mjg-2
Abstract: M-prep neutralizer instruction bulletin b-130 "Strain Gage" M-BOND 600 M-BOND 610 FOR TRANSDUCERS M-BOND m-bond 450 b mylar tape strain gage
Text: M-Bond 450 For Transducers Vishay Micro-Measurements Strain Gage Adhesives for Transducer Applications OTHER ACCESSORIES USED IN AN M-BOND 450 INSTALLATION: M-Bond 450 • • • • • • • • • • CSM Degreaser or GC-6 Isopropyl Alcohol Silicon-Carbide Paper
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Original
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GT-14
B-130,
B-152,
21-Aug-03
mjg-2
M-prep neutralizer
instruction bulletin b-130
"Strain Gage"
M-BOND 600
M-BOND 610 FOR TRANSDUCERS
M-BOND
m-bond 450 b
mylar tape
strain gage
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PDF
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dupont mylar rohs
Abstract: mjg-2 M-prep neutralizer mylar tape dupont mylar Vishay GT-14 GT-14 pressure pads
Text: M-Bond 450 Vishay Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND 450 INSTALLATION: • • • • • • • • • • CSM Degreaser or GC-6 Isopropyl Alcohol Silicon-Carbide Paper M-Prep Conditioner A M-Prep Neutralizer 5A
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Original
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GT-14
B-152,
10-Jan-03
dupont mylar rohs
mjg-2
M-prep neutralizer
mylar tape
dupont mylar
Vishay
GT-14 pressure pads
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PDF
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Vishay Conditioner A
Abstract: GT-14 dupont mylar rohs m-bond 450 b
Text: M-Bond 450 Vishay Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND 450 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol • Silicon-Carbide Paper • M-Prep Conditioner A RoHS • M-Prep Neutralizer 5A COMPLIANT • GSP-1 Gauze Sponges
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Original
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GT-14
08-Apr-05
Vishay Conditioner A
dupont mylar rohs
m-bond 450 b
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M-Bond 450 Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND 450 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol Silicon-Carbide Paper M-Prep Conditioner A M-Prep Neutralizer 5A GSP-1 Gauze Sponges CSP-1 Cotton Applicators
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Original
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GT-14
B-152,
24-Jun-10
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PDF
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cancer data
Abstract: 14032 m-bond 450 b
Text: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond 450 Part A November 18, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM055G 919-365-3800 CHEMTREC 1-800-424-9300 U.S. 703-527-3887 (Outside U.S.)
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Original
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MGM055G
805-FRM011
cancer data
14032
m-bond 450 b
|
PDF
|
transistor A 27611
Abstract: 27611 LD50 ketone 14033
Text: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond 450 Part B November 18, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM056G 919-365-3800 CHEMTREC 1-800-424-9300 U.S. 703-527-3887 (Outside U.S.)
