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    M106 TRANSISTOR Search Results

    M106 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    M106 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AM0608-200

    Abstract: AM0608-450 M102 M106 S042 SD1563 SD1565
    Text: SILICON POWER TRANSISTORS UHF PULSED TRANSISTORS SGS-THOMSON pulsed transistors are characterized for a variety of pulse widths in specific UHF frequency bands. All devices have internal impedance matching and are housed in hermetic packages. The long-term reliability provided by


    Original     		SD1563 SD1565 SD1565 AM0608-200 AM0608-450 AM0608-200 AM0608-450 M102 M106 S042 SD1563 PDF

    MSC1651

    Abstract: No abstract text available
    Text: MS2176 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS TCASE = 25°C Symbol VCBO VCES VEBO IC


    Original     		MS2176 D01-04 MSC1651 PDF

    Untitled

    Abstract: No abstract text available
    Text: i, Dnc. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. SD1563 RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS 350 WATTS @ lO^iSEC PULSE WIDTH, 10% DUTY CYCLE 300 WATTS @ 250^SEC PULSE WIDTH, 10% DUTY CYCLE 9.5 dB MIN. GAIN


    Original     		SD1563 SD1563 S91/S9C- Q/900' 22/SO& 6/06C' S3INDai33T3aa3IH PDF

    1DI300Z-100

    Abstract: M106 TRANSISTOR M106 300a 1000v DIODE
    Text: 1DI300Z-100 300A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 高耐圧 高耐圧 High Voltagee 内臓 Including Free Wheeling Diode


    Original     		1DI300Z-100 1DI300Z-100 M106 TRANSISTOR M106 300a 1000v DIODE PDF

    TRANSISTOR C 460

    Abstract: 1DI300Z-120 M106 TRANSISTOR dt300 DC motor 150 Nm fuji 1di300z-120
    Text: 1DI300Z-120 300A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 高耐圧 HHigh Voltage 内蔵 ﾌﾘｰﾎｲﾘﾝｸﾞﾀﾞｲｵｰﾄﾞ内蔵


    Original     		1DI300Z-120 800mA TRANSISTOR C 460 1DI300Z-120 M106 TRANSISTOR dt300 DC motor 150 Nm fuji 1di300z-120 PDF

    TRANSISTOR C 460

    Abstract: fast recovery Diode 1200V 200A 1di200z-120
    Text: 1DI200Z-120 200A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 高耐圧 HHigh Voltage 内蔵 ﾌﾘｰﾎｲﾘﾝｸﾞﾀﾞｲｵｰﾄﾞ内蔵


    Original     		1DI200Z-120 800mA 280mA TRANSISTOR C 460 fast recovery Diode 1200V 200A 1di200z-120 PDF

    1DI300Z-120

    Abstract: 1DI300Z120 M106
    Text: 1DI300Z-120 300A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 高耐圧 HHigh Voltage 内蔵 ﾌﾘｰﾎｲﾘﾝｸﾞﾀﾞｲｵｰﾄﾞ内蔵


    Original     		1DI300Z-120 25to30kgfcm] 1DI300Z-120 1DI300Z120 M106 PDF

    TRANSISTOR C 460

    Abstract: 1DI300Z-140
    Text: 1DI300Z-140 300A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 高耐圧 HHigh Voltage 内蔵 ﾌﾘｰﾎｲﾘﾝｸﾞﾀﾞｲｵｰﾄﾞ内蔵


    Original     		1DI300Z-140 E829883 25to35kgfcm] 13to16kgfcm] 35to40kgfcm] TRANSISTOR C 460 1DI300Z-140 PDF

    M106

    Abstract: SD1563 Pulse capability
    Text: SD1563 RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS . . . . . 350 WATTS @ 10µSEC PULSE WIDTH, 10% DUTY CYCLE 300 WATTS @ 250µSEC PULSE WIDTH, 10% DUTY CYCLE 9.5 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR


    Original     		SD1563 SD1563 M106 Pulse capability PDF

    M106

    Abstract: SD1563
    Text: SD1563 RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS . . . . . 350 WATTS @ 10µSEC PULSE WIDTH, 10% DUTY CYCLE 300 WATTS @ 250µSEC PULSE WIDTH, 10% DUTY CYCLE 9.5 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR


    Original     		SD1563 SD1563 M106 PDF

    1DI200Z-120

    Abstract: M106 1DI200Z-120 FUJI
    Text: 1DI200Z-120 200A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 高耐圧 HHigh Voltage 内蔵 ﾌﾘｰﾎｲﾘﾝｸﾞﾀﾞｲｵｰﾄﾞ内蔵


    Original     		1DI200Z-120 25to35kgfcm] 1DI200Z-120 M106 1DI200Z-120 FUJI PDF

    1DI200Z-100

    Abstract: M106 m460 1DI200Z100
    Text: 1DI200Z-100 200A FUJI POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: パワートランジスタモジュール POWER TRANSISTOR MODULE [mm] 特長 ：Features 特長： 高耐圧 高耐圧 High Voltagee 内臓 Including Free Wheeling Diode


