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    M65 IC Search Results

    M65 IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
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    M65 IC Price and Stock

    Microchip Technology Inc MIC33M656-FAYMP-TR

    Switching Voltage Regulators High Performance 5.5V/6A, I2C Configurable Integrated Power Module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MIC33M656-FAYMP-TR 270
    • 1 $5.34
    • 10 $5.34
    • 100 $4.45
    • 1000 $4.32
    • 10000 $4.32
    Buy Now

    Microchip Technology Inc MIC33M656-SAYMP-TR

    Switching Voltage Regulators High Performance 5.5V/6A, I2C Configurable Integrated Power Module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MIC33M656-SAYMP-TR 213
    • 1 $5.34
    • 10 $5.34
    • 100 $4.32
    • 1000 $4.32
    • 10000 $4.32
    Buy Now

    Microchip Technology Inc MIC33M650YMP-TR

    Switching Voltage Regulators High Performance 5.5V/6A, Pin Strappable Integrated Power Module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MIC33M650YMP-TR
    • 1 $4.97
    • 10 $4.97
    • 100 $4.14
    • 1000 $4.02
    • 10000 $4.02
    Get Quote

    Microchip Technology Inc MIC33M656-HAYMP-TR

    Switching Voltage Regulators High Performance 5.5V/6A, I2C Configurable Integrated Power Module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MIC33M656-HAYMP-TR
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $4.32
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    M65 IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    42EF-P2MPB-F4

    Abstract: 42GRU-9202-QD 42EF-P2MPB-A2 42EF-D1MNAK-a2 42EF-D1MPAK-F4 42EF-E1EZB-F4 42GRu-9203-QD 42GRU-9002-QD 42GRU-9001 42GRP-9002-QD
    Text: PHOTOSWITCHR Photoelectric Sensors and Programmable Controller Interface Manual 1771 PLCR I/O Part I Preferred Compatibility Ç 2 PLCR 1771 Inputs Important User Information The examples and diagrams in this manual are included solely for illustrative purposes. Because of the many variables and requirements associated with


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    IN4148

    Abstract: ELAN EM78M612 EM78M612 EPVP6200 gr17 DIP SWITCH 10 PIN IN4-148 1V111 GPIO90 GPIO61
    Text: ELAN Microelectronics Corp. Confidential ePVP VFD Controller SOLUTION ePVP Series Target Board User Manual V2.1 1. Apply to the development board of series IC number ALL ePVP Series IC ex. ePVP6300, ePVP6200 ,ePV6316, ePVP6810 USB I/F VFD Panel socket RS-232C


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    PDF ePVP6300, ePVP6200 ePV6316, ePVP6810 RS-232C 64pin 52pin GPIO97 GPIO96 GPIO95 IN4148 ELAN EM78M612 EM78M612 EPVP6200 gr17 DIP SWITCH 10 PIN IN4-148 1V111 GPIO90 GPIO61

    moeller DIL 3M

    Abstract: DILM150-XMV dilm80 PKZM4-63 PKZM04 Moeller dil 2m DILM15-10 moeller dil m17 PKZM0-25 PKZM0-32
    Text: : Efficient solutions for motor control The complete range of contactors, efficient motor-starters and variable speed drives for the motor circuit. New simple to install solutions based on clever communication. DIL contactors Product information DIL M motor contactors


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    ISO11359-2

    Abstract: PPS GF40 ISO527-1 ASTM d792 7340a 1140A6 pa 66 gf Polyphenylene sulfide OF-1008 PPS ISO179 IEC 60093
    Text: SENSORS & CONTROLS PRODUCTS June, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Model EN Optical Encoder Series Material Change Sensors and Controls Division will be changing the plastic material used in molding the LED trimming


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    PDF 1140L4 OF-1008 ISO11359-2 PPS GF40 ISO527-1 ASTM d792 7340a 1140A6 pa 66 gf Polyphenylene sulfide OF-1008 PPS ISO179 IEC 60093

    DILM15-01

    Abstract: DIL M50 moeller dil m17 moeller dil Moeller dil 2m moeller DIL 3M PKZM 1-10 PKZM4-50 MOELLER PKZM PKZM0-25
    Text: : Efficient solutions for motor control The complete range of contactors, efficient motor-starters and variable speed drives for the motor circuit. New simple to install solutions based on clever communication. DIL contactors Product information DIL M motor contactors


