Untitled
Abstract: No abstract text available
Text: HM51W17800 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-664C Z Rev. 3.0 Feb. 24,1997 Description The Hitachi HM51W17800 is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17800 offers Fast
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HM51W17800
152-word
ADE-203-664C
28-pin
ns/60
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M514400a
Abstract: M514400 L06lC ZP-20S
Text: blE H M D • 44TL5D3 GD22774 SOñ 5 1 4 4 0 0 A / A L / A S L S e r i e s — 1,048,576-word X4-bit Dynamic RAM HITACHI/ The Hitachi HM514400A/AL/ASL is a CMOS dynamic RAM organized 1,048,576-word x 4-bit. HM514400A/AL/ASL has realized higher density, higher perform ance and various functions by
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44TL5G3
GD22774
HM514400A/AL/ASL
576-word
20-pin
M514400a
M514400
L06lC
ZP-20S
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Untitled
Abstract: No abstract text available
Text: HM5164800A Series HM5165800A Series 8388608-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-595 Z Preliminary Rev. 0.0 Jun. 3, 1996 Description The Hitachi HM5164800A Series, HM5165800A Series are CMOS dynamic RAMs organized as 8,388,608-word x 8-bit. They employ the most advanced CMOS technology for high performance and
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HM5164800A
HM5165800A
8388608-word
ADE-203-595
608-word
400-mil
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GD25D
Abstract: HM62W256LFP-8SLT HM62W256
Text: i HM 62W 256 S e rie s - 3.0 V & 3.3 V Supply 32,768-Word x 8-Bit Low Voltage Operation CMOS Static RAM Features Pin Description • Low voltage operation SRAM Single 3.3 V Supply • 0.8 jxm Hi-CMOS process • Highspeed Access time: 70/85 ns max
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HM62W256
768-Word
A0-A14
HM62W256LFP-7T
HM62W256LFP-8T
HM62W256LFP-7SLT
HM62W256LFP-8SLT
28-pin
FP-28DA)
0GES033
GD25D
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Untitled
Abstract: No abstract text available
Text: HB56AW873E Series 8,388,608-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-685A Z Rev. 1.0 Nov. 28, 1996 Description The HB56AW873E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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HB56AW873E
608-word
72-bit
168-pin
ADE-203-685A
64-Mbit
HM5165800ATT)
16-bit
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Untitled
Abstract: No abstract text available
Text: HM514800C/CL Series HM51S4800C/CL Series 524,288-word x 8-bit Dynamic Random Access Memory H I T A The H itachi H M 514800C are CM OS dynam ic R A M o rg a n iz e d as 5 2 4 ,2 8 8 -w o rd x 8 -b it. HM514800C have realized higher density, higher performance and various functions by employing
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HM514800C/CL
HM51S4800C/CL
288-word
514800C
HM514800C
400-mil
28-pin
400-mil
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Untitled
Abstract: No abstract text available
Text: HM62832H Series 32768-Word x 8-Bit High Speed CMOS Static RAM Features Pin Arrangement • High speed: Fast access time 25/35/45 ns m ax • Low power A ctive: 300 mW (typ) Standby: IO j i W (typ) (L-version) • Single 5 V supply • Completely static memory
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HM62832H
32768-Word
002403b
M4Tb203
0024fl3fl
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Untitled
Abstract: No abstract text available
Text: HM5216326 Serie 16M LVTTL interface SGRAM 2-Mword x 32-bit 125 MHz/100 MHz/83 MHz HITACHI ADE-203-678B (Z) Preliminary, Rev. 0.3 Jan. 14,1998 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5216326 provides 2
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HM5216326
32-bit)
Hz/100
Hz/83
ADE-203-678B
FP-100H
TFP-100H
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Untitled
Abstract: No abstract text available
Text: HM67S18258 Series Target Spec. 262,144-words x 18-bits Synchronous Fast Static RAM HITACHI ADE-203-661(Z) Product Preview Rev. 0 Oct. 1,1996 Features • 3.3 ± 0.1 V Operation • LVCMOS Compatible Input and Output • Synchronous Operation • Internal self-timed Late Write
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HM67S18258
144-words
18-bits
ADE-203-661
HM67S18258BP-7H
BP-119)
4H1b203
Q032575
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Untitled
Abstract: No abstract text available
Text: HITACHI/ HD74HC651 HD74HC652 LOGIC/ARRAYS/MEM T E D Ë 1 > 92D MMTbSOJ DGlDSbS 10565 • Octal Bus Transceivers/Registers with inverted 3-state o u tpu ts)-# Octal Bus Transceivers/Registers (with 3-state outputs) This device consists of bus transceiver circuits, D-type flip-
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HD74HC651
HD74HC652
0D1D315
T-90-20
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HM51W4260A
Abstract: HM51W4260ATT hm51w4260altt7
Text: HM51W4260A/AL Series Preliminary 262,144-word X 16-bit Dynam ic Random Access Memory T h e H ita c h i H M 5 1W 4 2 6 0 A /A L a re C M O S dynamic RAM organized as 262,144-word x 16b it. H M 5 1 W 4 2 6 0 A /A L hav e re a liz e d h ig h e r density, higher performance and various functions
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HM51W4260A/AL
144-word
16-bit
16bit.
400-mil
HM51W4260A
HM51W4260ATT
hm51w4260altt7
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