10E-12
Abstract: Stratos Stratos Lightwave
Text: M2R-25-4-X-T Optical Gigabit Ethernet - +5V Dual Small Form Factor SFF Receivers - 1.25GBaud PR EL IM IN AR Y Features n 1.25 Gbps Gigabit Ethernet Performance n TTL Signal Detect Output n Low profile fits Mezzanine Card Applications n Single +5V Power Supply
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M2R-25-4-X-T
25GBaud
M2R-25-4
M2R-25-4
10E-12
Stratos
Stratos Lightwave
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PDF
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Untitled
Abstract: No abstract text available
Text: M2R-25-4-X-T Optical Gigabit Ethernet Dual Small Form Factor SFF Receivers - 1.25GBaud PR EL IM IN AR Y Features n 1.25 Gbps Gigabit Ethernet Performance n TTL Signal Detect Output n Low profile fits Mezzanine Card Applications n Single +5V Power Supply
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M2R-25-4-X-T
25GBaud
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PDF
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M2R DIODE
Abstract: diode m2r
Text: M2R-25-4-X-TL Optical Gigabit Ethernet - +3.3V Dual Small Form Factor SFF Receivers - 1.25GBaud PR EL IM IN AR Y Features n 1.25 Gbps Gigabit Ethernet Performance n TTL Signal Detect Output n Low profile fits Mezzanine Card Applications n Single +3.3V Power Supply
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Original
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M2R-25-4-X-TL
25GBaud
M2R DIODE
diode m2r
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PDF
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Stratos
Abstract: Stratos Lightwave
Text: M2R-25-4-X-TL Optical Gigabit Ethernet - +3.3V Dual Small Form Factor SFF Receivers - 1.25GBaud PR EL IM IN AR Y Features n 1.25 Gbps Gigabit Ethernet Performance n TTL Signal Detect Output n Low profile fits Mezzanine Card Applications n Single +3.3V Power Supply
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Original
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M2R-25-4-X-TL
25GBaud
M2R-25-4
M2R-25-4
Stratos
Stratos Lightwave
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PDF
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SMPTE-292
Abstract: Stratos SMPTE-293 Semikron skb b /0627 a 4 Stratos Lightwave IEC-825-1 IEEE-1394B M2R-25-9-2-TL M2R DIODE 103001
Text: M2R-25-9-X-TL Multi-Protocol Video - 1.5GBaud Optical Small Form Factor SFF Receivers - 3.3V PR EL IM IN AR Y Features n 1.5 Gbps SMPTE-293 Performance n TTL Signal Detect Output n Low profile fits Mezzanine Card Applications n 75Ω AC coupled LVPECL level Outputs
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Original
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M2R-25-9-X-TL
SMPTE-293
M2R-25-9
SMPTE-292
Stratos
Semikron skb b /0627 a 4
Stratos Lightwave
IEC-825-1
IEEE-1394B
M2R-25-9-2-TL
M2R DIODE
103001
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PDF
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Double high-speed switching diode
Abstract: MA3S781E diode m2r
Text: Schottky Barrier Diodes SBD MA3S781E Silicon epitaxial planar type (cathode common) Unit : mm 1.60 − 0.03 0.80 0.80 0.51 0.51 • Features 1 + 0.05 • SS-mini type 3-pin package • Allowing high-density mounting • Cathode common type 0.28 ± 0.05 1.60 ± 0.1
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MA3S781E
Double high-speed switching diode
MA3S781E
diode m2r
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Diode Marking WA
Abstract: M2P diode M2R DIODE MA704WA
Text: MA111 Schottky Barrier Diodes SBD MA704WA, MA704WK Silicon epitaxial planer type Unit : mm +0.2 For switching For wave detection circuit 2.8 –0.3 +0.25 1.5 –0.05 Low forward rise voltage VF and satisfactory wave detection effi- 1.45 3 +0.1 ● 1 0.4 –0.05
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MA111
MA704WA,
MA704WK
MA704A
Diode Marking WA
M2P diode
M2R DIODE
MA704WA
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PDF
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M2P diode
Abstract: marking m2p M2R DIODE MINI 3PIN MA3X704D MA3X704E
Text: Schottky Barrier Diodes SBD MA3X704D, MA3X704E Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 Rating Unit Reverse voltage (DC) MA3X704D/E VR 30 V Peak forward current Single IFM 150 mA Forward current (DC) Single + 0.1 0.16 − 0.06
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MA3X704D,
MA3X704E
MA3X704D/E
MA3X704D
O-236
SC-59
Markin02
M2P diode
marking m2p
M2R DIODE
MINI 3PIN
MA3X704E
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PDF
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MA3J741D
Abstract: MA3J741E A1033 M2P diode
Text: Schottky Barrier Diodes SBD MA3J741D, MA3J741E Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 0.425 • Two MA3J741s are contained in one package (S-mini type 3-pin) • Low forward rise voltage (VF) and satisfactory wave detection
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MA3J741D,
MA3J741E
MA3J741s
MA3J741D
MA3J741E
A1033
M2P diode
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PDF
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marking m2p
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3J741D, MA3J741E (MA741WA, MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 • Two MA3J741 (MA741) is contained in one package • Low forward voltage VF and good wave detection efficiency η
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Original
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MA3J741D,
MA3J741E
MA741WA,
MA741WK)
MA3J741
MA741)
marking m2p
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PDF
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marking M2P diode
Abstract: M2P diode diode m2r M2R DIODE MA741WK
Text: MA111 Schottky Barrier Diodes SBD MA741WA, MA741WK Silicon epitaxial planer type Unit : mm For the switching circuit 2.1±0.1 Two elements are incorporated in MA741 (S-Mini type 3 pins) ● Low forward rise voltage VF and satisfactory wave detection efficiency
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MA111
MA741WA,
