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    M6 SOT23 Search Results

    M6 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    M6 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fairchild marking codes sot-23

    Abstract: marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component KST5088
    Text: KST812M3/M4/M5/M6/M7 KST812M3/M4/M5/M6/M7 General Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -50


    Original     		PDF KST812M3/M4/M5/M6/M7 OT-23 KST5088 fairchild marking codes sot-23 marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component

    BSS66

    Abstract: SOT23 M7 BSS66R BSS67 100khz 5v transistor npn transistor m6 npn BSS67R medium power switching transistors DSA003680
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS BSS66 BSS67 ISSUE 2 – SEPTEMBER 1995 ✪ PARTMARKING DETAILS — BSS66 BSS67 BSS66R BSS67R - M6 M7 M8 M9 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60


    Original     		PDF BSS66 BSS67 BSS66 BSS67 BSS66R BSS67R 100mA* SOT23 M7 100khz 5v transistor npn transistor m6 npn medium power switching transistors DSA003680

    S9015

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9015 OT-23 S9014 -100mA, -10mA 30MHz S9015

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9015 OT-23 S9014 -100mA, -10mA 30MHz

    S9015 SOT-23

    Abstract: m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9015 OT-23 S9014 -100A, -100mA, -10mA S9015 SOT-23 m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015

    m6 marking transistor sot-23

    Abstract: sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6
    Text: S9015 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to S9014 MARKING: M6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF S9015 OT-23 OT-23 S9014 -100A, -100mA, -10mA m6 marking transistor sot-23 sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6

    BSR58

    Abstract: No abstract text available
    Text: BSR58 BSR58 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M6 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF BSR58 OT-23 BSR58

    MARK M6

    Abstract: BSR58
    Text: BSR58 BSR58 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M6 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF BSR58 OT-23 MARK M6 BSR58

    KST812M6 transistor

    Abstract: KST812M6
    Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit -50 -40 -5 -100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF KST812M3/M4/M5/M6/M7 KST5088 OT-23 KST812M3 KST812M4 KST812M5 KST812M6 KST812M7 KST812M6 transistor KST812M6

    Untitled

    Abstract: No abstract text available
    Text: S9015 PNP 3 1 2 SOT-23 V CEO Value -45 -50 -5 -100 200 1.6 625 S9015=M6 -45 -0.1 -40 -100 -5.0 -100 E=-45Vdc, I E= 0 -50 -5.0 WEITRON http://www.weitron.com.tw O -0.1 u -0.1 u -0.1 u S9015 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF S9015 OT-23 S9015 -45Vdc, -10mAdc) -100uA -50uA

    S9015LT1

    Abstract: S9015 S9015M
    Text: S9015LT1 PNP 3 1 2 SOT-23 V CEO Value -45 -50 -5 -100 200 1.6 625 S9015=M6 -45 -0.1 -40 -100 -5.0 -100 E=-45Vdc, I E= 0 -50 -5.0 WEITRON http://www.weitron.com.tw O -0.1 u -0.1 u -0.1 u S9015LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF S9015LT1 OT-23 S9015 -45Vdc, -10mAdc) -100uA -50uA S9015LT1 S9015M

    Untitled

    Abstract: No abstract text available
    Text: S9015 PNP 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO Value -45 -50 -5 -100 200 1.6 625 S9015=M6 -45 -0.1 -40 -100 -5.0 -100 E=-45Vdc, I E= 0 ) -50 -5.0 WEITRON http://www.weitron.com.tw O -0.1 u -0.1 u -0.1 u S9015 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF S9015 OT-23 S9015 -45Vdc, -10mAdc) -100uA -50uA

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 OT-23

    2SA812

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 OT-23 2SA812

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 OT-23

    qqmz

    Abstract: marking k501 tssop14 st automotive
    Text: TS861, TS862, TS864 Rail-to-rail micropower BiCMOS comparators Datasheet − production data Features • SOT23-5 Ultra low current consumption 6 µA/comp. at VCC = 2.7 V ■ Rail-to-rail CMOS inputs ■ Push-pull outputs ■ Supply operation from 2.7 to 10 V


