Untitled
Abstract: No abstract text available
Text: Advance Technical Information Standard Power MOSFET IXTH 60N15 VDSS = 150 V ID cont = 60 A Ω RDS(on) = 33 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 150
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60N15
O-247
728B1
123B1
728B1
065B1
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90N15
Abstract: No abstract text available
Text: Advance Technical Information IXTK 90N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 90 A Ω = 16 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150
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90N15
728B1
90N15
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTK 128N15 High Current Mega MOSTMFET VDSS ID25 = 150 V = 128 A Ω = 15 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150
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128N15
O-264
728B1
123B1
728B1
065B1
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180N15
Abstract: No abstract text available
Text: Advance Technical Information IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 9 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150
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180N15
728B1
123B1
728B1
065B1
180N15
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTK 128N15 High Current Mega MOSTMFET VDSS ID25 = 150 V = 128 A Ω = 15 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150
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128N15
O-264
728B1
123B1
065B1
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60N15
Abstract: No abstract text available
Text: Advance Technical Information Standard Power MOSFET VDSS = 150 V ID cont = 60 A Ω RDS(on) = 33 mΩ IXTH 60N15 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 150
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60N15
O-247
728B1
123B1
728B1
065B1
60N15
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75n15
Abstract: No abstract text available
Text: Advance Technical Information IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS
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75N15
75N15
O-247
O-268
O-268
728B1
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Untitled
Abstract: No abstract text available
Text: IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 10 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150 V VGS Continuous
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180N15
O-264
728B1
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180N15
Abstract: 123B16
Text: IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 9 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150 V VGS
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180N15
728B1
123B1
728B1
065B1
180N15
123B16
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Untitled
Abstract: No abstract text available
Text: IXTK 128N15 High Current Mega MOSTMFET VDSS ID25 = 150 V = 128 A Ω = 15 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS
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128N15
O-264
728B1
123B1
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065B1
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IXTH48N15
Abstract: 48n15
Text: Advance Technical Information IXTH 48N15 IXTT 48N15 High Current Power MOSFET VDSS ID25 = 150 V = 48 A Ω = 32 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS
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48N15
48N15
O-247
O-268
O-268
728B1
IXTH48N15
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IXTH75N15
Abstract: 75N15
Text: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20
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75N15
O-247
405B2
IXTH75N15
75N15
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75N15
Abstract: .75N15
Text: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous
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75N15
O-247
728B1
75N15
.75N15
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Untitled
Abstract: No abstract text available
Text: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20
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75N15
O-247
405B2
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96n15
Abstract: No abstract text available
Text: IXTQ 96N15P IXTT 96N15P PolarHTTM Power MOSFET VDSS ID25 = 150 V = 96 A Ω ≤ 24 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 150 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 150
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96N15P
96n15