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Original
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MGM056G
805-FRM011
transistor A 27611
27611
LD50
ketone
14033
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TR5270 LEDs CxxxTR5270-Sxx00 175- m CxxxTR5270-Sxx00-3 (250- m) Data Sheet Cree’s TR5270 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting
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Original
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TR5270â
CxxxTR5270-Sxx00
CxxxTR5270-Sxx00-3
TR5270
TR5270
TR430
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PDF
|
Untitled
Abstract: No abstract text available
Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD February 2009 - Rev 15-Feb-09 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing
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Original
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P1026-BD
15-Feb-09
MIL-STD-883
XP1026-BD-000V
XP1026-BD-EV1
XP1026-BD
|
PDF
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max cw 4004
Abstract: XP1026-BD-EV1 30SPA0553 DM6030HK P1026-BD XP1026-BD XP1026-BD-000V ID213
Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD January 2010 - Rev 25-Jan-10 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing
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Original
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P1026-BD
25-Jan-10
MIL-STD-883
pa026-BD-EV1
XP1026-BD
max cw 4004
XP1026-BD-EV1
30SPA0553
DM6030HK
P1026-BD
XP1026-BD-000V
ID213
|
PDF
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alpha detector
Abstract: CDC7622 on/gold detectors circuit
Text: Universal Chip Mixer and Detector Schottky Barrier Diodes EBA lpha CDX76XX, CME7660 Features • For Microwave M IC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 W ire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector
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OCR Scan
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CDX76XX,
CME7660
CDB7619
3E-09
1E-11
1E-05
1E-05
CDC7622
CDB7619
alpha detector
CDC7622
on/gold detectors circuit
|
PDF
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180 Degree hybrid ku band
Abstract: No abstract text available
Text: Universal Chip Mixer and Detector SchotUcy Barrier Diodes EBAIph CDX76XX, CME7660 Features • For Microwave M IC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector
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OCR Scan
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CDX76XX,
CME7660
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
180 Degree hybrid ku band
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Universal Chip Mixer and EHA lp h a Detector Schottky Barrier Diodes CDX76XX, CME7660 Features • For Microwave MIC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector
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OCR Scan
|
CDX76XX,
CME7660
comm69
1E-05
CDC7622
3E-06
1E-11
CDB7619
3E-09
|
PDF
|
NE9004
Abstract: NE900400 NE900474-15 NE900474-13 NE900400G NE9001 MC 88000
Text: Ku-BAND POWER GaAs MESFET FEATURES NE9004 SERIES NE900474-13.-15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER CLASS A OPERATION HIGH POWER ADDED EFFICIENCY EMPLOYS P.H.S. PLATED HEAT SINK AND VIA HOLE GROUNDING BROAD BANDWIDTH INPUT OF PACKAGED DEVICE PARTIALLY MATCHED
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OCR Scan
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NE9004
NE900474-13
NE900
NE9000,
NE9001
NE9002.
AN-1001
L427525
NE900400
NE900474-15
NE900400G
MC 88000
|
PDF
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Chip Advanced Tech
Abstract: XP1006 XP1006 bonding
Text: XP1014-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Features • XP1006 Driver Amplifier • 18.0 dB Small Signal Gain • +31.0 dBm Saturated Output Power • 35% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing
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Original
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XP1014-BD
XP1006
MIL-STD-883
01-Sep-10
XP1014
I0005129
Chip Advanced Tech
XP1006 bonding
|
PDF
|
|
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P1014
Abstract: xp1014 84-1LMI XP1006 bonding GHz HPA
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 April 2006 - Rev 14-Apr-06 Features XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit
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Original
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APH478
P1014
14-Apr-06
XP1006/7
