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    M29F400B Price and Stock

    Micron Technology Inc M29F400BB55M1

    IC FLASH 4MBIT PARALLEL 44SO
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    Micron Technology Inc M29F400BT70M1

    IC FLASH 4MBIT PARALLEL 44SO
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    Micron Technology Inc M29F400BT90N1

    IC FLASH 4MBIT PARALLEL 48TSOP
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    Micron Technology Inc M29F400BB90M1

    IC FLASH 4MBIT PARALLEL 44SO
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    Micron Technology Inc M29F400BT55N1

    IC FLASH 4MBIT PARALLEL 48TSOP
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    M29F400B Datasheets (255)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M29F400B STMicroelectronics 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash Memory Original PDF
    M29F400B STMicroelectronics NOT FOR NEW DESIGN - 4 MBIT (512KB X8 OR 256KB X1 Original PDF
    M29F400B-120M1R STMicroelectronics 4 Mbit (512Kb x8, Boot Block) Single Supply Flash Memory Original PDF
    M29F400B-120M1R STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Original PDF
    M29F400B-120M1TR STMicroelectronics 4 MBit (512 kBit x 8 or 256 kBit x 16, Boot Block) Single Supply Flash Memory Original PDF
    M29F400B-120M1TR STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Original PDF
    M29F400B-120M3R STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Original PDF
    M29F400B-120M3R STMicroelectronics 4 Mbit (512Kb x8, Boot Block) Single Supply Flash Memory Original PDF
    M29F400B-120M3TR STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Original PDF
    M29F400B-120M3TR STMicroelectronics 4 MBit (512 kBit x 8 or 256 kBit x 16, Boot Block) Single Supply Flash Memory Original PDF
    M29F400B-120M6R STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Original PDF
    M29F400B-120M6R STMicroelectronics 4 Mbit (512Kb x8, Boot Block) Single Supply Flash Memory Original PDF
    M29F400B-120M6TR STMicroelectronics 4 MBit (512 kBit x 8 or 256 kBit x 16, Boot Block) Single Supply Flash Memory Original PDF
    M29F400B-120M6TR STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Original PDF
    M29F400B-120N1R STMicroelectronics 4 MBit (512 kBit x 8 or 256 kBit x 16, Boot Block) Single Supply Flash Memory Original PDF
    M29F400B-120N1R STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Original PDF
    M29F400B-120N1TR STMicroelectronics 4 MBit (512 kBit x 8 or 256 kBit x 16, Boot Block) Single Supply Flash Memory Original PDF
    M29F400B-120N1TR STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Original PDF
    M29F400B-120N3R STMicroelectronics 4 MBit (512 kBit x 8 or 256 kBit x 16, Boot Block) Single Supply Flash Memory Original PDF
    M29F400B-120N3R STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Original PDF
    ...

    M29F400B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JESD97

    Abstract: M29F400 M29F400B M29F400BB M29F400BT
    Text: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical


    Original     		PDF M29F400BT M29F400BB 512Kb 256Kb JESD97 M29F400 M29F400B M29F400BB M29F400BT

    M29F400

    Abstract: M29F400B M29F400T
    Text: M29F400T M29F400B 4 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or Word-by-Word


    Original     		PDF M29F400T M29F400B x8/x16, M29F400 M29F400B M29F400T

    JESD97

    Abstract: M29F400 M29F400B M29F400BB M29F400BT K 1603 24v
    Text: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Features • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical ■ 11 memory blocks


    Original     		PDF M29F400BT M29F400BB 512Kb 256Kb JESD97 M29F400 M29F400B M29F400BB M29F400BT K 1603 24v

    M29F400

    Abstract: M29F400B M29F400T
    Text: M29F400T M29F400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)


    Original     		PDF M29F400T M29F400B 512Kb 256Kb M29F400 M29F400B M29F400T

    Untitled

    Abstract: No abstract text available
    Text: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5V±10% supply voltage for program, erase and read operations ■ Access time: 45ns ■ Programming time – 8µs per Byte/Word typical ■


    Original     		PDF M29F400BT M29F400BB 512Kb 256Kb 10erein

    Untitled

    Abstract: No abstract text available
    Text: M29F400T M29F400B SINGLE SUPPLY 4 Megabit x8/x16, Block Erase FLASH MEMORY PRODUCT PREVIEW DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte/16µs by Word


    Original     		PDF M29F400T M29F400B x8/x16, Byte/16

    TSOP48 Package

    Abstract: No abstract text available
    Text: M29F400T M29F400B SINGLE SUPPLY 4 Megabit x8/x16, Block Erase FLASH MEMORY DATA BRIEFING DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte / 16µs by Word


    Original     		PDF M29F400T M29F400B x8/x16, TSOP48 M29F400T, M29F400T 120ns 150ns TSOP48 Package

    M29F400BC

    Abstract: No abstract text available
    Text: M29F400T M29F400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory NOT FOR NEW DESIGN M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns


    Original     		PDF M29F400T M29F400B 512Kb 256Kb M29F400B M29F400BT M29F400BB M29F400BC

    Untitled

    Abstract: No abstract text available
    Text: M29F400T M29F400B SINGLE SUPPLY 4 Megabit x8/x16, Block Erase FLASH MEMORY PRODUCT PREVIEW DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte / 16µs by Word


    Original     		PDF M29F400T M29F400B x8/x16,

    M29F400B

    Abstract: M29W400B QRFL0006
    Text: QRFL0006 QUALIFICATION REPORT M29F400B, M29W400B T6X-U35: 4 Mbit x8/x16 Single Supply Flash Memory INTRODUCTION The M29F400B and M29W400B are 4 Mbit Single Supply (respectively 5V and 3V) Flash memory products with Boot Block partitioning and organized as 512 KByte of 8 bits each or 256 Kword of 16 bits each.