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diode SM 88A
Abstract: transistor N 343 AD
Text: IXTH 88N15 IXTT 88N15 High Current Power MOSFET V DSS I D25 = = = RDS on 150 V 88 A Ω 22 mΩ N-Channel Enhancement Mode Symbol Test Conditions V DSS V DGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient
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88N15
O-247
728B1
123B1
728B1
065B1
diode SM 88A
transistor N 343 AD
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352AI
Abstract: No abstract text available
Text: Advance Technical Information IXTH 88N15 IXTT 88N15 High Current Power MOSFET V DSS I D25 = = = RDS on 150 V 88 A Ω 22 mΩ N-Channel Enhancement Mode Symbol Test Conditions V DSS V DGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V
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88N15
O-247
O-268
728B1
123B1
728B1
065B1
352AI
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1n2222 general diode
Abstract: 1N2222 1n22 1N2218 1N2219 0880 1N2024 1N2025 1N2027 1N2029
Text: 3869720 GENERAL D IO D E CO RP GENERAL DIODE CORP 86D ~ flb 00326 DE | D T - o / ' f f OODDBSb 7 | ~ ST U D M O U N T ED SILICON POW ER RECTIFIERS . . . cont'd 1 % 10 @ 150 10 @ 150 1 @ 150 1 @ 150 1 @ 150 5 @150 5 @150 0.5 @ 150 0.5 @ 150 0.5 @ 150 1 @ 150
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1N2024
1N2025
1N202S
1N2027
1N2029
1N2030
1N2031
1N2128
1N2128A
1n2222 general diode
1N2222
1n22
1N2218
1N2219
0880
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diode equivalent
Abstract: JANTX1N3293
Text: IO R Government/ Space Products Diode, JAN Equivalent Diode, JAN Equivalent Diode 150 Amps P u t H um bert IR 80-1243 80-1243R Industrial Currant Rating A M ilitary Current Rating (A) Com pliant to M IL-8-19S00 Q ualification 150 150 /246 19000-410-84 150
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IL-8-19S00
1N3289
JAN1N3289
1N3291
JAN1N3291
1N3293
JAN1N3293
DO-205AA
1N3294
JAN1N3295
diode equivalent
JANTX1N3293
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Untitled
Abstract: No abstract text available
Text: ¡Ill sgRi I n t e r n a t io n a l R e c t if ie r Schottky Diodes Pvt Number m 2 v f m o if m eas n-»-raons Fax-onDemand Number 100 150 150 175 (5)(10) (5)(8) (5)(8) (5)(8) 20396 20397 20438 20437 S M B (J2) 50 20 20 5 100 150 150 175 (5)(9) (5)(11) (5)(11)
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10BQ015
10B0040
10BQ060
10BQ100
30BQ015
30BQ040
30BQ060
30BQ100
6TQ035S
6TQ045S
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SCHOTTKY bys 92-50
Abstract: RECTIFIER bys 92-50 BYV 35 BYS 98-50
Text: Epitaxial rectifier diodes Type V r rm Ifa v m t A = 25 °C V A vF Ifs m 10 ms, t,r Ir = Outline max ¡F - 1FAV W tV| = 25 °C VR tv , - a . A V mA ns °c < 0 .3 5 <50 150 111 112 V rh M • BYV 29-500 500 g 100 < 1 .4 ■ BYV 32-150 150 2x10 150 < 1.15 < 0 .6
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NJL5126D
Abstract: NJL5125D NJL1110B NJL1112B NJL1120B NJL1120F NJL1121F NJL1122B NJL112IB NJL6103B
Text: OPTOELECTRONIC DEVICES & MODULES LIGHT EMITTING DIODE TYPE •:MA33MÊt«te«* w m m m m m IF PD VR Xp [mW] H [nm] 150 100 6 940 DESCRIPTION NJL1104B NJL1110B NJL1112B NJL1120B NJL112IB NJL1122B NJL1120F NJL1121F GaAs Infrared LED 150 225 170 170 170 170
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NJL1110B
NJL1112B
NJL1120B
NJL112IB
NJL1122B
NJL1120F
NJL1121F
NJL5155M*
NJL5156M*
NJL5127D
NJL5126D
NJL5125D
NJL1121F
NJL6103B
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MS6511
Abstract: MS5151 Microwave detector diodes 18 GHz Microwave detector diodes MS5121 MS5531 MS5221 MS5211 MS5321 MS6111
Text: 65 SCHOTTKY DIODES PART NUMBER 4 z |F fi NF (db) TEST F R EQ UENC Y VSWR MICROWAVE M IXER DIODES MS5111 MS5121 MS5131 8.0 7.5 7.0 150 300 150-300 150-300 2.3:1 2.3:1 2.0:1 MS5141 MS5151 MS5211 6.5 6.0 8.0 150-300 150-300 150 300 1.8:1 1.5:1 2.3:1 MS5221
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MS5111
MS5121
MS5131
MS5141
MS5151
MS5211
MS5221
MS5231
MS5241
MS5251
MS6511
Microwave detector diodes 18 GHz
Microwave detector diodes
MS5531
MS5211
MS5321
MS6111
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ESJA
Abstract: ESJC
Text: Epitaxial Rectifier Diodes rrm V Ifa vm V Ifs m BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design Ir trr ns V mA = I fAVM tVJ= 25°C Vr = VHRM 150 150 80 < 1,15 < 1,15 <1,3 <0,6 <0,6 <0,6 V rrm If s m IpAVM kV A t=8,3ms tvj = 25°C mA tA = 25°C
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DD21liD
ESJA
ESJC
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