MIL-STD-883
XP1014
I0005129
P1014
xp1014
84-1LMI
XP1006 bonding
GHz HPA
|
PDF
|
2N6580
Abstract: 2N6583 2N6581 OTC433C OTC4830 OTC483Q SVT400-3 SVT400-5
Text: OPTEK TECHNOLOGY INC MAE D • aCJDlBflS blS ■ Product Bulletin OHC4830 August 1990 OTK W NPN Power Switching Transistor Die .O P T E K -r-35-\°\ Type OTC483Q 450V, 5A Applications • • • • • Switching Regulators PWM Inverters Motor Controls
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OCR Scan
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OHC4830
OTC4830
OTC433C)
4830-400L
4830-400H
OTC483Q
2N6580,
2N6581,
2N6583,
SVT400-3,
2N6580
2N6583
2N6581
OTC433C
SVT400-3
SVT400-5
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PDF
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lg 5528
Abstract: No abstract text available
Text: MwT-6 GaAs FET DEVICE PRELIMINARY M IC R O W A V E TECHNOLOGY MICROWAVE 4268Solar Way; Fremont,. CA 94538 415-651-6700 FAX 415-651-2208 TECHNOLOGY 37E D blSMlüQ GQDGÜ3S S MRUV FEATURES • 0.3 MICRON REFRACTORY METAL/GOLD GATE • AIR BRIDGE TECHNOLOGY • DIAMOND-UKE CARBON DLC PASSIVATION
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OCR Scan
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4268Solar
lg 5528
|
PDF
|
t6060
Abstract: T-6060
Text: OPTEK TECHNOLOGY INC 40E d • L ? ciasaG oGG^ai a ta ■ otk I c iv Product Bulletin OTC1015 August 1990_ NPN Power Darlington Die "T'33 ^ Types OTC1015, OTC6030, OTC6050 450V, 20A Schematic Note 7 Base 1 o i - K Q1
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OCR Scan
|
OTC1015
OTC1015,
OTC6030,
OTC6050
OTC6030
t6060
T-6060
|
PDF
|
SVT-6060
Abstract: oms 450 SVT6000 SVT6060 SVT-6000 2N3467 DTC6050 OTC1015 OTC6030 OTC6050
Text: OPTEK TE CH NO LOG Y INC Product Bulletin OTC1015 August 1990_ MAE D L h a s s a 000130^ OTK ata SQ7. u r I c rv NPN Power Darlington Die Types OTC1015, OTC6030, QTC6050 450V, 20A Collector Schematic Note 7 Base 1 0- n r “ *! Q1 Q2 D2 R1
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OCR Scan
|
OTC1015
OTC1015,
OTC6030,
OTC6050
OTC1015
OTC6030
OTC6050
U1K50nS
M4307
200fiHY
SVT-6060
oms 450
SVT6000
SVT6060
SVT-6000
2N3467
DTC6050
OTC6030
|
PDF
|
P1014
Abstract: DM6030HK TS3332LD XP1006 XP1014 XP1014-BD-000V XP1006 bonding
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD August 2007 - Rev 03-Aug-07 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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Original
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P1014-BD
03-Aug-07
XP1006
MIL-STD-883
XP1014
I0005129
XP1014-BD-000V
XP1014-BD-EV1
XP1014
P1014
DM6030HK
TS3332LD
XP1014-BD-000V
XP1006 bonding
|
PDF
|
x band diode detector waveguide
Abstract: CME7660-000 DIODE RL 207 8E08 detector doppler ka CDB7619-000 CDC7630-000 RF 207 Silicon Detector Diodes Alpha Industries
Text: Silicon Schottky Barrier Detector Diodes Features 3 Both P–Type and N–Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam–Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes
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Original
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|
PDF
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2N6580
Abstract: 2N6583 2N6581 OTC4330 OTC4830 OTC483Q SVT400-3
Text: OPTEK TECHNOLOGY INC MAE D • 1,7=15560 0 0 0 1 3 6 5 b ia ■ Product Bulletin OHC4830 August 1990 OTK i^ lj,P ° T E K NPN Power Switching Transistor Die -r-ss-w Type OTC4830 450V, 5A Applications • • • • • Switching Regulators PWM Inverters Motor Controls
|
OCR Scan
|
13flS
OHC4830
OTC483Q
OTC4330
OTC4830
2N6580,
2N6581,
2N6583,
SVT400-3,
SVT400-5
2N6580
2N6583
2N6581
OTC4330
SVT400-3
|
PDF
|
silicon carbide
Abstract: KS5450A-M KS5450A-N KS5450A-O KS5450A-P KS5450A-Q IC TECHNOLOGY LED pulse derating curve silicon carbide LED
Text: InGaN•SiC Technology The Leader in Silicon Carbide Solid State Technology KSx450x-x Features l l l l High performance 3.5mw optical power 450nm Deep Blue Single Wire Bond Structure Class ESD Rating Ô3 Applications l l l l l l Outdoor LED Video Displays
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Original
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KSx450x-x
450nm
silicon carbide
KS5450A-M
KS5450A-N
KS5450A-O
KS5450A-P
KS5450A-Q
IC TECHNOLOGY
LED pulse derating curve
silicon carbide LED
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit
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Original
|
APH478
P1014
01-Nov-06
XP1006
MIL-STD-883
XP1014
I0005129
XP1014-BD-000W
XP1014-BD-000V
XP1014-BD-EV1
|
PDF
|