MA741WK
marking M2P diode
M2P diode
diode m2r
M2R DIODE
MA741WK
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X704D, MA3X704E (MA704WA, MA704WK) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit Reverse voltage (DC) VR 30 V Peak reverse voltage IFM 150 mA Single Double *
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Original
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MA3X704D,
MA3X704E
MA704WA,
MA704WK)
MA3X704A
MA704A)
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3S781D, MA3S781E (MA781WA, MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3° (0.44) 1 2 1.60±0.05 • Two MA3S781 (MA781) is contained in one package • High-density mounting is possible
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Original
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MA3S781D,
MA3S781E
MA781WA,
MA781WK)
MA3S781
MA781)
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3J741 (MA741) is contained in one package
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2002/95/EC)
MA3J741D
MA741WA)
MA3J741E
MA741WK)
MA3J741
MA741)
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3J741 (MA741) is contained in one package
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2002/95/EC)
MA3J741D
MA741WA)
MA3J741E
MA741WK)
MA3J741
MA741)
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PDF
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MA3X704A
Abstract: MA3X704D MA3X704E MA704A MA704WA MA704WK
Text: Schottky Barrier Diodes SBD MA3X704D (MA704WA), MA3X704E (MA704WK) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For switching For wave detection 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 1.1+0.2 –0.1 0 to 0.1 Symbol Rating
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MA3X704D
MA704WA)
MA3X704E
MA704WK)
SC-59
MA3X704D
MA3X704D:
MA3X704E:
MA3X704A
MA3X704E
MA704A
MA704WA
MA704WK
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741DG, MA3J741EG Silicon epitaxial planar type For high speed switching For wave detection • Package • Code SMini3-F2 • Pin Name MA3J741DG 1: Cathode 1 2: Cathode 2
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2002/95/EC)
MA3J741DG,
MA3J741EG
MA3J7410G
MA3J741DG
MA3J741EG
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PDF
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MA3J741
Abstract: MA3J741D MA3J741E MA741 MA741WA MA741WK ir 0425
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 5˚
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Original
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2002/95/EC)
MA3J741D
MA741WA)
MA3J741E
MA741WK)
MA3J741
MA741)
MA3J741
MA3J741D
MA3J741E
MA741
MA741WA
MA741WK
ir 0425
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PDF
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MA3X704D
Abstract: MA3X704E MA704WA MA704WK panasonic ma diodes sc-59 Marking marking m2p panasonic "rs 466"
Text: Schottky Barrier Diodes SBD MA3X704D , MA3X704E (MA704WA,MA704WK) Silicon epitaxial planar type + 0.25 Parameter Symbol Rating Unit Reverse voltage (DC) MA3X704D/E VR 30 V IFM 150 mA Forward current (DC) Single 30 Junction temperature Tj 125 °C Storage temperature
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MA3X704D
MA3X704E
MA704WA
MA704WK)
MA3X704D/E
MA3X704D
O-236
SC-59
MA3X704E
MA704WK
panasonic ma diodes sc-59 Marking
marking m2p
panasonic "rs 466"
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PDF
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ma741
Abstract: marking m2p MA3J741 MA3J741D MA3J741E MA741WA MA741WK
Text: Schottky Barrier Diodes SBD MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3J741 (MA741) is contained in one package • Low forward voltage VF and good wave detection efficiency η
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Original
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MA3J741D
MA741WA)
MA3J741E
MA741WK)
MA3J741
MA741)
ma741
marking m2p
MA3J741
MA3J741D
MA3J741E
MA741WA
MA741WK
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781D (MA781WA), MA3S781E (MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05
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Original
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2002/95/EC)
MA3S781D
MA781WA)
MA3S781E
MA781WK)
MA3S781
MA781)
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PDF
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M2P diode
Abstract: marking m2p MA3J741 MA3J741D MA3J741E MA741 MA741WA MA741WK
Text: Schottky Barrier Diodes SBD MA3J741D, MA3J741E (MA741WA, MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Two MA3J741 (MA741) is contained in one package • Low forward voltage VF and good wave detection efficiency η
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Original
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MA3J741D,
MA3J741E
MA741WA,
MA741WK)
MA3J741
MA741)
M2P diode
marking m2p
MA3J741
MA3J741D
MA3J741E
MA741
MA741WA
MA741WK
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PDF
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MA3X704A
Abstract: MA3X704D MA3X704E MA704A MA704WA MA704WK V10330
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704D (MA704WA), MA3X704E (MA704WK) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For switching For wave detection 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1
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Original
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2002/95/EC)
MA3X704D
MA704WA)
MA3X704E
MA704WK)
SC-59
MA3X704D
MA3X704A
MA3X704E
MA704A
MA704WA
MA704WK
V10330
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781DG, MA3S781EG Silicon epitaxial planar type For high speed switching For wave detection • Package • Code SSMini3-F3 • Pin Name MA3S781DG 1: Cathode 1
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Original
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2002/95/EC)
MA3S781DG,
MA3S781EG
MA3S7810G
MA3S781DG
MA3S781EG
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PDF
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