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    M.P TRANSISTOR Search Results

    M.P TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    M.P TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RILP0108ESP-xSR

    Abstract: RILP0108ESA-xSR R1LV0816A r1lv0808 RILP0108ESA-xSI RILP0108ESF-xSR RILP0108E M5M5256DFP-70LLI M5M5256D M5M5V108D
    Text: Renesas Memories General Presentation October 2010 Renesas Low Power SRAM Renesas Electronics Corporation Mixed Signal IC Business Div. Analog & Power Devices Business Unit 10/01/2010 1-1 Rev.2.00 2010. Renesas Electronics Corporation. All rights reserved.


    Original     		PDF R1WV6416R RILP0108ESP-xSR RILP0108ESA-xSR R1LV0816A r1lv0808 RILP0108ESA-xSI RILP0108ESF-xSR RILP0108E M5M5256DFP-70LLI M5M5256D M5M5V108D

    R1LV1616

    Abstract: ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817
    Text: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


    Original     		PDF R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls R1WV6416R R1LV1616 ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817

    ECU car

    Abstract: 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI
    Text: [Preliminary] This product is under development and its specification might be changed without any notice. R1LV0816ASD -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit / 1M word x 8bit REJ03C0397-0001 Preliminary Rev.0.01 2009.12.08 Description The R1LV0816ASD is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit,


    Original     		PDF R1LV0816ASD 16bit REJ03C0397-0001 288-words 16-bit, 52pin R1WV6416R ECU car 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI

    diode BB102

    Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


    Original     		PDF ADE-A08-003G diode BB102 RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet

    3SK238

    Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


    Original     		PDF ADE-A08-003E 3SK238 g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ

    HITACHI SMD TRANSISTORS

    Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,


    Original     		PDF ADE-A08-003E HITACHI SMD TRANSISTORS small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015

    BiFET Processes

    Abstract: No abstract text available
    Text: Low Turn-On Voltage Schottky Diode in InGaP/GaAs HBT/BiFET Processes Cristian Cismaru and Peter J. Zampardi* Skyworks Solutions, Inc., 2427 Hillcrest Drive, Newbury Park, CA 91320 [email protected], 805.480.4663 *formerly of Skyworks Keywords: Tantalum Nitride, Schottky, HBT, BiFET, GaAs, InGaP.


    Original     		PDF

    NONLINEAR MODEL LDMOS

    Abstract: No abstract text available
    Text: Switch-Mode RF PAs Using Chireix Outphasing Simplified Theory and Practical Application Notes by Robin Wesson, Base Station System Architect, RF Power Innovation, NXP Semiconductors Mark van der Heijden, Senior Scientist, RF Power Innovation, NXP Semiconductors


    Original     		PDF

    electrical schematic diagram WELDER

    Abstract: schematic WELDER schematic diagram resistance welder "IEEE J. Solid State Circuits, Vol. SC-11" ad590s AD590-SPECIFICATIONS ad590 AD590 APPLICATIONS AD590JH schematic WELDER capacitor
    Text: a FEATURES Linear Current Output: 1 ␮A/K Wide Range: –55؇C to +150؇C Probe Compatible Ceramic Sensor Package Two Terminal Device: Voltage In/Current Out Laser Trimmed to ؎0.5؇C Calibration Accuracy AD590M Excellent Linearity: ؎0.3؇C Over Full Range (AD590M)


    Original     		PDF AD590M) AD590* AD590 AD590s AD590 C426e electrical schematic diagram WELDER schematic WELDER schematic diagram resistance welder "IEEE J. Solid State Circuits, Vol. SC-11" AD590-SPECIFICATIONS AD590 APPLICATIONS AD590JH schematic WELDER capacitor

    Specifications-AD590

    Abstract: ad590s AD590-SPECIFICATIONS "A Two-Terminal IC Temperature Transducer"
    Text: BACK a FEATURES Linear Current Output: 1 ␮A/K Wide Range: –55؇C to +150؇C Probe Compatible Ceramic Sensor Package Two Terminal Device: Voltage In/Current Out Laser Trimmed to ؎0.5؇C Calibration Accuracy AD590M Excellent Linearity: ؎0.3؇C Over Full Range (AD590M)


    Original     		PDF AD590M) AD590 AD590 AD590s C426e Specifications-AD590 AD590-SPECIFICATIONS "A Two-Terminal IC Temperature Transducer"