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    ISO11359-2

    Abstract: 1140A1 ASTM d792 Polyphenylene sulfide OF-1008 PPS 1130a1 modulus Fortron 1140L4 1140A64 1140A6 1140L4
    Text: SENSORS & CONTROLS PRODUCTS June, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Model EN Optical Encoder Series Material Change Sensors and Controls Division will be changing the plastic material used in molding the LED trimming


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    PDF 1140L4 OF-1008 ISO11359-2 1140A1 ASTM d792 Polyphenylene sulfide OF-1008 PPS 1130a1 modulus Fortron 1140L4 1140A64 1140A6

    NEC 2501

    Abstract: TC-2178 resistor UJ marking
    Text: DATAEvaluation SHEET AdLib OCR IVEC ELECTRON DEVICE SILICON TRANSISTOR- GN1F4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 0 Resistor Built-in TYPE 2.1+0 .1 Maximum Voltages and Cur ents T, 25 OC


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    PDF TC-2178 1988M NEC 2501 TC-2178 resistor UJ marking

    0030F

    Abstract: W25Q32B AXH marking marking CODE S13 m6501 25q3 25q32
    Text: W25Q32BW 32M-BIT 1.8V SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: August 24, 2008 Preliminary - Revision A W25Q32BW Table of Contents 1. GENERAL DESCRIPTION . 5


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    PDF W25Q32BW 32M-BIT 208-MIL 0030F W25Q32B AXH marking marking CODE S13 m6501 25q3 25q32

    Untitled

    Abstract: No abstract text available
    Text: DW8.N0. CONFIGURATION .560- 2932-6021 ELECTRICAL: 50 Nominal Impedance Ohm« . DC TO 18.0 Frequency Range (Ghz) _ 335 Voltage Rating (Max.VRMS). 1.05*.005 X FGHz VSWR (Max.) .04 Insertion Loes (db Max.)_ 60 DB-FGHz RF Leakage (Min. dB down). RF High Potential (max.VRMS)._ 670 AT 5 MHa


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    PDF MIL-C-39012/SMA MD-107 MIL-C-14550, MIL-P-19468 L-P-403. F-11442 DATE2/14/89 I-STD-202. l-STD-202, MIl-STD-202.

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    Abstract: No abstract text available
    Text: ENG. FILE COPY CONF IGURAT ION DWG.NO. t o l e r a n c e «-/-.q o s u n l e s s o t h e r w i s e .s p e c i f i e d SF2903-6097 ELECTRICAL: 50 NOMINAL IMPEDANCE (OHMS) _ DC TO 18.0* FREQUENCY RANGE (GHZ)_ 335 * VOLTAGE RATING (MAX.VRMS) 1.07*.015 X FGHz


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    PDF SF2903-6097 MIL-C-39012/SMA MD-107 RECOMMENDED710 L-P-403, ZZ-R-765. F-11947 MIL-STD-202. MIL-STD-202

    H100I

    Abstract: marking IAY
    Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FN1F4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in TYPE o—W V 2.8 ± 0.2 Rl = 22 k£2 R1 0.65: g;|5 1.5 • Complementary to FA1 F4Z


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    PDF 1987M H100I marking IAY

    M65 IC

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE G N1F4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in TYPE Ri = 2 2 k S l O — VW R1 • Complementary to G A 1F4Z ABSOLUTE M A X IM U M R ATIN G S


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    PDF 22kSl 1988M M65 IC

    M65 IC

    Abstract: No abstract text available
    Text: DATA SHEET NEC / BKTRON DEVICE / SILICON TRANSISTOR / _ _ . _ _ G N 1F4Z M EDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FE A TU R E S • 9C Resistor Built-in T Y P E O —A A / V " R i - 22 k i i «I Ô E • Complementary to G A 1 F 4 Z


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    Untitled

    Abstract: No abstract text available
    Text: SILICO N TRANSISTOR FN 1F4Z M EDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR M IN I MOLD FE A TU R E S PACKAGE DIMENSIONS • in Resistor B u ilt-in TYPE B O—V v V Ri = 22 kSÌ «1 • C om plem entary to F A 1 F 4 Z A B S O LU T E M A X IM U M R A T IN G S


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    BUK437-600B

    Abstract: BUK437-600A BUK437 TNT sot
    Text: BUK437-600A BUK437-600B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode liekJ-eftect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    PDF BUK437-600A BUK437-600B BUK437 -600A -600B 00/nC M89-114imST BUK437-600B BUK437-600A TNT sot