    Original     		PDF QRFL0006 M29F400B, M29W400B T6X-U35: x8/x16) M29F400B T6X-U35 QRFL0006

    M29F400

    Abstract: M29F400B M29F400T
    Text: M29F400T M29F400B 4 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)


    Original     		PDF M29F400T M29F400B x8/x16, M29F400T, 120ns TSOP48 M29F400 M29F400B M29F400T

    M29F400BB

    Abstract: M29F400BT sequential timer using 555
    Text: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■


    Original     		PDF M29F400BT M29F400BB 512Kb 256Kb TSOP48 M29F400BB M29F400BT sequential timer using 555

    M29F400

    Abstract: M29F400B M29F400T
    Text: M29F400T M29F400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)


    Original     		PDF M29F400T M29F400B 512Kb 256Kb M29F400 M29F400B M29F400T

    M29F400

    Abstract: M29F400B M29F400BB M29F400BT M29F400T
    Text: M29F400T M29F400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory NOT FOR NEW DESIGN M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns


    Original     		PDF M29F400T M29F400B 512Kb 256Kb M29F400T M29F400B M29F400BT M29F400BB M29F400 M29F400BB

    M29F400BB

    Abstract: M29F400BT m29F
    Text: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■


    Original     		PDF M29F400BT M29F400BB 512Kb 256Kb TSOP48 M29F400BB M29F400BT m29F

    C1166

    Abstract: oxford did AN1166 AN1185 M29F400 M29F400B M29F400BB M29F400BT M29W400 M29W400B
    Text: AN1166 APPLICATION NOTE Software Drivers for the M29F400B and M29W400B Flash Memories CONTENTS • INTRODUCTION ■ THE M29F400B PROGRAMMING MODEL ■ WRITING C CODE FOR THE M29F400B ■ C LIBRARY FUNCTIONS PROVIDED ■ PORTING THE DRIVERS TO THE TARGET SYSTEM


    Original     		PDF AN1166 M29F400B M29W400B M29F400B M29W400B, C1166 oxford did AN1166 AN1185 M29F400 M29F400BB M29F400BT M29W400

    M29F400

    Abstract: M29F400B M29F400BB M29F400BT M29F400T
    Text: M29F400T M29F400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory NOT FOR NEW DESIGN M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns


    Original     		PDF M29F400T M29F400B 512Kb 256Kb M29F400T M29F400B M29F400BT M29F400BB M29F400 M29F400BB

    Untitled

    Abstract: No abstract text available
    Text: M29F400T M29F400B 4 Mbit x8/x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)


    OCR Scan     		PDF M29F400T M29F400B x8/x16, 10jas M29F400T,

    29F400BB

    Abstract: 29F400BT M29F400BT
    Text: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V+10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME - 8|is per Byte/Word typical ■ 11 MEMORY BLOCKS


    OCR Scan     		PDF M29F400BT M29F400BB 512Kb 256Kb TSOP48 M29F400BT, 29F400BB 29F400BT

    Untitled

    Abstract: No abstract text available
    Text: M29F400T M29F400B SGS-THOMSON IIIIMJì ILIì M W IIÈÌ 4 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|js by Byte / 1 6jas by Word typical


    OCR Scan     		PDF M29F400T M29F400B x8/x16, TSOP48 M29F400T,

    sgs m29f400b

    Abstract: M29F400 M29F400B M29F400T
    Text: W , S G S -T H O M S O N k7# . M29F400T M29F400B 4 Mb x8/x16, Block Erase SING LE SUPPLY FLASH M EM O RY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10|us by Byte / 1 6|as by W ord typical


    OCR Scan     		PDF M29F400T M29F400B x8/x16, sgs m29f400b M29F400 M29F400B M29F400T

    29f400b

    Abstract: No abstract text available
    Text: M29F400T M29F400B SGS-THOMSON 4 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA 5V±10% SUPPLYVO LTAG Efor PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME - 10p,s by Byte / 1 6p.s by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)


    OCR Scan     		PDF M29F400T M29F400B x8/x16, 29f400b

    A13D

    Abstract: No abstract text available
    Text: M29F400T M29F400B Æ T S G S -T H O M S O N * l i . IM M i[ L Ë (g W i[] S 4 Mb (x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME


    OCR Scan     		PDF M29F400T M29F400B x8/x16, TSOP48 AI01977 M29F400T, 29F400T 120ns A13D

    DG7-132

    Abstract: 2BT-5 ci237 ha
    Text: M29F400T M29F400B RiflD ®[i[Ui©iiMRflD©i SINGLE SUPPLY 4 Megabit x8/x16, Block Erase FLASH MEMORY SGS-THOMSON PRODUCT PREVIEW • DUAL x8 and x16 ORGANISATION ■ FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME


    OCR Scan     		PDF M29F400T M29F400B x8/x16, Byte/16ns M29F400T, M29F400B 007132b DG7-132 2BT-5 ci237 ha