Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LOW R MOSFET Search Results

    LOW R MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    LOW R MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    100A 1000V mosfet

    Abstract: H-bridge Mosfet LPM2M025-100 LPM2M035-100 LPM2M040-060 LPM2M060-060 LPM2M120-030 LPM2M150-010 LPM2M200-006 LPM2M200-010
    Text: tSENSITRON LPMxMxxx-xxx SEMICONDUCTOR STANDARD LOW COST HERMETIC MOSFET MODULES FEATURES: • High Power Density • Low Drain to Source Resistance R DS(on • Low Thermal Resistance (R θJC) INDUSTRIAL MOSFET PRODUCT MAP ID (Amps) CONFIGURATION VDSS (V)


    Original
    LPM2M200-006 LPM2M250-006 LPM2M150-010 LPM2M200-010 LPM2M080-030 LPM2M120-030 LPM2M040-060 LPM2M060-060 LPM2M025-100 LPM2M035-100 100A 1000V mosfet H-bridge Mosfet LPM2M025-100 LPM2M035-100 LPM2M040-060 LPM2M060-060 LPM2M120-030 LPM2M150-010 LPM2M200-006 LPM2M200-010 PDF

    LCD TV SMPS circuit

    Abstract: IXDD 8pin dual gate driver Telfon Tube ixdn 55 n 120 d1 D-68623 MS-001 IXYS IXDI 430 IN509
    Text: L O W- S I D E G AT E D R I V E R I C S F R O M 2 A T O 1 4 A N E W P R O D U C T B R I E F Low-Side Gate Driver ICs from 2A to 14A NEXT GENERATION IXD_5XX LOW-SIDE GATE DRIVERS WITH IMPROVED COST-EFFICIENCY, CIRCUIT DENSITY AND RUGGEDNESS FOR MOSFETs AND IGBTs


    Original
    MS-001 D-68623 LCD TV SMPS circuit IXDD 8pin dual gate driver Telfon Tube ixdn 55 n 120 d1 IXYS IXDI 430 IN509 PDF

    JESD22

    Abstract: No abstract text available
    Text: BSF024N03LT3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 2.4 mΩ ID 106 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance


    Original
    BSF024N03LT3 JESD22 PDF

    BSB017N03LX3

    Abstract: JESD22
    Text: BSB017N03LX3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 1.7 mΩ ID 147 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance


    Original
    BSB017N03LX3 JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSF024N03LT3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 2.4 mΩ ID 106 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance


    Original
    BSF024N03LT3 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSB012N03LX3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 1.2 mΩ ID 180 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance


    Original
    BSB012N03LX3 PDF

    BSB014N04LX3 G

    Abstract: JESD22
    Text: BSB014N04LX3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 40 V R DS(on),max 1.4 mΩ ID 180 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance


    Original
    BSB014N04LX3 BSB014N04LX3 G JESD22 PDF

    JESD22

    Abstract: No abstract text available
    Text: BSB015N04NX3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 40 V R DS(on),max 1.5 mΩ ID 180 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance


    Original
    BSB015N04NX3 JESD22 PDF

    BSF050N03LQ3

    Abstract: JESD22
    Text: BSF050N03LQ3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 5 mΩ ID 60 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance


    Original
    BSF050N03LQ3 JESD22 PDF

    PS7801-1A-F3

    Abstract: PS7802-1A PS7802-1A-F3 PS7802-1A-F4
    Text: NEC's 4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE PS7802-1A 1-CH OPTICAL COUPLED MOSFET FEATURES DESCRIPTION • LOW C x R : C x R = 12.6 pF • Ω NEC's PS7802-1A is a low output capacitance solid state relay containing GaAs LEDs on the light emitting side input


    Original
    PS7802-1A PS7802-1A PS72xx PS7801-1A-F3 PS7802-1A-F3 PS7802-1A-F4 PDF