    Original     		PDF TS861, TS862, TS864 OT23-5 SO-14 TSSOP14 qqmz marking k501 tssop14 st automotive

    max14574

    Abstract: MAX1786 MAX1788 MAX8899 DS1849 MAX16908 MAX4967 DS3610 max17018 max13487
    Text: Monitor Reports by Product: 1. Find the product of interest in the table below. Note the process and/or package for that product. 2. Use the "Back" button to return to the home page. 3. Select the process in the "Process Reliability" for the product of interest.


    Original     		PDF

    OPTOCOUPLER 4-PIN

    Abstract: 1N4148 sod123 SMD7343 zener 8w PWM DRIVE control 100V 20A SMD-7343 1n4148 any 1N4148 SOD323 pwm lm2904 HV9608DB1
    Text: HV9608DB1 3.3V/20A DC/DC Converter for Telecom Systems Introduction The Supertex HV9608 PWM controller contains all the features and flexibility needed to implement current-mode control for DC/DC converters, which is demonstrated in a high efficiency, open-frame, low,


    Original     		PDF HV9608DB1 V/20A HV9608 HV9608DB1) HV9608DB1 75VDC A091004 OPTOCOUPLER 4-PIN 1N4148 sod123 SMD7343 zener 8w PWM DRIVE control 100V 20A SMD-7343 1n4148 any 1N4148 SOD323 pwm lm2904

    m6 marking transistor sot-23

    Abstract: transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812
    Text: 2SA812 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF 2SA812 OT-23 OT-23 2SC1623 -100A, -100mA, -10mA -10mA m6 marking transistor sot-23 transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812

    m6 marking transistor sot-23

    Abstract: 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER


    Original     		PDF OT-23 2SA812 OT-23 2SC1623 -100A, -100mA, -10mA m6 marking transistor sot-23 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23

    1D-S marking

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF KST812M3/M4/M5/M6/M7 OT-23 KST5088 KST812M3 KST812M4 KST812M5 KST812M6 KST812M7 1D-S marking

    Untitled

    Abstract: No abstract text available
    Text: BSS66 BSS67 SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS PARTMARKING DETAILS BSS66 - M6 BSS67 - M7 BSS66R- M8 BSS67R - M9 ABSOLUTE MAXIMUM RATINGS VALUE UNIT V CBO 60 V V CEO 40 V V ebo !cm 6 V 200 mA Continuous Collector Current !c 100 mA Base Current


    OCR Scan     		PDF BSS66 BSS67 BSS66 BSS67 BSS66R- BSS67R 7D57fl DS110

    BSS67

    Abstract: No abstract text available
    Text: BSS66 SOT23 NPN SILICON PLANAR M E D IU M POW ER SW ITCHING T R A N SIST O R S ISSUE 2 - SEPTEMBER 1995 Q PARTMARKING DETAILS — BSS66 BSS67 - RQQ«7 M6 M7 BSS66R- M8 BSS67R- M9 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE


    OCR Scan     		PDF BSS66 BSS67 BSS66 BSS66R- BSS67R- Emitter100m BSS67 100kHz

    MMBA812M5

    Abstract: marking M3 MMBA812M4 MMBA812M3 MMBA812M6
    Text: 34 MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC DE | b 3 b 7 E S S 003Ô27S a CDIO D E S /O PTO 3 ^C SOT23 continued) 38275 D T - z *- /* MMBA812M3,4,5,6,7 DEVICENO. SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C j • Designed for general-purpose and audio-frequency amplifier


    OCR Scan     		PDF MMBA812M3 MMBA812M4 MMBA812M5 MMBA812M6 MMBA812M7 marking M3