    AD590

    Abstract: AD590S schematic diagram resistance welder schematic WELDER capacitor schematic WELDER AD590-SPECIFICATIONS electrical schematic diagram WELDER schematic WELDER thermocouple ad590 application "IEEE J. Solid State Circuits, Vol. SC-11"
    Text: a FEATURES Linear Current Output: 1 ␮A/K Wide Range: –55؇C to +150؇C Probe Compatible Ceramic Sensor Package Two Terminal Device: Voltage In/Current Out Laser Trimmed to ؎0.5؇C Calibration Accuracy AD590M Excellent Linearity: ؎0.3؇C Over Full Range (AD590M)


    Original     		PDF AD590M) AD590 AD590 AD590s C426e schematic diagram resistance welder schematic WELDER capacitor schematic WELDER AD590-SPECIFICATIONS electrical schematic diagram WELDER schematic WELDER thermocouple ad590 application "IEEE J. Solid State Circuits, Vol. SC-11"

    AD590

    Abstract: ad590 application controlling ic lm311 specifications of ic 1408 AD2040 ad590s human detection sensors schematic diagram IC 4051 data sheet AD581 AD590J
    Text: 2-Terminal IC Temperature Transducer AD590 FEATURES PIN CONFIGURATIONS Linear current output: 1 A/K Wide temperature range: −55°C to +150°C Probe-compatible ceramic sensor package 2-terminal device: voltage in/current out Laser trimmed to ±0.5°C calibration accuracy AD590M


    Original     		PDF AD590 AD590M) AD590 H-03-1 ad590 application controlling ic lm311 specifications of ic 1408 AD2040 ad590s human detection sensors schematic diagram IC 4051 data sheet AD581 AD590J

    r411K

    Abstract: "IEEE J. Solid State Circuits, Vol. SC-11"
    Text: 2-Terminal IC Temperature Transducer AD590 Data Sheet FEATURES PIN CONFIGURATIONS Linear current output: 1 A/K Wide temperature range: −55°C to +150°C Probe-compatible ceramic sensor package 2-terminal device: voltage in/current out Laser trimmed to ±0.5°C calibration accuracy AD590M


    Original     		PDF AD590M) AD590 AD590 H-03-1 r411K "IEEE J. Solid State Circuits, Vol. SC-11"

    AD7228ABN

    Abstract: A0722
    Text: lc 2mos A N A LO G DEVICES FEATURES Eight 8-Bit DACs w ith Output Amplifiers Operates w ith Single or Dual Supplies M.P Compatible 95ns WR Pulse No User Trims Required Skinny 24-Pin DIPs, SOIC, and 28-Terminal Surface M ount Packages Octal 8-Bit DAC AD7228A


    OCR Scan     		PDF 24-Pin 28-Terminal AD7228A AD7228A AD7228A* 085A/Z80 68008Interface AD7228ABN A0722

    MA4F600-298

    Abstract: transistor bul 3040 MA4F600 bul 3040 fet ft 30 GHZ
    Text: M/A-COn SEMICONDUCTOR "t 3 D~| SbMBSlM ODDDbMb T r- Am 3i -ss MA4F600 Series Gallium Arsenide Low Noise Field Effect Transistor GaAs FET Preliminary Data Sheet Description and Applications The MA4F600 series of GaAs FETs is a low cost 0.8 ¡im gate length GaAs FET. The low noise


    OCR Scan     		PDF MA4F600 90X90 MA4F600-298 transistor bul 3040 bul 3040 fet ft 30 GHZ

    Untitled

    Abstract: No abstract text available
    Text: 5642214 N/A-CON m/a-com semiconductor SEMICONDUCTOR 930 T3 00638 PE|St4ESm T '3 < 7 . o DDDDtaa s ' 0 V~ MA4F200 Series ûallium Arsenide Power Field Effect Transistor GaAs FET Preliminary Data Sheet Description and Applications The MA4F200 series is a 1 micron recessed gate


    OCR Scan     		PDF MA4F200

    Untitled

    Abstract: No abstract text available
    Text: ñ / A - C O M ADVANCE» Sñ DE |sb4Slfl3 Q0D00D5 5 D MA4F200 Seríes Gallium Arsenide Power Field Effect Transistor GaAs FET m i Preliminary Data Sheet Description and Applications The MA4F200 series is a 1 micron recessed gate structure GaAs power FET for am plifier applica­