    PS7200R-1A

    Abstract: PS7200R-1A-E3 PS7200R-1A-E4 PS7200R-1A-F3 PS7200R-1A-F4
    Text: NEC's 4 PIN SOP, 1.1 pF LOW OUTPUT CAPACITANCE 1-ch OPTICAL COUPLED MOSFET PS7200R-1A FEATURES DESCRIPTION • LOW C X R: C X R = 11 pF • Ω NEC's PS7200R-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side input


    Original
    PS7200R-1A PS7200R-1A PS7200R-1A-E3 PS7200R-1A-E4 PS7200R-1A-F3 PS7200R-1A-F4 PDF

    PS7801-1A

    Abstract: PS7801-1A-F3 PS7801-A-F3 PS7801-A-F4 NEC RELAY UC
    Text: NEC's 4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE PS7801-1A 1-CH OPTICAL COUPLED MOSFET FEATURES DESCRIPTION • LOW C x R : C x R = 12.6 pF • Ω NEC's PS7801-1A is a low output capacitance solid state relay containing GaAs LEDs on the light emitting side input


    Original
    PS7801-1A PS7801-1A PS72xx PS7801-1A-F3 PS7801-A-F3 PS7801-A-F4 NEC RELAY UC PDF

    rectifier d20 60

    Abstract: No abstract text available
    Text: BSF083N03LQ G OptiMOSTM2 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS on V DS 30 V R DS(on),max 8.3 mΩ ID 53 A • Excellent gate charge x R DS(on) product (FOM) • Low profile (<0.7 mm)


    Original
    BSF083N03LQ rectifier d20 60 PDF

    diode PIN 1

    Abstract: No abstract text available
    Text: OM6218SP1 DUAL 60V, LOW R DS on POWER MOSFET IN LOW PROFILE PLASTIC PACKAGE Dual U n c o m m i t t e d Power MOSFET N-Channel. 60V. .018U R Dsi0m FEATURES • Two Uncommitted MOSFETs In One Package • Isolated Low Profile Package • L o w R DS(on) • Low Conductive Loss/Low Gate Charge


    OCR Scan
    OM6218SP1 OM6218SP1 diode PIN 1 PDF

    35B DIODE

    Abstract: mosfet motor dc 48v OM6218SP1
    Text: OM6218SP1 DUAL 60V, LOW R DS on POWER MOSFET IN LOW PROFILE PLASTIC PACKAGE Dual Uncommitted Power MOSFET N-Channel, 60V, .01812 R ds(oii) Iff FEATURES « • • • • Two Uncommitted M O S F E T s In One Package Isolated Low Profile Package Low RDS(on)


    OCR Scan
    OM6218SP1 OM6218SP1 300fisec, b7flT073 534-5776FAX 35B DIODE mosfet motor dc 48v PDF

    Untitled

    Abstract: No abstract text available
    Text: B U R R - B R O W N <i [ OPA621 ] Wideband Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW NOISE: 2.3nV/VHz LOW NOISE PREAMPLIFIER • LOW DIFFERENTIAL GAIN/PHASE ERROR LOW NOISE DIFFERENTIAL AMPLIFIER • HIGH OUTPUT CURRENT: 150mA HIGH-RESOLUTION VIDEO


    OCR Scan
    OPA621 150mA 500MHz OPA621 PDF

    mosfet 4812

    Abstract: TB370 MS-012AA AN7254 AN7260 ITF87072DK8T 1TF87072DK8T
    Text: in t e ITF87072DK8T r r ii 6A, 20V, 0.037 Ohm, Dual P-Channel, Low Logic Level, Power MOSFET m i January. Data Sheet File Number 4812.1 Features • Ultra Low O n -R e s is ta n c e Packaging S 0 8 JEDEC MS-012AA ‘ r DS(ON) = 0 .0 3 7 i2 , VGS = - 4 . 5 V


