TN2905A
Abstract: PN2907A
Text: TN2905A Discrete P O W E R & S ig n a l Technologies National Semiconductor"' TN2905A PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r u s e a s a g e n e ra l purp o se am p lifie r a n d sw itch requiring colle cto r c u rren ts to 5 0 0 m A , S o u rc e d from
|
OCR Scan
|
TN2905A
PN2907A
L5D1130
004DbES
TN2905A
|
PDF
|
NDT452P
Abstract: No abstract text available
Text: National Semiconductor" June 1996 NDT452P P-Channel Enhancement Mode Fi Effect Transistor Features General Description These P-Channel enhancem ent m od e p o w e r field effect transistors are produced using N ational's proprietary, h ig h cell density, DMOS tech no lo g y.
|
OCR Scan
|
NDT452P
125-c
b501130
NDT452P
|
PDF
|
TF411
Abstract: national PN2222A IC VS 1307 I-00 MMBT2222A MMPQ2222 NMT2222 PN2222A PZT2222A TR46
Text: PN2222AI MMBT2222A I MMPQ2222 I NMT2222 I PZT2222A Discrete POW ER & Signa l Technologies National S e m i c o n d u c t o r ” MMBT2222A PN2222A SOT-23 PZT2222A B SOT-223 Mark: 1P NMT2222 MMPQ2222 NPN General Purpose Amplifier This device is fo r use as a medium power amplifier and
|
OCR Scan
|
PN2222A
MMBT2222A
PZT2222A
OT-23
OT-223
MMPQ2222
NMT2222
S0113D
bSD113D
004Dbl7
TF411
national PN2222A
IC VS 1307
I-00
MMPQ2222
NMT2222
PN2222A
PZT2222A
TR46
|
PDF
|
diode RN 1220
Abstract: NDT455N diode 561
Text: J L J National Semiconductor” July 1 9 9 6 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode p ow er fie ld effect tran sisto rs are produced using N ational's p ro p rie ta ry, hig h cell density, DMOS
|
OCR Scan
|
NDT455N
OT-223
LSD113D
00401EÃ
diode RN 1220
NDT455N
diode 561
|
PDF
|
BD371C-10
Abstract: BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6
Text: NATL S E M IC O N D H E D IS C R E T E D • tS0 1 1 3 D 0Q371SB fi 1 S -a CM T" O z CM eg Y~ o CM r* ST -f u T-03-01 « e 3 m o o s i o « 0 *c a) /) c o z Sï (/) « fl «?&2 <D » <D o f X a Jr i o Û) 8 S to CO LU o CL k. w o Q. m S's U o o o o o o o o
|
OCR Scan
|
b50113D
L5D1130
T-03-01
BD371C-10
BD371D
BF494
BF936
yc 236
b055
BC338-25 NATIONAL SEMICONDUCTOR
BD371B
BD371C
BD371C-6
|
PDF
|
N7000
Abstract: 2N7000 MOSFET CJ NDF7000A sfs sot23 Mosfet 2n7000 2N7000 2N7002 NDF7000A NDS7002A 7002 transistor sm
Text: March 1993 Semiconductor 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National's very high cell density third generation DMOS technology. These products have been
|
OCR Scan
|
2N7000/2N7002/NDF7000A/NDS7002A
81-043-299-240B
bSD1130
N7000
2N7000 MOSFET
CJ NDF7000A
sfs sot23
Mosfet 2n7000
2N7000
2N7002
NDF7000A
NDS7002A
7002 transistor sm
|
PDF
|
sot23 t04
Abstract: mark t04 sot 2n5401 sot 23
Text: 2N5401 I MMBT5401 D iscrete POW ER & S ig n a l Technologies tß National Semiconductor" 2N5401 MMBT5401 SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.
|
OCR Scan
|
2N5401
MMBT5401
2N5401
OT-23
bS01130
00407Cn
LSD113D
sot23 t04
mark t04 sot
2n5401 sot 23
|
PDF
|
56 pF CH
Abstract: NDS8858H cft 455 f
Text: J u ly 1 9 9 6 N a t io n a l S e m ic o n d u c to r” NDS8858H Complementary MOSFET Half Bridge General Description Features These C o m plem e n ta ry MOSFET half b ridge devices are produced using N ational's proprietary, hig h cell density, DMOS tech no lo g y. T his very
|
OCR Scan
|
NDS8858H
LSD113Ã
56 pF CH
NDS8858H
cft 455 f
|
PDF
|
NDS9410 equivalent
Abstract: NDS9410
Text: National ÆlÆ Semiconductor November 1993 NDS9410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, D M O S technology. This
|
OCR Scan
|
NDS9410
LSD1130
bSD113D
NDS9410 equivalent
NDS9410
|
PDF
|
j310
Abstract: J310 equivalent z60b J309 4dcm J309-J310 J309 application note MMBFJ309 MMBFJ310
Text: r D is c r e te P O W E R & S i g n a l ^ . T e c h n o lo g ie s , , S e m i c o n d u c t o r “ & J309 J310 MMBFJ309 MMBFJ310 N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and
|
OCR Scan
|
MMBFJ309
MMBFJ310
040ciS2
j310
J310 equivalent
z60b
J309
4dcm
J309-J310
J309 application note
MMBFJ310
|
PDF
|