    BB453

    Abstract: BF5458 D103D BF545A BF545B BF545C MSB003 UBB467 SFs SOT23 dk transistor
    Text: • P h i l i p bb53T31 002355^ 113 ■ APX p Product specification N-channel silicon junction field-effect transistor FEATURES N AriER b «>■£/« BF545Aî BF545Bî BF545C QUICK REFERENCE DATA • Low leakage level typ. 500 fA • High gain ±vDS • Low cut-off voltage (max. 2.2 V


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    PDF BF545Ai BF545B5 BF545C BF545A) BF545A BF545A BF545B MBB471 BB453 BF5458 D103D BF545C MSB003 UBB467 SFs SOT23 dk transistor

    MBB464

    Abstract: MBB081 BF545B TRANSISTOR BR BF545A BF545C MSB003 m67 transistor transistor 313 sot23 B3E MARKING SOT23-6
    Text: Philips Semiconductors bbS3T24 G072blG M57 N-channel silicon junction field-effect transistor • S I C 3 ^_^£oductspecif|catlon BF545A; BF545B; BF545C napc/philips s e m c o n j FE A T U R E S b3E T> Q UICK R E F E R E N C E DATA • Low leakage level typ. 500 fA


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    PDF bbS3T24 G072blG BF545A) BF545A; BF545B; BF545C BF545A BF545B MBB470 S31E4 MBB464 MBB081 BF545B TRANSISTOR BR BF545A BF545C MSB003 m67 transistor transistor 313 sot23 B3E MARKING SOT23-6

    Untitled

    Abstract: No abstract text available
    Text: WAY 1 0 JSJ3 VME 1210/1220 June 1990 Slot 1 and Non-Slot 1 VMEbus Master Controllers Distinctive Features_ • VME 1210 provides two device chip set for slot 1 master bus controller and single level arbiter • VME 1220 provides two device chip set for non-slot 1


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    PDF 1210/12duct 24-Lead 28-Pin DGD02S2 24-Pin 10TYP

    TC-6252

    Abstract: TC6252 WJ M64
    Text: - r S • — h * SEC i ï r / V C om po un d Transistor Î 7 GN1F4Z ^ 4f J i ^ I U O y< yf 7 l*3 Ü X Î É tf l £ R i = 2 2 L X ^ Î 1 ( - P - Ì Ì ! m m k Q ) B O O o G A 1F 4 Z 3 t > - 7° U / 9 > 'J T l È f f l T ' ë ì e t ( T a — 25 °C) m


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    PDF Cycled50 82cMS25Ã TC-6252 TC6252 WJ M64

    Untitled

    Abstract: No abstract text available
    Text: VME 1210/1220 A 3 L May 1989 Slot 1 and Non-Slot 1 VMEbus Master Controllers Distinctive Features_ • VME 1210 provides two device chip set for slot 1 master bus controller and single level arbiter Applications_


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    PDF pro15-17,

    imt 901 Q

    Abstract: imt 901
    Text: SYSTEM CLOCK CHIP IMISC417 INTL M I C R O C I R C U I T S INC HfiE » • May 1992 Preliminary Hösoma ooG GSia om « im t CMOS LSI PLL FREQUENCY SYNTHESIZER T PRODUCT FEA TURES - S O - 2 3 PRODUCT DESCRIPTION ■ Generates all Essential Clock Signals for the


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    PDF IMISC417 IMISC417APB IMISC417AXB IMISC417ACT IMISC417ACK imt 901 Q imt 901

    irf 3905

    Abstract: pj 0266 TC-6059 IRF 5350 TC-605 IRF 544 T108 transistor sms 2t lj11 irf 346
    Text: NEC i ï r i \ ^ — 5 f ♦ h Compound Transistor f x FN 1F4Z $ f t O ' M 7 x £i £ | * J / E L T v ^ î ë 1 - c 2 . 8 ± 0 .2 R i= 2 2 1.5 kQ 0 . 65 io.i 5 O F A 1 F 4 Z t =? > 7 ° ' ) S > - 9 ') T fê ( T a Il = 2 5 °C ) g 3 u ? j W& Æ ^ t& # \tL


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    Untitled

    Abstract: No abstract text available
    Text: VME 2000 VMEbus / z x _ ^ T • C Slave Module Interface Device December 1990 Distinctive Features_ Applications_ • • Provides logic, high current drive and buffers for slave module to VMEbus interface in 300 mil 24 pin DIP or 28


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    PDF 107YP VME3000 300mil

    1N5628

    Abstract: 12115X marking AB SOD123 1N5828
    Text: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N582S and 1N5828 are Motorola Preferred Devices Designer’s Data Sheet Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.


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    PDF 1N5826 1N5827 1N5828 1N582S 1N5828 DO-35 1N5628 12115X marking AB SOD123