    OCR Scan
    MS-012AA) ITF87072DK8T MS-012AA 330mm EIA-481 mosfet 4812 TB370 MS-012AA AN7254 AN7260 ITF87072DK8T 1TF87072DK8T PDF

    Untitled

    Abstract: No abstract text available
    Text: r r u u LT1573 m TECHNOLOGY Low D ro p o u t R e gu la to r Driver F€RTUR€S D C S C R IP TIO n • Low Cost Solution for High Current, Low Dropout Regulators ■ Fast Transient Response Needs Much Less Bulk Capacitance ■ Latching Overload Protection Minimizes


    OCR Scan
    LT1573 LT1575 LT1580/LT1581 LT1584/LT1585/LT1587 1573f PDF

    Untitled

    Abstract: No abstract text available
    Text: International lo g Rectifier HEXFET Power MOSFET • • • • • • • 4855452 PD-9.754 Q 01S454 318 H I N R IRFP064 INTERNATIO NAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance


    OCR Scan
    01S454 IRFP064 O-247 levFP064 PDF

    Untitled

    Abstract: No abstract text available
    Text: OPA65Q B U R R - B R O W N <i [ ] Wideband, Low Power Voltage Feedback OPERATIONAL AMPLIFIER FEATURES LOW POWER: 50mW UNITY GAIN STABLE BANDWIDTH: 560MHz LOW HARMONICS: -77dB c at 5MHz FAST SETTLING TIME: 20ns to 0.01% LOW INPUT BIAS CURRENT: 5|iA DIFFERENTIAL GAIN/PHASE ERROR:


    OCR Scan
    OPA65Q 560MHz -77dB OPA650 560MHz 12-bit PDF

    H1251

    Abstract: 12v step-down transformer files Bobbin EE 16 LTC1439 nichicon gw
    Text: r r w m _ LTC1438/LTC1439 TECHNOLOGY Dual High Efficiency, Low Noise, Synchronous Step-Down Switching Regulators reniURCS DCSCRIPTIOn • Maintains Constant Frequency at Low Output Currents ■ Dual N-Channel MOSFET Synchronous Drive ■ Programmable Fixed Frequency PLL Lockable


    OCR Scan
    LTC1438/LTC1439 1438/LTC1439 400kHz 16-Pin LTC1436/LTC1436-PLL/ LTC1437 LT1510 LTC1538-AUX LTC1539 143891a H1251 12v step-down transformer files Bobbin EE 16 LTC1439 nichicon gw PDF

    Untitled

    Abstract: No abstract text available
    Text: B U R R -B R O W N < • OPA642 | Wideband Low Distortion OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW DISTORTION: -95dBc at 5MHz • ADC/DAC GAIN AMPLIFIER • UNITY-GAIN BANDWIDTH: 450MHz • UNITY-GAIN STABLE • LOW DISTORTION COMMUNICATIONS


    OCR Scan
    OPA642 -95dBc 450MHz 12-BIT OPA642 17313b5 GD24G55 PDF

    Untitled

    Abstract: No abstract text available
    Text: OMS420 OMS52Q QMS620 3 PHASE, LOW VOLTAGE, LOW RDS on , MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE T h r e e P h a s e . 2 0 0 Volt. 15 To 45 A m p B r i d g e W it h C u r r e n t A n d T e m p e r a t u r e S e n s i n g In A L o w Profile P a c k a g e


    OCR Scan
    OMS420 OMS52Q QMS620 PDF

    ISD 1820

    Abstract: No abstract text available
    Text: OMS425 OMS525 OMS625 3 PHASE, LOW VOLTAGE, LOW RDS on , MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE T h r e e P h a s e . 2 5 0 Volt, 15 To 45 A m p B r i d g e W i th C u r r e n t A n d T e m p e r a t u r e S e n s i n g In A Lo w Profile P a c k a g e FEATURES


    OCR Scan
    OMS425 OMS525 OMS625 10Oum ISD 1820 PDF