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    M551 TRANSISTOR Search Results

    M551 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    M551 TRANSISTOR

    Abstract: No abstract text available
    Text: H0A1180 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • High sensitivity • Wide operating temperature range -55°C to +100°C • 12.0 in.(305 mm) min. 28 AWG PVC insulated wire leads INFRA-24.TIF DESCRIPTION The HOA1180 series consists of an infrared emitting


    OCR Scan     		PDF H0A1180 INFRA-24 HOA1180 HOA1180-001, HOA1180-003) SE1450, SD1440, SD1410. M551 TRANSISTOR