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    LP SDRAM SOLUTION Search Results

    LP SDRAM SOLUTION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RZ/A1H-High-Resolution-Embedded-GUI-Solution-Kit Renesas Electronics Corporation High Resolution Embedded GUI Solution Kit for RZ/A1H Visit Renesas Electronics Corporation
    P95020NQG Renesas Electronics Corporation Intelligent System Power Solution Visit Renesas Electronics Corporation
    P95020NQG8 Renesas Electronics Corporation Intelligent System Power Solution Visit Renesas Electronics Corporation
    YLPDSKRL78EINK Renesas Electronics Corporation Low Power Display Solution Kit Visit Renesas Electronics Corporation
    P9122-00NBGI Renesas Electronics Corporation Programmable Dual Channel PMIC Solution Visit Renesas Electronics Corporation

    LP SDRAM SOLUTION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ddr 3 tsop

    Abstract: TSOP 56 LAYOUT TSOP 66 Package
    Text: 128 Megabit CMOS DDR SDRAM DPDD16MX8RSBY5 DESCRIPTION: The 128 Megabit LP-StackTM module DPDD16MX8RSBY5, based on 64 Mbit devices, has been designed to fit the same footprint as the 8 Meg x 8 DDR SDRAM TSOP monolithic. This allows for system upgrade without electrical or


    Original     		PDF DPDD16MX8RSBY5 DPDD16MX8RSBY5, A0-A11 30A223-10 53A001-00 ddr 3 tsop TSOP 56 LAYOUT TSOP 66 Package

    udqs

    Abstract: No abstract text available
    Text: 512 Megabit CMOS DDR SDRAM DPDD32MX16WSCY5 ADVANCED INFORMATION DESCRIPTION: The 512 Megabit LP-Stack modules DPDD32MX16WSCY5, based on 256 Megabit devices, has been designed to fit in the same footprint as the 16 Meg x 16 DDR SDRAM TSOP monolithic. This allows for


    Original     		PDF DPDD32MX16WSCY5 DPDD32MX16WSCY5, 53A001-00 30A249-00 udqs

    Untitled

    Abstract: No abstract text available
    Text: 512 Megabit CMOS DDR SDRAM DPDD64MX8WSBY5 DESCRIPTION: The 512 Megabit LP-StackTM module DPDD64MX8WSBY5, based on 256 Mbit devices, has been designed to fit the same footprint as the 32 Meg x 8 DDR SDRAM TSOP monolithic. This allows for system upgrade without electrical or


    Original     		PDF DPDD64MX8WSBY5 DPDD64MX8WSBY5, 53A001-00 30A249-00

    Untitled

    Abstract: No abstract text available
    Text: 256 Megabit CMOS DDR SDRAM DPDD16MX16TSBY5 PIN-OUT DIAGRAM DESCRIPTION: The 256 Megabit LP-Stack modules DPDD16MX16TSBY5, based on 128 Megabit devices, has been designed to fit in the same footprint as the 16 Meg x 8 DDR SDRAM TSOP monolithic. This allows for


    Original     		PDF DPDD16MX16TSBY5 A10/AP 53A001-00 30A245-00

    TSOP 56 LAYOUT

    Abstract: TSOP 48 LAYOUT Dense-Pac Microsystems dm 0256
    Text: 128 Megabit CMOS DDR SDRAM DPDD16MX8RSAY5 DESCRIPTION: The 128 Megabit LP-StackTM module DPDD16MX8RSAY5, based on 64 Mbit devices, has been designed to fit the same footprint as the 16 Meg x 4 DDR SDRAM TSOP monolithic. This allows for system upgrade without electrical or


    Original     		PDF DPDD16MX8RSAY5 DPDD16MX8RSAY5, A0-A11 30A223-00 16Mx4 53A001-00 TSOP 56 LAYOUT TSOP 48 LAYOUT Dense-Pac Microsystems dm 0256

    ipc 502

    Abstract: DPSD64ME8WKY5
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Synchronous SDRAM DPSD64ME8WKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb


    Original     		PDF DPSD64ME8WKY5 256Mb 256Mb IPC-A-610, 30A226-11 ipc 502 DPSD64ME8WKY5

    DPSD32ME8TKY5

    Abstract: SD32M
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous SDRAM DPSD32ME8TKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 256 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 128Mb


    Original     		PDF DPSD32ME8TKY5 128Mb IPC-A-610, 128Mb 30A226-01 DPSD32ME8TKY5 SD32M

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous SDRAM DPSD32ME8TKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 256 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 128Mb


    Original     		PDF DPSD32ME8TKY5 128Mb 256Mb 128Mb 53A001-00. 30A226-01

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail SDRAM DPSD128MX4WNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb


    Original     		PDF DPSD128MX4WNY5 256Mb 512Mb DPSD128MX4WNY5, 512Mb 256Mb 53A001-00. 30A215-01

    DPSD128MX4WNY5

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail SDRAM DPSD128MX4WNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb


    Original     		PDF DPSD128MX4WNY5 256Mb 256Mb 30A215-01 DPSD128MX4WNY5

    30A215-01

    Abstract: DP 6 W
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail SDRAM DPSD128MX4WNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb


