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    LP6836 Search Results

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    LP6836 Price and Stock

    Filtronic plc LP6836P70-2

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    Bristol Electronics LP6836P70-2 9
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    Litton Industries LP6836P70

    ALGAAS/INGAAS/ALGAAS PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (PHEMT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components LP6836P70 1
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    LP6836 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LP6836 Filtronic Medium Power PHEMT Original PDF
    LP6836 Filtronic MEDIUM POWER PHEMT Original PDF
    LP6836P100 Filtronic Packaged 0.25W Power PHEMT Original PDF
    LP6836P100-1 Filtronic Packaged 0.25W Power PHEMT Original PDF
    LP6836P100-2 Filtronic Packaged 0.25W Power PHEMT Original PDF
    LP6836P100-3 Filtronic Packaged 0.25W Power PHEMT Original PDF
    LP6836P70 Filtronic PACKAGED MEDIUM POWER PHEMT Original PDF
    LP6836-P70-1 Filtronic PACKAGED MEDIUM POWER PHEMT Original PDF
    LP6836-P70-2 Filtronic PACKAGED MEDIUM POWER PHEMT Original PDF
    LP6836-P70-3 Filtronic PACKAGED MEDIUM POWER PHEMT Original PDF
    LP6836SOT343 Filtronic PACKAGED MEDIUM POWER PHEMT Original PDF
    LP6836SOT343 Filtronic PACKAGED MEDIUM POWER PHEMT Original PDF

    LP6836 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pHEMT transistor 360

    Abstract: LP6836 MIL-HDBK-263
    Text: Filtronic LP6836 Medium Power PHEMT Solid State DRAIN BOND PAD FEATURES • • • • +25 dBm Typical Power at 18 GHz 9.5 dB Typical Power Gain at 18 GHz Low Intermodulation Distortion 55% Power-Added-Efficiency at 18 GHz SOURCE BOND PAD x2 GATE BOND PAD


    Original     		PDF LP6836 LP6836 DSS-029 pHEMT transistor 360 MIL-HDBK-263

    Untitled

    Abstract: No abstract text available
    Text: LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility


    Original     		PDF LP6836SOT343 LP6836SOT343 LP6836 OT343 SC-70) MIL-STD-1686 MIL-HDBK-263.

    pHEMT transistor LP6836

    Abstract: LP6836 LP6836P100 filtronic Solid State
    Text: Filtronic LP6836P100 Packaged 0.25W Power PHEMT Solid State FEATURES • • • • • GATE +24.5 dBm Typical Power at 15 GHz 12 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 55% Power-Added-Efficiency Color-coded by IDSS range SOURCE DRAIN


    Original     		PDF LP6836P100 LP6836P100 LP6836orage, MIL-STD-1686 MILHDBK-263. DSS-031 pHEMT transistor LP6836 LP6836 filtronic Solid State

    LP6836P70-3

    Abstract: LP6836P70-1 LP6836-P70-1 LP6836P70 MIL-HDBK-263 pHEMT transistor 360
    Text: LP6836P70 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 23 dBm Output Power at 1-dB Compression at 15 GHz ♦ 11.5 dB Power Gain at 15 GHz ♦ 50% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility


    Original     		PDF LP6836P70 LP6836P70 MIL-STD-1686 MIL-HDBK-263. LP6836P70-3 LP6836P70-1 LP6836-P70-1 MIL-HDBK-263 pHEMT transistor 360

    MIL-STD-1686

    Abstract: LP6836 MIL-HDBK-263 pHEMT transistor LP6836 high power transistor s-parameters
    Text: LP6836 MEDIUM POWER PHEMT • DRAIN BOND PAD FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency SOURCE BOND PAD 2x GATE BOND PAD • DIE SIZE: 14.2X13.0 mils (360x330 µm) DIE THICKNESS: 3.9 mils (100 µm)


    Original     		PDF LP6836 360x330 50x50 LP6836 MIL-STD-1686 MIL-HDBK-263 pHEMT transistor LP6836 high power transistor s-parameters

    LP6836

    Abstract: LP6836P70 LP6836SOT343 MIL-HDBK-263 RF TRANSISTOR 2GHZ
    Text: PRELIMINARY DATA SHEET LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 19 dB Power Gain at 2 GHz, 8 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS


    Original     		PDF LP6836SOT343 LP6836P70 LP6836 OT343 SC-70) MIL-STD-1686 MIL-HDBK-263. LP6836SOT343 MIL-HDBK-263 RF TRANSISTOR 2GHZ

    LP6836

    Abstract: LP6836SOT343 MIL-HDBK-263 RF TRANSISTOR 2GHZ pHEMT transistor 360
    Text: PRELIMINARY DATA SHEET LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS


    Original     		PDF LP6836SOT343 LP6836SOT343 LP6836 OT343 SC-70) MIL-STD-1686 MIL-HDBK-263. MIL-HDBK-263 RF TRANSISTOR 2GHZ pHEMT transistor 360

    LP6836-P70-1

    Abstract: LP6836P70-1 pHEMT transistor LP6836 filtronic Solid State LP6836P70 LP6836 LP6836P70 LP6836-P70-2 LP6836-P70-3 LP6836P70-3
    Text: Filtronic LP6836P70 PACKAGED MEDIUM POWER PHEMT Solid State FEATURES • • • • • SOURCE +23.0 dBm Typical Power at 15 GHz 11.5 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 50% Power-Added-Efficiency Color-coded by IDSS range DRAIN


    Original     		PDF LP6836P70 LP6836P70 MIL-STD-1686 MILHDBK-263. P70-52 DSS-030 LP6836-P70-1 LP6836P70-1 pHEMT transistor LP6836 filtronic Solid State LP6836P70 LP6836 LP6836-P70-2 LP6836-P70-3 LP6836P70-3