    Original     		1DI200Z-100 1DI200Z-100 M106 m460 1DI200Z100 PDF

    1DI300Z-140

    Abstract: M106 1di30
    Text: 1DI300Z-140 300A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 高耐圧 HHigh Voltage 内蔵 ﾌﾘｰﾎｲﾘﾝｸﾞﾀﾞｲｵｰﾄﾞ内蔵


    Original     		1DI300Z-140 25to35kgfcm] 1DI300Z-140 M106 1di30 PDF

    M106 TRANSISTOR

    Abstract: 1di200z-120 1di200
    Text: /\°7 — x / W 7s / Power Devices z v u - x - io o o Z series high-speed switching 1000 volts class power transistor modules m a Device type Vme> VCEX Ic Cont Amps. Pc tlFE Min : . Vce Amps. Volts >C te M r t ' t W k SwitchingImveiMax.). I ' i - j ' T - y


    OCR Scan     		2DI30Z-100 2DI50Z-100 2DI75Z-100 2DI100Z-100 2DI150Z-100 1DI200Z-100 1DI300Z-100 Page62, 1400M 2DI50Z-140 M106 TRANSISTOR 1di200z-120 1di200 PDF

    1DI400A-120

    Abstract: 1DI300A120 2DI75A120 2DI50Z 2DI75z120 1di200 1DI200ZP-120 ET1275 1DI300ZP-120
    Text: COL LME R S E M I C O N D U C T O R INC S 5 3 û 7 c12 0Q01S73 b ? l • COL MêE » 'T 'b 'b 'Z O \ Power Darlington Modules s 1000 VOLTS Device Type V cbo V ceo V CEO (su s Volts Volts Volts Ic cont. Amps Pc Watts (perxstr) h ra @ min Ic VcE Amps. Volts


    OCR Scan     		0Q01S73 2DI30Z-100 2DI50Z-100 2DI75Z-100 2DI100Z-100 2DI150Z-100 1DI200Z-140 1DI300Z-140 2DI50Z-140 2DI75Z-140 1DI400A-120 1DI300A120 2DI75A120 2DI50Z 2DI75z120 1di200 1DI200ZP-120 ET1275 1DI300ZP-120 PDF

    M102

    Abstract: M106 sd15 M105 M119 S042 SD1474 SD1511-08
    Text: SILICON POWER TRANSISTORS M KNSISTORS SGS-THIOMSON pulsed transistors are characterized for a variety of pulse widths in specific UHF frequency bands. All devices have internal impedance matching and are housed in hermetic packages. The long-term reliability


    OCR Scan     		SD1511-08* SD1474' SD1563 SD15641 SD1565 AM0608-020 AM0608-070 AM0608-200 AM0608-450 AM0710-300 M102 M106 sd15 M105 M119 S042 SD1474 SD1511-08 PDF

    1DI100MA-050

    Abstract: 2d175m-120 6DI20MS-050 fuji darlington module 6di50m-120 1DI100MA 1DI100MA050 2DI50M-050 1DI100 M613
    Text: H igh H f e Series Darlington Modules Ratings and Characteristics Type Single Darlington Modules 600V Dual Darlington Modules 600V Six Pack Darlington Modules 600V SIL Six Pack Darlington Modules 600V v CE0 sus IV) vCEX(sus) <V) •c (A) hFE (min) •c (A)


    OCR Scan     		1DI30MA-050 1DI50MA-050 1DI100MA-050 1DI200MA-050 1DI300M-050 1DI400M-050 223A7C DD2S21 2d175m-120 6DI20MS-050 fuji darlington module 6di50m-120 1DI100MA 1DI100MA050 2DI50M-050 1DI100 M613 PDF

    EVL31-050

    Abstract: 1DI500A-030 EVM31-050A EVK75-050 1D500A-030 EVK31-050 1DI400D-100 ETK81-050 1DI300D-100 2DI100D-100
    Text: COLLHER SEMICONDUCTOR INC MAE D 223 67* 12 D0 DLS7 5 7 3 5 Power Darlington Modules 'T - 3 3 - Z ° ï ICOL <s 200, 300 AND 500 VOLTS Device type VCEO VCBO volts VCEO Volts sus Volts Ic cont. Amps Pc Watts (perxstr) hre @ Ic min Amps. Switching time (max.)


