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    LS0113D Search Results

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    biss 0001

    Abstract: NDH832P 006CI
    Text: J k J National S emi co n d u c t o r " NDH832P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDH832P b501130 biss 0001 NDH832P 006CI

    TN3440A

    Abstract: No abstract text available
    Text: S e m i c o n d u c t o r TN3440A & D iscrete P O W ER & S ig n a l T echnologies . National T N 3440A NPN General Purpose Amplifier T h is d e v ic e is d e s ig n e d for u se in h o rizo n tal driver, c la s s A off-line a m p lifier an d off-line sw itching a pp licatio ns. S o u rc e d from P ro c e s s 36.


    OCR Scan     		PDF TN3440A LSD1130 0Q40bm O-226 L50113D D01DL42 TN3440A

    NDS9405

    Abstract: IAT50
    Text: May 1996 N ationa I Semiconductor' NDS9405 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS9405 bSD1130 031tmb NDS9405 IAT50

    NDB7061

    Abstract: NDP7061 LD 8105 d0403
    Text: National Semiconductor" M ay 1 9 9 6 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDP7061 NDB7061 Ru99ed D04031L LD 8105 d0403

    mmbt2906a

    Abstract: MMBTL51 MMBT2904A
    Text: ^Sem iconductor SEMICOND Surface Mount Transistors General Purpose Amplifiers and Switches—PNP MMBT 2904 TO-236 49 60 40 5 MMBT2904A TO-236 (49) 60 40 5 TO-236 (49) 60 MMBT2905A TO-236 (49) 60 MMBT 2906 TO-236 (49) 60 MMBT 2906A TO-236 (49) 60 MMBT 2905


    OCR Scan     		PDF O-236 mmbt2906a MMBTL51 MMBT2904A

    ndc7002n

    Abstract: No abstract text available
    Text: National March 1996 Semiconductor” & NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDC7002N ndc7002n

    BF244A

    Abstract: "N-Channel JFET" bf244c BF244B jfet s00 BF244
    Text: " BF244A BF244B BF244C BF244A / BF244B / BF244C uctor D iscrete POWER &. Signal Technologies N-Channel JFET RF Amplifier This device is designed for RF amplifier and mixer and applications operating up to 450 MHz, and or analog switching requiring low capacitance. Sourced from Process 50.


    OCR Scan     		PDF BF244A BF244B BF244C L501130 "N-Channel JFET" bf244c jfet s00 BF244