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    M58LT256GT1ZA

    Abstract: M58LT256G M58LT256GT m58lr256 CR10
    Text: M58LT256GT M58LT256GB 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory Features summary • ■ Supply voltage – VDD = 1.7V to 2.0V for Program, Erase and Read – VDDQ = 2.7V to 3.6V for I/O buffers – VPP = 9V for fast program


    Original     		M58LT256GT M58LT256GB 52MHz 110ns TBGA64 M58LT256GT1ZA M58LT256G M58LT256GT m58lr256 CR10 PDF