    OCR Scan     		PDF Q0D00D5 MA4F200

    MICROWAVE ASSOCIATES

    Abstract: pa 3029 b Dielectric Resonator Oscillator DRO high power FET transistor s-parameters 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters 5218 chip ic TIP 298
    Text: M/A-C'OM' SEMICONDUCTOR _ci3 DE |St.45E] M □□00L30 S MA4F001 Series ¡88 Gallium Arsenide Field ^ Effect Transistors % S t su* mi IP I i Description a The MA4F001 series of gallium arsenide fieldeffect transistors (GaAs FETs) is a series of low power Schottky barrier gate devices with a 1


    OCR Scan     		PDF 00L30 MA4F001 4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300 MICROWAVE ASSOCIATES pa 3029 b Dielectric Resonator Oscillator DRO high power FET transistor s-parameters 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters 5218 chip ic TIP 298

    FET transistors with s-parameters

    Abstract: MICROWAVE ASSOCIATES MA4F600 f TIP 122 transistor MA4F004-918 ma4f004
    Text: M/A-COM SEMICONDUCTOR “TÍ »T|st,M2al4 000Db25 t. J~. ¿S' AߣR MA4F004 Series Gallium Arsenide Field Effect Transistor Description The MA4F004 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of Schottky barrier devices with a 1 micron length X


    OCR Scan     		PDF 000Db25 MA4F004 4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300 FET transistors with s-parameters MICROWAVE ASSOCIATES MA4F600 f TIP 122 transistor MA4F004-918

    MICROWAVE ASSOCIATES

    Abstract: 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters TIP 298 MA4F600
    Text: n/A-COn ADVANCED Sfl DE J S b 4 E l f l 3 □□□□017 T jp D J- 3t~Z? MfoCCA MA4F001 Series Gallium Arsenide Field Effect Transistors Description The MA4F001 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of low power Schottky barrier gate devices with a 1


    OCR Scan     		PDF MA4F001 4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300 MICROWAVE ASSOCIATES 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters TIP 298 MA4F600

    MA4F004

    Abstract: No abstract text available
    Text: Vv M/A-COM ADVANCED DE |st,4aifl3 ODDDDCH □ | ' 7 ' 3 / ' ^ 5 A ßm MA4F004 Series Gallium Arsenide Field Effect Transistor Description Features The MA4F004 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of Schottky barrier devices with a 1 micron length X


    OCR Scan     		PDF MA4F004 Number4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300

    Untitled

    Abstract: No abstract text available
    Text: GEC PLESSEY w . S E M I C O N D U C T O R S DS 3303 -1 NJ8820GG FREQUENCY SYNTHESISER PROM INTERFACE The NJ8820GG is a synthesiser circuit fabricated w ith the 2-micron CMOS process and is capable of achieving high sideband attenuation and low noise performance. The circuit


    OCR Scan     		PDF NJ8820GG NJ8820GG 470pF,

    AD590

    Abstract: "IEEE J. Solid State Circuits, Vol. SC-11" ad590 application thermocouple multiplexer ad590s "A Two-Terminal IC Temperature Transducer" ptat temperature sensor AD591 IEEE J. Solid State Circuits, Vol. SC AD590K
    Text: ANALOG ► DEVICES Two-Terminal 1C Temperature Transducer FEATURES Linear Current O utput: 1juA/ K Wide Range: -55°C to +150°C Two-Terminal Device: Voltage In/Current Out Laser Trimmed to ±1°C Calibration Accuracy A D 590L Excellent Linearity: ±0.5cC Over Full Range (AD 590K, L)


    OCR Scan     		PDF AD590L) AD590K, AD590 -55cC "IEEE J. Solid State Circuits, Vol. SC-11" ad590 application thermocouple multiplexer ad590s "A Two-Terminal IC Temperature Transducer" ptat temperature sensor AD591 IEEE J. Solid State Circuits, Vol. SC AD590K

    max690a

    Abstract: MAX690ACPA
    Text: MÄY 9 7 1903 19-4333; Rev 2; 4/93 M icroprocessor Supervisory C ircuits F e a tu re s ♦ Watchdog Timer -1 .6 s e c Timeout These parts provide four functions: ♦ Battery-Backup Power Switching 1 A reset output during power-up, power-down, and brownout conditions.


    OCR Scan     		PDF MAX690A/MAX802L7MAX805L MIL-STD-883. max690a MAX690ACPA