, 100mA 0D11D3D

    BC307

    Abstract: BC308 BC309 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary
    Text: SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V Ceo= -45V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (Vce=-6V, Ic=-0.1mA, f=lkHz).


    OCR Scan     		PDF BC307/8/9 BC307 BC309 BC237/238/239. BC308 BC309 BC308 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary

    BC307

    Abstract: BC308 BC309 BC308 PNP transistor
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V ceo= -4 5 V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.)


    OCR Scan     		PDF BC307/8/9 BC307 BC309 BC237/238/239. BC308 BC309 BC308 BC308 PNP transistor

    72w transistor sot 23

    Abstract: 72W SOT23 BC817 rohm
    Text: ROHM CO L T » Tr ' 4QE D B 7&2W Ï 00032=11 b HRHM S S T Super Slim Transistor Types (S O T-23) Function Low Noise Amp Driver Low noise Amp Driver Low Noise Amp Mix Ose. TVTuner Type BC817-16 BC817-2S BC817-40 BC847A BC847B BC847C BC848A BC848B BC848C BC857A


    OCR Scan     		PDF BC817-16 BC817-2S BC817-40 BC847A BC847B BC847C BC848A BC848B BC848C BC857A 72w transistor sot 23 72W SOT23 BC817 rohm

    BC237

    Abstract: BC238 bc2378 transistor bc237 bc337 BC239 transistor bc238 bc237 transistor
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC237/8/9 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC237 V ceo=45V. • Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (V Ce =6V, Ic=0.1mA, f=lkHz).


    OCR Scan     		PDF BC237/8/9 BC237 BC239 BC307/308/309. BC238 BC239 BC238 bc2378 transistor bc237 bc337 transistor bc238 bc237 transistor