    Original     		PDF DPSD128MX4WNY5 256Mb 512Mb 30A215-01 DP 6 W

    LP SDRAM solution

    Abstract: LP2995
    Text: National News LP2995 February 2002 www.national.com/pf/LP/LP2995.html Introducing the World’s Smallest DDR SDRAM Termination Regulator Typical Application Circuit LP2995 VDDQ = 2.5V VDDQ VREF VDD = 2.5V AVIN VSENSE PVIN VTT 22 µF + GND + VREF = 1.25V VTT = 1.25V


    Original     		PDF LP2995 com/pf/LP/LP2995 LP2995 LLP-16 LLP-16 LP SDRAM solution

    Dense-Pac Microsystems

    Abstract: Megabit SDRAM Drawing
    Text: 512 Megabit CMOS DDR SDRAM DPDD32MX16WSCY5 ADVANCED INFORMATION DESCRIPTION: PIN-OUT DIAGRAM The LP-Stack series is a family of interchangeable memory devices. The 512 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and


    Original     		PDF DPDD32MX16WSCY5 DPDD32MX16WSCY5, 30A246-00 Dense-Pac Microsystems Megabit SDRAM Drawing

    sdram 4 bank 4096 16

    Abstract: SDRAM Drawing
    Text: 256 Megabit CMOS DDR SDRAM DPDD16MX16TSBY5 ADVANCED INFORMATION DESCRIPTION: PIN-OUT DIAGRAM The LP-Stack series is a family of interchangeable memory devices. The 256 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and


    Original     		PDF DPDD16MX16TSBY5 DPDD16MX16TSBY5, 30A245-00 sdram 4 bank 4096 16 SDRAM Drawing

    TSOP 66 Package

    Abstract: sdram 4 bank 4096 16
    Text: 512 Megabit CMOS DDR SDRAM DPDD128MX4WSAY5 ADVANCED INFORMATION DESCRIPTION: The LP-Stack series is a family of interchangeable memory devices. The 256 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP


    Original     		PDF DPDD128MX4WSAY5 DPDD128MX4WSAY5, 53A001-00 30A235-00 TSOP 66 Package sdram 4 bank 4096 16

    ddr pin out

    Abstract: Dense-Pac Microsystems 66 pin tsop package sdram 4 bank 4096 16
    Text: 256 Megabit CMOS DDR SDRAM DPDD64MX4TSAY5 PRELIMINARY DESCRIPTION: The LP-Stack series is a family of interchangeable memory devices. The 256 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The


    Original     		PDF DPDD64MX4TSAY5 DPDD64MX4TSAY5, 30A234-00 ddr pin out Dense-Pac Microsystems 66 pin tsop package sdram 4 bank 4096 16

    DPSD8MX32TY5

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD8MX32TY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of this family which utilizes the space saving LP-Stack™ TSOP


    Original     		PDF DPSD8MX32TY5 IPC-A-610 53A001-00 80-Pin 30A225-12 DPSD8MX32TY5

    Untitled

    Abstract: No abstract text available
    Text: 128 Megabit CMOS DDR SDRAM DPDD16MX8RSBY5 PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The LP-StackTM series is a family of interchangeable memory devices. The 128 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The


    Original     		PDF DPDD16MX8RSBY5 DPDD16MX8RSBY5, 53A001-00 30A223-10

    DPSD128ME8XKY5

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 1 Gigabit Synchronous DRAM DPSD128ME8XKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 1 Gigabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 512Mb


    Original     		PDF DPSD128ME8XKY5 512Mb 512Mb IPC-A-610, 30A226-21 DPSD128ME8XKY5

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 1 Gigabit Synchronous DRAM DPSD128ME8XKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 1 Gigabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 512Mb


    Original     		PDF DPSD128ME8XKY5 512Mb 512Mb 30A226-21

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Synchronous DRAM DPSD64ME8WKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb


    Original     		PDF DPSD64ME8WKY5 256Mb 512Mb DPSD64ME8WKY5, 53A001-00. 30A226-11

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD16MX16TKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 256 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 128Mb 16M x 8


    Original     		PDF DPSD16MX16TKY5 128Mb 256Mb 128Mb x001-00. 30A232-12

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC 512 Megabit CMOS DDR SDRAM DPDD128MX4WSÄY5 MICROSYSTEMS ADVANCED INFORMATION DESCRIPTION: PIN-OUT DIAGRAM The LP-Stack series is a family of interchangeable memory devices. The256M egabit Double Data Rale Synchronous DRAM isam em ber o fth isfam ilyw h ich utilizesthenew and innovative space savingTSOP


    OCR Scan     		PDF DPDD128MX4WSÃ The256Megabit D128M 125MHz) 100MHz) 53A001-00 30A235-00

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC MICROSYSTEMS 128 Megabit C M O S D D R SDRAM DPDD32MX4RLAY5 DPDD32MX4RSÍW5 ADVANCED INFORMATION DESCRIPTION: The LP-Stack series is a family of interchangeable memory devices. The128M egabit Double Data Rale Synchronous DRAM isam em ber ofth isfam ilyw h ich utilizesthenew and innovative space savingTSOP


    OCR Scan     		PDF DPDD32MX4RLAY5 The128Megabit DPDD32MX4RLAY5/ DPDD32MX4RSAY5, 64Mbit 00MHz) 53A001-00 30A222-00