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    World Products Inc LZP65N06P

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    LZP65n06

    Abstract: "Power MOSFET" LZP65N06P
    Text: LZP65N06P N-Channel 60V Power MOSFET Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge • Wide Expanded Safe Operating Area Application BVDSS=60V , • DC-DC Converters RDS ON =0.016Ω,


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    LZP65N06P above25 LZP65n06 "Power MOSFET" LZP65N06P PDF

    LZP65n06

    Abstract: No abstract text available
    Text: LZP65N06P N-Channel 60V Power MOSFET Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge • Wide Expanded Safe Operating Area Application BVDSS=60V , • DC-DC Converters RDS ON =0.016Ω,


    Original
    LZP65N06P above25â LZP65n06 PDF