    OCR Scan     		ETG81 ETK81-050 ETK85-050 ETL81-050 ETN81-0553 EV1234 2DI50D-100 2DI75D-100 EV1255 2DI100D-100 EVL31-050 1DI500A-030 EVM31-050A EVK75-050 1D500A-030 EVK31-050 1DI400D-100 1DI300D-100 PDF

    M106 TRANSISTOR

    Abstract: M106 40kg-cm
    Text: 1-Pack BJT 1200 V 200 A F U JI SO M STG SDe 1 D 2 I - Z 1 2 ! Outline Drawings POWER TRANSISTOR MODULE 13 Features Pm *3»8 • i i iHL High Voltage • U • ASO £*/£*.' • ax — KrtJK 21 including Free Wheeling Diode 29 ? È ^ \T B Excellent Safe Operating Area


    OCR Scan     		200Z-120 E82988 Tj-125Â M106 TRANSISTOR M106 40kg-cm PDF

    M1041

    Abstract: BU103 af87 vn 530 sp etn35-030 transistor bu M20-96 BU 103
    Text: MOLD TYPE BIPOLAR TRANSISTORS •■ Dimensions K mm TO-220AB TO-220F17 TO-22QF15 # AF90-271 (AF93-281) (AF90-270) 4.5 4.5 1 4 .5 ± 0.2 2.7 ±0.2 1.3 M j" ! i *3 .2 ’ 1 2 3 1.2 1.2 2.54 2 7 1 : Baee 2 : Collector 3 : Emitter 1 : Base 2 : Collector 3 : Emitter


    OCR Scan     		O-220AB O-22QF15 O-220F17 AF90-271) AF93-281) AF90-270) AF90-269) AF90-268) SD00343M) ETN31-055 M1041 BU103 af87 vn 530 sp etn35-030 transistor bu M20-96 BU 103 PDF

    6di15s-050

    Abstract: 6DI20MS-050 6DI15MS050 6di15s M114 M117 1DI300MN-050 6di15s-05 1DI300ZP-120 6DI15S050
    Text: BIPOLAR TRANSISTOR MODULES Ratings and Specifications 3 High-speed switching 1400 volts class power transistor modules • Suited fo r m otor control applications w ith 575V AC input. • Power transistors and free wheels are built into one package. • Wide SOA w ith high-speed sw itching _


    OCR Scan     		2DI50Z-140 2DI75Z-140 2DI100Z 2DI1507 1DI300Z 6DI10MS-050 6DI15S 6DI15MS050 6DI20MS-050 6DI15S-050 M114 M117 1DI300MN-050 6di15s-05 1DI300ZP-120 6DI15S050 PDF

    EVL31-050

    Abstract: EVK31-050 1DI500A-030 1DI200D-100 ET127 ETK81-050 1DI200D100 EVL31-055 ETL81-050 ETN81-055
    Text: COLLHER SEMICONDUCTOR INC MAE D 223 67* 12 D0 DLS7 5 7 3 5 Power Darlington Modules 'T - 3 3 - Z ° ï ICOL <s 200, 300 AND 500 VOLTS Device type VCEO VCBO volts VCEO Volts sus Volts Ic cont. Amps Pc Watts (perxstr) hre @ Ic min Amps. Switching time (max.)


    OCR Scan     		ETG81 ETK81-050 ETK85-050 ETL81-050 ETN81-055 EV1234 2DI50D-100 2DI75D-100 EV1255 2DI100D-100 EVL31-050 EVK31-050 1DI500A-030 1DI200D-100 ET127 1DI200D100 EVL31-055 PDF

    1DI500A-030

    Abstract: 2DI75S-050A EVK75-050
    Text: C O L L PI E R SEMICONDUCTOR INC Mf i E D d d d i s 72 ?3S 'T -3 3 -2 ^ Power Darlington Modules « c o l s 200, 300 AND 500 VOLTS VCEO Device type VCBO Volts VCEO Volts (sus Volts Ic cont. Amps Pc Watts (perxstr) hre @ Ic min Amps. VCE Volts Switching time (max.)


    OCR Scan     		ETL81-050 ETN81-055 1DI240A-055 1DI200Z-100 1DI300Z-100 1DI500A-030 2DI75S-050A EVK75-050 PDF

    1DI500A-030

    Abstract: 2DI75S-050A 1DI200D-100 1DI200D100 1di500a EVK75-050 EVG31-050 EVM31-050A ETK85-050 1DI240A-055
    Text: Power Darlington Modules § 200, 300 AND 500 VOLTS Device Type VcBO VCEO Volts Volts VcEO Ic (sus Volts cont. Amps Pc Watts (pe rx str) hre @ Ic min Amps. Switching tim e (max.) ton ts tf ^sec. usee. jisec. VcE Volts Package SINGLE DARLINGTON MODULES (ISOLATED)


    OCR Scan     		ETG81 ETK81-050 ETK85-050 ETL81-050 ETN81 1DI240A-055 ETN85-050 1DI480A-055 1DI500A-030 2DI50D-100 2DI75S-050A 1DI200D-100 1DI200D100 1di500a EVK75-050 EVG31-050 EVM31-050A PDF